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1. 发明申请

US20110007354A1 PRINTER AND MESSAGE MANAGING METHOD 审中-公开
标题翻译：打印机和消息管理方法
公开(公告)号：US20110007354A1
公开(公告)日：2011-01-13
申请号：US12832265
申请日：2010-07-08
申请人： Kazuaki Seki , Masayuki Osawa , Hiroshi Shimomura
发明人： Kazuaki Seki , Masayuki Osawa , Hiroshi Shimomura
IPC分类号： G06F15/00
CPC分类号： B41J3/4075 , B41J3/46 , G07G5/00
摘要： According to one embodiment, a printer includes a commodity file configured to store, by commodity, commodity data including at least names of commodities, a message file configured to store massage data allocated to the commodity data and combined with the commodity data, an extracting unit configured to extract, from the message file, the message data allocated to none of the commodity data, a display unit configured to display the message data extracted by the extracting unit, and a deleting unit configured to delete, from the message file, the message data displayed by the display unit.
摘要翻译：根据一个实施例，打印机包括商品文件，其被配置为商品存储至少包括商品名称的商品数据，被配置为存储分配给商品数据并与商品数据组合的按摩数据的消息文件，提取单元被配置为从所述消息文件中提取分配给所述商品数据的消息数据;显示单元，被配置为显示由所述提取单元提取的消息数据;以及删除单元，被配置为从所述消息文件中删除所述消息由显示单元显示的数据。

2. 发明授权

US08427798B2 Semiconductor integrated circuit device 有权
标题翻译：半导体集成电路器件
公开(公告)号：US08427798B2
公开(公告)日：2013-04-23
申请号：US13034012
申请日：2011-02-24
申请人： Hiroshi Shimomura , Masaru Numano
发明人： Hiroshi Shimomura , Masaru Numano
IPC分类号： H02H9/00
CPC分类号： H02H9/046
摘要： In one embodiment, a semiconductor integrated circuit includes a power source circuit connected to a terminal of a first high potential side power source and outputs a voltage of a second high potential side power source, and an output transistor outputting an output signal to an output terminal. A cathode of a first diode is connected to the terminal of the first high potential side power source and an anode thereof is connected to the output terminal. A current source and a capacitor are connected between a terminal of the second high potential side power source and the terminal of a low potential side power source. A signal from a connection node of the current source and the capacitor and a control signal are inputted to a logic circuit, and the logic circuit outputs a signal obtained by a logic operation to the control terminal of the output transistor.
摘要翻译：在一个实施例中，半导体集成电路包括连接到第一高电位侧电源的端子的电源电路，并输出第二高电位侧电源的电压，以及将输出信号输出到输出端子的输出晶体管。第一二极管的阴极连接到第一高电位侧电源的端子，其阳极连接到输出端子。电流源和电容器连接在第二高电位侧电源的端子和低电位侧电源的端子之间。来自电流源和电容器的连接节点的信号和控制信号被输入到逻辑电路，并且逻辑电路将通过逻辑运算获得的信号输出到输出晶体管的控制端子。

3. 发明授权

US08058694B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08058694B2
公开(公告)日：2011-11-15
申请号：US11812291
申请日：2007-06-18
申请人： Hiroshi Shimomura
发明人： Hiroshi Shimomura
IPC分类号： H01L27/088
CPC分类号： H01L29/4238 , H01L29/78
摘要： In a semiconductor device, such as a MOSFET or the like, which is a high-frequency LSI achieving a low noise figure and a high maximum oscillation frequency and which has unit cells with a ring-shaped gate electrode arranged in an array, gate drawing wires connecting together the gate electrode and gate contact pad portions are arranged on a region excluding a drain region and a source region, that is, on an isolation region. Bending portions of the ring-shaped gate electrode are all formed on the isolation region. This therefore permits an improvement in high frequency characteristics such as noise, the maximum oscillation frequency, and the like while eliminating unnecessary gate capacity addition, and also permits small characteristic variation even if a machining shape of the bending portions of the gate electrode is unstable.
摘要翻译：在作为实现低噪声系数和高最大振荡频率的高频LSI的MOSFET等半导体装置中，具有排列成阵列的环状栅电极的单位电池，栅极图将栅电极和栅极接触焊盘部分连接在一起的导线布置在排除区域和源极区域之外的区域上，即在隔离区域上。环形栅电极的弯曲部分都形成在隔离区域上。因此，能够在消除不必要的栅极容量添加的同时，能够提高高频特性，例如噪声，最大振荡频率等，并且即使栅电极的弯曲部分的加工形状不稳定也允许小的特性变化。

