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1. 发明申请

US20050213916A1 Method of manufacturing optical waveguide device 审中-公开
标题翻译：制造光波导器件的方法
公开(公告)号：US20050213916A1
公开(公告)日：2005-09-29
申请号：US11074898
申请日：2005-03-09
申请人： Chie Fukuda , Tetsuya Hattori , Morihiro Seki
发明人： Chie Fukuda , Tetsuya Hattori , Morihiro Seki
IPC分类号： G02B6/13 , G02B6/10 , G02B6/136
CPC分类号： G02B6/136
摘要： A method of manufacturing an optical waveguide device with low scattering loss is provided. This method comprises, in the following order, the steps of forming a groove by etching in a cladding member having a glass region including a first dopant that lowers the softening temperature of the glass region, heat treating the cladding member at a temperature that is higher than the lowered softening temperature, forming a core within the groove, and forming an overcladding layer composed of glass including a second dopant over the core and the cladding member. Alternatively, this method comprises the steps of forming a groove by etching in a cladding member having a glass region including one of elemental germanium, elemental phosphorus, and elemental boron, heat treating the cladding member after the formation of the groove, forming a core within the groove, and forming an overcladding layer over the core and the cladding member.
摘要翻译：提供一种制造具有低散射损耗的光波导器件的方法。该方法按照以下顺序包括通过蚀刻在具有降低玻璃区域的软化温度的第一掺杂剂的玻璃区域的包层部件中形成沟槽的步骤，在较高温度下对包层部件进行热处理比降低的软化温度，在槽内形成芯，并且在芯和包层构件上形成由包括第二掺杂剂的玻璃构成的外包层。或者，该方法包括以下步骤：在具有包括元素锗，元素磷和元素硼中的一种的玻璃区域的包层构件中通过蚀刻形成沟槽，在形成沟槽之后对包层构件进行热处理，形成芯并且在芯和包层构件上形成外包层。

2. 发明申请

US20050169592A1 Optical waveguide device, and method of manufacturing optical waveguide device 有权
标题翻译：光波导器件及其制造方法
公开(公告)号：US20050169592A1
公开(公告)日：2005-08-04
申请号：US11046859
申请日：2005-02-01
申请人： Chie Fukuda , Tetsuya Hattori
发明人： Chie Fukuda , Tetsuya Hattori
IPC分类号： G02B6/122 , G02B6/10 , G02B6/13 , G02B6/132 , G02B6/136
CPC分类号： G02B6/132 , G02B6/136
摘要： The present invention provides a glass optical waveguide device that comprises silica glass and is usable despite a relatively large refractive index difference between its core layer and cladding layer, and a method of manufacturing such device. This optical waveguide device includes a core layer on or over a substrate and a cladding layer that covers the core layer, wherein the core layer is made of silica glass containing an additive for raising the refractive index, and the relative refractive index difference of the core layer with respect to the cladding layer is at least 2.5%. The method of manufacturing this optical waveguide device includes the steps of placing a substrate over an electrode plate that is connected to a first high-frequency power supply within a vacuum vessel, introducing a raw material gas into the vacuum vessel and generating a plasma within the vacuum vessel with high-frequency power supplied from a second high-frequency power supply, and simultaneously forming an optical waveguide film over the substrate while supplying high-frequency power from the first high-frequency power supply to the electrode plate.
摘要翻译：本发明提供了一种玻璃光波导器件，其包括石英玻璃，并且尽管其芯层和包层之间的折射率差较大，但可以使用，以及制造该器件的方法。该光波导装置包括在基板上或基板上的芯层和覆盖芯层的包覆层，其中芯层由含有用于提高折射率的添加剂的石英玻璃制成，并且芯体的相对折射率差相对于包覆层的层为至少2.5％。制造该光波导装置的方法包括以下步骤：将基板放置在与真空容器内的第一高频电源连接的电极板上，将原料气体引入真空容器内，从第二高频电源供给的具有高频电力的真空容器，同时在从第一高频电源向电极板提供高频电力的同时在衬底上形成光波导膜。

