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1. 发明申请

US20110233712A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110233712A1
公开(公告)日：2011-09-29
申请号：US13156078
申请日：2011-06-08
申请人： Tomohiro Murata , Yutaka Hirose , Yasuhiro Uemoto , Tsuyoshi Tanaka
发明人： Tomohiro Murata , Yutaka Hirose , Yasuhiro Uemoto , Tsuyoshi Tanaka
IPC分类号： H01L29/47
CPC分类号： H01L29/7786 , H01L29/2003 , H01L29/66462
摘要： According to a method for fabricating a semiconductor device, a first semiconductor layer made of a first nitride semiconductor is formed over a substrate. Thereafter, a mask film covering part of the upper surface of the first semiconductor layer is selectively formed on the first semiconductor layer. A multilayer film, in which second and third nitride semiconductors having different band gaps are stacked, is selectively formed on the first semiconductor layer with the mask film used as a formation mask. On the multilayer film, an ohmic electrode is formed.
摘要翻译：根据半导体器件的制造方法，在基板上形成由第一氮化物半导体构成的第一半导体层。此后，在第一半导体层上选择性地形成覆盖第一半导体层的上表面的一部分的掩模膜。选择性地在第一半导体层上形成具有不同带隙的第二和第三氮化物半导体的多层膜，其中掩模膜用作形成掩模。在多层膜上形成欧姆电极。

2. 发明申请

US20100207165A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100207165A1
公开(公告)日：2010-08-19
申请号：US12769108
申请日：2010-04-28
申请人： Tomohiro MURATA , Yutaka Hirose , Yasuhiro Uemoto , Tsuyoshi Tanaka
发明人： Tomohiro MURATA , Yutaka Hirose , Yasuhiro Uemoto , Tsuyoshi Tanaka
IPC分类号： H01L29/812
CPC分类号： H01L29/7786 , H01L29/2003 , H01L29/66462
摘要： According to a method for fabricating a semiconductor device, a first semiconductor layer made of a first nitride semiconductor is formed over a substrate. Thereafter, a mask film covering part of the upper surface of the first semiconductor layer is selectively formed on the first semiconductor layer. A multilayer film, in which second and third nitride semiconductors having different band gaps are stacked, is selectively formed on the first semiconductor layer with the mask film used as a formation mask. On the multilayer film, an ohmic electrode is formed.
摘要翻译：根据半导体器件的制造方法，在基板上形成由第一氮化物半导体构成的第一半导体层。此后，在第一半导体层上选择性地形成覆盖第一半导体层的上表面的一部分的掩模膜。选择性地在第一半导体层上形成具有不同带隙的第二和第三氮化物半导体的多层膜，其中掩模膜用作形成掩模。在多层膜上形成欧姆电极。

3. 发明申请

US20100129992A1 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20100129992A1
公开(公告)日：2010-05-27
申请号：US12695759
申请日：2010-01-28
申请人： Tomohiro MURATA , Yutaka Hirose , Tsuyoshi Tanaka , Yasuhiro Uemoto
发明人： Tomohiro MURATA , Yutaka Hirose , Tsuyoshi Tanaka , Yasuhiro Uemoto
IPC分类号： H01L21/20
CPC分类号： H01L29/66871 , H01L21/28 , H01L29/2003 , H01L29/42316 , H01L29/66462 , H01L29/7787 , H01L29/8128
摘要： A semiconductor device of the present invention includes: a III-V nitride semiconductor layer including a channel region in which carriers travel; a concave portion provided in an upper portion of the channel region in the III-V nitride semiconductor layer; and a Schottky electrode consisting of a conductive material forming a Schottky junction with the semiconductor layer, and formed on a semiconductor layer, which spreads over the concave portion and peripheral portions of the concave portion, on the III-V nitride semiconductor layer. A dimension of the concave portion in a depth direction is set so that a portion of the Schottky electrode provided in the concave portion can adjust a quantity of the carriers traveling in the channel region.
摘要翻译：本发明的半导体器件包括：III-V族氮化物半导体层，其包括载流子行进的沟道区; 设置在III-V族氮化物半导体层中的沟道区的上部的凹部; 和由形成与半导体层形成肖特基结的导电材料构成的肖特基电极，形成在III-V族氮化物半导体层上的在凹部的凹部和周边部分上方扩散的半导体层上。深度方向上的凹部的尺寸被设定为使得设置在凹部中的肖特基电极的一部分可以调节在沟道区域中行进的载流子的量。

