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1. 发明申请

US20110007354A1 PRINTER AND MESSAGE MANAGING METHOD 审中-公开
标题翻译：打印机和消息管理方法
公开(公告)号：US20110007354A1
公开(公告)日：2011-01-13
申请号：US12832265
申请日：2010-07-08
申请人： Kazuaki Seki , Masayuki Osawa , Hiroshi Shimomura
发明人： Kazuaki Seki , Masayuki Osawa , Hiroshi Shimomura
IPC分类号： G06F15/00
CPC分类号： B41J3/4075 , B41J3/46 , G07G5/00
摘要： According to one embodiment, a printer includes a commodity file configured to store, by commodity, commodity data including at least names of commodities, a message file configured to store massage data allocated to the commodity data and combined with the commodity data, an extracting unit configured to extract, from the message file, the message data allocated to none of the commodity data, a display unit configured to display the message data extracted by the extracting unit, and a deleting unit configured to delete, from the message file, the message data displayed by the display unit.
摘要翻译：根据一个实施例，打印机包括商品文件，其被配置为商品存储至少包括商品名称的商品数据，被配置为存储分配给商品数据并与商品数据组合的按摩数据的消息文件，提取单元被配置为从所述消息文件中提取分配给所述商品数据的消息数据;显示单元，被配置为显示由所述提取单元提取的消息数据;以及删除单元，被配置为从所述消息文件中删除所述消息由显示单元显示的数据。

2. 发明授权

US09166069B2 Light receiving circuit 有权
标题翻译：光接收电路
公开(公告)号：US09166069B2
公开(公告)日：2015-10-20
申请号：US13601388
申请日：2012-08-31
申请人： Masayuki Sugizaki , Shigeyuki Sakura , Miki Hidaka , Hiroshi Shimomura
发明人： Masayuki Sugizaki , Shigeyuki Sakura , Miki Hidaka , Hiroshi Shimomura
IPC分类号： H01L31/00 , H01L27/00 , H01L31/02 , H03F3/08
CPC分类号： H01L31/02019 , H03F3/082
摘要： According to an embodiment, a light-receiving circuit includes a MOSFET, a first light-receiving element and a second light-receiving element. The first light-receiving element controls a state of the MOSFET between ON state and OFF state by applying a voltage induced by a light signal between a gate of the MOSFET and a source of the MOSFET; and a second light-receiving element controls a threshold voltage of the MOSFET.
摘要翻译：根据实施例，光接收电路包括MOSFET，第一光接收元件和第二光接收元件。第一光接收元件通过在MOSFET的栅极和MOSFET的源极之间施加由光信号感应的电压来控制MOSFET在导通状态和断开状态之间的状态; 并且第二光接收元件控制MOSFET的阈值电压。

3. 发明申请

US20130193495A1 LIGHT RECEIVING CIRCUIT 有权
标题翻译：光接收电路
公开(公告)号：US20130193495A1
公开(公告)日：2013-08-01
申请号：US13601388
申请日：2012-08-31
申请人： Masayuki Sugizaki , Shigeyuki Sakura , Miki Hidaka , Hiroshi Shimomura
发明人： Masayuki Sugizaki , Shigeyuki Sakura , Miki Hidaka , Hiroshi Shimomura
IPC分类号： H01L31/02
CPC分类号： H01L31/02019 , H03F3/082
摘要： According to an embodiment, a light-receiving circuit includes a MOSFET, a first light-receiving element and a second light-receiving element. The first light-receiving element controls a state of the MOSFET between ON state and OFF state by applying a voltage induced by a light signal between a gate of the MOSFET and a source of the MOSFET; and a second light-receiving element controls a threshold voltage of the MOSFET.
摘要翻译：根据实施例，光接收电路包括MOSFET，第一光接收元件和第二光接收元件。第一光接收元件通过在MOSFET的栅极和MOSFET的源极之间施加由光信号感应的电压来控制MOSFET在导通状态和断开状态之间的状态; 并且第二光接收元件控制MOSFET的阈值电压。

