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1. 发明授权

US5922212A Semiconductor sensor having suspended thin-film structure and method for fabricating thin-film structure body 失效
标题翻译：具有悬浮薄膜结构的半导体传感器和用于制造薄膜结构体的方法
公开(公告)号：US5922212A
公开(公告)日：1999-07-13
申请号：US663001
申请日：1996-06-07
申请人： Kazuhiko Kano , Kenichi Nara , Toshimasa Yamamoto , Nobuyuki Kato , Yoshitaka Gotoh , Yoshinori Ohtsuka , Kenichi Ao
发明人： Kazuhiko Kano , Kenichi Nara , Toshimasa Yamamoto , Nobuyuki Kato , Yoshitaka Gotoh , Yoshinori Ohtsuka , Kenichi Ao
IPC分类号： B81B3/00 , B81C1/00 , G01P15/08 , G01P15/125 , C23F1/00
CPC分类号： G01P15/125 , B81B3/0072 , B81C1/00666 , G01P15/0802 , B81C2201/0164 , B81C2201/0167 , B81C2201/017 , G01P2015/0814
摘要： A semiconductor sensor having a thin-film structure body, in which thin-film structure is prevented from bending due to the internal stress distribution in the thickness direction, is disclosed. A silicon-oxide film is formed as a sacrificial layer on a silicon substrate, and a polycrystalline-silicon thin film is formed on the silicon-oxide film. Thereafter, phosphorus (P) is ion-implanted in the surface of the polycrystalline-silicon thin film, and thereby the surface state of the polycrystalline-silicon thin film is modified. A portion of distribution of stress existing in the thickness direction of the polycrystalline-silicon thin film is changed by this modification, and stress distribution is adjusted. By removal of the silicon-oxide film, a movable member of the polycrystalline-silicon thin film is disposed above the silicon substrate with a gap interposed therebetween.
摘要翻译：公开了一种具有薄膜结构体的半导体传感器，其薄膜结构被防止由于厚度方向上的内部应力分布而弯曲。在硅衬底上形成氧化硅膜作牺牲层，在氧化硅膜上形成多晶硅薄膜。此后，将磷（P）离子注入多晶硅薄膜的表面，从而改变多晶硅薄膜的表面状态。通过该变形例改变在多晶硅薄膜的厚度方向上存在的应力分布的一部分，并且调整应力分布。通过去除氧化硅膜，多晶硅薄膜的可移动部件设置在硅衬底之上，其间插入间隙。

2. 发明授权

US5500549A Semiconductor yaw rate sensor 失效
标题翻译：半导体偏航率传感器
公开(公告)号：US5500549A
公开(公告)日：1996-03-19
申请号：US357258
申请日：1994-12-13
申请人： Yukihiro Takeuchi , Kozo Shibata , Yoshinori Ohtsuka , Kazuhiko Kano , Toshimasa Yamamoto
发明人： Yukihiro Takeuchi , Kozo Shibata , Yoshinori Ohtsuka , Kazuhiko Kano , Toshimasa Yamamoto
IPC分类号： G01P15/08 , B81B3/00 , B81C1/00 , G01C19/56 , G01C19/5755 , G01C19/5769 , G01P15/14 , H01L29/84 , H01L29/82
CPC分类号： G01C19/5719 , G01P2015/0814 , Y10S73/01
摘要： A semiconductor yaw rate sensor, which can be structured easily by means of an IC fabrication process, such that a yaw rate detection signal due to a current value is obtained by means of a transistor structure and a method of producing the same is disclosed. A weight supported by beams is disposed at a specified interval from a surface of a semiconductor substrate, and movable electrodes and excitation electrodes are formed integrally with the weight. Fixed electrodes for excitation use are fixed to the substrate in correspondence to the excitation electrodes. Along with this, source electrodes as well as drain electrodes are formed by means of a diffusion layer on a surface of the substrate at positions opposing the movable electrodes, such that drain current changes in correspondence with displacement of the movable electrodes by means of Corioli's force due to yaw rate, and the yaw rate is detected by this current.
摘要翻译：半导体偏航率传感器，其可以通过IC制造工艺容易地构造，使得通过晶体管结构获得由于电流值引起的横摆率检测信号，并且公开了其制造方法。由光束支撑的重量从半导体衬底的表面以规定的间隔设置，并且可动电极和激励电极与该重量一体地形成。用于激发使用的固定电极对应于激发电极固定到基板。与此同时，源电极和漏电极通过在与可动电极相对的位置的基板的表面上的扩散层形成，使得漏极电流随着可可电极的位移而变化由于偏航率，并且由该电流检测到横摆率。

