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    • 5. 发明授权
    • Method for producing monosilane and tetraalkoxysilane
    • 单硅烷和四烷氧基硅烷的制备方法
    • US08829221B2
    • 2014-09-09
    • US13125606
    • 2009-10-30
    • Hiromoto OhnoToshio OhiHaruaki ItoFanil Makhmutov
    • Hiromoto OhnoToshio OhiHaruaki ItoFanil Makhmutov
    • C07C7/00
    • C07F7/045C01B33/00C01B33/04C01B33/043
    • The present invention relates to method for producing monosilane and tetraalkoxysilane comprising subjecting alkoxysilane represented by formula (1) HnSi(OR) 4-n  (1) wherein R represents alkyl group having 1 to 6 carbon atoms and n represents an integer of from 1 to 3, to dismutation reaction in a gaseous phase in the presence of a catalyst containing an alkali metal fluoride and a catalyst activator. The method can solve problems in a method for producing monosilane and tetraalkoxysilane by dismutation reaction of alkoxysilane in a liquid phase: i.e. problems such that separation from the solvent is difficult and that the reaction is too slow and not suitable for industrial production.
    • 本发明涉及制备单硅烷和四烷氧基硅烷的方法,其包括使由式(1)表示的烷氧基硅烷代表Hn​​Si(OR)4-n(1)表示的烷氧基硅烷,其中R表示具有1至6个碳原子的烷基,n表示1的整数, 3,在含有碱金属氟化物和催化剂活化剂的催化剂存在下,在气相中进行歧化反应。 该方法可以通过烷基硅烷在液相中的歧化反应来解决生产甲硅烷和四烷氧基硅烷的方法中的问题:即难以与溶剂分离的问题,并且反应太慢并且不适合于工业生产。