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1. 发明授权

US5497029A Tin-indium antimonide infrared detector 失效
标题翻译：锑锡铱红外探测器
公开(公告)号：US5497029A
公开(公告)日：1996-03-05
申请号：US305516
申请日：1994-09-13
申请人： Katsuyoshi Fukuda , Fumio Nakata , Keitaro Shigenaka , Keijiro Hirahara
发明人： Katsuyoshi Fukuda , Fumio Nakata , Keitaro Shigenaka , Keijiro Hirahara
IPC分类号： H01L21/203 , C30B29/40 , H01L21/205 , H01L31/0304 , H01L31/09 , H01L31/10
CPC分类号： H01L31/09 , H01L31/0304 , Y02E10/544 , Y02P70/521
摘要： A compound semiconductor device suitable for an infrared ray detector comprises a substrate composed of indium antimonide (InSb), a first conductive layer deposited on the substrate and composed of tin-indium antimonide represented by the formula Sn.sub.x (InSb).sub.1-x, where 0.05.ltoreq.x.ltoreq.0.3, a second conductive layer that is a semiconductor region (active region) formed on the first conductive layer, and electrode provided on the second conductive layer, and a surface protective film formed on the first conductive layer except for the electrode portions.
摘要翻译：适用于红外线检测器的化合物半导体器件包括由铟锑化物（InSb）构成的衬底，沉积在衬底上并由式Snx（InSb）1-x表示的锡 - 铟锑化物组成的第一导电层，其中0.05 作为形成在第一导电层上的半导体区域（有源区域）的第二导电层和设置在第二导电层上的电极以及形成在第一导电层上的表面保护膜，除了用于电极部分。

2. 发明授权

US5729020A Hybrid type infrared detector 失效
标题翻译：混合型红外探测器
公开(公告)号：US5729020A
公开(公告)日：1998-03-17
申请号：US697447
申请日：1996-08-23
申请人： Keiichi Matsushita , Keitaro Shigenaka , Katsuyoshi Fukuda
发明人： Keiichi Matsushita , Keitaro Shigenaka , Katsuyoshi Fukuda
IPC分类号： H01L27/14 , H01L27/146 , H01L31/10 , H01L33/00
CPC分类号： H01L27/1465
摘要： The hybrid type infrared detector includes a plurality of photodiodes constructed by p-n junctions made of compound semiconductor material on a silicon substrate, a signal processing portion formed on another substrate, and a connecting member for electrically connecting the plurality of photodiodes with the signal processing portion, and for injecting carriers generated by the photodiodes into the signal processing portion, and is characterized in that partitioning portions are formed along the cleavage plane of the compound semiconductor material.
摘要翻译：混合型红外线检测器包括由硅衬底上的由化合物半导体材料制成的pn结构成的多个光电二极管，形成在另一衬底上的信号处理部分和用于将多个光电二极管与信号处理部分电连接的连接部件，并且用于将由光电二极管产生的载流子注入到信号处理部分中，并且其特征在于沿着化合物半导体材料的解理面形成分隔部分。

3. 发明授权

US5641973A Semiconductor piezoelectric photoelectric converting device and imaging device using such semiconductor photoelectric converting device 失效
标题翻译：半导体压电光电转换装置及使用该半导体光电转换装置的成像装置
公开(公告)号：US5641973A
公开(公告)日：1997-06-24
申请号：US527582
申请日：1995-09-13
申请人： Keitaro Shigenaka , Keiichi Matsushita , Katsuyoshi Fukuda
发明人： Keitaro Shigenaka , Keiichi Matsushita , Katsuyoshi Fukuda
IPC分类号： H01L27/14 , H01L27/148 , H01L31/032 , H01L31/00
CPC分类号： H01L37/00 , H01L27/148 , H01L31/032
摘要： A semiconductor photoelectric converting device and an imaging device using such semiconductor photoelectric converting devices are provided according to the present invention, the semiconductor photoelectric converting device including an electric charge transfer area provided in a surface portion of a semiconductor substrate and a light-receiving area formed of a piezoelectric material, electrically connected to the electric charge transfer area and provided in contact with the semiconductor substrate, in which electric charges generated by a piezoelectric effect produced by a strain resulting from heat evolved upon the falling of light onto the light-receiving area are conducted to the charge transfer area.
摘要翻译：根据本发明，提供一种半导体光电转换装置和使用这种半导体光电转换装置的成像装置，该半导体光电转换装置包括设置在半导体基板的表面部分中的电荷转移区域和形成的光接收区域压电材料电连接到电荷转移区域并且与半导体衬底接触地提供，其中由通过由光产生的应变产生的压电效应产生的电荷在光入射到光接收区域被传送到电荷转移区域。

