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1. 发明申请

US20100012037A1 SUBSTRATE TRANSFER APPARATUS 审中-公开
标题翻译：基板传送装置
公开(公告)号：US20100012037A1
公开(公告)日：2010-01-21
申请号：US12503167
申请日：2009-07-15
申请人： Katsushi Kishimoto , Yusuke Fukuoka , Mitsuhiro Toyoda , Hiroyuki Tadokoro , Yusuke Ozaki
发明人： Katsushi Kishimoto , Yusuke Fukuoka , Mitsuhiro Toyoda , Hiroyuki Tadokoro , Yusuke Ozaki
IPC分类号： C23C16/54 , C23C16/513
CPC分类号： H01L21/67784
摘要： A substrate transfer apparatus comprising: a plurality of floating-transfer guide plates adjacent to each other with a space, each of guide plate having a plurality of floating gas ejecting holes; a gas supplying source for supplying a floating gas to the guide plates; a tray that is placed on one of the guide plates in order to mount a substrate to be transferred, and that is floated by the floating gas; and a transfer arm for transferring the floated tray to the adjacent other guide plate from the guide plate, wherein the tray includes a main body portion having both side edges parallel to a transfer direction of the tray, and an outward projecting portion that is formed so as to partially project outwardly from at least one of both side edges of the main body portion, and wherein the transfer arm is in contact and engaged with the outward projecting portion when the tray is transferred by the transfer arm.
摘要翻译：一种基板传送装置，包括：多个彼此相邻的浮动传送导向板，具有空间，每个导板具有多个浮动气体喷射孔; 用于将浮动气体供给到所述引导板的气体供给源; 托盘，其放置在一个导板上，以便安装待转印的基板，并由浮动气体漂浮; 以及用于将浮托盘从引导板传送到相邻的其他引导板的传送臂，其中托盘包括具有平行于托盘的传送方向的两个侧边缘的主体部分和形成为这样的向外突出部分从主体部分的两个侧边缘的至少一个边缘部分地向外突出，并且当托盘由传送臂传送时，传送臂与外伸部分接触并接合。

2. 发明申请

US20100034622A1 SUBSTRATE TRANSFER APPARATUS 审中-公开
标题翻译：基板传送装置
公开(公告)号：US20100034622A1
公开(公告)日：2010-02-11
申请号：US12535230
申请日：2009-08-04
申请人： Katsushi Kishimoto , Yusuke Fukuoka , Hiroyuki Tadokoro , Yusuke Ozaki
发明人： Katsushi Kishimoto , Yusuke Fukuoka , Hiroyuki Tadokoro , Yusuke Ozaki
IPC分类号： H01L21/673
CPC分类号： H01L21/67748 , H01L21/67784
摘要： A substrate transfer apparatus comprising: a plurality of floating-transfer guide plates adjacent to each other with a space therebetween, each of the guide plates having a substrate-placing surface on which a substrate is to be placed, and a plurality of floating-gas ejecting holes for floating the substrate with use of a gas; a gas supplying source for supplying the floating gas to the respective guide plates; and an arm for transferring the floated substrate from the guide plate, from which the substrate is to be transferred, to the adjacent guide plate to which the substrate is to be transferred, wherein the substrate-placing surface of the guide plate to which the substrate is to be transferred is situated lower than the substrate-placing surface of the guide plate from which the substrate is to be transferred.
摘要翻译：一种基板传送装置，包括：彼此相邻的多个浮动传送导向板，其间具有空间，每个导板具有其上将放置基板的基板放置表面，以及多个浮动导体排出用于使用气体漂浮基板的孔; 气体供给源，用于将浮动气体供给到各个导向板; 以及用于将浮动的基板从基板被转印的导向板传送到要被转印的基板的相邻引导板的臂，其中基板的基板放置表面与基板要被转印的位置低于从基板被转印的导向板的基板放置表面。

