专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06961761B2 System and method for partitioning a computer system into domains 有权
标题翻译：将计算机系统划分为域的系统和方法
公开(公告)号：US06961761B2
公开(公告)日：2005-11-01
申请号：US09861293
申请日：2001-05-17
申请人： Kazunori Masuyama , Patrick N. Conway , Hitoshi Oi , Jeremy Farrell , Sudheer Miryala , Yukio Nishimura , Prabhu Murthy
发明人： Kazunori Masuyama , Patrick N. Conway , Hitoshi Oi , Jeremy Farrell , Sudheer Miryala , Yukio Nishimura , Prabhu Murthy
IPC分类号： G06F15/177 , G06F9/50 , H04L12/24
CPC分类号： H04L41/082 , H04L41/0803 , H04L41/12
摘要： A domain partitioning system for a multi-node computer system is disclosed. An external server manager is coupled to a domain configuration unit by a dedicated sideband channel. The server manager has write privileges to the domain configuration unit that allows the server manager to control the domain partitioning and the routing tables. None of the domains of the computer system are permitted write access to the domain configuration unit. In one embodiment, the domain configuration unit is a set of domain partition registers and routing table registers coupled to a system interconnect.
摘要翻译：公开了一种用于多节点计算机系统的域分割系统。外部服务器管理器通过专用边带信道耦合到域配置单元。服务器管理员对域配置单元具有写入权限，允许服务器管理器控制域分区和路由表。计算机系统的任何域都不允许对域配置单元进行写访问。在一个实施例中，域配置单元是耦合到系统互连的一组域分区寄存器和路由表寄存器。

2. 发明授权

US07213081B2 Dynamic determination of memory mapped input output range granularity for multi-node computer system 失效
标题翻译：动态确定多节点计算机系统的内存映射输入输出范围粒度
公开(公告)号：US07213081B2
公开(公告)日：2007-05-01
申请号：US10122043
申请日：2002-04-11
申请人： Prabhunandan B. Narasimhamurthy , Yukio Nishimura , Sudheer Miryala , Kazunori Masuyama
发明人： Prabhunandan B. Narasimhamurthy , Yukio Nishimura , Sudheer Miryala , Kazunori Masuyama
IPC分类号： G06F3/00
CPC分类号： G06F12/063
摘要： A method and system enables dynamic support of memory mapping devices in a multi-node computer system. One of central process unit (CPU) nodes determines a total amount of MMIO address spaces that are needed for all MMIO devices and generates an optimized granularity to support the total amount of MMIO address spaces. Based on the granularity, a CPU node controller configures MMIO range registers of the interconnect and other MMIO registers in IO nodes and CPU node controllers to support dynamic changes of MMIO address space requirements of the system.
摘要翻译：一种方法和系统支持多节点计算机系统中的存储器映射设备的动态支持。中央处理单元（CPU）节点之一确定所有MMIO设备所需的MMIO地址空间的总量，并生成优化的粒度以支持MMIO地址空间的总量。基于粒度，CPU节点控制器配置IO节点和CPU节点控制器中的互连和其他MMIO寄存器的MMIO范围寄存器，以支持系统的MMIO地址空间要求的动态更改。

3. 发明授权

US07076576B2 Data transfer in multi-node computer system 失效
公开(公告)号：US07076576B2
公开(公告)日：2006-07-11
申请号：US10114525
申请日：2002-04-01
申请人： Yukio Nishimura , Prabhunandan B. Narasimharmurthy , Sudheer Miryala , Kazunori Masuyama
发明人： Yukio Nishimura , Prabhunandan B. Narasimharmurthy , Sudheer Miryala , Kazunori Masuyama
IPC分类号： G06F13/00
CPC分类号： G06F15/17375
摘要： A method and system transfers data between intra-node firmware and inter-nodes firmware in a multi-node computer system using reduced hardware resources. A set of control codes and data transfer functions are provided to enable data communications between computer nodes and inter-nodes controller through a one-byte control module and a one-byte data module.