4. 发明授权

US06790701B2 Method of manufacturing a multi-wavelength semiconductor image sensor 失效
标题翻译：制造多波长半导体图像传感器的方法
公开(公告)号：US06790701B2
公开(公告)日：2004-09-14
申请号：US10235491
申请日：2002-09-06
申请人： Keitaro Shigenaka , Fumio Nakata
发明人： Keitaro Shigenaka , Fumio Nakata
IPC分类号： H01L3300
CPC分类号： H01L31/1032 , H01L27/14652
摘要： A multi-wavelength semiconductor image sensor comprises a p-type Hg0.7Cd0.3Te photo-absorbing layer formed on a single crystal CdZnTe substrate, a CdTe isolation layer deposited on the photo-absorbing layer, a p-type Hg0.77Cd0.23Te photo-absorbing layer deposited on the CdTe isolation layer, n+ regions which are formed in these photo-absorbing layers and form a pn-junction with each of these photo-absorbing layers, an indium electrode connected to each of these n+ regions and a ground electrode connected to the photo-absorbing layer, the semiconductor isolation layer being electrically isolated from the photo-absorbing layer.
摘要翻译：多波长半导体图像传感器包括形成在单晶CdZnTe衬底上的p型Hg0.7Cd0.3Te光吸收层，沉积在光吸收层上的CdTe隔离层，p型Hg0.77Cd0.23Te 沉积在CdTe隔离层上的光吸收层，形成在这些光吸收层中并与这些光吸收层中的每一个形成pn结的n +区，与n < +区域和连接到光吸收层的接地电极，半导体隔离层与光吸收层电隔离。

5. 发明授权

US06465860B2 Multi-wavelength semiconductor image sensor and method of manufacturing the same 失效
标题翻译：多波长半导体图像传感器及其制造方法
公开(公告)号：US06465860B2
公开(公告)日：2002-10-15
申请号：US09386294
申请日：1999-08-31
申请人： Keitaro Shigenaka , Fumio Nakata
发明人： Keitaro Shigenaka , Fumio Nakata
IPC分类号： H01L310296
CPC分类号： H01L31/1032 , H01L27/14652
摘要： A multi-wavelength semiconductor image sensor comprises a p-type Hg0.7Cd0.3Te photo-absorbing layer formed on a single crystal CdZnTe substrate, a CdTe isolation layer deposited on the photo-absorbing layer, a p-type Hg0.7Cd0.23Te photo-absorbing layer deposited on the CdTe isolation layer, n+ regions which are formed in these photo-absorbing layers and form a pn-junction with each of these photo-absorbing layers, an indium electrode connected to each of these n+ regions and a ground electrode connected to the photo-absorbing layer, the semiconductor isolation layer being electrically isolated from the photo-absorbing layer.
摘要翻译：多波长半导体图像传感器包括形成在单晶CdZnTe衬底上的p型Hg0.7Cd0.3Te光吸收层，沉积在光吸收层上的CdTe隔离层，p型Hg0.7Cd0.23Te 沉积在CdTe隔离层上的光吸收层，形成在这些光吸收层中并与这些光吸收层中的每一个形成pn结的n +区，连接到这些n +区中的每一个的铟电极和地面电极连接到光吸收层，半导体隔离层与光吸收层电隔离。