3. 发明申请

US20120219390A1 SUBSTRATE TRANSFER APPARATUS 审中-公开
标题翻译：基板传送装置
公开(公告)号：US20120219390A1
公开(公告)日：2012-08-30
申请号：US13462908
申请日：2012-05-03
申请人： Katsushi Kishimoto , Yusuke Fukuoka , Hiroyuki Tadokoro , Yusuke Ozaki
发明人： Katsushi Kishimoto , Yusuke Fukuoka , Hiroyuki Tadokoro , Yusuke Ozaki
IPC分类号： B65G65/00
CPC分类号： H01L21/67748 , H01L21/67784
摘要： A substrate transfer apparatus comprising: a plurality of floating-transfer guide plates adjacent to each other with a space therebetween, each of the guide plates having a substrate-placing surface on which a substrate is to be placed, and a plurality of floating-gas ejecting holes for floating the substrate with use of a gas; a gas supplying source for supplying the floating gas to the respective guide plates; and an arm for transferring the floated substrate from the guide plate, from which the substrate is to be transferred, to the adjacent guide plate to which the substrate is to be transferred, wherein the substrate-placing surface of the guide plate to which the substrate is to be transferred is situated lower than the substrate-placing surface of the guide plate from which the substrate is to be transferred.
摘要翻译：一种基板传送装置，包括：彼此相邻的多个浮动传送导向板，其间具有空间，每个导板具有其上将放置基板的基板放置表面，以及多个浮动导电板排出用于使用气体漂浮基板的孔; 气体供给源，用于将浮动气体供给到各个导向板; 以及用于将浮动的基板从基板被转印的导向板传送到要被转印的基板的相邻引导板的臂，其中基板的基板放置表面与基板要被转印的位置低于从基板被转印的导向板的基板放置表面。

4. 发明授权

US08137046B2 Substrate transfer apparatus and substrate transfer method 有权
标题翻译：基板转印装置和基板转印方法
公开(公告)号：US08137046B2
公开(公告)日：2012-03-20
申请号：US12536912
申请日：2009-08-06
申请人： Katsushi Kishimoto , Yusuke Fukuoka , Noriyoshi Kohama , Yusuke Ozaki
发明人： Katsushi Kishimoto , Yusuke Fukuoka , Noriyoshi Kohama , Yusuke Ozaki
IPC分类号： B65G35/00
CPC分类号： H01L21/67784 , H01L21/67748
摘要： A substrate transfer apparatus comprising: a plurality of floating-transfer guide plates adjacent to each other, each of guide plates having a plurality of floating gas ejecting holes; a gas supplying source; a tray to mount a substrate to be transferred, and that is floated by the floating gas; and a transfer arm for transferring the floated tray from the guide plate to the adjacent other guide plate, wherein the tray includes both side edges, and a contact/engagement portion formed at the respective both side edges for the transfer arm, each of the transfer arms including a base portion that can horizontally reciprocate along a rail provided so as to be parallel to the transfer direction, a guide portion provided to the base portion, that can horizontally reciprocate in a direction orthogonal to the transfer direction, and an arm portion provided to the guide portion, that can horizontally reciprocate in the direction parallel to the transfer direction.
摘要翻译：一种基板传送装置，包括：彼此相邻的多个浮动传送导向板，每个导板具有多个浮动气体喷射孔; 气体供应源; 用于安装待转移的基板并由浮动气体浮动的托盘; 以及用于将浮托盘从引导板传送到相邻的另一个引导板的传送臂，其中托盘包括两个侧边缘，以及形成在传送臂的相应两个侧边缘处的接触/接合部分，每个传送包括可沿着设置成平行于传送方向的轨道水平往复运动的基部的臂，设置在基部上的引导部，该引导部能够沿与传送方向正交的方向水平往复运动;以及臂部，导向部分能够沿平行于传送方向的方向水平往复运动。

5. 发明申请

US20110283623A1 VACUUM DEVICE 审中-公开
标题翻译：真空装置
公开(公告)号：US20110283623A1
公开(公告)日：2011-11-24
申请号：US13147466
申请日：2010-02-05
申请人： Yusuke Ozaki , Katsushi Kishimoto , Nobuyuki Tanigawa , Yusuke Fukuoka
发明人： Yusuke Ozaki , Katsushi Kishimoto , Nobuyuki Tanigawa , Yusuke Fukuoka
IPC分类号： E06B3/46 , E05F11/54 , E05D15/06
CPC分类号： C23C14/564
摘要： A vacuum chamber has an opening. A door is to close the opening. A first rail extends in a first direction with a space between the first rail and the opening when viewed in a planar view. Further, the first rail supports the door to be movable in the first direction. Further, the first rail has a portion facing the opening in a second direction crossing the first direction when viewed in a planar view. Furthermore, the first rail has a first movable portion movable in the second direction.
摘要翻译：真空室具有开口。门是关闭开口。当在平面视图中观察时，第一轨道在第一方向上延伸有第一轨道和开口之间的空间。此外，第一轨道支撑门能够沿第一方向移动。此外，当从平面视图观察时，第一轨道具有与第一方向交叉的第二方向上面向开口的部分。此外，第一轨道具有可沿第二方向移动的第一可移动部分。

