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1. 发明授权

US4396890A Variable gain amplifier 失效
标题翻译：可变增益放大器
公开(公告)号：US4396890A
公开(公告)日：1983-08-02
申请号：US146273
申请日：1980-05-05
申请人： Kazuo Kato , Takao Sasayama , Takashi Sase
发明人： Kazuo Kato , Takao Sasayama , Takashi Sase
IPC分类号： H03G3/12 , H03G1/00 , H03G3/00 , H03G3/02 , H03F1/34
CPC分类号： H03G3/00 , H03G1/0088
摘要： A variable gain amplifier includes an amplifier for amplifying an input signal, a switch controlled with a given duty factor and a smoothing filter connected to the switch. The filter and the switch constitutes a negative feedback loop for the amplifier of which amplification factor is variably controlled by varying the duty factor of the switch.
摘要翻译：可变增益放大器包括用于放大输入信号的放大器，以给定占空比控制的开关和连接到开关的平滑滤波器。滤波器和开关构成放大器的负反馈回路，放大器通过改变开关的占空因数可变地控制放大系数。

2. 发明授权

US5600268A Gate circuit of combined field-effect and bipolar transistors 失效
标题翻译：组合场效应和双极晶体管的门电路
公开(公告)号：US5600268A
公开(公告)日：1997-02-04
申请号：US315594
申请日：1994-09-30
申请人： Ikuro Masuda , Kazuo Kato , Takao Sasayama , Yoji Nishio , Shigeo Kuboki , Masahiro Iwamura
发明人： Ikuro Masuda , Kazuo Kato , Takao Sasayama , Yoji Nishio , Shigeo Kuboki , Masahiro Iwamura
IPC分类号： H01L27/06 , H03K19/01 , H03K19/017 , H03K19/0944
CPC分类号： H03K19/09448 , H01L27/0623 , H03K19/01 , H03K19/01721
摘要： A high-speed operation, low-power consumption gate circuit structure comprises a combination of complementary field-effect-transistors and bipolar transistors and discharge means for discharging accumulated charges from these transistors when the field-effect-transistors and bipolar transistors are turned off.
摘要翻译：低功耗门电路结构包括互补场效应晶体管和双极型晶体管的组合，以及放电装置，用于当场效应晶体管和双极晶体管截止时从这些晶体管放电累积的电荷。

3. 发明授权

US4604899A Semiconductor-type pressure transducer 失效
标题翻译：半导体式压力传感器
公开(公告)号：US4604899A
公开(公告)日：1986-08-12
申请号：US597753
申请日：1984-04-06
申请人： Kazuji Yamada , Hideo Sato , Kanji Kawakami , Kazuo Kato , Takao Sasayama
发明人： Kazuji Yamada , Hideo Sato , Kanji Kawakami , Kazuo Kato , Takao Sasayama
IPC分类号： G01R27/02 , G01B7/16 , G01D3/028 , G01L1/22 , G01L9/00 , G01L9/04 , G01L9/06 , G01L19/04
CPC分类号： G01L1/2281 , G01L9/065
摘要： A semiconductor-type pressure transducer is disclosed in which the pressure change is detected as a resistance change by use of a bridge circuit including at least a gauge resistor changing with an external force. Each gauge resistor is made of a PN junction of a semiconductor. The pressure transducer further comprises an amplification factor compensator for cancelling the effect of the temperature change of the gauge resistors making up the bridge circuit on the amplification factor of the amplification circuit for amplifying the output of the bridge circuit.
摘要翻译：公开了一种半导体型压力传感器，其中通过使用至少包括用外力改变的量规电阻器的桥式电路将压力变化检测为电阻变化。每个规格电阻由半导体的PN结制成。压力传感器还包括放大系数补偿器，用于抵消构成桥式电路的量规电阻器的温度变化对放大电路的放大系数的影响，用于放大桥式电路的输出。