3. 发明授权

US07228045B2 Optical waveguide device and method of manufacturing same 有权
标题翻译：光波导器件及其制造方法
公开(公告)号：US07228045B2
公开(公告)日：2007-06-05
申请号：US11087544
申请日：2005-03-24
申请人： Chie Fukuda , Tetsuya Hattori , Morihiro Seki
发明人： Chie Fukuda , Tetsuya Hattori , Morihiro Seki
IPC分类号： G02B6/10 , C03B37/10
CPC分类号： G02B6/136
摘要： A method of manufacturing an optical waveguide device that is capable of reducing the imbalance in the refractive index profile of a core, and an optical waveguide device that has the reduced imbalance in the refractive index profile are provided. The method of manufacturing an optical waveguide device has the steps of forming a groove in a first cladding layer having a first dopant that lowers the refractive index of the first cladding layer below the refractive index of pure silica glass, forming a core in the groove, and forming a second cladding layer having a second dopant that lowers the refractive index of the second cladding layer below the refractive index of pure silica glass, over the first cladding layer and the core.
摘要翻译：提供了一种制造能够减小芯的折射率分布不平衡的光波导器件的方法，以及折射率分布不平衡减小的光波导器件。制造光波导器件的方法具有以下步骤：在具有第一掺杂剂的第一包层中形成凹槽，该第一掺杂物将第一包层的折射率降低到纯石英玻璃的折射率以下，在沟槽中形成芯，以及形成具有第二掺杂剂的第二包层，所述第二掺杂剂使所述第二包层的折射率低于所述第一包层和所述芯的纯石英玻璃的折射率。

4. 发明申请

US20050213915A1 Method of manufacturing optical waveguide device 审中-公开
标题翻译：制造光波导器件的方法
公开(公告)号：US20050213915A1
公开(公告)日：2005-09-29
申请号：US11087545
申请日：2005-03-24
申请人： Chie Fukuda , Tetsuya Hattori , Morihiro Seki
发明人： Chie Fukuda , Tetsuya Hattori , Morihiro Seki
IPC分类号： G02B6/13 , G02B6/10 , G02B6/132
CPC分类号： G02B6/132
摘要： In a method of manufacturing an optical waveguide device, the surface of a core can be planarized in a concaving process. In this manufacturing method, a plasma CVD apparatus having a coil for producing plasma and a table for mounting products is used. In the method, a first cladding having a concavity is mounted on the table, a core film is formed on the first cladding while high-frequency electric power P1 is supplied to the coil and high-frequency electric power P2 is supplied to the table, a resist film is formed on the core film, a core is formed in the concavity by etching the resist film and the core film, and a second cladding is formed on the first cladding and the core.
摘要翻译：在制造光波导器件的方法中，芯的表面可以在凹陷过程中被平坦化。在该制造方法中，使用具有用于制造等离子体的线圈和用于安装产品的工作台的等离子体CVD装置。在该方法中，将具有凹度的第一包层安装在工作台上，在第一包层上形成芯膜，同时向线圈提供高频电力P 1 1，并将高频电功率P <2>被提供给表，在芯膜上形成抗蚀剂膜，通过蚀刻抗蚀剂膜和芯膜在凹部中形成芯，并且第二包层形成在第一个包层和核心。

5. 发明授权

US07092607B2 Optical waveguide device, and method of manufacturing optical waveguide device 有权
标题翻译：光波导器件及其制造方法
公开(公告)号：US07092607B2
公开(公告)日：2006-08-15
申请号：US11046859
申请日：2005-02-01
申请人： Chie Fukuda , Tetsuya Hattori
发明人： Chie Fukuda , Tetsuya Hattori
IPC分类号： G02B6/10 , C23C16/00
CPC分类号： G02B6/132 , G02B6/136
摘要： The present invention provides a glass optical waveguide device that comprises silica glass and is usable despite a relatively large refractive index difference between its core layer and cladding layer, and a method of manufacturing such device. This optical waveguide device includes a core layer on or over a substrate and a cladding layer that covers the core layer, wherein the core layer is made of silica glass containing an additive for raising the refractive index, and the relative refractive index difference of the core layer with respect to the cladding layer is at least 2.5%. The method of manufacturing this optical waveguide device includes the steps of placing a substrate over an electrode plate that is connected to a first high-frequency power supply within a vacuum vessel, introducing a raw material gas into the vacuum vessel and generating a plasma within the vacuum vessel with high-frequency power supplied from a second high-frequency power supply, and simultaneously forming an optical waveguide film over the substrate while supplying high-frequency power from the first high-frequency power supply to the electrode plate.
摘要翻译：本发明提供了一种玻璃光波导器件，其包括石英玻璃，并且尽管其芯层和包层之间的折射率差较大，但可以使用，以及制造该器件的方法。该光波导装置包括在基板上或基板上的芯层和覆盖芯层的包覆层，其中芯层由含有用于提高折射率的添加剂的石英玻璃制成，并且芯体的相对折射率差相对于包覆层的层为至少2.5％。制造该光波导装置的方法包括以下步骤：将基板放置在与真空容器内的第一高频电源连接的电极板上，将原料气体引入真空容器内，从第二高频电源供给的具有高频电力的真空容器，同时在从第一高频电源向电极板提供高频电力的同时在衬底上形成光波导膜。

