专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4981377A Printer for use with a continuous form and cut sheets 失效
标题翻译：打印机用于连续的形式和切纸
公开(公告)号：US4981377A
公开(公告)日：1991-01-01
申请号：US394981
申请日：1989-08-17
申请人： Kazumi Hasegawa , Satoru Sugiyama , Hiromi Hibino , Akira Takamura
发明人： Kazumi Hasegawa , Satoru Sugiyama , Hiromi Hibino , Akira Takamura
IPC分类号： B41J11/48 , B41J13/00 , B41J15/00
CPC分类号： B41J11/48
摘要： A printer of a type ensuring a rapid and easy shift between a mode for effecting printing onto a continuous form and another mode for printing onto a cut sheet, comprises a delivery unit pivotally supported by a printer body frame. When the delivery unit is held at its first operational position wherein a platen fixed to the same unit is disposed close to a printing head, a continuous form delivered from tractors is further delivered along a continuous form feeding path which forms a flat plane, and printing is performed on the aforementioned platen of the delivery unit. On the other hand, when a cassette is mounted to the printer after the delivery unit is moved downward up to a second operational position, a cut sheet delivered from the cassette is delivered along a cut sheet feeding path which forms the same plane as the aforesaid flat plane, to be printed on a platen fixed to the cassette.
摘要翻译：一种确保在连续形式上进行打印的模式和用于打印到切割片材上的另一模式之间的快速和容易的移动的打印机包括由打印机主体框枢转地支撑的传送单元。当输送单元被保持在其固定到同一单元的压板靠近打印头的第一操作位置时，从拖拉机输送的连续形式进一步沿着形成平面的连续形式馈送路径输送，并且打印在上述输送单元的压板上进行。另一方面，当在输送单元向下移动到第二操作位置之后将盒安装到打印机上时，从盒子传送的切割片材沿着形成与上述相同的平面的切割片材进给路径被传送平面，打印在固定在盒式磁带上的压板上。

2. 发明授权

US07847132B2 Hepatic fibrosis inhibitor 有权
公开(公告)号：US07847132B2
公开(公告)日：2010-12-07
申请号：US12591982
申请日：2009-12-07
申请人： Naohisa Ishikawa , Satoru Sugiyama , Tokutaro Miki , Hiroshi Nishikawa
发明人： Naohisa Ishikawa , Satoru Sugiyama , Tokutaro Miki , Hiroshi Nishikawa
IPC分类号： C07C409/00 , A61K31/045
CPC分类号： A61K31/085 , A61K31/216
摘要： The progression of hepatic fibrosis and hepatic cirrhosis caused by various hepatic disorders and damages such as chronic hepatitis can be restrained by hepatic fibrosis inhibitor containing a compound represented by the following chemical formula: wherein, R1 represents an alkyl group with a carbon number of 4 to 8, and R2 represents a hydrogen atom, alkylcarbonyl group with a carbon number of 2 to 6, or alkoxycarbonyl group with a carbon number of 2 to 6.

3. 发明授权

US08796136B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08796136B2
公开(公告)日：2014-08-05
申请号：US13435403
申请日：2012-03-30
申请人： Satoru Sugiyama , Yuuta Nishioka
发明人： Satoru Sugiyama , Yuuta Nishioka
IPC分类号： H01L21/3205
CPC分类号： H01L23/481 , H01L21/76831 , H01L21/76898 , H01L2224/0401 , H01L2224/05009 , H01L2224/05572 , H01L2224/13025 , H01L2224/131 , H01L2924/00014 , H01L2924/13091 , H01L2924/014 , H01L2924/00012 , H01L2224/05552 , H01L2924/00
摘要： A semiconductor device is provided, which includes an annular insulation separation portion penetrating a semiconductor substrate, and an electrode penetrating the semiconductor substrate in a region surrounded by the annular insulation separation portion, wherein the insulation separation portion includes at least a first film that gives compressive stress in a depth direction on the side of a substrate, a second film that gives tensile stress in the depth direction is formed on the first film, and film thicknesses of the first and second films are adjusted so that the compressive stress and the tensile stress are almost balanced.
摘要翻译：提供了一种半导体器件，其包括穿透半导体衬底的环形绝缘分离部分和在由环形绝缘分离部分包围的区域中穿透半导体衬底的电极，其中绝缘分离部分至少包括第一膜，其施加压缩在基板一侧的深度方向上的应力，在第一膜上形成在深度方向上产生拉伸应力的第二膜，并且调节第一和第二膜的膜厚度，使得压缩应力和拉伸应力几乎平衡。