4. 发明授权

US09182674B2 Immersion upper layer film forming composition and method of forming photoresist pattern 有权
标题翻译：浸渍上层成膜组合物和形成光致抗蚀剂图案的方法
公开(公告)号：US09182674B2
公开(公告)日：2015-11-10
申请号：US13550733
申请日：2012-07-17
申请人： Toru Kimura , Yukio Nishimura , Tomohiro Utaka , Hiroaki Nemoto , Atsushi Nakamura , Takashi Chiba , Hiroki Nakagawa
发明人： Toru Kimura , Yukio Nishimura , Tomohiro Utaka , Hiroaki Nemoto , Atsushi Nakamura , Takashi Chiba , Hiroki Nakagawa
IPC分类号： G03F7/11 , G03F7/20 , C08F214/18 , C08F216/10 , C08F220/18 , C08F220/24
CPC分类号： G03F7/2041 , C08F214/182 , C08F214/186 , C08F216/10 , C08F220/18 , C08F220/24 , G03F7/11 , C08F220/06 , C08F2222/1013
摘要： An immersion upper layer film composition includes a resin and a solvent. The resin forms a water-stable film during irradiation and is dissolved in a subsequent developer. The solvent contains a monovalent alcohol having 6 or less carbon atoms. The composition is to be applied to form a coat on a photoresist film in an immersion exposure process in which the photoresist film is irradiated through water provided between a lens and the photoresist film.
摘要翻译：浸渍上层膜组合物包括树脂和溶剂。树脂在照射期间形成水稳定膜并溶解在随后的显影剂中。溶剂含有具有6个或更少碳原子的一价醇。在浸渍曝光工艺中，应用该组合物在光致抗蚀剂膜上形成涂层，其中光致抗蚀剂膜通过设置在透镜和光致抗蚀剂膜之间的水进行照射。

5. 发明授权

US08791020B2 Silicon-containing film, resin composition, and pattern formation method 有权
标题翻译：含硅膜，树脂组合物和图案形成方法
公开(公告)号：US08791020B2
公开(公告)日：2014-07-29
申请号：US13193555
申请日：2011-07-28
申请人： Takashi Mori , Masato Tanaka , Yukio Nishimura , Yoshikazu Yamaguchi
发明人： Takashi Mori , Masato Tanaka , Yukio Nishimura , Yoshikazu Yamaguchi
IPC分类号： H01L21/311
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , H01L21/02126 , H01L21/02214 , H01L21/02216 , H01L21/31144
摘要： A pattern-forming method includes forming a silicon-containing film on a substrate, the silicon-containing film having a mass ratio of silicon atoms to carbon atoms of 2 to 12. A shape transfer target layer is formed on the silicon-containing film. A fine pattern is transferred to the shape transfer target layer using a stamper that has a fine pattern to form a resist pattern. The silicon-containing film and the substrate are dry-etched using the resist pattern as a mask to form a pattern on the substrate in nanoimprint lithography. According to another aspect of the invention, a silicon-containing film includes silicon atoms and carbon atoms. A mass ratio of silicon atoms to carbon atoms is 2 to 12. The silicon-containing film is used for a pattern-forming method employed in nanoimprint lithography.
摘要翻译：图案形成方法包括在基板上形成含硅膜，所述含硅膜的硅原子与碳原子的质量比为2〜12。在含硅膜上形成形状转印目标层。使用具有精细图案的压模形成抗蚀剂图案，将精细图案转印到形状转印目标层。使用抗蚀剂图案作为掩模对含硅膜和衬底进行干蚀刻，以在纳米压印光刻中在衬底上形成图案。根据本发明的另一方面，含硅膜包括硅原子和碳原子。硅原子与碳原子的质量比为2〜12。含硅膜用于纳米压印光刻中使用的图案形成方法。

6. 发明授权

US08572428B2 Storage apparatus and control method for storage apparatus 有权
标题翻译：存储装置的存储装置和控制方法
公开(公告)号：US08572428B2
公开(公告)日：2013-10-29
申请号：US13279491
申请日：2011-10-24
申请人： Satoru Nishita , Yukio Nishimura
发明人： Satoru Nishita , Yukio Nishimura
IPC分类号： G06F11/00
CPC分类号： G06F11/1443 , G06F11/10 , G06F11/2089 , H04L1/18
摘要： A first controller stores externally input data to a memory of the first controller, reads data stored in the memory of the first controller and transmits the data to a second controller through a first controller bridge, detects a failure at the first controller bridge in transmission of the data. The second controller receives the data through a second controller bridge, writes the received data into a memory of the second controller, and determines whether the failure is caused by the first controller if a failure occurs in the memory controller and the second controller bridge. If a failure is detected in the first controller and the second controller and the failure is caused by the first controller, the first controller transmits the data causing the failure during transmission through the first controller bridge and the second controller receives the data through the second controller bridge.
摘要翻译：第一控制器将外部输入数据存储到第一控制器的存储器中，读取存储在第一控制器的存储器中的数据，并通过第一控制器桥将数据发送到第二控制器，在第一控制器桥传输期间检测故障数据。第二控制器通过第二控制器桥接器接收数据，将接收到的数据写入第二控制器的存储器，并且如果在存储器控制器和第二控制器桥中发生故障，则确定是否由第一控制器引起故障。如果在第一控制器和第二控制器中检测到故障，并且由第一控制器引起故障，则第一控制器在通过第一控制器桥传输期间发送导致故障的数据，并且第二控制器通过第二控制器接收数据桥。