4. 发明授权

US07572087B2 Throwaway tip and throwaway-type cutting tool 有权
标题翻译：抛出尖端和一次性切割工具
公开(公告)号：US07572087B2
公开(公告)日：2009-08-11
申请号：US11830253
申请日：2007-07-30
申请人： Hidehiko Nagaya , Hiroshi Shimomura
发明人： Hidehiko Nagaya , Hiroshi Shimomura
IPC分类号： B23B27/02 , B23B27/14
CPC分类号： B23C5/109 , B23C5/207 , B23C5/2221 , B23C2200/0416 , B23C2200/0472 , B23C2200/201 , Y10T407/1924 , Y10T407/1948 , Y10T407/2202 , Y10T407/23 , Y10T407/24
摘要： A cutting tool including an end-milling tool body having a distal end, and a tip mounted to the distal end. The tip is a substantially planar plate including a first edge corner having an angle of less than 90°, a second edge corner having an angle of greater than 90°, and a third edge corner and a fourth edge corner each having a corner angle of 90°. Alternatively, a plurality of tips are mounted to the distal end, where each tip has first, second, and third straight cutting edges. The second edge being at less than 90° with the first edge and the third edge being at less than 90° with the second edge, and at least one of a first corner between the first and second edges and a second corner between the second and third edges is arranged to project along an outer periphery of the distal end.
摘要翻译：一种切削工具，包括具有远端的端铣刀体，以及安装在远端的刀头。尖端是包括具有小于90°的角度的第一边缘角，具有大于90°的角度的第二边缘角以及第三边角和第四边角， 90°。或者，多个尖端安装到远端，其中每个尖端具有第一，第二和第三直线切削刃。所述第二边缘处于小于90°，所述第一边缘和所述第三边缘与所述第二边缘处于小于90°，并且所述第一边缘和所述第二边缘之间的第一拐角和所述第二边缘和所述第二边缘之间的第二拐角中的至少一个第三边缘布置成沿着远端的外周突出。

5. 发明申请

US20080122014A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20080122014A1
公开(公告)日：2008-05-29
申请号：US11812291
申请日：2007-06-18
申请人： Hiroshi Shimomura
发明人： Hiroshi Shimomura
IPC分类号： H01L29/78
CPC分类号： H01L29/4238 , H01L29/78
摘要： In a semiconductor device, such as a MOSFET or the like, which is a high-frequency LSI achieving a low noise figure and a high maximum oscillation frequency and which has unit cells with a ring-shaped gate electrode arranged in an array, gate drawing wires connecting together the gate electrode and gate contact pad portions are arranged on a region excluding a drain region and a source region, that is, on an isolation region. Bending portions of the ring-shaped gate electrode are all formed on the isolation region. This therefore permits an improvement in high frequency characteristics such as noise, the maximum oscillation frequency, and the like while eliminating unnecessary gate capacity addition, and also permits small characteristic variation even if a machining shape of the bending portions of the gate electrode is unstable.
摘要翻译：在作为实现低噪声系数和高最大振荡频率的高频LSI的MOSFET等半导体装置中，具有排列成阵列的环状栅电极的单电池，栅极图将栅电极和栅极接触焊盘部分连接在一起的导线布置在排除区域和源极区域之外的区域上，即在隔离区域上。环形栅电极的弯曲部分都形成在隔离区域上。因此，能够在消除不必要的栅极容量添加的同时，能够提高高频特性，例如噪声，最大振荡频率等，并且即使栅电极的弯曲部分的加工形状不稳定也允许小的特性变化。