4. 发明授权

US08146693B2 Motorcycle and intake device thereof 有权
标题翻译：摩托车及其进气装置
公开(公告)号：US08146693B2
公开(公告)日：2012-04-03
申请号：US12391851
申请日：2009-02-24
申请人： Satoshi Oohashi , Shidehiko Miyashiro , Hiroshi Shimomura , Satoshi Terumichi
发明人： Satoshi Oohashi , Shidehiko Miyashiro , Hiroshi Shimomura , Satoshi Terumichi
IPC分类号： B60K13/02
CPC分类号： B60K13/02 , B60Y2200/12 , B62M7/02
摘要： According to some embodiments, a motorcycle includes a vehicle body frame 20, an engine 3 mounted on the vehicle body frame, a fuel tank 4 disposed above the engine, a radiator 5 disposed in front of the engine, and an intake device 6 connected to the engine. The intake device 6 has an intake opening 30d, and an intake passage 31 which connects the intake opening in fluid communication with a front portion of the engine. The intake passage 31 is disposed between the fuel tank 4 and the radiator 5 as viewed from a side of the motorcycle.
摘要翻译：根据一些实施例，摩托车包括车身框架20，安装在车体框架上的发动机3，设置在发动机上方的燃料箱4，设置在发动机前方的散热器5和连接到引擎。进气装置6具有进气口30d和将进气口与发动机的前部流体连通的进气通道31。从摩托车的侧面观察，进气通道31设置在燃料箱4和散热器5之间。

5. 发明授权

US06913426B2 Throwaway insert 有权
标题翻译：丢弃插入
公开(公告)号：US06913426B2
公开(公告)日：2005-07-05
申请号：US10443913
申请日：2003-05-21
申请人： Nobukazu Horiike , Jun Kitajima , Hiroshi Shimomura , Koichi Ikenaga
发明人： Nobukazu Horiike , Jun Kitajima , Hiroshi Shimomura , Koichi Ikenaga
IPC分类号： B23C5/20 , B23C5/10 , B23C5/22 , B26D1/00
CPC分类号： B23C5/1045 , B23C5/2247 , B23C2200/085 , B23C2200/165 , B23C2200/206 , B23C2200/323 , B23C2200/366 , Y10T407/1924 , Y10T407/1936 , Y10T407/23 , Y10T407/235 , Y10T407/24 , Y10T407/245
摘要： A throwaway insert enables reduction in cutting force and improves chip separation ability without sacrificing the strength of cutting edge thereof. An upper face of the throwaway insert is provided with an undulating portion, which is formed by alternately arranged concave portions and convex portions, so as to provide a wavy shape to the cutting edge. The undulating portion comprises four concave portions, i.e., a first deep-concave portion, a first shallow-concave portion, a second deep-concave portion, and a second shallow-concave portion. The first deep-concave portion and the second deep-concave portion are located so that effective cutting region of the cutting edge is divided into three portions having lengths substantially equal to each other, and the second deep-concave portion is made deeper than the first deep-concave portion.
摘要翻译：一次性刀片可以减少切削力，提高切屑分离能力，而不会牺牲切削刃的强度。一次性插入件的上表面设置有由交替布置的凹部和凸部形成的起伏部分，以便向切割刃提供波浪形状。起伏部分包括四个凹部，即第一深凹部，第一浅凹部，第二深凹部和第二浅凹部。所述第一深凹部和所述第二深凹部位于所述切削刃的有效切削区域被分割为长度大致相等的三个部分，所述第二深凹部比所述第一深凹部深凹部分。

6. 发明授权

US6157045A Semiconductor device evaluation pattern and evaluation method 失效
标题翻译：半导体器件评估模式及评估方法
公开(公告)号：US6157045A
公开(公告)日：2000-12-05
申请号：US702176
申请日：1996-08-23
申请人： Hiroshi Shimomura
发明人： Hiroshi Shimomura
IPC分类号： H01L23/544 , H01L23/58
CPC分类号： H01L22/34 , H01L2924/0002
摘要： An evaluation pattern and an evaluation method of devices capable of measuring with precision the unit capacitance and specific precision of passive devices necessary in analog circuits on a single semiconductor substrate, unit capacitors in such a quantity to overcome the measuring error of measuring instruments, arranged in an array by nx pieces in the X direction (nx being a natural number) and ny pieces in the Y direction (ny being a natural number), are connected by wiring to be capable of measuring the sum of capacitances in each column at least in one of the array directions in the X and Y directions of the unit capacitors.
摘要翻译：能够精确测量单个半导体衬底上的模拟电路所需的无源器件的单位电容和特定精度的器件的评估模式和评估方法，以克服测量仪器的测量误差的单位电容器在X方向（nx为自然数）和n个Y方向上的ny（ny为自然数）的数组通过布线连接，以便能够至少在在单位电容器的X和Y方向上的阵列方向之一。