4. 发明授权

US4556807A Pressure transducer with temperature compensation circuit 失效
标题翻译：带温度补偿电路的压力传感器
公开(公告)号：US4556807A
公开(公告)日：1985-12-03
申请号：US522227
申请日：1983-08-11
申请人： Kazuji Yamada , Hideo Sato , Kazuo Kato , Takao Sasayama , Kanji Kawakami , Ryosaku Kanzawa
发明人： Kazuji Yamada , Hideo Sato , Kazuo Kato , Takao Sasayama , Kanji Kawakami , Ryosaku Kanzawa
IPC分类号： G01L9/04 , G01B7/16 , G01L9/00 , G01L9/06
CPC分类号： G01L9/0054 , G01L9/065 , Y10S323/907
摘要： A pressure transducer is disclosed comprising a pressure sensor portion having gage resistors in bridge formed on a thin diaphragm of a semiconductor substrate, and a power supply connected to the pressure sensor portion for driving the pressure sensor. The power supply includes a first current source for supplying a temperature-dependent current equivalent to the sum of a current almost proportional to the absolute temperature and a current independent of temperature, and a second current source for sinking the current almost proportional to the temperature characteristic of the gage resistors from the current of the first current source. A temperature compensation circuit is additionally provided to drive the bridge circuit by the difference between the temperature-dependent current and the current proportional to the temperature characteristic in a constant-current driving mode, and by a voltage proportional to the current difference when the output of the bridge circuit is connected to an amplifier whose gain is dependent on temperature.
摘要翻译：公开了一种压力传感器，包括压电传感器部分，该压力传感器部分具有形成在半导体衬底的薄膜上的桥中的量规电阻器，以及连接到用于驱动压力传感器的压力传感器部分的电源。电源包括用于提供等效于与绝对温度几乎成比例的电流和独立于温度的电流的和的温度相关电流的第一电流源，以及用于将大体上与温度特性成比例的电流吸收的第二电流源的电流从第一个电流源的电流。另外提供温度补偿电路以通过温度相关电流和与恒定电流驱动模式中的温度特性成比例的电流之间的差异来驱动桥式电路，并且通过与当电流差异的电流成比例的电压来驱动桥式电路桥接电路连接到增益取决于温度的放大器。

5. 发明授权

US4452210A Fuel injection valve drive circuit 失效
标题翻译：燃油喷射阀驱动电路
公开(公告)号：US4452210A
公开(公告)日：1984-06-05
申请号：US420885
申请日：1982-09-21
申请人： Takao Sasayama , Kazuo Kato
发明人： Takao Sasayama , Kazuo Kato
IPC分类号： H01F7/18 , F02D41/20 , F16K31/06 , F02B3/00
CPC分类号： F02D41/20 , F02D2041/2027 , F02D2041/2034 , F02D2041/2058
摘要： Disclosed is a fuel injection valve drive circuit for use in an internal combustion engine wherein the excitation current supplied to the fuel injection valve winding is controlled on a feedback basis so as to maintain the specified value during the period of the valve opening command signal. A control signal based on the difference between the signal representing the excitation current and the reference signal is produced, and the excitation current is controlled by the pulse width modulation signal which is produced based on the magnitude of the control signal.
摘要翻译：公开了一种用于内燃机的燃料喷射阀驱动电路，其中供应给燃料喷射阀线圈的励磁电流被控制在反馈基础上，以便在开阀指令信号期间保持指定值。产生基于表示励磁电流的信号与参考信号之间的差的控制信号，并且通过基于控制信号的幅度产生的脉宽调制信号来控制励磁电流。

6. 发明授权

US5239212A Gate circuit of combined field-effect and bipolar transistors with an improved discharge arrangement 失效
标题翻译：具有改善放电布置的组合场效应和双极晶体管的栅极电路
公开(公告)号：US5239212A
公开(公告)日：1993-08-24
申请号：US986891
申请日：1992-12-08
申请人： Ikuro Masuda , Kazuo Kato , Takao Sasayama , Yoji Nishio , Shigeo Kuboki , Masahiro Iwamura
发明人： Ikuro Masuda , Kazuo Kato , Takao Sasayama , Yoji Nishio , Shigeo Kuboki , Masahiro Iwamura
IPC分类号： H01L27/06 , H03K19/01 , H03K19/017 , H03K19/0944
CPC分类号： H03K19/01 , H01L27/0623 , H03K19/01721 , H03K19/09448
摘要： A high-speed operation, low-power consumption gate circuit structure comprises a combination of complementary field-effect-transistors and bipolar transistors and discharge means for discharging accumulated charges from these transistors when the field-effect-transistors and bipolar transistors are turned off.
摘要翻译：低功耗门电路结构包括互补场效应晶体管和双极型晶体管的组合，以及放电装置，用于在场效应晶体管和双极晶体管截止时从这些晶体管放电累积的电荷。

