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1. 发明申请

US20130009676A1 BIDIRECTIONAL SWITCHING DEVICE AND BIDIRECTIONAL SWITCHING CIRCUIT USING THE SAME 有权
标题翻译：双向切换装置和双向切换电路
公开(公告)号：US20130009676A1
公开(公告)日：2013-01-10
申请号：US13613724
申请日：2012-09-13
申请人： Tatsuo MORITA , Daisuke UEDA , Yasuhiro UEMOTO , Tetsuzo UEDA
发明人： Tatsuo MORITA , Daisuke UEDA , Yasuhiro UEMOTO , Tetsuzo UEDA
IPC分类号： H01L29/78 , H03K3/00
CPC分类号： H01L29/7787 , H01L27/0605 , H01L29/1066 , H01L29/2003
摘要： A bidirectional switching device includes a semiconductor multilayer structure made of a nitride semiconductor, a first ohmic electrode and a second ohmic electrode which are formed on the semiconductor multilayer structure, and a first gate electrode and a second gate electrode. The first gate electrode is covered with a first shield electrode having a potential substantially equal to that of the first ohmic electrode. The second gate electrode is covered with the second shield electrode having a potential substantially equal to that of the second ohmic electrode. An end of the first shield electrode is positioned between the first gate electrode and the second gate electrode, and an end of the second shield electrode is positioned between the second gate electrode and the first gate electrode.
摘要翻译：双向开关器件包括由半导体多层结构上形成的由氮化物半导体，第一欧姆电极和第二欧姆电极构成的半导体多层结构以及第一栅电极和第二栅电极。第一栅电极被第一屏蔽电极覆盖，该第一屏蔽电极的电位基本上等于第一欧姆电极的电位。第二栅电极被第二屏蔽电极覆盖，其电位基本上等于第二欧姆电极的电位。第一屏蔽电极的端部位于第一栅极电极和第二栅极电极之间，第二屏蔽电极的端部位于第二栅极电极和第一栅极电极之间。

2. 发明申请

US20080067546A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20080067546A1
公开(公告)日：2008-03-20
申请号：US11898958
申请日：2007-09-18
申请人： Tomohiro MURATA , Hiroaki UENO , Hidetoshi ISHIDA , Tetsuzo UEDA , Yasuhiro UEMOTO , Tsuyoshi TANAKA , Daisuke UEDA
发明人： Tomohiro MURATA , Hiroaki UENO , Hidetoshi ISHIDA , Tetsuzo UEDA , Yasuhiro UEMOTO , Tsuyoshi TANAKA , Daisuke UEDA
IPC分类号： H01L29/20
CPC分类号： H01L29/7787 , H01L23/367 , H01L23/3677 , H01L29/2003 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes: a semiconductor layer; at least one electrode formed on a semiconductor layer to be in contact with the semiconductor layer; and a passivation film covering the semiconductor layer and at least part of the top surface of the electrode to protect the semiconductor layer and formed of a plurality of sub-films. The passivation film includes a first sub-film made of aluminum nitride.
摘要翻译：半导体器件包括：半导体层; 形成在与半导体层接触的半导体层上的至少一个电极; 以及覆盖半导体层和电极的顶表面的至少一部分的钝化膜，以保护半导体层并由多个子膜形成。钝化膜包括由氮化铝制成的第一子膜。

3. 发明申请

US20090078943A1 NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20090078943A1
公开(公告)日：2009-03-26
申请号：US12233011
申请日：2008-09-18
申请人： Hidetoshi ISHIDA , Tetsuzo UEDA , Daisuke UEDA
发明人： Hidetoshi ISHIDA , Tetsuzo UEDA , Daisuke UEDA
IPC分类号： H01L29/15 , H01L21/00
CPC分类号： H01L21/84 , H01L27/12 , H01L29/2003 , H01L29/78681
摘要： A nitride semiconductor device mainly made of a nitride semiconductor material having excellent heat dissipation characteristics and great crystallinity and a method for manufacturing thereof are provided. The method for manufacturing the nitride semiconductor includes vapor-depositing a diamond layer on a silicon substrate, bonding an SOI substrate on a surface of the diamond layer, thinning the SOI substrate, epitaxially growing an GaN layer on the thinned SOI substrate, removing the silicon substrate, and bonding, on a rear-surface of the diamond layer, a material having a thermal conductivity greater than a thermal conductivity of the silicon substrate. The SOI substrate has an outermost surface layer and a silicon oxide layer. In the thinning, the SOI substrate is thinned by selectively removed through the silicon oxide layer, so that only the outermost surface layer is left.
摘要翻译：提供了主要由具有优异散热特性和高结晶度的氮化物半导体材料制成的氮化物半导体器件及其制造方法。制造氮化物半导体的方法包括在硅衬底上气相沉积金刚石层，将SOI衬底粘合在金刚石层的表面上，使SOI衬底变薄，在薄化SOI衬底上外延生长GaN层，除去硅衬底和接合在金刚石层的后表面上，具有大于硅衬底的热导率的导热率的材料。 SOI衬底具有最外表面层和氧化硅层。在薄化中，SOI衬底通过选择性地通过氧化硅层去除而变薄，使得仅留下最外表面层。