6. 发明授权

US06339868B1 Cutting tool and shrink fitting method for the same 失效
标题翻译：切割工具和收缩配合方法相同
公开(公告)号：US06339868B1
公开(公告)日：2002-01-22
申请号：US09456548
申请日：1999-12-08
申请人： Hidehiko Nagaya , Hiroshi Shimomura
发明人： Hidehiko Nagaya , Hiroshi Shimomura
IPC分类号： B23P1102
CPC分类号： B23P11/027 , B23B31/1179 , Y10T29/49865 , Y10T279/17957 , Y10T279/35 , Y10T403/48 , Y10T409/303752 , Y10T409/30952
摘要： A cutting tool including a tool holding portion and a tool. The tool is configured to be inserted into a hole of the tool holding portion. The tool includes a tool main body, a guide portion, and a shoulder portion. The tool maim body has a tool outer diameter larger than the hole inner diameter of the hole when the tool holding portion is not heated. The guide portion is coaxially connected to the tool main body and configured to position the tool substantially coaxially with respect to the tool holding portion. The guide portion has a guide outer diameter smaller than the hole inner diameter of the hole so that the guide portion is inserted into the hole. The shoulder portion is formed between the tool main body and the guide portion so as to sit on a surface around the hole to support the tool when the guide portion is inserted into the hole.
摘要翻译：一种包括工具保持部和工具的切削工具。该工具被构造成插入到工具保持部的孔中。该工具包括工具主体，引导部和肩部。当刀具保持部未被加热时，刀具损伤体具有比孔的孔内径大的刀具外径。引导部分同轴地连接到工具主体并构造成使工具相对于工具保持部分基本同轴地定位。引导部具有小于孔的孔内径的引导外径，使得引导部插入孔中。肩部形成在工具主体和引导部之间，以便在导向部插入孔时坐在孔周围的表面上，以支撑工具。

7. 发明授权

US5183768A Method of fabricating semiconductor device by forming doped regions that limit width of the base 失效
标题翻译：通过形成限制基底宽度的掺杂区制造半导体器件的方法
公开(公告)号：US5183768A
公开(公告)日：1993-02-02
申请号：US729965
申请日：1991-07-15
申请人： Shuichi Kameyama , Hiroshi Shimomura , Kazuya Kikuchi
发明人： Shuichi Kameyama , Hiroshi Shimomura , Kazuya Kikuchi
IPC分类号： H01L21/265 , H01L21/331 , H01L21/74 , H01L29/08
CPC分类号： H01L29/66272 , H01L21/26586 , H01L21/74 , H01L29/0821 , Y10S148/01 , Y10S148/143
摘要： A first semiconductor region is of a first conduction type and forms a transistor collector. A second semiconductor region is of a second conduction type and forms a transistor base. The second semiconductor region extends in the first semiconductor region. A third semiconductor region is of the first conduction type and forms a transistor emitter. The third semiconductor region extends in the second semiconductor region. A fourth semiconductor region is of the first conduction type and has a first portion and a second portion. The first portion extends in a part of the first semiconductor region below an edge of the third semiconductor region, and the second portion extends from the first semiconductor region into a part of the second semiconductor region outward of the edge of the third semiconductor region to limit a width of the transistor base.
摘要翻译：第一半导体区域是第一导电类型并形成晶体管集电极。第二半导体区域是第二导电类型并形成晶体管基极。第二半导体区域在第一半导体区域中延伸。第三半导体区域是第一导电类型并形成晶体管发射极。第三半导体区域在第二半导体区域中延伸。第四半导体区域是第一导电类型并且具有第一部分和第二部分。第一部分在第三半导体区域的边缘下方的第一半导体区域的一部分中延伸，并且第二部分从第一半导体区域延伸到第三半导体区域的边缘外部的第二半导体区域的一部分，以限制晶体管基极的宽度。