7. 发明授权

US5001366A Gate circuit of combined field-effect and bipolar transistors 失效
标题翻译：组合场效应和双极晶体管的门电路
公开(公告)号：US5001366A
公开(公告)日：1991-03-19
申请号：US127206
申请日：1987-12-01
申请人： Ikuro Masuda , Kazuo Kato , Takao Sasayama , Yoji Nishio , Shigeo Kuboki
发明人： Ikuro Masuda , Kazuo Kato , Takao Sasayama , Yoji Nishio , Shigeo Kuboki
IPC分类号： H03K19/08 , H01L27/06 , H03K19/01 , H03K19/017 , H03K19/094 , H03K19/0944 , H03K19/0952
CPC分类号： H01L27/0623 , H03K19/01 , H03K19/01721 , H03K19/09448
摘要： A high-speed operation, low-space consumption gate circuit structure-comprises a combination of complementary field-effect-transistors and bipolar transistors and discharge means for discharging accumulated charges from these transistors when the field-effect-transistors and bipolar transistors are turned off.

8. 发明授权

US4829201A Gate circuit of combined field-effect and bipolar transistors 失效
标题翻译：组合场效应和双极晶体管的门电路
公开(公告)号：US4829201A
公开(公告)日：1989-05-09
申请号：US127183
申请日：1987-12-01
申请人： Ikuro Masuda , Kazuo Kato , Takao Sasayama , Yoji Nishio , Shigeo Kuboki , Masahiro Iwamura
发明人： Ikuro Masuda , Kazuo Kato , Takao Sasayama , Yoji Nishio , Shigeo Kuboki , Masahiro Iwamura
IPC分类号： H03K19/08 , H01L27/06 , H03K19/01 , H03K19/017 , H03K19/094 , H03K19/0944 , H03K19/0952
CPC分类号： H01L27/0623 , H03K19/01 , H03K19/01721 , H03K19/09448
摘要： A high-speed operation, low-power consumption gate circuit structure comprises a combination of complementary field-effect-transistors and bipolar transistors and discharge means for discharging accumulated charges from these transistors when the field-effect-transistors and bipolar transistors are turned off.

9. 发明授权

US4890017A CMOS-BiCMOS gate circuit 失效
标题翻译： CMOS-BiCMOS门电路
公开(公告)号：US4890017A
公开(公告)日：1989-12-26
申请号：US127184
申请日：1987-12-01
申请人： Ikuro Masuda , Kazuo Kato , Takao Sasayama , Yoji Nishio , Shigeo Kuboki , Masahiro Iwamura
发明人： Ikuro Masuda , Kazuo Kato , Takao Sasayama , Yoji Nishio , Shigeo Kuboki , Masahiro Iwamura
IPC分类号： H03K19/08 , H01L27/06 , H03K19/01 , H03K19/017 , H03K19/094 , H03K19/0944 , H03K19/0952
CPC分类号： H01L27/0623 , H03K19/01 , H03K19/01721 , H03K19/09448
摘要： A high-speed operation, low-power consumption gate circuit structure comprises a combination of complementary field-effect-transistors and bipolar transistors and discharge means for discharging accumulated charges from these transistors when the field-effect-transistors and bipolar transistors are turned off.

10. 发明授权

US4719373A Gate circuit of combined field-effect and bipolar transistors 失效
标题翻译：组合场效应和双极晶体管的门电路
公开(公告)号：US4719373A
公开(公告)日：1988-01-12
申请号：US45216
申请日：1987-04-30
申请人： Ikuro Masuda , Kazuo Kato , Takao Sasayama , Yoji Nishio , Shigeo Kuboki , Masahiro Iwamura
发明人： Ikuro Masuda , Kazuo Kato , Takao Sasayama , Yoji Nishio , Shigeo Kuboki , Masahiro Iwamura
IPC分类号： H03K19/08 , H01L27/06 , H03K19/01 , H03K19/017 , H03K19/094 , H03K19/0944 , H03K19/0952 , H03K17/60 , H03K3/33
CPC分类号： H01L27/0623 , H03K19/01 , H03K19/01721 , H03K19/09448
摘要： A high-speed operation, low-power consumption gate circuit structure comprises a combination of complementary field-effect-transistors and bipolar transistors and discharge means for discharging accumulated charges from these transistors when the field-effect-transistors and bipolar transistors are turned off.

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