4. 发明申请

US20080112448A1 Nitride semiconductor laser diode 有权
标题翻译：氮化物半导体激光二极管
公开(公告)号：US20080112448A1
公开(公告)日：2008-05-15
申请号：US11979877
申请日：2007-11-09
申请人： Tetsuzo UEDA , Daisuke UEDA
发明人： Tetsuzo UEDA , Daisuke UEDA
IPC分类号： H01S5/323
CPC分类号： H01S5/32341 , H01S5/021 , H01S5/2201
摘要： A nitride semiconductor laser diode includes: a substrate made of silicon in which a plane orientation of a principal surface is a {100} plane; and a semiconductor that includes a plurality of semiconductor layers formed on the substrate and including an active layer, each of the plurality of semiconductor layers being made of group III nitride. The semiconductor has a plane parallel to a {011} plane which is a plane orientation of silicon as a cleaved facet, the cleaved facet forming a facet mirror.
摘要翻译：氮化物半导体激光二极管包括：由主表面的平面取向为{100}面的由硅制成的衬底; 以及半导体，其包括形成在所述基板上并包括有源层的多个半导体层，所述多个半导体层中的每一个由III族氮化物制成。半导体具有平行于{011}平面的平面，该平面是作为切割面的硅的平面取向，切割面形成小平面镜。

5. 发明申请

US20090289410A1 SHEET FEEDING APPARATUS AND IMAGE FORMING APPARATUS PROVIDED WITH SHEET FEEDING APPARATUS 有权
标题翻译：纸张送料装置和图像成型装置用纸送料装置
公开(公告)号：US20090289410A1
公开(公告)日：2009-11-26
申请号：US12466507
申请日：2009-05-15
申请人： Daisuke UEDA , Akira Kosugi
发明人： Daisuke UEDA , Akira Kosugi
IPC分类号： B65H3/08
CPC分类号： B65H1/14 , B65H3/128 , B65H3/48 , B65H2405/312 , B65H2405/313 , B65H2405/332 , B65H2406/352
摘要： A sheet feeding apparatus is provided with a sheet feeding device 60, a first air blow device 40 to blow air towards a side edge of a sheet bundle and a sheet side regulation member 71. The sheet side edge regulation member is provided with an air outlet 72 to blow air towards the side edge of the sheet bundle and an exhaust outlet 73 to exhaust air accumulated between a sheet separated from the sheet bundle and the sheet bundle.
摘要翻译：片材进给装置设置有片材进给装置60，朝向片材束的侧边缘吹送空气的第一吹气装置40和片材侧调节构件71.片材侧边缘调节构件设置有空气出口 72朝向纸张束的侧边缘吹气，排出口73排出积聚在与纸张束分离的纸张之间的空气。