7. 发明授权

US5839859A Cutting tool mating surfaces having a V-shape cross-section 失效
标题翻译：具有V形横截面的切割工具配合表面
公开(公告)号：US5839859A
公开(公告)日：1998-11-24
申请号：US923540
申请日：1997-09-04
申请人： Hiroshi Shimomura , Syoji Takiguchi
发明人： Hiroshi Shimomura , Syoji Takiguchi
IPC分类号： B23B51/10 , B23C3/05 , B23B51/00
CPC分类号： B23B51/106 , B23C3/055 , B23C2215/60 , Y10T408/5587 , Y10T408/85 , Y10T408/8588
摘要： A cutting tool has a slidable cutting-blade chip 5A, in which a slider 7 is slidably mounted into a groove 6 formed in the cutting tool main body 1, to offset a pressing force applied to the bottom face 6c of the groove 6 through the slider 7, to prevent abrasion of the slider 7 and the groove 6 and uneven abrasion of serration grooves 7a and 8a of the slider 7 and a spacer 8, and to suppress backlash of the slider 7. A spacer 9 is detachably disposed between one side face 6a of a groove 6 and a slider 7, a plate 22 is disposed between another side face of the slider 7 and another side face 6b of the groove 6 so as to press the plate 22 toward the side face 6a. A protruding section 21 and a dent section 24 each have a V-shape cross-section and are formed on another side face of the slider 7 and on one side face of the plate 22, respectively, wherein the protruding section 21 and the dent section can come into contact with each other.
摘要翻译：切削工具具有可滑动的切削刃片5A，其中滑块7可滑动地安装在形成在切削工具主体1中的槽6中，以抵消施加到凹槽6的底面6c的压力，滑块7，以防止滑块7和凹槽6的磨损以及滑块7和间隔件8的锯齿槽7a和8a的不均匀磨损，并且抑制滑块7的间隙。间隔件9可拆卸地设置在一侧槽6的表面6a和滑块7，在滑块7的另一侧面和槽6的另一侧面6b之间设置有板22，以将板22朝向侧面6a按压。突出部21和凹陷部24分别具有V形横截面并分别形成在滑块7的另一侧面和板22的一个侧面上，其中突出部21和凹部可以相互接触。

8. 发明授权

US5296388A Fabrication method for semiconductor devices 失效
标题翻译：半导体器件制造方法
公开(公告)号：US5296388A
公开(公告)日：1994-03-22
申请号：US729490
申请日：1991-07-12
申请人： Shuichi Kameyama , Atsushi Hori , Hiroshi Shimomura , Mizuki Segawa
发明人： Shuichi Kameyama , Atsushi Hori , Hiroshi Shimomura , Mizuki Segawa
IPC分类号： H01L21/20 , H01L21/265 , H01L21/285 , H01L21/331
CPC分类号： H01L29/66272 , H01L21/2022 , H01L21/2652 , H01L21/28525 , Y10S148/011 , Y10S148/124 , Y10S438/969
摘要： A fabrication method for semiconductor devices connecting a multi-crystal semiconductor thin film and a semiconductor region including a high density of an impurity formed in a single crystal semiconductor substrate. After forming a N-type semiconductor region as the emitter by ion implanting, for instance, as into a P-type semiconductor region as the base, a polysilicon thin film 114 is deposited so as to be implanted with As ions and then heat treated. In this case, an amorphous portion of the N-type semiconductor region and an amorphous silicon thin film in contact therewith are transformed by solid phase epitaxial growth so as to form a single crystal semiconductor region, a single-crystalline silicon thin film, and a polysilicon thin film, thus forming a bipolar element having an emitter.
摘要翻译：连接多晶半导体薄膜和包含在单晶半导体衬底中形成的高浓度杂质的半导体区域的半导体器件的制造方法。在通过离子注入形成作为发射极的N型半导体区域之后，例如作为基底的P型半导体区域，沉积多晶硅薄膜114，以便注入As离子，然后进行热处理。在这种情况下，通过固相外延生长来转变N型半导体区域的非晶部分和与其接触的非晶硅薄膜，从而形成单晶半导体区域，单晶硅薄膜和多晶硅薄膜，从而形成具有发射极的双极元件。