3. 发明授权

US5572057A Semiconductor acceleration sensor with movable electrode 失效
标题翻译：具有可移动电极的半导体加速度传感器
公开(公告)号：US5572057A
公开(公告)日：1996-11-05
申请号：US360940
申请日：1994-12-21
申请人： Toshimasa Yamamoto , Yukihiro Takeuchi , Yoshinori Ohtsuka , Kazuhiko Kano
发明人： Toshimasa Yamamoto , Yukihiro Takeuchi , Yoshinori Ohtsuka , Kazuhiko Kano
IPC分类号： G01P15/08 , G01P15/125 , H01L29/82
CPC分类号： G01P15/0802 , G01P15/125 , G01P2015/0814 , G01P2015/0828 , Y10S73/01
摘要： Adverse effects due to electrostatic force between a semiconductor substrate and a movable electrode are avoided with a new structure. A movable electrode of beam structure is disposed at a specified interval above a p-type silicon substrate. Fixed electrodes, each composed of an impurity diffusion layer, are disposed on both sides of the movable electrode on the p-type silicon substrate; these fixed electrodes are self-aligningly with respect to the movable electrode. The movable electrode is displaced in accompaniment to the action of acceleration, and acceleration is detected by change (fluctuation) in current between the fixed electrodes generated by means of this displacement. Additionally, an electrode for movable electrode upward-movement use is disposed above the movable electrode, a potential difference is given between the movable electrode and the electrode for movable electrode upward-movement use, and attractive force of the movable electrode to the silicon substrate is alleviated.
摘要翻译：通过新的结构避免了由于半导体衬底和可移动电极之间的静电力引起的不利影响。光束结构的可移动电极以指定的间隔设置在p型硅衬底上方。每个由杂质扩散层构成的固定电极设置在p型硅衬底上的可移动电极的两侧; 这些固定电极相对于可动电极自对准。可移动电极伴随着加速度的作用而移动，并且通过由该位移产生的固定电极之间的电流的变化（波动）来检测加速度。另外，可动电极向上移动用的电极设置在可动电极的上方，在可动电极向上移动用的电极之间施加电位差，并且可移动电极对硅衬底的吸引力为缓解

4. 发明授权

US6048774A Method of manufacturing dynamic amount semiconductor sensor 失效
标题翻译：动态量半导体传感器的制造方法
公开(公告)号：US6048774A
公开(公告)日：2000-04-11
申请号：US103935
申请日：1998-06-25
申请人： Toshimasa Yamamoto , Nobuyuki Kato , Kazuhiko Kano , Makiko Sugiura
发明人： Toshimasa Yamamoto , Nobuyuki Kato , Kazuhiko Kano , Makiko Sugiura
IPC分类号： G01P15/08 , G01P15/125 , H01L29/84 , G01P15/13
CPC分类号： G01P15/125 , G01P15/0802 , G01P2015/0814
摘要： In a method of manufacturing a dynamic amount sensor including a beam structure and a fixed electrode which are respectively supported by anchor parts of a substrate, opening portions are formed on a first semiconductor substrate where the anchor parts are to be formed. Each of the opening portions is composed of a plurality of stripe-like openings. Then a first thin film for forming the anchor parts and a second thin film are formed on the first semiconductor substrate in that order. After the surface of the second thin film is polished, a second semiconductor substrate is bonded to the polished surface of the second thin film. In this method, because the opening portions are composed of the plurality of stripe-like openings, the second thin film is flattened without having any steps thereon.
摘要翻译：在制造分别由基板的锚定部支撑的梁结构和固定电极的动态量传感器的制造方法中，在要形成锚定部的第一半导体基板上形成开口部。每个开口部分由多个条状开口组成。然后在第一半导体衬底上依次形成用于形成锚定部分的第一薄膜和第二薄膜。在第二薄膜的表面被抛光之后，第二半导体衬底被结合到第二薄膜的抛光表面上。在该方法中，由于开口部分由多个条状开口组成，所以第二薄膜在其上没有任何步骤而变平。

