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1. 发明申请

US20080149965A1 TRANSISTOR AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：晶体管及其制造方法
公开(公告)号：US20080149965A1
公开(公告)日：2008-06-26
申请号：US11939899
申请日：2007-11-14
申请人： Kazuhiro KAIBARA , Masahiro HIKITA , Tetsuzo UEDA , Yasuhiro UEMOTO , Tsuyoshi TANAKA
发明人： Kazuhiro KAIBARA , Masahiro HIKITA , Tetsuzo UEDA , Yasuhiro UEMOTO , Tsuyoshi TANAKA
IPC分类号： H01L29/80 , H01L21/335
CPC分类号： H01L29/7787 , H01L29/1066 , H01L29/2003 , H01L29/41766 , H01L29/432
摘要： A transistor includes: a first semiconductor layer and a second semiconductor layer with a first region and a second region, which are sequentially formed above a substrate; a first p-type semiconductor layer formed on a region of the second semiconductor layer other than the first and second regions; and a second p-type semiconductor layer formed on the first p-type semiconductor layer. The first p-type semiconductor layer is separated from a drain electrode by interposing therebetween a first groove having a bottom composed of the first region, and from a source electrode by interposing therebetween a second groove having a bottom composed of the second region.
摘要翻译：晶体管包括：第一半导体层和具有第一区域和第二区域的第二半导体层，其顺序地形成在衬底上; 形成在除了第一和第二区域之外的第二半导体层的区域上的第一p型半导体层; 以及形成在第一p型半导体层上的第二p型半导体层。第一p型半导体层与漏电极分离，其间具有由第一区域构成的底部的第一沟槽和源极电极之间插入具有由第二区域构成的底部的第二沟槽。

2. 发明申请

US20110114967A1 NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20110114967A1
公开(公告)日：2011-05-19
申请号：US13010238
申请日：2011-01-20
申请人： Masahiro HIKITA , Tetsuzo UEDA , Manabu YANAGIHARA , Yasuhiro UEMOTO , Tsuyoshi TANAKA
发明人： Masahiro HIKITA , Tetsuzo UEDA , Manabu YANAGIHARA , Yasuhiro UEMOTO , Tsuyoshi TANAKA
IPC分类号： H01L29/205 , H01L29/78
CPC分类号： H01L29/7786 , H01L29/1066 , H01L29/2003 , H01L29/4175 , H01L29/432 , H01L29/66462
摘要： A nitride semiconductor device includes: a substrate; a first nitride semiconductor layer formed over the substrate; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a larger band gap energy than the first nitride semiconductor layer; a third nitride semiconductor layer formed on the second nitride semiconductor layer and including a p-type nitride semiconductor with at least a single-layer structure; a gate electrode formed on the third nitride semiconductor layer; and a source electrode and a drain electrode formed in regions located on both sides of the gate electrode, respectively. The third nitride semiconductor layer has a thickness greater in a portion below the gate electrode than in a portion below the side of the gate electrode.
摘要翻译：氮化物半导体器件包括：衬底; 形成在所述基板上的第一氮化物半导体层; 形成在所述第一氮化物半导体层上并且具有比所述第一氮化物半导体层更大的带隙能量的第二氮化物半导体层; 形成在所述第二氮化物半导体层上并且包括具有至少单层结构的p型氮化物半导体的第三氮化物半导体层; 形成在所述第三氮化物半导体层上的栅电极; 以及分别形成在位于栅电极两侧的区域中的源电极和漏电极。所述第三氮化物半导体层的厚度比所述栅极电极侧的部分的厚度大。

3. 发明申请

US20080067546A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20080067546A1
公开(公告)日：2008-03-20
申请号：US11898958
申请日：2007-09-18
申请人： Tomohiro MURATA , Hiroaki UENO , Hidetoshi ISHIDA , Tetsuzo UEDA , Yasuhiro UEMOTO , Tsuyoshi TANAKA , Daisuke UEDA
发明人： Tomohiro MURATA , Hiroaki UENO , Hidetoshi ISHIDA , Tetsuzo UEDA , Yasuhiro UEMOTO , Tsuyoshi TANAKA , Daisuke UEDA
IPC分类号： H01L29/20
CPC分类号： H01L29/7787 , H01L23/367 , H01L23/3677 , H01L29/2003 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes: a semiconductor layer; at least one electrode formed on a semiconductor layer to be in contact with the semiconductor layer; and a passivation film covering the semiconductor layer and at least part of the top surface of the electrode to protect the semiconductor layer and formed of a plurality of sub-films. The passivation film includes a first sub-film made of aluminum nitride.
摘要翻译：半导体器件包括：半导体层; 形成在与半导体层接触的半导体层上的至少一个电极; 以及覆盖半导体层和电极的顶表面的至少一部分的钝化膜，以保护半导体层并由多个子膜形成。钝化膜包括由氮化铝制成的第一子膜。