6. 发明申请

US20110088849A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20110088849A1
公开(公告)日：2011-04-21
申请号：US12992327
申请日：2009-05-14
申请人： Katsushi Kishimoto , Yusuke Fukuoka
发明人： Katsushi Kishimoto , Yusuke Fukuoka
IPC分类号： C23F1/08 , C23C16/50
CPC分类号： C23C16/5096 , H05H1/2406 , H05H2001/2418
摘要： A plasma processing apparatus, comprising: a reaction chamber; a gas inlet portion that introduces a reactant gas into the reaction chamber; an exhaust portion that exhausts the reactant gas from said reaction chamber; at least three discharge portions respectively made up of first electrode and second electrode pairs, a first electrode and a second electrode constituting each one of the first electrode and second electrode pairs being disposed to oppose to each other inside said reaction chamber, so as to cause a plasma discharge in the reactant gas; a support portion that supports and parallels the first electrode and second electrode pairs in one of a horizontal manner and a vertical manner; and a power supply portion that supplies power to all of said discharge portions, wherein said power supply portion includes a high frequency generator and an amplifier that amplifies high frequency power from the high frequency generator to be supplied to the first electrodes, and a first electrode of one discharge portion out of said discharge portions and a first electrode of other discharge portion out of said discharge portions being adjacent to the one discharge portion are connected to an identical one of the high frequency generator respectively via separate ones of the amplifier, or respectively connected to separate ones of the high frequency generator via the amplifier, and the second electrodes of respective discharge portions are grounded.
摘要翻译：一种等离子体处理装置，包括：反应室; 将反应气体引入反应室的气体入口部; 从所述反应室排出反应气体的排气部; 分别由第一电极和第二电极对构成的至少三个放电部分，构成第一电极和第二电极对中的每一个的第一电极和第二电极在反应室内部彼此相对设置，从而使反应气体中的等离子体放电; 支撑部，其以水平方式和垂直方式之一支撑并平行第一电极和第二电极对; 以及向全部所述放电部供电的供电部，其特征在于，所述供电部包括高频发生器和放大来自所述高频发生器的供给所述第一电极的高频电力的放大器，以及第一电极所述放电部分中的一个放电部分和与所述一个放电部分相邻的所述放电部分中的另一个放电部分的第一电极分别经由所述放大器中的分别连接到所述高频发生器中的相同的一个，经由放大器连接到高频发生器的单独的一个，并且各个放电部分的第二电极接地。

7. 发明授权

US07540257B2 Plasma processing apparatus and semiconductor device manufactured by the same apparatus 失效
标题翻译：等离子体处理装置和由同一装置制造的半导体装置
公开(公告)号：US07540257B2
公开(公告)日：2009-06-02
申请号：US11328448
申请日：2006-01-10
申请人： Katsushi Kishimoto , Yusuke Fukuoka
发明人： Katsushi Kishimoto , Yusuke Fukuoka
IPC分类号： C23C16/00
CPC分类号： H01J37/32431
摘要： A plasma processing apparatus of this invention includes a sealable chamber to be introduced with reactive material gas, a plurality of pairs of cathode-anode bodies arranged in the chamber, for forming a plurality of discharge spaces for performing plasma discharge of the material gas, a power supply for plasma discharge, placed outside the chamber, a matching box placed outside the chamber, for matching impedance between the cathode-anode bodies and the power supply, and a power introduction wire extending to each of the cathodes from the power supply via the matching box. Herein, the power introduction wire is branched to the number corresponding to the number of the cathodes between the matching box and the cathodes, and the branched wires are symmetrically extended.
摘要翻译：本发明的等离子体处理装置包括能够引入反应性材料气体的可密封腔室，布置在腔室中的多对阴极 - 阳极体，用于形成用于进行材料气体的等离子体放电的多个放电空间; 用于等离子体放电的电源，放置在室外部，匹配盒放置在室外，用于匹配阴极 - 阳极体和电源之间的阻抗;以及功率引入线，其通过电源从电源延伸到每个阴极配套箱这里，功率引入线被分支到与匹配箱和阴极之间的阴极数相对应的数量，并且分支线对称地延伸。

8. 发明申请

US20060191480A1 Plasma processing apparatus and semiconductor device manufactured by the same apparatus 有权
标题翻译：等离子体处理装置和由同一装置制造的半导体装置
公开(公告)号：US20060191480A1
公开(公告)日：2006-08-31
申请号：US11328461
申请日：2006-01-10
申请人： Katsushi Kishimoto , Yusuke Fukuoka
发明人： Katsushi Kishimoto , Yusuke Fukuoka
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/3244
摘要： A plasma processing apparatus of this invention includes a sealable chamber, a gas supply source of reactive material gas, placed outside the chamber, a gas introduction pipe connected to the gas supply source, for introducing the material gas into the chamber, and a plurality of sets of cathode-anode bodies for forming a plurality of discharge spaces which perform plasma discharge of the material gas in the chamber. Herein, the gas introduction pipe includes a gas branch section arranged in the chamber, a main pipe for connecting the gas supply source to the gas branch section, and a plurality of branch pipes connected from the main pipe to each of the discharge spaces via the gas branch section. The branch pipes are configured so that conductances thereof are substantially equivalent to each other.
摘要翻译：本发明的等离子体处理装置包括：可密封室，反应性材料气体供应源，放置在室外;气体导入管，连接到气体供应源，用于将材料气体引入室;以及多个用于形成执行腔室中的原料气体的等离子体放电的多个放电空间的阴极 - 阳极体组。这里，气体引入管包括设置在室中的气体分支部，用于将气体供给源连接到气体分支部的主管，以及从主管经由主管连接到每个排出空间的多个分支管气支部。分支管构造成使得其电导基本上彼此相等。