5. 发明授权

US5987989A Semiconductor physical quantity sensor 失效
标题翻译：半导体物理量传感器
公开(公告)号：US5987989A
公开(公告)日：1999-11-23
申请号：US795402
申请日：1997-02-05
申请人： Toshimasa Yamamoto , Kenichi Ao , Yukihiro Takeuchi
发明人： Toshimasa Yamamoto , Kenichi Ao , Yukihiro Takeuchi
IPC分类号： G01P15/125 , B81B3/00 , B81B7/00 , B81C1/00 , G01C19/56 , G01P15/00 , G01P15/08 , G01P15/13 , H01L29/84
CPC分类号： B81B7/0006 , G01C19/5719 , G01P15/0802 , G01P15/131 , B81B2201/0235 , G01P2015/0814
摘要： A semiconductor physical quantity sensor includes a substrate and a beam structure having movable electrodes and spacing a given distance from an upper surface of the substrate. First fixed electrodes and second fixed electrodes are fixedly provided on the upper surface of the substrate. Each first fixed electrode faces one side of the corresponding movable electrode, while each second fixed electrode faces the other side of the corresponding movable electrode. A laminated structure of a lower layer insulating film, conductive films and an upper layer insulating film is arranged at an upper portion of the substrate. The conductive layers form a first wiring pattern for the first fixed electrodes, a second wiring pattern for the second fixed electrodes and a lower electrode. The first wiring pattern is electrically connected to the first fixed electrodes via openings formed in the upper layer insulating film and anchors of the first fixed electrodes, respectively. The second wiring pattern is electrically connected to the second fixed electrodes via openings formed in the upper layer insulating film and anchors of the second fixed electrodes, respectively. The lower electrode is electrically connected to the beam structure via an opening formed in the upper layer insulating film and an anchor of the beam structure.
摘要翻译：半导体物理量传感器包括基板和具有可移动电极并且与基板的上表面间隔给定距离的光束结构。第一固定电极和第二固定电极固定地设置在基板的上表面上。每个第一固定电极面对相应的可动电极的一侧，而每个第二固定电极面对相应的可移动电极的另一侧。下层绝缘膜，导电膜和上层绝缘膜的层叠结构设置在基板的上部。导电层形成用于第一固定电极的第一布线图案，第二固定电极的第二布线图案和下电极。第一布线图案分别经由形成在上层绝缘膜中的开口和第一固定电极的锚固件电连接到第一固定电极。第二布线图案分别经由形成在上层绝缘膜中的开口和第二固定电极的锚固件电连接到第二固定电极。下电极通过形成在上层绝缘膜中的开口和梁结构的锚固件而电连接到梁结构。

6. 发明授权

US5504356A Semiconductor accelerometer 失效
标题翻译：半导体加速度计
公开(公告)号：US5504356A
公开(公告)日：1996-04-02
申请号：US152505
申请日：1993-11-16
申请人： Yukihiro Takeuchi , Toshimasa Yamamoto , Yoshinori Ohtsuka , Shigeyuki Akita , Tadashi Hattori , Kazuhiko Kanou , Hirotane Ikeda
发明人： Yukihiro Takeuchi , Toshimasa Yamamoto , Yoshinori Ohtsuka , Shigeyuki Akita , Tadashi Hattori , Kazuhiko Kanou , Hirotane Ikeda
IPC分类号： G01P15/08 , G01P15/12 , H01L29/78 , H01L29/84
CPC分类号： G01P15/124 , G01P15/0802
摘要： This invention aims at providing a novel semiconductor accelerometer comprising a smaller number of substrates and a production method thereof.An insulating film is formed on a main plane of a P-type silicon substrate, and a beam-like movable electrode is formed on the insulating film. Fixed electrodes are then formed on both sides of the movable electrode in self-alignment with the movable electrode by diffusing an impurity into the P-type silicon substrate, and the insulating film below the movable electrode is etched and removed. There is thus produced a semiconductor accelerometer comprising the P-type silicon substrate 1, the movable electrode 4 having the beam structure and disposed above the P-type silicon substrate 1 with a predetermined gap between them, and the fixed electrodes 8, 9 consisting of the impurity diffusion layer and formed on both sides of the movable electrode 4 on the P-type silicon substrate 1 in self-alignment with the movable electrode 4. This sensor can detect acceleration from the change (increase/decrease) of a current between the fixed electrodes 8 and 9 resulting from the displacement of the movable electrode 4 due to acceleration.
摘要翻译：本发明的目的在于提供一种新型的半导体加速度计，其包括较少数量的基板及其制造方法。在P型硅基板的主平面上形成绝缘膜，在绝缘膜上形成有束状的可动电极。然后通过将杂质扩散到P型硅衬底中，在可动电极的两侧与可动电极自对准地形成固定电极，蚀刻除去可动电极下面的绝缘膜。因此，制造了包括P型硅衬底1，具有光束结构的可动电极4并且在它们之间具有预定间隙并且设置在P型硅衬底1上方的固定电极8,9的半导体加速度计，该杂质扩散层形成在与可动电极4自对准的P型硅衬底1上的可动电极4的两侧。该传感器可以从电流的变化（增加/减少）固定电极8和9由于加速而由可动电极4的位移而产生。