8. 发明授权

US4714383A Insert rotary cutter 失效
标题翻译：插入旋转切割机
公开(公告)号：US4714383A
公开(公告)日：1987-12-22
申请号：US887626
申请日：1986-07-21
申请人： Hiroshi Shimomura , Kazuo Iizuka , Makoto Harano , Akifumi Hamada
发明人： Hiroshi Shimomura , Kazuo Iizuka , Makoto Harano , Akifumi Hamada
IPC分类号： B23C5/08 , B23C5/22 , B23C5/20
CPC分类号： B23C5/1072 , B23C5/08 , B23C5/2221 , B23C2200/0416 , B23C2200/0433 , B23C2200/123 , B23C2200/203 , B23C2200/367 , Y10S408/713 , Y10T407/1924 , Y10T407/1958 , Y10T407/1964 , Y10T407/23 , Y10T408/906
摘要： An insert rotary cutter for processing a metal workpiece includes a cutter body of a generally circular cross-section having an axis of rotation therethrough. The cutter includes one or more cutter inserts releasably mounted on a periphery of the cutter body. The insert includes a generally quadrilateral plate defined by a front face, a rear face disposed generally parallel to the front face and four side faces. The insert has a pair of main cutting edges defined by the front face and one pair of the opposite side faces. The pair of opposite side faces serve as respective rake surfaces for the main cutting edges. Each of the rake surfaces is convexly curved in such a manner that the width of the insert between the rake surfaces is larger at a central portion of each main cutting edge than at opposite ends of the main cutting edge.
摘要翻译：用于处理金属工件的插入式旋转切割器包括具有通过其旋转的轴线的大致圆形横截面的刀具本体。切割器包括可释放地安装在切割器主体的周边上的一个或多个切割器刀片。插入件包括由前表面限定的大致四边形板，大体上平行于前表面设置的后表面和四个侧面。刀片具有由前表面和一对相对侧面限定的一对主切削刃。一对相对的侧面用作主切削刃的相应的前刀面。每个前刀面以这样的方式凸出地弯曲，使得前刀面之间的刀片的宽度在每个主切削刃的中心部分比在主切削刃的相对端处更大。

9. 发明授权

US09166069B2 Light receiving circuit 有权
标题翻译：光接收电路
公开(公告)号：US09166069B2
公开(公告)日：2015-10-20
申请号：US13601388
申请日：2012-08-31
申请人： Masayuki Sugizaki , Shigeyuki Sakura , Miki Hidaka , Hiroshi Shimomura
发明人： Masayuki Sugizaki , Shigeyuki Sakura , Miki Hidaka , Hiroshi Shimomura
IPC分类号： H01L31/00 , H01L27/00 , H01L31/02 , H03F3/08
CPC分类号： H01L31/02019 , H03F3/082
摘要： According to an embodiment, a light-receiving circuit includes a MOSFET, a first light-receiving element and a second light-receiving element. The first light-receiving element controls a state of the MOSFET between ON state and OFF state by applying a voltage induced by a light signal between a gate of the MOSFET and a source of the MOSFET; and a second light-receiving element controls a threshold voltage of the MOSFET.
摘要翻译：根据实施例，光接收电路包括MOSFET，第一光接收元件和第二光接收元件。第一光接收元件通过在MOSFET的栅极和MOSFET的源极之间施加由光信号感应的电压来控制MOSFET在导通状态和断开状态之间的状态; 并且第二光接收元件控制MOSFET的阈值电压。

10. 发明申请

US20130193495A1 LIGHT RECEIVING CIRCUIT 有权
标题翻译：光接收电路
公开(公告)号：US20130193495A1
公开(公告)日：2013-08-01
申请号：US13601388
申请日：2012-08-31
申请人： Masayuki Sugizaki , Shigeyuki Sakura , Miki Hidaka , Hiroshi Shimomura
发明人： Masayuki Sugizaki , Shigeyuki Sakura , Miki Hidaka , Hiroshi Shimomura
IPC分类号： H01L31/02
CPC分类号： H01L31/02019 , H03F3/082
摘要： According to an embodiment, a light-receiving circuit includes a MOSFET, a first light-receiving element and a second light-receiving element. The first light-receiving element controls a state of the MOSFET between ON state and OFF state by applying a voltage induced by a light signal between a gate of the MOSFET and a source of the MOSFET; and a second light-receiving element controls a threshold voltage of the MOSFET.
摘要翻译：根据实施例，光接收电路包括MOSFET，第一光接收元件和第二光接收元件。第一光接收元件通过在MOSFET的栅极和MOSFET的源极之间施加由光信号感应的电压来控制MOSFET在导通状态和断开状态之间的状态; 并且第二光接收元件控制MOSFET的阈值电压。

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