6. 发明授权

US06700111B2 Multi-wavelength semiconductor image sensor 失效
标题翻译：多波长半导体图像传感器
公开(公告)号：US06700111B2
公开(公告)日：2004-03-02
申请号：US10235719
申请日：2002-09-06
申请人： Keitaro Shigenaka , Fumio Nakata
发明人： Keitaro Shigenaka , Fumio Nakata
IPC分类号： H01L2700
CPC分类号： H01L31/1032 , H01L27/14652
摘要： A multi-wavelength semiconductor image sensor comprises a p-type Hg0.7Cd0.3Te photo-absorbing layer formed on a single crystal CdZnTe substrate, a CdTe isolation layer deposited on the photo-absorbing layer, a p-type Hg0.77Cd0.23Te photo-absorbing layer deposited on the CdTe isolation layer, n+ regions which are formed in these photo-absorbing layers and form a pn-junction with each of these photo-absorbing layers, an indium electrode connected to each of these n+ regions and a ground electrode connected to the photo-absorbing layer, the semiconductor isolation layer being electrically isolated from the photo-absorbing layer.
摘要翻译：多波长半导体图像传感器包括形成在单晶CdZnTe衬底上的p型Hg0.7Cd0.3Te光吸收层，沉积在光吸收层上的CdTe隔离层，p型Hg0.77Cd0.23Te 沉积在CdTe隔离层上的光吸收层，形成在这些光吸收层中并与这些光吸收层中的每一个形成pn结的n +区，与n < +区域和连接到光吸收层的接地电极，半导体隔离层与光吸收层电隔离。

7. 发明申请

US20070028695A1 OPTO-ACOUSTOELECTRIC DEVICE AND METHODS FOR ANALYZING MECHANICAL VIBRATION AND SOUND 审中-公开
标题翻译：用于分析机械振动和声音的光电装置和方法
公开(公告)号：US20070028695A1
公开(公告)日：2007-02-08
申请号：US11534541
申请日：2006-09-22
申请人： Kazuhiro Suzuki , Hideyuki Funaki , Keitaro Shigenaka , Tomio Ono , Tadashi Sakai , Yujiro Naruse , Yoshinori Iida , Ikuo Fujiwara
发明人： Kazuhiro Suzuki , Hideyuki Funaki , Keitaro Shigenaka , Tomio Ono , Tadashi Sakai , Yujiro Naruse , Yoshinori Iida , Ikuo Fujiwara
IPC分类号： G01H9/00
CPC分类号： G01H9/00
摘要： An opto-acoustoelectric device encompasses a diaphragm having a diffraction grating, the diaphragm is susceptible to a vibration driven by an external force; a light source oriented to irradiate the diffraction grating; and a photo detector configured to detect the light diffracted by the diffraction grating and to convert the detected light into an electric signal. The electric signal corresponds to a displacement of the vibration in the diaphragm.
摘要翻译：光声装置包括具有衍射光栅的光阑，所述光阑易受外力驱动的振动; 定向成照射衍射光栅的光源; 以及光检测器，被配置为检测由衍射光栅衍射的光并将检测到的光转换成电信号。电信号对应于隔膜中振动的位移。

8. 发明授权

US07134343B2 Opto-acoustoelectric device and methods for analyzing mechanical vibration and sound 失效
标题翻译：光电装置及分析机械振动和声音的方法
公开(公告)号：US07134343B2
公开(公告)日：2006-11-14
申请号：US10895049
申请日：2004-07-21
申请人： Kazuhiro Suzuki , Hideyuki Funaki , Keitaro Shigenaka , Tomio Ono , Tadashi Sakai , Yujiro Naruse , Yoshinori Iida , Ikuo Fujiwara
发明人： Kazuhiro Suzuki , Hideyuki Funaki , Keitaro Shigenaka , Tomio Ono , Tadashi Sakai , Yujiro Naruse , Yoshinori Iida , Ikuo Fujiwara
IPC分类号： G01H9/00 , G01B11/16
CPC分类号： G01H9/00
摘要： An opto-acoustoelectric device encompasses a diaphragm having a diffraction grating, the diaphragm is susceptible to a vibration driven by an external force; a light source oriented to irradiate the diffraction grating; and a photo detector configured to detect the light diffracted by the diffraction grating and to convert the detected light into an electric signal. The electric signal corresponds to a displacement of the vibration in the diaphragm.
摘要翻译：光声装置包括具有衍射光栅的光阑，所述光阑易受外力驱动的振动; 定向成照射衍射光栅的光源; 以及光检测器，被配置为检测由衍射光栅衍射的光并将检测到的光转换成电信号。电信号对应于隔膜中振动的位移。