4. 发明授权

US07656010B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07656010B2
公开(公告)日：2010-02-02
申请号：US11898958
申请日：2007-09-18
申请人： Tomohiro Murata , Hiroaki Ueno , Hidetoshi Ishida , Tetsuzo Ueda , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Tomohiro Murata , Hiroaki Ueno , Hidetoshi Ishida , Tetsuzo Ueda , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H01L23/58
CPC分类号： H01L29/7787 , H01L23/367 , H01L23/3677 , H01L29/2003 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes: a semiconductor layer; at least one electrode formed on a semiconductor layer to be in contact with the semiconductor layer; and a passivation film covering the semiconductor layer and at least part of the top surface of the electrode to protect the semiconductor layer and formed of a plurality of sub-films. The passivation film includes a first sub-film made of aluminum nitride.
摘要翻译：半导体器件包括：半导体层; 形成在与半导体层接触的半导体层上的至少一个电极; 以及覆盖半导体层和电极的顶表面的至少一部分的钝化膜，以保护半导体层并由多个子膜形成。钝化膜包括由氮化铝制成的第一子膜。

5. 发明授权

US07479651B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07479651B2
公开(公告)日：2009-01-20
申请号：US11293144
申请日：2005-12-05
申请人： Tomohiro Murata , Yutaka Hirose , Tsuyoshi Tanaka
发明人： Tomohiro Murata , Yutaka Hirose , Tsuyoshi Tanaka
IPC分类号： H01L29/06
CPC分类号： H01L29/155 , H01L29/2003 , H01L29/66462 , H01L29/7787
摘要： A semiconductor device comprises an active layer formed on a substrate, a superlattice layer formed on the active layer, and an ohmic electrode formed on the superlattice layer. In the superlattice layer, a first thin film and a second thin film are alternately laminated. The second thin film is made of a semiconductor which has polarization characteristics different from those of the first thin film and a band gap larger than that of the first thin film. An interface region between an upper surface of the first thin film and a lower surface of the second thin film or an interface region between a lower surface of the first thin film and an upper surface of the second thin film, is doped with an impurity.
摘要翻译：半导体器件包括形成在衬底上的有源层，形成在有源层上的超晶格层和形成在超晶格层上的欧姆电极。在超晶格层中交替层叠第一薄膜和第二薄膜。第二薄膜由具有与第一薄膜不同的偏振特性和比第一薄膜的带隙大的带隙的半导体制成。在第一薄膜的上表面和第二薄膜的下表面之间或第一薄膜的下表面与第二薄膜的上表面之间的界面区域之间的界面区域掺杂有杂质。

6. 发明申请

US20070176204A1 Field effect transistor 审中-公开
标题翻译：场效应晶体管
公开(公告)号：US20070176204A1
公开(公告)日：2007-08-02
申请号：US11699426
申请日：2007-01-30
申请人： Tomohiro Murata , Hidetoshi Ishida
发明人： Tomohiro Murata , Hidetoshi Ishida
IPC分类号： H01L29/15 , H01L31/00 , H01L29/739
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/7843
摘要： A field effect transistor includes a first semiconductor layer made of a first group III-V nitride; a second semiconductor layer formed on the first semiconductor layer, made of a second group III-V nitride and having a gate recess portion for exposing the first semiconductor layer therein; and a gate electrode formed on the first semiconductor layer in the gate recess portion. A product of stress applied by the second semiconductor layer to the first semiconductor layer and the thickness of the second semiconductor layer is 0.1 N/cm or less.
摘要翻译：场效应晶体管包括由第一III-V族氮化物构成的第一半导体层; 形成在第一半导体层上的第二半导体层，由第二组III-V族氮化物制成，并具有用于在其中暴露第一半导体层的栅极凹部; 以及形成在所述栅极凹部中的所述第一半导体层上的栅电极。由第二半导体层施加到第一半导体层的应力的产物和第二半导体层的厚度为0.1N / cm以下。

7. 发明授权

US5590272A Method and system for a high-reliable disk system 失效
标题翻译：高可靠磁盘系统的方法和系统
公开(公告)号：US5590272A
公开(公告)日：1996-12-31
申请号：US993394
申请日：1992-12-21
申请人： Tomohiro Murata , Kenzo Kurihara , Kazuhiro Kawashima , Mitsuaki Niida
发明人： Tomohiro Murata , Kenzo Kurihara , Kazuhiro Kawashima , Mitsuaki Niida
IPC分类号： G06F3/06 , G06F11/20 , G06F11/267 , G11C29/00 , G06F11/00
CPC分类号： G06F11/1662 , G06F11/2221 , G06F11/2089 , G06F11/2094 , G11C29/74
摘要： A disk controller itself performs the serial inspection process in the following way. It divides a track into a current track group directly available for an external computer and a spare track group available for the disk controller independently of the external computer before registering the groups in it. It also automatically selects a track available in the spare track group as an alternative track. It further copies to the alternative track data recorded on a current track to be inspected. In turn, the disk controller writes a test pattern on the current track. With this, it detects a defect position on a surface of a recording medium of the current track. It also registers the defect position detected on the surface of the recording medium to the current track. It further copies the data having been copied on the alternative track to the current track.
摘要翻译：磁盘控制器本身以下列方式执行串行检查过程。它将轨道分成直接可用于外部计算机的当前轨道组，以及可以独立于外部计算机的磁盘控制器可用的备用磁道组，然后在其中注册组。它还自动选择备用磁道组中可用的磁道作为备用磁道。它进一步复制到要检查的当前轨道上记录的备选轨道数据。反过来，磁盘控制器在当前磁道上写入测试图案。由此，它检测当前轨道的记录介质的表面上的缺陷位置。它还将在记录介质表面上检测到的缺陷位置注册到当前轨道。它还将已经在备选轨道上复制的数据复制到当前轨道。

