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    • 1. 发明申请
    • ELECTRON EMITTER
    • 电子发射器
    • US20070188069A1
    • 2007-08-16
    • US11673769
    • 2007-02-12
    • Kei SatoTetsuya HattoriHirofumi YamaguchiShuichi Ozawa
    • Kei SatoTetsuya HattoriHirofumi YamaguchiShuichi Ozawa
    • H01J1/00
    • H01J1/312B82Y10/00H01J1/30H01J2201/306H01J2201/312
    • Provided is a piezoelectric-film-type electron emitter of high durability exhibiting suppressed reduction in electron emission quantity, which reduction would otherwise occur with repeated use of the electron emitter. The electron emitter includes a substrate, a lower electrode, an emitter layer, and an upper electrode. The upper electrode has a plurality of openings, and an emitter section located on the top surface of the emitter layer is exposed through the openings to a reduced-pressure atmosphere. The electron emitter is configured so that when a pulse drive voltage Va is applied between the lower electrode and the upper electrode, electrons are accumulated on the emitter section, and then the electrons are emitted toward the reduced-pressure atmosphere. The emitter layer contains a primary component (i.e., a ferroelectric composition) and an additional component. The additional component contains a transition metal oxide of high oxidation number which can serve as an oxidizing agent by being converted into an oxide of the transition metal of lower oxidation number.
    • 提供了一种具有高耐久性的压电薄膜型电子发射体,其显示出抑制电子发射量的减少,但是通过反复使用电子发射器将会发生减小。 电子发射器包括衬底,下电极,发射极层和上电极。 上电极具有多个开口,并且位于发射极层的顶表面上的发射极部分通过开口暴露于减压气氛。 电子发射器被配置为使得当在下电极和上电极之间施加脉冲驱动电压Va时,电子在发射极部分积聚,然后电子朝向减压气氛发射。 发射极层包含主要组分(即铁电组合物)和附加组分。 附加成分含有高氧化数的过渡金属氧化物,其可以通过转化为较低氧化数的过渡金属的氧化物而用作氧化剂。
    • 2. 发明授权
    • Electron emitter
    • 电子发射体
    • US07576479B2
    • 2009-08-18
    • US11673769
    • 2007-02-12
    • Kei SatoTetsuya HattoriHirofumi YamaguchiShuichi Ozawa
    • Kei SatoTetsuya HattoriHirofumi YamaguchiShuichi Ozawa
    • H01J1/14H01J1/05
    • H01J1/312B82Y10/00H01J1/30H01J2201/306H01J2201/312
    • Provided is a piezoelectric-film-type electron emitter of high durability exhibiting suppressed reduction in electron emission quantity, which reduction would otherwise occur with repeated use of the electron emitter. The electron emitter includes a substrate, a lower electrode, an emitter layer, and an upper electrode. The upper electrode has a plurality of openings, and an emitter section located on the top surface of the emitter layer is exposed through the openings to a reduced-pressure atmosphere. The electron emitter is configured so that when a pulse drive voltage Va is applied between the lower electrode and the upper electrode, electrons are accumulated on the emitter section, and then the electrons are emitted toward the reduced-pressure atmosphere. The emitter layer contains a primary component (i.e., a ferroelectric composition) and an additional component. The additional component contains a transition metal oxide of high oxidation number which can serve as an oxidizing agent by being converted into an oxide of the transition metal of lower oxidation number.
    • 提供了一种具有高耐久性的压电薄膜型电子发射体,其显示出抑制电子发射量的减少,但是通过反复使用电子发射器将会发生减小。 电子发射器包括衬底,下电极,发射极层和上电极。 上电极具有多个开口,并且位于发射极层的顶表面上的发射极部分通过开口暴露于减压气氛。 电子发射器被配置为使得当在下电极和上电极之间施加脉冲驱动电压Va时,电子在发射极部分积聚,然后电子朝向减压气氛发射。 发射极层包含主要组分(即铁电组合物)和附加组分。 附加成分含有高氧化数的过渡金属氧化物,其可以通过转化为较低氧化数的过渡金属的氧化物而用作氧化剂。
    • 4. 发明授权
    • Piezoelectric/electrostrictive body, manufacturing method of the same, and piezoelectric/electrostrictive element
    • 压电/电致伸缩体,其制造方法以及压电/电致伸缩元件
    • US07803282B2
    • 2010-09-28
    • US11844560
    • 2007-08-24
    • Hirofumi YamaguchiShuichi Ozawa
    • Hirofumi YamaguchiShuichi Ozawa
    • H01L41/22
    • H01L41/1873C04B35/495C04B35/6262C04B2235/3201C04B2235/3203C04B2235/3215C04B2235/3234C04B2235/3236C04B2235/3249C04B2235/3251C04B2235/3262C04B2235/3296C04B2235/449C04B2235/5436C04B2235/5445C04B2235/765C04B2235/768H01L41/43
    • There is disclosed a piezoelectric/electrostrictive body in which a polarization direction of a domain indicates reversible conversion in an electric field and a strain ratio increases, a manufacturing method of the same, and a piezoelectric/electrostrictive element. The piezoelectric/electrostrictive body includes a matrix phase represented by a composition formula ABO3, and an additional, material phase included in the matrix phase, having at least a crystal structure of tetragonal system, represented by a composition formula ABO3 and having a composition different from that of the matrix phase. For example, an alkali-niobate-based material of the tetragonal system, BaTiO3, PZT, PbTiO3, or (Bi0.5, Na0.5)TiO3 is added as an additional material forming the additional material phase to an alkali-niobate-based matrix material forming the matrix phase to form the piezoelectric/electrostrictive body. An amount of the additional material to be added has a volume ratio of 5 vol % or more and 30 vol % or less (5 vol % or more and 45 vol % or less in a case where an additional material having a composition to which Mn has been added is used) with respect to the matrix material.
    • 公开了一种压电/电致伸缩体,其中畴的极化方向表示电场中的可逆转换和应变比增加,其制造方法和压电/电致伸缩元件。 压电/电致伸缩体包括由组成式ABO 3表示的基体相以及包含在基体相中的另外的材料相,其具有由组成式ABO 3表示的组成式ABO 3表示的至少具有四方晶系的晶体结构,并且具有不同于 矩阵相的相位。 例如,作为形成附加材料相的附加材料,添加碱性铌酸盐基材料BaTiO3,PZT,PbTiO3或(Bi0.5,Na0.5)TiO3作为碱铌酸盐系, 形成基体相的基体材料形成压电/电致伸缩体。 添加的附加材料的量的体积比为5体积%以上且30体积%以下(在具有Mn组成的附加材料的情况下为5体积%以上且45体积%以下的情况 已经添加)相对于基质材料。