4. 发明申请

US20080179694A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080179694A1
公开(公告)日：2008-07-31
申请号：US12023461
申请日：2008-01-31
申请人： Kazushi NAKAZAWA , Satoshi NAKAZAWA , Tetsuzo UEDA , Tsuyoshi TANAKA , Masahiro HIKITA
发明人： Kazushi NAKAZAWA , Satoshi NAKAZAWA , Tetsuzo UEDA , Tsuyoshi TANAKA , Masahiro HIKITA
IPC分类号： H01L29/00 , H01L21/336
CPC分类号： H01L29/7787 , H01L29/1029 , H01L29/1066 , H01L29/2003 , H01L29/41766 , H01L29/42316 , H01L29/4236 , H01L29/66462
摘要： In FET, a second nitride semiconductor layer is provided on a first nitride semiconductor layer, and a source electrode and a drain electrode are each provided to have at least a portion thereof in contact with the second nitride semiconductor layer. A concave portion is formed in the upper surface of the second nitride semiconductor layer to be located between the source electrode and the drain electrode. A gate electrode is provided over the concave portion to cover the opening of the concave portion.
摘要翻译：在FET中，第二氮化物半导体层设置在第一氮化物半导体层上，并且源电极和漏电极分别设置成使其至少一部分与第二氮化物半导体层接触。在第二氮化物半导体层的上表面上形成凹部，位于源电极和漏电极之间。在所述凹部上设置有栅电极以覆盖所述凹部的开口。

5. 发明申请

US20110024797A1 NITRIDE-BASED SEMICONDUCTOR DEVICE WITH CONCAVE GATE REGION 审中-公开
标题翻译：基于氮化物的半导体器件，带有栅极区域
公开(公告)号：US20110024797A1
公开(公告)日：2011-02-03
申请号：US12903505
申请日：2010-10-13
申请人： Kazushi NAKAZAWA , Satoshi NAKAZAWA , Tetsuzo UEDA , Tsuyoshi TANAKA , Masahiro HIKITA
发明人： Kazushi NAKAZAWA , Satoshi NAKAZAWA , Tetsuzo UEDA , Tsuyoshi TANAKA , Masahiro HIKITA
IPC分类号： H01L29/778 , H01L29/772
CPC分类号： H01L29/7787 , H01L29/1029 , H01L29/1066 , H01L29/2003 , H01L29/41766 , H01L29/42316 , H01L29/4236 , H01L29/66462
摘要： In FET, a second nitride semiconductor layer is provided on a first nitride semiconductor layer, and a source electrode and a drain electrode are each provided to have at least a portion thereof in contact with the second nitride semiconductor layer. A concave portion is formed in the upper surface of the second nitride semiconductor layer to be located between the source electrode and the drain electrode. A gate electrode is provided over the concave portion to cover the opening of the concave portion.
摘要翻译：在FET中，第二氮化物半导体层设置在第一氮化物半导体层上，并且源电极和漏电极分别设置成使其至少一部分与第二氮化物半导体层接触。在第二氮化物半导体层的上表面上形成凹部，位于源电极和漏电极之间。在所述凹部上设置有栅电极以覆盖所述凹部的开口。