6. 发明申请

US20090245043A1 OPTICAL RECORDING/REPRODUCING APPARATUS AND OPTICAL RECORDING/REPRODUCING METHOD 失效
标题翻译：光学记录/再现设备和光学记录/再现方法
公开(公告)号：US20090245043A1
公开(公告)日：2009-10-01
申请号：US12362827
申请日：2009-01-30
申请人： Daisuke UEDA
发明人： Daisuke UEDA
IPC分类号： G11B7/00
CPC分类号： G11B7/1275 , G11B7/1263
摘要： Disclosed is an optical recording/reproducing apparatus. The optical recording/reproducing apparatus includes a laser light source capable of emitting pulsed laser light in a mode-locked state in which light beams having different wavelengths are synchronized and the pulsed laser light is oscillated, means for controlling the laser light source to be changed from a state of emitting the laser light in the mode-locked state to a state of emitting continuous-wave laser light, and means for irradiating a recording medium with one of the laser light in the mode-locked state and the continuous-wave laser light.
摘要翻译：公开了一种光学记录/再现装置。该光学记录/再现装置包括能够发射脉冲激光的激光光源，该激光光源处于模式锁定状态，其中具有不同波长的光束同步并且脉冲激光被振荡，用于控制激光光源被改变的装置从将模式锁定状态的激光发射到发射连续波激光的状态的状态，以及用于向处于锁定状态的激光中的一个照射记录介质和连续波激光的装置光。

7. 发明申请

US20080303058A1 SOLID STATE IMAGING DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US20080303058A1
公开(公告)日：2008-12-11
申请号：US12035340
申请日：2008-02-21
申请人： Mitsuyoshi MORI , Toru OKINO , Daisuke UEDA , Toshinobu MATSUNO
发明人： Mitsuyoshi MORI , Toru OKINO , Daisuke UEDA , Toshinobu MATSUNO
IPC分类号： H01L31/0336 , H01L21/329
CPC分类号： H01L27/14689 , H01L27/14632 , H01L27/14645 , H01L27/14687
摘要： A solid state imaging device includes a pixel having a photoelectric conversion element formed on a semiconductor substrate. The photoelectric conversion element includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type formed on the first semiconductor layer and forming a junction therebetween; a third semiconductor layer formed on the second semiconductor layer and having a smaller band gap energy than the second semiconductor layer, the third semiconductor layer being made of a single-crystal semiconductor and containing an impurity; and a fourth semiconductor layer of the first conductivity type covering a side surface and an upper surface of the third semiconductor layer. Provision of the fourth semiconductor layer can reduce a current flowing in dark conditions.
摘要翻译：固态成像装置包括具有形成在半导体基板上的光电转换元件的像素。光电转换元件包括：第一导电类型的第一半导体层; 第二导电类型的第二半导体层，形成在第一半导体层上并在其间形成接合部; 形成在所述第二半导体层上并且具有比所述第二半导体层更小的带隙能量的第三半导体层，所述第三半导体层由单晶半导体制成并且含有杂质; 以及覆盖第三半导体层的侧表面和上表面的第一导电类型的第四半导体层。提供第四半导体层可以减少在黑暗条件下流动的电流。

8. 发明申请

US20080112444A1 LASER DEVICE AND LASER MODULE 审中-公开
标题翻译：激光器件和激光模块
公开(公告)号：US20080112444A1
公开(公告)日：2008-05-15
申请号：US11965315
申请日：2007-12-27
申请人： Kenichi INOUE , Kazuhiko YAMANAKA , Kazutoshi ONOZAWA , Daisuke UEDA
发明人： Kenichi INOUE , Kazuhiko YAMANAKA , Kazutoshi ONOZAWA , Daisuke UEDA
IPC分类号： H01S3/10
CPC分类号： H01S5/02292 , H01S5/005 , H01S5/0071 , H01S5/02248 , H01S5/4012 , H01S5/4087
摘要： A laser module includes a substrate 1, a first laser element 2 placed on the substrate 1, a second laser element 3 placed with an output surface opposed to the first laser element 2 on the substrate 1, and a mirror 7 placed between the first laser element 2 and the second laser element 3. The mirror 7 has a reflective surface capable of reflecting output light from the first laser element 2 or the second laser element 3 in a predetermined direction, and is placed so as to move or rotate between a first position capable of reflecting the output light from the first laser element 2 and a second position capable of reflecting the output light from the second laser element 3. Thus, a laser module can be provided in which high precision, low cost, and miniaturization can be realized.
摘要翻译：激光模块包括基板1，放置在基板1上的第一激光元件2，在基板1上设置有与第一激光元件2相对的输出面的第二激光元件3，以及配置在第一激光器元件2和第二激光元件3。反射镜7具有反射表面，该反射表面能够沿着预定方向反射来自第一激光元件2或第二激光元件3的输出光，并且能够在能够反射来自第一激光元件2或第二激光元件3的输出光的第一位置之间移动或旋转第一激光元件2和能够反射来自第二激光元件3的输出光的第二位置。因此，可以提供可以实现高精度，低成本和小型化的激光模块。