4. 发明授权

US08178428B2 Manufacturing method of semiconductor device and substrate processing apparatus 有权
标题翻译：半导体器件和衬底处理设备的制造方法
公开(公告)号：US08178428B2
公开(公告)日：2012-05-15
申请号：US12656415
申请日：2010-01-28
申请人： Takaaki Noda , Jie Wang , Kazuaki Tonari , Satoru Sugiyama
发明人： Takaaki Noda , Jie Wang , Kazuaki Tonari , Satoru Sugiyama
IPC分类号： H01L21/20
CPC分类号： H01L21/02425 , C23C16/0272 , C23C16/24 , H01L21/0245 , H01L21/02532 , H01L21/02579 , H01L21/0262
摘要： A manufacturing method of a semiconductor device is provided, comprising: loading a substrate into a processing chamber; forming a first film on the substrate by supplying silicon atom-containing gas, boron atom-containing gas, and germanium atom-containing gas into the processing chamber; forming a second film on the first film by supplying the silicon atom-containing gas and the boron atom-containing gas into the processing chamber; and unloading the substrate from the processing chamber.
摘要翻译：提供一种半导体器件的制造方法，包括：将衬底装载到处理室中; 通过将含硅原子的气体，含硼原子的气体和含锗原子的气体供给到所述处理室中，在所述基板上形成第一膜; 通过将含硅原子的气体和含硼原子的气体供给到处理室中，在第一膜上形成第二膜; 并从处理室卸载基板。

5. 发明申请

US20100317174A1 Manufacturing method of semiconductor device and substrate processing apparatus 有权
标题翻译：半导体器件和衬底处理设备的制造方法
公开(公告)号：US20100317174A1
公开(公告)日：2010-12-16
申请号：US12656415
申请日：2010-01-28
申请人： Takaaki Noda , Jie Wang , Kazuaki Tonari , Satoru Sugiyama
发明人： Takaaki Noda , Jie Wang , Kazuaki Tonari , Satoru Sugiyama
IPC分类号： H01L21/205
CPC分类号： H01L21/02425 , C23C16/0272 , C23C16/24 , H01L21/0245 , H01L21/02532 , H01L21/02579 , H01L21/0262
摘要： A manufacturing method of a semiconductor device is provided, comprising: loading a substrate into a processing chamber; forming a first film on the substrate by supplying silicon atom-containing gas, boron atom-containing gas, and germanium atom-containing gas into the processing chamber; forming a second film on the first film by supplying the silicon atom-containing gas and the boron atom-containing gas into the processing chamber; and unloading the substrate from the processing chamber.
摘要翻译：提供一种半导体器件的制造方法，包括：将衬底装载到处理室中; 通过将含硅原子的气体，含硼原子的气体和含锗原子的气体供给到所述处理室中，在所述基板上形成第一膜; 通过将含硅原子的气体和含硼原子的气体供给到处理室中，在第一膜上形成第二膜; 并从处理室卸载基板。