6. 发明申请

US20050213917A1 Optical waveguide device and method of manufacturing same 有权
标题翻译：光波导器件及其制造方法
公开(公告)号：US20050213917A1
公开(公告)日：2005-09-29
申请号：US11087544
申请日：2005-03-24
申请人： Chie Fukuda , Tetsuya Hattori , Morihiro Seki
发明人： Chie Fukuda , Tetsuya Hattori , Morihiro Seki
IPC分类号： G02B6/13 , G02B6/10 , G02B6/122 , G02B6/136
CPC分类号： G02B6/136
摘要： A method of manufacturing an optical waveguide device that is capable of reducing the imbalance in the refractive index profile of a core, and an optical waveguide device that has the reduced imbalance in the refractive index profile are provided. The method of manufacturing an optical waveguide device has the steps of forming a groove in a first cladding layer having a first dopant that lowers the refractive index of the first cladding layer below the refractive index of pure silica glass, forming a core in the groove, and forming a second cladding layer having a second dopant that lowers the refractive index of the second cladding layer below the refractive index of pure silica glass, over the first cladding layer and the core.
摘要翻译：提供了一种制造能够减小芯的折射率分布不平衡的光波导器件的方法，以及折射率分布不平衡减小的光波导器件。制造光波导器件的方法具有以下步骤：在具有第一掺杂剂的第一包层中形成凹槽，该第一掺杂剂将第一包层的折射率降低到纯石英玻璃的折射率以下，在沟槽中形成芯，以及形成具有第二掺杂剂的第二包层，所述第二掺杂剂使所述第二包层的折射率低于所述第一包层和所述芯的纯石英玻璃的折射率。

7. 发明申请

US20080048569A1 DIELECTRIC ELEMENT AND ELECTRON EMITTER 审中-公开
标题翻译：电介质元件和电子发射器
公开(公告)号：US20080048569A1
公开(公告)日：2008-02-28
申请号：US11839031
申请日：2007-08-15
申请人： Kei Sato , Tetsuya Hattori , Hirofumi Yamaguchi
发明人： Kei Sato , Tetsuya Hattori , Hirofumi Yamaguchi
IPC分类号： G09G3/00 , B32B15/00
CPC分类号： H01J31/127 , B82Y10/00 , H01J1/312 , H01J2201/306 , H01J2201/3125 , Y10T428/12667
摘要： Provided are a dielectric element and an electron emitter exhibiting suppressed deterioration of element characteristics, which deterioration would otherwise occur with repeated use thereof. An electron emitter (i.e., a dielectric element) of the present invention is configured so as to operate through application of a predetermined driving electric field to an emitter layer. The emitter layer is formed of a dielectric layer containing, as a primary component, a PMN-PT-PZ ternary solid solution composition, and having a Curie temperature Tc (° C.) falling within a range of 60≦Tc≦150.
摘要翻译：提供了表现出元件特性劣化的电介质元件和电子发射体，其反复使用会出现劣化。本发明的电子发射体（即电介质元件）被配置为通过将预定的驱动电场施加到发射极层而进行工作。发射极层由包含PMN-PT-PZ三元固溶体组合物作为主要成分的介电层形成，并且居里温度Tc（℃）落在60

8. 发明申请

US20070188069A1 ELECTRON EMITTER 有权
标题翻译：电子发射器
公开(公告)号：US20070188069A1
公开(公告)日：2007-08-16
申请号：US11673769
申请日：2007-02-12
申请人： Kei Sato , Tetsuya Hattori , Hirofumi Yamaguchi , Shuichi Ozawa
发明人： Kei Sato , Tetsuya Hattori , Hirofumi Yamaguchi , Shuichi Ozawa
IPC分类号： H01J1/00
CPC分类号： H01J1/312 , B82Y10/00 , H01J1/30 , H01J2201/306 , H01J2201/312
摘要： Provided is a piezoelectric-film-type electron emitter of high durability exhibiting suppressed reduction in electron emission quantity, which reduction would otherwise occur with repeated use of the electron emitter. The electron emitter includes a substrate, a lower electrode, an emitter layer, and an upper electrode. The upper electrode has a plurality of openings, and an emitter section located on the top surface of the emitter layer is exposed through the openings to a reduced-pressure atmosphere. The electron emitter is configured so that when a pulse drive voltage Va is applied between the lower electrode and the upper electrode, electrons are accumulated on the emitter section, and then the electrons are emitted toward the reduced-pressure atmosphere. The emitter layer contains a primary component (i.e., a ferroelectric composition) and an additional component. The additional component contains a transition metal oxide of high oxidation number which can serve as an oxidizing agent by being converted into an oxide of the transition metal of lower oxidation number.
摘要翻译：提供了一种具有高耐久性的压电薄膜型电子发射体，其显示出抑制电子发射量的减少，但是通过反复使用电子发射器将会发生减小。电子发射器包括衬底，下电极，发射极层和上电极。上电极具有多个开口，并且位于发射极层的顶表面上的发射极部分通过开口暴露于减压气氛。电子发射器被配置为使得当在下电极和上电极之间施加脉冲驱动电压Va时，电子在发射极部分积聚，然后电子朝向减压气氛发射。发射极层包含主要组分（即铁电组合物）和附加组分。附加成分含有高氧化数的过渡金属氧化物，其可以通过转化为较低氧化数的过渡金属的氧化物而用作氧化剂。