6. 发明申请

US20130009676A1 BIDIRECTIONAL SWITCHING DEVICE AND BIDIRECTIONAL SWITCHING CIRCUIT USING THE SAME 有权
标题翻译：双向切换装置和双向切换电路
公开(公告)号：US20130009676A1
公开(公告)日：2013-01-10
申请号：US13613724
申请日：2012-09-13
申请人： Tatsuo MORITA , Daisuke UEDA , Yasuhiro UEMOTO , Tetsuzo UEDA
发明人： Tatsuo MORITA , Daisuke UEDA , Yasuhiro UEMOTO , Tetsuzo UEDA
IPC分类号： H01L29/78 , H03K3/00
CPC分类号： H01L29/7787 , H01L27/0605 , H01L29/1066 , H01L29/2003
摘要： A bidirectional switching device includes a semiconductor multilayer structure made of a nitride semiconductor, a first ohmic electrode and a second ohmic electrode which are formed on the semiconductor multilayer structure, and a first gate electrode and a second gate electrode. The first gate electrode is covered with a first shield electrode having a potential substantially equal to that of the first ohmic electrode. The second gate electrode is covered with the second shield electrode having a potential substantially equal to that of the second ohmic electrode. An end of the first shield electrode is positioned between the first gate electrode and the second gate electrode, and an end of the second shield electrode is positioned between the second gate electrode and the first gate electrode.
摘要翻译：双向开关器件包括由半导体多层结构上形成的由氮化物半导体，第一欧姆电极和第二欧姆电极构成的半导体多层结构以及第一栅电极和第二栅电极。第一栅电极被第一屏蔽电极覆盖，该第一屏蔽电极的电位基本上等于第一欧姆电极的电位。第二栅电极被第二屏蔽电极覆盖，其电位基本上等于第二欧姆电极的电位。第一屏蔽电极的端部位于第一栅极电极和第二栅极电极之间，第二屏蔽电极的端部位于第二栅极电极和第一栅极电极之间。

7. 发明申请

US20110037100A1 NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20110037100A1
公开(公告)日：2011-02-17
申请号：US12912346
申请日：2010-10-26
申请人： Masahiro HIKITA , Tetsuzo UEDA
发明人： Masahiro HIKITA , Tetsuzo UEDA
IPC分类号： H01L29/737
CPC分类号： H01L29/2003 , H01L29/1066 , H01L29/42316 , H01L29/7786 , H01L29/808
摘要： A nitride semiconductor device includes: first through third nitride semiconductor layers formed in sequence over a substrate. The second nitride semiconductor layer has a band gap energy larger than that of the first nitride semiconductor layer. The third nitride semiconductor layer has an opening. A p-type fourth nitride semiconductor layer is formed so that the opening is filled therewith. A gate electrode is formed on the fourth nitride semiconductor layer.
摘要翻译：氮化物半导体器件包括：顺序地在衬底上形成的第一至第三氮化物半导体层。第二氮化物半导体层的带隙能量大于第一氮化物半导体层的带隙能量。第三氮化物半导体层具有开口。形成p型第四氮化物半导体层，使得开口被填充。在第四氮化物半导体层上形成栅电极。

8. 发明申请

US20110272740A1 FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US20110272740A1
公开(公告)日：2011-11-10
申请号：US13185818
申请日：2011-07-19
申请人： Hidekazu UMEDA , Masahiro HIKITA , Tetsuzo UEDA
发明人： Hidekazu UMEDA , Masahiro HIKITA , Tetsuzo UEDA
IPC分类号： H01L29/80 , H01L21/335
CPC分类号： H01L29/7783 , H01L29/1066 , H01L29/2003 , H01L29/66462 , H01L29/7787
摘要： A field-effect transistor includes a first semiconductor layer formed on a substrate, and a second semiconductor layer. The first semiconductor layer has a containing region provided as an isolation region which contains non-conductive impurities, and a non-containing region which contains no non-conductive impurities. A first region is defined by a vicinity of a portion of the interface between the containing region and the non-containing region, the portion of the interface being below a gate electrode, the vicinity including the portion of the interface and being included in the containing region. The second semiconductor layer includes a second region which is located directly above the first region. The concentration of the non-conductive impurities of the second region is lower than that of the first region.
摘要翻译：场效应晶体管包括形成在衬底上的第一半导体层和第二半导体层。第一半导体层具有设置为包含非导电杂质的隔离区域的含有区域和不含非导电杂质的非含有区域。第一区域由容纳区域和非含有区域之间的界面的一部分的附近限定，界面的部分在栅电极下方，包括界面部分的附近包含在包含地区。第二半导体层包括位于第一区域正上方的第二区域。第二区域的非导电杂质的浓度低于第一区域的浓度。