9. 发明授权

US5254485A Method for manufacturing bipolar semiconductor device 失效
标题翻译：制造双极型半导体器件的方法
公开(公告)号：US5254485A
公开(公告)日：1993-10-19
申请号：US760987
申请日：1991-09-17
申请人： Mizuki Segawa , Shuichi Kameyama , Hiroshi Shimomura , Atsushi Hori
发明人： Mizuki Segawa , Shuichi Kameyama , Hiroshi Shimomura , Atsushi Hori
IPC分类号： H01L21/331 , H01L21/265 , H01L29/70
CPC分类号： H01L29/66272 , Y10S148/01
摘要： There is disclosed a method for manufacturing a bipolar semiconductor device in which emitter region and active base region are formed by implanting impurities of first and second conduction types in a first semiconductor region of the first conduction type to be a collector through a non-single crystalline semiconductor thin film, a second semiconductor thin film is formed on the first semiconductor thin film, and an impurity of the first conduction type is introduced in the second semiconductor thin film after patterning the first and second semiconductor thin film so as to form an emitter electrode.
摘要翻译：公开了一种制造双极型半导体器件的方法，其中通过将第一和第二导电类型的杂质注入第一导电类型的第一半导体区域中作为集电极的非单晶结构形成发射极区域和有源基极区域在第一半导体薄膜上形成第二半导体薄膜，在对第一和第二半导体薄膜进行图案化之后，将第一导电类型的杂质引入到第二半导体薄膜中，以形成发射极。

10. 发明授权

US4699549A Insert rotary cutter 失效
标题翻译：插入旋转切割机
公开(公告)号：US4699549A
公开(公告)日：1987-10-13
申请号：US871117
申请日：1986-06-05
申请人： Hiroshi Shimomura , Sueji Takaya , Kazuo Iizuka
发明人： Hiroshi Shimomura , Sueji Takaya , Kazuo Iizuka
IPC分类号： B23B51/04 , B23C5/08 , B23C5/10 , B23C5/22 , B23C5/20
CPC分类号： B23C5/1072 , B23B51/048 , B23C5/08 , B23C5/109 , B23C5/2221 , B23C2200/083 , B23C2200/123 , B23C2200/203 , Y10S408/713 , Y10T407/1924 , Y10T407/1964 , Y10T407/23 , Y10T408/906
摘要： An insert rotary cutter for processing a metal workpiece includes a cutter body having an axis of rotation therethrough. The cutter includes at least one cutter insert releasably mounted on an outer periphery of the body. The insert is of a generally polygonal shape having a curved front face. The front face has a pair of opposed marginal ridges serving as respective main cutting edges. The front face has marginal portions disposed adjacent and extending along the main cutting edges, and the marginal portions serve as respective rake surfaces for the main cutting edges. Each of the rake surface is convexly curved as viewed from a respective one of the main cutting edges and is concavely curved as viewed along a respective one of the main cutting edges.
摘要翻译：用于处理金属工件的插入式旋转切割器包括具有穿过其中的旋转轴线的切割器主体。切割器包括可释放地安装在主体的外周上的至少一个切削刀片。插入件具有大致多边形的形状，具有弯曲的正面。前表面具有一对相对的边缘脊，用作相应的主切削刃。前表面具有邻近并沿着主切削刃延伸的边缘部分，并且边缘部分用作主切削刃的相应的前刀面。每个前刀面从相应的一个主切削刃观察时呈凸形弯曲，并且沿相应的一个主切削刃观察时呈凹形弯曲。

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