9. 发明申请

US20070278521A1 TRANSISTOR 有权
标题翻译：晶体管
公开(公告)号：US20070278521A1
公开(公告)日：2007-12-06
申请号：US11758304
申请日：2007-06-05
申请人： Hidetoshi ISHIDA , Tsuyoshi TANAKA , Daisuke UEDA
发明人： Hidetoshi ISHIDA , Tsuyoshi TANAKA , Daisuke UEDA
IPC分类号： H01L31/00
CPC分类号： H01L29/7787 , H01L29/045 , H01L29/0891 , H01L29/1066 , H01L29/2003 , H01L29/432 , H01L29/452
摘要： There is provided a normally-off type transistor made of a nitride semiconductor. The transistor includes: an undoped GaN layer which forms a channel region; an undoped Al0.2Ga0.8N layer which is formed on the undoped GaN layer and has a band gap larger than that of the undoped GaN layer; a p-type Al0.2Ga0.8N control layer which is formed on the undoped Al0.2Ga0.8N layer, has a p-type conductivity and forms a control region; an Ni gate electrode which contacts with the p-type Al0.2Ga0.8N control layer; a Ti/Al source electrode and a Ti/Al drain electrode which are formed beside the p-type Al0.2Ga0.8N control layer; and an Ni ohmic electrode which is connected to the undoped GaN layer and serves as a hole absorbing electrode. With this transistor, it is possible to achieve a large-current operation and a high switching speed.
摘要翻译：提供了由氮化物半导体制成的常关型晶体管。晶体管包括：形成沟道区的未掺杂的GaN层; 形成在未掺杂的GaN层上并且具有比未掺杂的GaN层的带隙大的带隙的未掺杂的Al 2 O 3 Ga 0.8 N N层; 在未掺杂的Al 0.2 Ga 0.8 N上形成的p型Al 0.2 N 0.2 Ga N N N N控制层层，具有p型导电性并形成控制区; 与p型Al 0.2 Ga 0.8 N控制层接触的Ni栅电极; 在p型Al 0.2 Ga 0.8 N控制层旁边形成的Ti / Al源电极和Ti / Al漏电极; 以及连接到未掺杂的GaN层并用作空穴吸收电极的Ni欧姆电极。利用该晶体管，可以实现大电流动作和高切换速度。

10. 发明申请

US20140283723A1 SEWING MACHINE 有权
标题翻译：缝纫机
公开(公告)号：US20140283723A1
公开(公告)日：2014-09-25
申请号：US14185492
申请日：2014-02-20
申请人： Daisuke UEDA , Hiroshi YAMASAKI , Toshiyuki MAMIYA , Mitsuhiro IIDA , Kazusa KONDO
发明人： Daisuke UEDA , Hiroshi YAMASAKI , Toshiyuki MAMIYA , Mitsuhiro IIDA , Kazusa KONDO
IPC分类号： D05B3/02 , D05B55/14
CPC分类号： D05B3/02 , D05B55/14
摘要： A sewing machine includes a needle bar, a needle bar up-and-down movement mechanism, a swinging mechanism, a lower shaft, an outer shuttle, a thread cutting mechanism, a rotation speed adjustment mechanism, and an actuator. The needle bar up-and-down movement mechanism is configured to move the needle bar up and down.The swinging mechanism is configured to swing the needle bar in a left-right direction. The lower shaft is configured to rotate in synchronization with up-down movement of the needle bar. The outer shuttle is configured to rotate along with rotation of the lower shaft. The thread cutting mechanism is configured to cut at least an upper thread. The rotation speed adjustment mechanism is configured to adjust a rotation speed of the outer shuttle. The actuator is a driving source of the thread cutting mechanism and the rotation speed adjustment mechanism.
摘要翻译：缝纫机包括针杆，针杆上下运动机构，摆动机构，下轴，外梭，切线机构，转速调节机构和致动器。针杆上下移动机构配置为上下移动针杆。摆动机构构造成使针杆向左右方向摆动。下轴构造成与针杆的上下移动同步地旋转。外梭被构造成随着下轴的旋转而旋转。螺纹切割机构构造成至少切割面线。旋转速度调节机构构成为调整外梭的转速。致动器是切线机构和转速调节机构的驱动源。

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