9. 发明申请

US20110227093A1 FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US20110227093A1
公开(公告)日：2011-09-22
申请号：US13150574
申请日：2011-06-01
申请人： Masahiro HIKITA , Hidetoshi ISHIDA , Tetsuzo UEDA
发明人： Masahiro HIKITA , Hidetoshi ISHIDA , Tetsuzo UEDA
IPC分类号： H01L29/20 , H01L21/337 , H01L29/808
CPC分类号： H01L29/7786 , H01L29/1066 , H01L29/2003 , H01L29/205 , H01L29/41766 , H01L29/66462 , H01L29/808
摘要： The present invention has an object to provide an FET and a method of manufacturing the FET that are capable of increasing the threshold voltage as well as decreasing the on-resistance. The FET of the present invention includes a first undoped GaN layer; a first undoped AlGaN layer formed on the first undoped GaN layer, having a band gap energy greater than that of the first undoped GaN layer; a second undoped GaN layer formed on the first undoped AlGaN layer; a second undoped AlGaN layer formed on the second undoped GaN layer, having a band gap energy greater than that of the second undoped GaN layer; a p-type GaN layer formed in the recess of the second undoped AlGaN layer; a gate electrode formed on the p-type GaN layer; and a source electrode and a drain electrode which are formed in both lateral regions of the gate electrode, wherein a channel is formed at the heterojunction interface between the first undoped GaN layer and the first undoped AlGaN layer.
摘要翻译：本发明的目的是提供一种能够增加阈值电压以及降低导通电阻的FET和FET的制造方法。本发明的FET包括第一未掺杂的GaN层; 形成在第一未掺杂的GaN层上的第一未掺杂的AlGaN层，其带隙能量大于第一未掺杂的GaN层的带隙能量; 形成在第一未掺杂的AlGaN层上的第二未掺杂的GaN层; 形成在所述第二未掺杂GaN层上的第二未掺杂AlGaN层，具有大于所述第二未掺杂GaN层的带隙能量的带隙能量; 形成在第二未掺杂AlGaN层的凹部中的p型GaN层; 形成在p型GaN层上的栅电极; 以及形成在所述栅电极的两个横向区域中的源电极和漏电极，其中在所述第一未掺杂的GaN层和所述第一未掺杂的AlGaN层之间的异质结界面处形成沟道。

10. 发明申请

US20090078943A1 NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20090078943A1
公开(公告)日：2009-03-26
申请号：US12233011
申请日：2008-09-18
申请人： Hidetoshi ISHIDA , Tetsuzo UEDA , Daisuke UEDA
发明人： Hidetoshi ISHIDA , Tetsuzo UEDA , Daisuke UEDA
IPC分类号： H01L29/15 , H01L21/00
CPC分类号： H01L21/84 , H01L27/12 , H01L29/2003 , H01L29/78681
摘要： A nitride semiconductor device mainly made of a nitride semiconductor material having excellent heat dissipation characteristics and great crystallinity and a method for manufacturing thereof are provided. The method for manufacturing the nitride semiconductor includes vapor-depositing a diamond layer on a silicon substrate, bonding an SOI substrate on a surface of the diamond layer, thinning the SOI substrate, epitaxially growing an GaN layer on the thinned SOI substrate, removing the silicon substrate, and bonding, on a rear-surface of the diamond layer, a material having a thermal conductivity greater than a thermal conductivity of the silicon substrate. The SOI substrate has an outermost surface layer and a silicon oxide layer. In the thinning, the SOI substrate is thinned by selectively removed through the silicon oxide layer, so that only the outermost surface layer is left.
摘要翻译：提供了主要由具有优异散热特性和高结晶度的氮化物半导体材料制成的氮化物半导体器件及其制造方法。制造氮化物半导体的方法包括在硅衬底上气相沉积金刚石层，将SOI衬底粘合在金刚石层的表面上，使SOI衬底变薄，在薄化SOI衬底上外延生长GaN层，除去硅衬底和接合在金刚石层的后表面上，具有大于硅衬底的热导率的导热率的材料。 SOI衬底具有最外表面层和氧化硅层。在薄化中，SOI衬底通过选择性地通过氧化硅层去除而变薄，使得仅留下最外表面层。

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