7. 发明授权

US07201053B2 Capacitance type physical quantity sensor 有权
标题翻译：电容式物理量传感器
公开(公告)号：US07201053B2
公开(公告)日：2007-04-10
申请号：US10834183
申请日：2004-04-29
申请人： Tetsuo Yoshioka , Akihiko Teshigahara , Junji Ohara , Yukihiro Takeuchi , Toshimasa Yamamoto , Kazuhiko Kano
发明人： Tetsuo Yoshioka , Akihiko Teshigahara , Junji Ohara , Yukihiro Takeuchi , Toshimasa Yamamoto , Kazuhiko Kano
IPC分类号： G01P15/125 , G01P9/04
CPC分类号： G01P15/0802 , G01P15/125 , G01P2015/0814
摘要： A capacitance type physical quantity sensor detects physical quantity. The sensor includes a movable portion including a movable electrode and a fixed portion including a fixed electrode. The fixed electrode includes a detection surface facing a detection surface of the movable electrode. The movable electrode is movable toward the fixed electrode in accordance with the physical quantity so that a distance between the detection surfaces is changeable. At least one of the movable and the fixed electrodes includes a groove. The groove is disposed on a top or a bottom of the one of the movable and the fixed electrodes, has a predetermined depth from the top or the bottom, and extends from the detection surface to an opposite surface.
摘要翻译：电容式物理量传感器检测物理量。传感器包括可移动部分，其包括可动电极和包括固定电极的固定部分。固定电极包括面向可动电极的检测面的检测面。可移动电极可以根据物理量朝向固定电极移动，使得检测表面之间的距离是可变的。可移动和固定电极中的至少一个包括凹槽。凹槽设置在可移动和固定电极中的一个的顶部或底部上，具有从顶部或底部的预定深度，并且从检测表面延伸到相对的表面。

8. 发明授权

US06240782B1 Semiconductor physical quantity sensor and production method thereof 有权
标题翻译：半导体物理量传感器及其制造方法
公开(公告)号：US06240782B1
公开(公告)日：2001-06-05
申请号：US09247865
申请日：1999-02-11
申请人： Nobuyuki Kato , Toshimasa Yamamoto , Tsuyoshi Fukada , Minekazu Sakai
发明人： Nobuyuki Kato , Toshimasa Yamamoto , Tsuyoshi Fukada , Minekazu Sakai
IPC分类号： G01P15125
CPC分类号： G01P15/125 , G01P15/0802 , G01P2015/0814
摘要： A semiconductor physical quantity sensor includes a substrate, a beam-structure movable portion and a fixed portion. The beam-structure movable portion is suspended by four anchors formed of polycrystalline films. A rectangular mass is suspended between beams. Movable electrodes project from both sides of the mass. First fixed electrodes and second fixed electrodes are fixedly provided on the surface of the substrate. The substrate has a laminated structure, wherein an oxide film, attaching film, insulating films, conductive film and insulating film are laminated on the substrate. An anchor formed from the conductive film is electrically connected to the attaching film. An electrode pad made of an aluminum film is provided the above the anchor. Because this structure enables the potential of the attaching film to be fixed, parasitic capacitance can be decreased.
摘要翻译：半导体物理量传感器包括基板，梁结构可动部和固定部。梁结构可移动部分由由多晶膜形成的四个锚固件悬挂。梁之间悬挂有矩形质量块。活动电极从质量两侧投射。第一固定电极和第二固定电极固定地设置在基板的表面上。基板具有叠层结构，其中在基板上层压氧化膜，附着膜，绝缘膜，导电膜和绝缘膜。由导电膜形成的锚固件与连接膜电连接。在锚上方设置由铝膜制成的电极垫。由于该结构能够使固定膜的电位固定，所以可以降低寄生电容。