6. 发明授权

US6166914A IC card having a reinforcing member for reinforcing a sealing member 失效
标题翻译： IC卡具有用于加强密封构件的加强构件
公开(公告)号：US6166914A
公开(公告)日：2000-12-26
申请号：US308382
申请日：1999-05-18
申请人： Satoru Sugiyama , Toyoji Kanazawa , Tetsuo Satoh , Mikio Yamaguchi , Masashi Takahashi
发明人： Satoru Sugiyama , Toyoji Kanazawa , Tetsuo Satoh , Mikio Yamaguchi , Masashi Takahashi
IPC分类号： B42D15/10 , G06K19/077 , H01L23/498 , H05K1/14 , H01L23/28
CPC分类号： G06K19/07747 , G06K19/07728 , G06K19/07745 , H01L23/49855 , H01L24/48 , H01L2224/48227 , H01L2224/48228 , H01L2224/48465 , H01L2924/00014 , H01L2924/14 , H01L2924/181 , H01L2924/3025 , H01L2924/00 , H01L2924/00012 , H01L2224/45015 , H01L2924/207 , H01L2224/45099 , H01L2224/05599 , H01L2224/85399
摘要： In an IC card in which an IC module constituted by a terminal plate 1 having a connection terminal pattern(3), arranged on a surface of an insulating substrate (2), for external power supply, signal connection, and grounding, an IC chip (4) mounted on the rear surface of the terminal plate 1 and electrically coupled to the connection terminal pattern (3), a sealing member (5) for the IC chip, and a reinforcing member (6) for reinforcing the sealing member (5) is mounted on a card base, the reinforcing member (6) consists of a conduction material, and integrally constituted by a ring portion (7) for covering the outer periphery of the sealing member (5) and a flange portion (8), having almost the same shape as that of the outer periphery of the terminal plate (1), for covering the rear surface of the insulating substrate (2). Therefore, an IC card which is strong to damage caused by disconnection of a bonding wire due to peeling between the insulating substrate and the sealing member caused by external force can be provided at low cost.
摘要翻译： PCT No.PCT / JP98 / 04668 Sec。 371日期1999年5月18日 102（e）日期1999年5月18日PCT提交1998年10月15日PCT公布。 WO99 / 21132 PCT出版物日期1999年4月29日在IC卡中，IC模块由具有连接端子图案（3）的端子板1构成，布置在绝缘基板（2）的表面上，用于外部电源，信号连接和接地，安装在端子板1的后表面并电耦合到连接端子图案（3）的IC芯片（4），用于IC芯片的密封构件（5）和用于增强的加强构件密封件（5）安装在卡座上，加强件（6）由导电材料构成，并由用于覆盖密封件（5）的外周的环形部分（7）和凸缘部分（8）具有与端子板（1）的外周几乎相同的形状，用于覆盖绝缘基板（2）的后表面。因此，可以以低成本提供由于由外力引起的绝缘基板和密封构件之间的剥离导致的由接合线断开引起的损坏的IC卡。

7. 发明申请

US20170128412A1 SYSTEM AND METHOD FOR IMPROVED BLOOD CIRCULATION AND MAINTAINING MITOCHONDRIAL ENERGY PRODUCTION 审中-公开
公开(公告)号：US20170128412A1
公开(公告)日：2017-05-11
申请号：US15235068
申请日：2016-08-11
申请人： Satoru Sugiyama , Takado Ishii , Takayuki Ozawa
发明人： Satoru Sugiyama , Takado Ishii , Takayuki Ozawa
IPC分类号： A61K31/355 , A61K47/18 , A61K47/26 , A61K9/00 , A61K9/08
CPC分类号： A61K31/355 , A61K9/0019 , A61K9/08 , A61K9/10 , A61K9/14 , A61K31/198 , A61K31/353 , A61K31/401 , A61K31/405 , A61K31/4172 , A61K47/183 , A61K47/26 , A61K2300/00
摘要： The disclosure relates to compositions, methods and systems for improving blood circulation and/or for the treatment of acute poor circulation of the liver, kidneys, heart, brain, and other organs utilizing highly concentrated tocotrienols/tocotrienol derivatives. The compositions, methods and systems of the disclosure may also be applicable in the treatment of chronic tissue hypoxemia, organ damage as a result of cell death, dementia, ulceration of the skin, and other such internal organ/brain/skin failure.