9. 发明申请

US20060231911A1 Method of manufacturing and image device 有权
标题翻译：制造方法和图像装置
公开(公告)号：US20060231911A1
公开(公告)日：2006-10-19
申请号：US11168423
申请日：2005-06-29
申请人： Sumio Ikegawa , Kohei Nakayama , Hideyuki Funaki , Yoshinori Iida , Keitaro Shigenaka
发明人： Sumio Ikegawa , Kohei Nakayama , Hideyuki Funaki , Yoshinori Iida , Keitaro Shigenaka
IPC分类号： H01L31/00
CPC分类号： H04N5/33 , G01J5/20 , G01J5/22 , G01J5/24 , G01J2005/202 , H01L27/16
摘要： An imaging device comprises a select line, a first signal line crossing the select line, and a first pixel provided at a portion corresponding to a crossing portion of the select line and the first signal line, the first pixel comprising a first buffer layer formed on a substrate, a first bolometer film formed on the first buffer layer, made of a compound which undergoes metal-insulator transition, and generating a first temperature detection signal, a first switching element formed on the substrate, selected by a select signal from the select line, and supplying the first temperature detection signal to the first signal line, and a metal wiring connecting a top surface of the first bolometer film to the first switching element.
摘要翻译：成像装置包括选择线，与选择线交叉的第一信号线和设置在与选择线和第一信号线的交叉部分对应的部分处的第一像素，第一像素包括形成在第一信号线上的第一缓冲层基板，形成在第一缓冲层上的第一测辐射热计薄膜，由经历金属 - 绝缘体转变的化合物制成，并产生第一温度检测信号，形成在基板上的第一开关元件，通过来自选择的选择信号选择并且将第一温度检测信号提供给第一信号线，以及将第一测辐射热计薄膜的顶表面连接到第一开关元件的金属布线。

10. 发明授权

US4868622A Semiconductor light-detecting device with alloyed isolating region 失效
标题翻译：具有合金隔离区域的半导体光检测装置
公开(公告)号：US4868622A
公开(公告)日：1989-09-19
申请号：US113069
申请日：1987-10-27
申请人： Keitaro Shigenaka
发明人： Keitaro Shigenaka
IPC分类号： H01L31/0264 , H01L27/146 , H01L31/08 , H01L31/10
CPC分类号： H01L27/14649 , Y10S257/926
摘要： A semiconductor light detecting device comprises a substrate, a first stacked layer of a first conductivity type formed on the substrate by alternately laminating a compound semimetal layer and a compound semiconductor layer repeatedly, a second stacked layer of a second conductivity type formed on the first stacked layer by alternately laminating the compound semimetal layer and the compound semiconductor layer repeatedly, and an isolation region formed by selectively irradiating the first and second stacked layers with an energy beam. A plurality of light detecting elements isolated from each other by the isolation region are formed on the substrate so as to provide the semiconductor light detecting device.
摘要翻译：半导体光检测装置包括：基板，通过交替地层叠复合半金属层和化合物半导体层而在基板上形成的第一导电类型的第一堆叠层，形成在第一堆叠上的第二导电类型的第二堆叠层通过重复地交替层叠化合物半金属层和化合物半导体层，以及通过用能量束选择性地照射第一层和第二层而形成的隔离区。在基板上形成由隔离区域彼此隔离的多个光检测元件，以提供半导体光检测装置。

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