9. 发明授权

US08710586B2 SIC semiconductor device and method for manufacturing the same 有权
标题翻译： SIC半导体器件及其制造方法
公开(公告)号：US08710586B2
公开(公告)日：2014-04-29
申请号：US13229892
申请日：2011-09-12
申请人： Toshimasa Yamamoto , Masahiro Sugimoto , Hidefumi Takaya , Jun Morimoto , Narumasa Soejima , Tsuyoshi Ishikawa , Yukihiko Watanabe
发明人： Toshimasa Yamamoto , Masahiro Sugimoto , Hidefumi Takaya , Jun Morimoto , Narumasa Soejima , Tsuyoshi Ishikawa , Yukihiko Watanabe
IPC分类号： H01L29/66 , H01L29/15
CPC分类号： H01L29/7813 , H01L29/086 , H01L29/1608 , H01L29/41766 , H01L29/45 , H01L29/66068
摘要： A SiC semiconductor device includes: a substrate, a drift layer, and a base region stacked in this order; first and second source regions and a contact layer in the base region; a trench penetrating the source and base regions; a gate electrode in the trench; an interlayer insulation film with a contact hole covering the gate electrode; a source electrode coupling with the source region and the contact layer via the contact hole; a drain electrode on the substrate; and a metal silicide film. The high concentration second source region is shallower than the low concentration first source region, and has a part covered with the interlayer insulation film, which includes a low concentration first portion near a surface and a high concentration second portion deeper than the first portion. The metal silicide film on the second part has a thickness larger than the first portion.
摘要翻译： SiC半导体器件包括：依次堆叠的衬底，漂移层和基极区域; 第一和第二源极区域和基极区域中的接触层; 穿透源区和基区的沟槽; 沟槽中的栅电极; 具有覆盖所述栅电极的接触孔的层间绝缘膜; 源极通过接触孔与源极区域和接触层耦合; 衬底上的漏电极; 和金属硅化物膜。高浓度第二源区比低浓度第一源区浅，并且具有被层间绝缘膜覆盖的部分，其包括表面附近的低浓度第一部分和比第一部分更深的高浓度第二部分。第二部分上的金属硅化物膜的厚度大于第一部分。

10. 发明申请

US20120061682A1 SIC SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译： SIC半导体器件及其制造方法
公开(公告)号：US20120061682A1
公开(公告)日：2012-03-15
申请号：US13229892
申请日：2011-09-12
申请人： Toshimasa Yamamoto , Masahiro Sugimoto , Hidefumi Takaya , Jun Morimoto , Narumasa Soejima , Tsuyoshi Ishikawa , Yukihiko Watanabe
发明人： Toshimasa Yamamoto , Masahiro Sugimoto , Hidefumi Takaya , Jun Morimoto , Narumasa Soejima , Tsuyoshi Ishikawa , Yukihiko Watanabe
IPC分类号： H01L29/24 , H01L21/336
CPC分类号： H01L29/7813 , H01L29/086 , H01L29/1608 , H01L29/41766 , H01L29/45 , H01L29/66068
摘要： A SiC semiconductor device includes: a substrate, a drift layer, and a base region stacked in this order; first and second source regions and a contact layer in the base region; a trench penetrating the source and base regions; a gate electrode in the trench; an interlayer insulation film with a contact hole covering the gate electrode; a source electrode coupling with the source region and the contact layer via the contact hole; a drain electrode on the substrate; and a metal silicide film. The high concentration second source region is shallower than the low concentration first source region, and has a part covered with the interlayer insulation film, which includes a low concentration first portion near a surface and a high concentration second portion deeper than the first portion. The metal silicide film on the second part has a thickness larger than the first portion.
摘要翻译： SiC半导体器件包括：依次堆叠的衬底，漂移层和基极区域; 第一和第二源极区域和基极区域中的接触层; 穿透源区和基区的沟槽; 沟槽中的栅电极; 具有覆盖所述栅电极的接触孔的层间绝缘膜; 源极通过接触孔与源极区域和接触层耦合; 衬底上的漏电极; 和金属硅化物膜。高浓度第二源区比低浓度第一源区浅，并且具有被层间绝缘膜覆盖的部分，其包括表面附近的低浓度第一部分和比第一部分更深的高浓度第二部分。第二部分上的金属硅化物膜的厚度大于第一部分。

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