9. 发明授权

US08877099B2 Ti3SiC2 based material, electrode, spark plug and manufacturing method thereof 有权
标题翻译： Ti3SiC2基材料，电极，火花塞及其制造方法
公开(公告)号：US08877099B2
公开(公告)日：2014-11-04
申请号：US13358887
申请日：2012-01-26
申请人： Tetsuya Hattori , Takafumi Kimata , Yoshimasa Kobayashi
发明人： Tetsuya Hattori , Takafumi Kimata , Yoshimasa Kobayashi
IPC分类号： H01B1/04 , C04B37/00 , H01T13/39 , C04B35/56 , C04B37/02 , H01T21/02 , C04B35/645
CPC分类号： H01T13/39 , C04B35/5615 , C04B35/5618 , C04B35/645 , C04B37/001 , C04B37/021 , C04B2235/3817 , C04B2235/3843 , C04B2235/3891 , C04B2235/402 , C04B2235/404 , C04B2235/428 , C04B2235/48 , C04B2235/658 , C04B2235/661 , C04B2235/77 , C04B2235/80 , C04B2235/9607 , C04B2237/343 , C04B2237/36 , C04B2237/405 , H01T21/02
摘要： The present invention provides a Ti3SiC2 based material that exhibits excellent arc resistance, an electrode, a spark plug, and methods of manufacturing the same. A Ti3SiC2 based material according to the present invention includes Ti3SiC2 as a main phase, the Ti3SiC2 based material having a TiC content of 0.5 mass % or less and an open porosity of 0.5% or less. It may be preferable that 0 to 30 mol % of Si in the main phase Ti3SiC2 be substituted with Al. A spark plug according to the present invention includes an electrode formed using the Ti3SiC2 based material.
摘要翻译：本发明提供了具有优异的耐电弧性的Ti 3 SiC 2系材料，电极，火花塞及其制造方法。根据本发明的Ti 3 SiC 2基材料包括Ti 3 SiC 2作为主相，Ti 3 SiC 2基材料的TiC含量为0.5质量％以下，开孔率为0.5％以下。主相Ti3SiC2中的0〜30mol％的Si可以优选被Al取代。根据本发明的火花塞包括使用基于Ti 3 SiC 2的材料形成的电极。

10. 发明授权

US07955880B2 Method of producing semiconductor optical device 失效
标题翻译：制造半导体光学器件的方法
公开(公告)号：US07955880B2
公开(公告)日：2011-06-07
申请号：US12481870
申请日：2009-06-10
申请人： Toshio Nomaguchi , Tetsuya Hattori , Kazunori Fujimoto
发明人： Toshio Nomaguchi , Tetsuya Hattori , Kazunori Fujimoto
IPC分类号： H01L21/00
CPC分类号： H01S5/2231 , H01S5/2214 , H01S5/3235 , H01S2304/04
摘要： A method of producing a semiconductor optical device includes a first step of growing a stacked semiconductor layer including a first III-V group compound semiconductor layer for an active layer on a substrate; a second step of forming a silicon oxide film on the stacked semiconductor layer, the silicon oxide film having a predetermined film stress and a predetermined thickness; a third step of forming a strip-shaped groove in the silicon oxide film by etching the silicon oxide film, using a resist pattern formed on the silicon oxide film, until a surface of the stacked semiconductor layer is exposed; and a fourth step of growing a second III-V group compound semiconductor layer in the groove using the silicon oxide film as a selective mask.
摘要翻译：一种制造半导体光学器件的方法包括：在衬底上生长包括用于有源层的第一III-V族化合物半导体层的堆叠半导体层的第一步骤; 在叠层半导体层上形成氧化硅膜的第二步骤，具有预定膜应力和预定厚度的氧化硅膜; 第三步骤，通过使用形成在氧化硅膜上的抗蚀图案，通过蚀刻氧化硅膜在氧化硅膜上形成条形槽，直到层叠半导体层的表面露出为止; 以及使用氧化硅膜作为选择性掩模在槽内生长第二III-V族化合物半导体层的第四步骤。

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