9. 发明申请

US20050085003A1 Silicon-based thin-film photoelectric conversion device and method of manufacturing thereof 失效
公开(公告)号：US20050085003A1
公开(公告)日：2005-04-21
申请号：US10942958
申请日：2004-09-17
申请人： Katsushi Kishimoto , Yusuke Fukuoka , Katsuhiko Nomoto
发明人： Katsushi Kishimoto , Yusuke Fukuoka , Katsuhiko Nomoto
IPC分类号： H01L31/04 , H01L21/00 , H01L31/075 , H01L31/18
CPC分类号： H01L31/077 , H01L31/1824 , Y02E10/545 , Y02P70/521
摘要： An excellent silicon-based thin-film photoelectric conversion device is manufactured simply and efficiently at a low cost. Specifically, a method of manufacturing the silicon-based thin-film photoelectric conversion device including a p-type semiconductor layer, an i-type microcrystalline silicon-based photoelectric conversion layer and an n-type semiconductor layer deposited by plasma CVD includes the steps of: successively depositing the p-type semiconductor layer, the i-type microcrystalline silicon-based photoelectric conversion layer and the n-type semiconductor layer on a substrate within the same plasma CVD film deposition chamber; transferring the substrate out of the film deposition chamber; and subsequently to the step of depositing the p-type semiconductor layer, the i-type microcrystalline silicon-based photoelectric conversion layer and the n-type semiconductor layer, eliminating influences of remaining n-type impurities on a cathode and/or within the film deposition chamber.

10. 发明授权

US08389389B2 Semiconductor layer manufacturing method, semiconductor layer manufacturing apparatus, and semiconductor device manufactured using such method and apparatus 失效
标题翻译：半导体层制造方法，半导体层制造装置以及使用该方法和装置制造的半导体装置
公开(公告)号：US08389389B2
公开(公告)日：2013-03-05
申请号：US12521080
申请日：2007-12-05
申请人： Katsushi Kishimoto , Yusuke Fukuoka
发明人： Katsushi Kishimoto , Yusuke Fukuoka
IPC分类号： H01L21/20
CPC分类号： H01L21/02661 , C23C16/4408 , C23C16/45557 , H01L21/02532 , H01L21/02573 , H01L21/02592 , H01L21/02595 , H01L21/0262 , H01L31/0747 , H01L31/075 , H01L31/1804 , H01L31/1816 , H01L31/202 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： Provided are a semiconductor layer manufacturing method and a semiconductor manufacturing apparatus capable of forming a high quality semiconductor layer even by a single chamber system, with a shortened process time required for reducing a concentration of impurities that exist in a reaction chamber before forming the semiconductor layer. A semiconductor device manufactured using such a method and apparatus is also provided. The present invention relates to a semiconductor layer manufacturing method of forming a semiconductor layer inside a reaction chamber (101) capable of being hermetically sealed, including an impurities removing step of removing impurities inside the reaction chamber (101) using a replacement gas, and a semiconductor layer forming step of forming the semiconductor layer, the impurities removing step being a step in which a cycle composed of a replacement gas introducing step of introducing the replacement gas into the reaction chamber (101) and an exhausting step of exhausting the replacement gas is repeated a plurality of times, the impurities removing step being performed at least before the semiconductor layer forming step.
摘要翻译：提供了即使通过单室系统也能形成高质量半导体层的半导体层制造方法和半导体制造装置，在形成半导体层之前缩短反应室中存在的杂质浓度所需的缩短处理时间。还提供了使用这种方法和装置制造的半导体器件。本发明涉及一种半导体层制造方法，该半导体层制造方法在能够被气密密封的反应室（101）内部形成半导体层，其包括使用替换气体除去反应室（101）内的杂质的杂质除去步骤，以及形成半导体层的半导体层形成步骤，杂质除去步骤是将置换气体引入步骤构成的循环，将置换气体引入反应室（101）的排气步骤和排出置换气体的排气步骤的步骤是重复多次，至少在半导体层形成步骤之前进行杂质去除步骤。

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