7. 发明授权

US08431332B2 Composition for forming upper layer film for immersion exposure, upper layer film for immersion exposure, and method of forming photoresist pattern 有权
标题翻译：用于形成用于浸渍曝光的上层膜的组合物，用于浸渍曝光的上层膜，以及形成光致抗蚀剂图案的方法
公开(公告)号：US08431332B2
公开(公告)日：2013-04-30
申请号：US12680200
申请日：2008-09-10
申请人： Daita Kouno , Norihiko Sugie , Gouji Wakamatsu , Norihiro Natsume , Yukio Nishimura , Makoto Sugiura
发明人： Daita Kouno , Norihiko Sugie , Gouji Wakamatsu , Norihiro Natsume , Yukio Nishimura , Makoto Sugiura
IPC分类号： G03F7/11 , G03F7/09 , G03F7/38
CPC分类号： G03F7/11 , G03F7/2041
摘要： The object of the invention is to provide a composition for forming an upper layer film for immersion exposure capable of forming an upper layer film effectively inhibited from developing defects through an immersion exposure process, such as a watermark defect and dissolution residue defect. Also provided are an upper layer film for immersion exposure and a method of forming a resist pattern. The composition for forming an upper layer film includes a resin ingredient and a solvent. The resin ingredient includes a resin (A) having at least one kind of repeating units selected among those represented by the formulae (1-1) to (1-3) and at least either of the two kinds of repeating units represented by the formulae (2-1) and (2-2). (1-1) (1-2) (1-3) (2-1) (2-2) [In the formulae, R1 represents hydrogen or methyl; R2 and R3 each represents methylene, linear or branched C2-6 alkylene, or alicyclic C4-12 alkylene; R4 represents hydrogen or methyl; and R5 represents a single bond, methylene, or linear or branched C2-6 alkylene.].
摘要翻译：本发明的目的是提供一种用于形成用于浸渍曝光的上层膜的组合物，其能够通过诸如水印缺陷和溶解残留缺陷的浸渍曝光工艺有效地防止显影缺陷的形成。还提供了用于浸渍曝光的上层膜和形成抗蚀剂图案的方法。用于形成上层膜的组合物包括树脂成分和溶剂。树脂成分包括具有选自由式（1-1）〜（1-3）表示的重复单元中的至少一种重复单元的树脂（A）和由式（2-1）和（2-2）。（1-1）（1-2）（1-3）（2-1）（2-2）[式中，R1表示氢或甲基; R2和R3各自表示亚甲基，直链或支链C 2-6亚烷基或脂环族C 4-12亚烷基; R4代表氢或甲基; 并且R 5表示单键，亚甲基或直链或支链C 2-6亚烷基。

8. 发明授权

US07951524B2 Self-topcoating photoresist for photolithography 有权
标题翻译：用于光刻的自表面光刻胶
公开(公告)号：US07951524B2
公开(公告)日：2011-05-31
申请号：US12023108
申请日：2008-01-31
申请人： Robert Allen , Phillip Brock , Shiro Kusumoto , Yukio Nishimura , Daniel P. Sanders , Mark Steven Slezak , Ratnam Sooriyakumaran , Linda K. Sundberg , Hoa Trung , Gregory M. Wallraff
发明人： Robert Allen , Phillip Brock , Shiro Kusumoto , Yukio Nishimura , Daniel P. Sanders , Mark Steven Slezak , Ratnam Sooriyakumaran , Linda K. Sundberg , Hoa Trung , Gregory M. Wallraff
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/36 , G03F7/38
CPC分类号： G03F7/2041 , C08F220/22 , G03F7/0046 , G03F7/0397 , G03F7/11 , Y10S430/108 , Y10S430/111
摘要： Photoresist additive polymers and photoresist formulations that can be used in immersion lithography without the use of an additional topcoat. The resist compositions include a photoresist polymer, at least one photoacid generator, a solvent; and a photoresist additive polymer. Also a method of forming using photoresist formulations including photoresist additive polymers.
摘要翻译：光刻胶添加剂聚合物和光致抗蚀剂制剂，可用于浸没式光刻，而不使用额外的面漆。抗蚀剂组合物包括光致抗蚀剂聚合物，至少一种光致酸产生剂，溶剂; 和光致抗蚀剂添加剂聚合物。还有一种使用包括光致抗蚀剂添加剂聚合物的光致抗蚀剂制剂的方法。

