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    • 10. 发明授权
    • Semiconductor laser device, semiconductor laser array device and optical fiber transmission system
    • 半导体激光器件,半导体激光器阵列器件和光纤传输系统
    • US06546034B2
    • 2003-04-08
    • US09748175
    • 2000-12-27
    • Masaaki KomoriMasahiro AokiKazuhisa UomiKazuhiko Hosomi
    • Masaaki KomoriMasahiro AokiKazuhisa UomiKazuhiko Hosomi
    • H01S500
    • H01S5/2231H01S5/2063H01S5/2205H01S5/2206H01S5/2222H01S5/2224
    • A semiconductor laser device includes a semiconductor substrate, a first cladding region on one side of the semiconductor substrate, an active layer region, and a second cladding region disposed on an opposite side of the semiconductor substrate. The active layer region is disposed between the semiconductor substrate and the second cladding region. A first semiconductor region is provided on either side of the active layer region in parallel with a traveling direction of light in the active layer region and has an electric resistance higher than that of the active layer region and a refractive index higher than that of the semiconductor substrate. An insulative or semi-insulative second semiconductor region is formed between the first semiconductor region and part of the second cladding region. A first electrode and a second electrode are provided for injecting a current into the active layer region.
    • 半导体激光器件包括半导体衬底,半导体衬底的一侧上的第一包层区域,有源层区域和设置在半导体衬底的相对侧上的第二覆盖区域。 有源层区域设置在半导体衬底和第二覆盖区域之间。 第一半导体区域与有源层区域中的光的行进方向平行地设置在有源层区域的两侧,并且具有比有源层区域高的电阻,并且具有比半导体的折射率高的折射率 基质。 在第一半导体区域和第二包层区域的一部分之间形成绝缘或半绝缘的第二半导体区域。 提供第一电极和第二电极用于将电流注入到有源层区域中。