8. 发明申请

US20100184858A1 Hepatic fibrosis inhibitor 有权
标题翻译：肝纤维化抑制剂
公开(公告)号：US20100184858A1
公开(公告)日：2010-07-22
申请号：US12591982
申请日：2009-12-07
申请人： Naohisa Ishikawa , Satoru Sugiyama , Tokutaro Miki , Hiroshi Nishikawa
发明人： Naohisa Ishikawa , Satoru Sugiyama , Tokutaro Miki , Hiroshi Nishikawa
IPC分类号： A61K31/222 , A61K31/085 , A61P1/16
CPC分类号： A61K31/085 , A61K31/216
摘要： The progression of hepatic fibrosis and hepatic cirrhosis caused by various hepatic disorders and damages such as chronic hepatitis can be restrained by hepatic fibrosis inhibitor containing a compound represented by the following chemical formula: wherein, R1 represents an alkyl group with a carbon number of 4 to 8, and R2 represents a hydrogen atom, alkylcarbonyl group with a carbon number of 2 to 6, or alkoxycarbonyl group with a carbon number of 2 to 6.
摘要翻译：由各种肝病和慢性肝炎等损伤引起的肝纤维化和肝硬化的发展可以通过含有下列化学式表示的化合物的肝纤维化抑制剂来抑制：其中，R1表示碳原子数为4〜 8，R 2表示氢原子，碳数为2〜6的烷基羰基或碳数为2〜6的烷氧基羰基。

9. 发明申请

US20100160432A1 Curative drug for neurodegenerative diseases 审中-公开
标题翻译：神经退行性疾病治疗药物
公开(公告)号：US20100160432A1
公开(公告)日：2010-06-24
申请号：US12659070
申请日：2010-02-24
申请人： Satoru Sugiyama , Tokutaro Miki , Hiroshi Nishikawa
发明人： Satoru Sugiyama , Tokutaro Miki , Hiroshi Nishikawa
IPC分类号： A61K31/216 , A61K31/075 , A61P25/28
CPC分类号： A61K31/085 , A61K31/216 , A61K31/265
摘要： A compound is prepared based on Formula 1: wherein, R1 represents an alkyl group with a carbon number of 4 to 8, and R2 represents a hydrogen atom, alkylcarbonyl group with a carbon number of 2 to 6 or alkoxycarbonyl group with a carbon number of 2 to 6. A curative drug for neurodegenerative diseases can be prepared principally from the compound or a hydroquinone derivative consisting of a cyclodextrin inclusion compound thereof. The curative drug for neurodegenerative diseases has a safe and beneficial effect of inhibiting nerve cell disorder due to oxidative stress, thereby to stop progression of symptoms.
摘要翻译：基于式1制备化合物：其中，R1表示碳原子数为4〜8的烷基，R2表示氢原子，碳数为2〜6的烷基羰基或碳数为2的烷氧基羰基用于神经变性疾病的治疗药物主要由化合物或其环糊精包合物组成的氢醌衍生物制备。用于神经退行性疾病的治疗药物具有由于氧化应激而抑制神经细胞障碍的安全有益的作用，从而停止症状的进展。

10. 发明授权

US06333266B1 Manufacturing process for a semiconductor device 失效
标题翻译：一种半导体器件的制造工艺
公开(公告)号：US06333266B1
公开(公告)日：2001-12-25
申请号：US09264567
申请日：1999-03-08
申请人： Satoru Sugiyama
发明人： Satoru Sugiyama
IPC分类号： H01L2144
CPC分类号： C23C16/24 , H01L21/32105 , Y10S118/90 , Y10S438/905 , Y10S438/913 , Y10S438/958
摘要： This invention relates to a manufacturing process for a semiconductor device, comprising injecting a silane compound and a dopant into a low-pressure chemical vapor deposition reactor to deposit a doped silicon film on a wafer; and at the end of the deposition, injecting an oxidizing gas to form an oxide film over the silicon film deposited in the reactor. According to this invention, anomalous growth or generation of foreign matters such as particles during a deposition step can be effectively minimized to improve a production yield and provide a high-quality and highly reliable semiconductor device.
摘要翻译：本发明涉及一种用于半导体器件的制造方法，包括将硅烷化合物和掺杂剂注入到低压化学气相沉积反应器中，以将掺杂的硅膜沉积在晶片上; 并且在沉积结束时，注入氧化气体以在沉积在反应器中的硅膜上形成氧化膜。根据本发明，可以有效地最小化在沉积步骤期间异常生长或诸如颗粒的异物的产生，以提高生产产量并提供高质量和高可靠性的半导体器件。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式