9. 发明申请

US20100040974A1 UPPER LAYER FILM FORMING COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN 有权
标题翻译：上层膜成膜组合物及形成光电子图案的方法
公开(公告)号：US20100040974A1
公开(公告)日：2010-02-18
申请号：US12442377
申请日：2007-09-21
申请人： Daita Kouno , Hiromitsu Nakashima , Yukio Nishimura
发明人： Daita Kouno , Hiromitsu Nakashima , Yukio Nishimura
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0397 , G03F7/0046 , G03F7/095 , G03F7/11 , G03F7/2041 , H01L21/0276
摘要： An upper layer film forming composition for forming an upper layer film on the surface of a photoresist film includes (A) a resin dissolvable in a developer for the photoresist film and (B) a compound having a sulfonic acid residue group, the composition forming an upper layer film with a receding contact angle to water of 70° or more. The upper layer film forming composition of the present invention can form an upper layer film which has a sufficient transparency and is stably maintained without eluting the components into a medium without being intermixed with a photoresist film, can form a resist pattern with high resolution while effectively suppressing a defect, and can suppress a blob defect.
摘要翻译：在光致抗蚀剂膜的表面上形成上层膜的上层成膜组合物包括（A）可溶于光致抗蚀剂膜的显影剂中的树脂和（B）具有磺酸残基的化合物，该组合物形成上层膜与水的后退接触角为70°以上。本发明的上层成膜组合物可以形成具有足够透明度且稳定保持的上层膜，而不将组分洗脱到介质中而不与光致抗蚀剂膜混合，可以有效地形成高分辨率的抗蚀剂图案抑制缺陷，能够抑制斑点缺陷。

10. 发明申请

US20100021852A1 COMPOSITION FOR FORMATION OF UPPER LAYER FILM, AND METHOD FOR FORMATION OF PHOTORESIST PATTERN 有权
标题翻译：用于形成上层膜的组合物和形成光电子图案的方法
公开(公告)号：US20100021852A1
公开(公告)日：2010-01-28
申请号：US12445152
申请日：2007-10-11
申请人： Yukio Nishimura , Norihiko Sugie , Hiromitsu Nakashima , Norihiro Natsume , Daita Kouno
发明人： Yukio Nishimura , Norihiko Sugie , Hiromitsu Nakashima , Norihiro Natsume , Daita Kouno
IPC分类号： G03F7/00 , C09D133/04
CPC分类号： G03F7/11 , G03F7/2041
摘要： A composition for formation of upper layer film, which is used for forming an upper layer film on the surface of a photoresist film and which comprises a resin (A) having a repeating unit represented by the following general formula (1-1) and not having a repeating unit represented by the following general formula (1-2), and a resin (B) having a repeating unit represented by the following general formula (1-2) and not having a repeating unit represented by the following general formula (1-1). [In the general formulas (1-1) and (1-2), R1 is hydrogen or the like; R2 is single bonds or the like; and R3 is a fluorine-substituted, linear or branched alkyl group having 1 to 12 carbon atoms, or the like.] The composition can form an upper layer film giving a sufficiently high receded contact angle.
摘要翻译：一种用于形成上层膜的组合物，其用于在光致抗蚀剂膜的表面上形成上层膜，并且其包含具有由以下通式（1-1）表示的重复单元的树脂（A），而不包含具有由以下通式（1-2）表示的重复单元和具有由以下通式（1-2）表示的重复单元并且不具有由以下通式表示的重复单元的树脂（B） 1-1）。 [通式（1-1）和（1-2）中，R 1为氢等， R2是单键等; R3是具有1〜12个碳原子的氟取代的直链或支链烷基等。]组合物可以形成具有足够高的后退接触角的上层膜。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式