8. 发明授权

US5404487A Disc access control method for cache-embedded disc control apparatus with function-degradation capability of data transmission path 失效
标题翻译：具有数据传输路径功能降级能力的高速缓存嵌入式盘片控制装置的光盘访问控制方法
公开(公告)号：US5404487A
公开(公告)日：1995-04-04
申请号：US89633
申请日：1993-07-12
申请人： Tomohiro Murata , Masaharu Akatsu , Kenzo Kurihara , Yoshiaki Kuwahara , Shigeo Honma
发明人： Tomohiro Murata , Masaharu Akatsu , Kenzo Kurihara , Yoshiaki Kuwahara , Shigeo Honma
IPC分类号： G06F3/06 , G06F12/08 , G06F13/14
CPC分类号： G06F12/0866 , G06F2212/312
摘要： A disc controller, which is connected to a plurality of channels for supplying access requests and discs. The controller includes a plurality of storage paths which control transfer of data between a cache, the channels and the discs, and a control memory which controls the respective operations of the plurality of storage paths. The control memory stores information which is used to select a storage path in accordance with predetermined standards for storage path selection. A disc or the cache is accessed using the selected storage path.
摘要翻译：盘控制器，其连接到用于提供访问请求和盘的多个信道。控制器包括控制高速缓存，通道和盘之间的数据传输的多个存储路径以及控制多个存储路径的相应操作的控制存储器。控制存储器存储用于根据用于存储路径选择的预定标准来选择存储路径的信息。使用所选存储路径访问光盘或缓存。

9. 发明授权

US07910464B2 Method for manufacturing a semiconductor device having a III-V nitride semiconductor 有权
标题翻译：具有III-V族氮化物半导体的半导体器件的制造方法
公开(公告)号：US07910464B2
公开(公告)日：2011-03-22
申请号：US12695759
申请日：2010-01-28
申请人： Tomohiro Murata , Yutaka Hirose , Tsuyoshi Tanaka , Yasuhiro Uemoto
发明人： Tomohiro Murata , Yutaka Hirose , Tsuyoshi Tanaka , Yasuhiro Uemoto
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L29/66871 , H01L21/28 , H01L29/2003 , H01L29/42316 , H01L29/66462 , H01L29/7787 , H01L29/8128
摘要： A semiconductor device of the present invention includes: a III-V nitride semiconductor layer including a channel region in which carriers travel; a concave portion provided in an upper portion of the channel region in the III-V nitride semiconductor layer; and a Schottky electrode consisting of a conductive material forming a Schottky junction with the semiconductor layer, and formed on a semiconductor layer, which spreads over the concave portion and peripheral portions of the concave portion, on the III-V nitride semiconductor layer. A dimension of the concave portion in a depth direction is set so that a portion of the Schottky electrode provided in the concave portion can adjust a quantity of the carriers traveling in the channel region.
摘要翻译：本发明的半导体器件包括：III-V族氮化物半导体层，其包括载流子行进的沟道区; 设置在III-V族氮化物半导体层中的沟道区的上部的凹部; 和由形成与半导体层形成肖特基结的导电材料构成的肖特基电极，形成在III-V族氮化物半导体层上的在凹部的凹部和周边部分上方扩散的半导体层上。深度方向上的凹部的尺寸被设定为使得设置在凹部中的肖特基电极的一部分可以调节在沟道区域中行进的载流子的量。

10. 发明授权

US07859087B2 Semiconductor device 有权
公开(公告)号：US07859087B2
公开(公告)日：2010-12-28
申请号：US12637240
申请日：2009-12-14
申请人： Tomohiro Murata , Hiroaki Ueno , Hidetoshi Ishida , Tetsuzo Ueda , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Tomohiro Murata , Hiroaki Ueno , Hidetoshi Ishida , Tetsuzo Ueda , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H01L23/58
CPC分类号： H01L29/7787 , H01L23/367 , H01L23/3677 , H01L29/2003 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes: a semiconductor layer; at least one electrode formed on a semiconductor layer to be in contact with the semiconductor layer; and a passivation film covering the semiconductor layer and at least part of the top surface of the electrode to protect the semiconductor layer and formed of a plurality of sub-films. The passivation film includes a first sub-film made of aluminum nitride.

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