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1. 发明授权

US07046392B2 Communication system and method, and storage medium for the system 有权
标题翻译：通信系统和方法，以及系统的存储介质
公开(公告)号：US07046392B2
公开(公告)日：2006-05-16
申请号：US09833989
申请日：2001-04-12
申请人： Tetsuya Shibata , Shigeki Nakahara , Tamotsu Shuto , Makoto Nakabayashi , Tsutomu Taniguchi , Katsumi Nagata
发明人： Tetsuya Shibata , Shigeki Nakahara , Tamotsu Shuto , Makoto Nakabayashi , Tsutomu Taniguchi , Katsumi Nagata
IPC分类号： G06F15/00
CPC分类号： H04N1/32448 , H04N1/21 , H04N1/32358
摘要： A communication system serving as a transmitter terminal and a receiver terminal for communications with a second communication system via a communication line, the communication system includes a storage section for data storage; a communication section for data communications, the communication section being adapted for reception and transmission of data and size information indicative of the size of the data with respect to the second communication system; a detection section for detecting a free space in the storage section; a comparing section for comparing the data size contained in the size information with the size of the free space in the storage section; a calculating section for, if the storage section is short of free space for accommodation of the data size, calculating a waiting period required for recovery from the shortage of the free space in the storage section; and a timer section for timing the lapse of the waiting period.
摘要翻译：一种用作发射机终端的通信系统和用于经由通信线路与第二通信系统通信的接收机终端，所述通信系统包括用于数据存储的存储部分; 用于数据通信的通信部分，所述通信部分适于接收和发送指示相对于第二通信系统的数据大小的数据和大小信息; 检测部，其检测所述存储部的自由空间; 比较部分，用于将包含在尺寸信息中的数据大小与存储部分中的自由空间的大小进行比较; 计算部，如果所述存储部分缺少用于容纳所述数据大小的可用空间，则计算从所述存储部分中的所述可用空间不足而要求恢复的等待期; 以及用于对等待时间的过去进行定时的定时器部分。

2. 发明授权

US06359697B1 Facsimile machine 失效
标题翻译：传真机
公开(公告)号：US06359697B1
公开(公告)日：2002-03-19
申请号：US09141372
申请日：1998-08-27
申请人： Katsumi Nagata , Tamotsu Shuto , Shigeki Nakahara , Tetsuya Shibata
发明人： Katsumi Nagata , Tamotsu Shuto , Shigeki Nakahara , Tetsuya Shibata
IPC分类号： B41B1308
CPC分类号： H04N1/32074 , H04N1/32037 , H04N1/327 , H04N1/32797
摘要： A conventional facsimile machine re-dials by using another telephone line after an elapse of a predetermined period of time since when a communication error after a line connection has occurred, so that it takes a predetermined period of time to re-dial by using the other telephone line, and hence a receiving end may receive data transmitted from another facsimile machine during this period. In order to prevent that, a facsimile machine of the present invention comprises: a plurality of line connecting means, each of which has a telephone line for transmitting/receiving data; a line selecting section for selecting a telephone line to be used when a plurality of telephone lines are connected; and an auto-dial sending section for changing over the telephone line currently selected by the line selecting section to another telephone line so as to make a call immediately, when the receiving end is busy.
摘要翻译：传统的传真机在从线路连接发生之后的通信错误发生之后经过预定时间段之后通过使用另一条电话线重新拨号，从而需要预定的时间来重新拨号因此接收端可以在此期间接收从另一传真机发送的数据。为了防止这种情况，本发明的传真机包括：多个线路连接装置，每个线路连接装置具有用于发送/接收数据的电话线; 线路选择部分，用于选择当多个电话线路连接时要使用的电话线路; 以及自动拨号发送部分，用于当线路选择部分当前选择的电话线路切换到另一条电话线路时，以便在接收端忙时立即进行呼叫。

3. 发明授权

US5787288A Method and device for renewing an internal program of an apparatus having communication capability 失效
标题翻译：用于更新具有通信能力的装置的内部程序的方法和装置
公开(公告)号：US5787288A
公开(公告)日：1998-07-28
申请号：US333170
申请日：1994-11-02
申请人： Katsumi Nagata , Masahiro Inoue , Hiroaki Nakamura , Tetsuya Shibata
发明人： Katsumi Nagata , Masahiro Inoue , Hiroaki Nakamura , Tetsuya Shibata
IPC分类号： G06F13/00 , G06F9/445 , H04N1/00 , H04N1/32 , G06F7/00 , G06F9/00
CPC分类号： H04N1/32561 , G06F8/65 , H04N2201/0074
摘要： A method and device for renewing an internal program of an apparatus capable of communication with a central station operable to transmit a new apparatus control program. It is determined whether data received from the central station is a new program. Replacement is then executed of a previously stored program with the new program, if a new program is received. A previously stored internal program is automatically overwritten by a new program transmitted from the central station.
摘要翻译：一种用于更新能够与可操作以发送新的装置控制程序的中央站通信的装置的内部程序的方法和装置。确定从中心站接收的数据是否是新程序。如果接收到新程序，则用新程序执行先前存储的程序的替换。先前存储的内部程序将被从中央站发送的新程序自动覆盖。

4. 发明授权

US08279133B2 Antenna device 失效
标题翻译：天线设备
公开(公告)号：US08279133B2
公开(公告)日：2012-10-02
申请号：US12712503
申请日：2010-02-25
申请人： Hideaki Shimoda , Tetsuya Shibata , Kei Suzuki
发明人： Hideaki Shimoda , Tetsuya Shibata , Kei Suzuki
IPC分类号： H01Q1/50 , H01Q1/38
CPC分类号： H01Q1/38 , H01Q1/243 , H01Q9/42
摘要： An antenna device is provided with an antenna element including a base, an inductance adjustment pattern that is formed on the upper surface and a side surface of the base and has a substantially U-shape, a capacitance adjustment pattern that is formed on the upper surface of the base and is placed to face the inductance adjustment pattern, and first to third terminal electrodes provided on the bottom surface of the base. The antenna element is installed between the first side and the second side of the ground pattern that form the two facing sides of the antenna mounting region. One end of the inductance adjustment pattern is connected to the feed line, the other end of the inductance adjustment pattern is connected to the first side of the ground pattern, and the third terminal electrode is connected to the second side of the ground pattern.
摘要翻译：天线装置设置有天线元件，天线元件包括基座，电感调节图案，其形成在基座的上表面和侧面，并具有大致U形;电容调整图案，形成在上表面并且被放置成面对电感调节图案，以及设置在基座的底表面上的第一至第三端子电极。天线元件安装在形成天线安装区域的两个相对侧的接地图案的第一侧和第二侧之间。电感调整图案的一端连接到馈电线，电感调节图案的另一端连接到接地图案的第一侧，并且第三端子电极连接到接地图案的第二侧。

5. 发明申请

US20120199827A1 THIN-FILM TRANSISTOR CIRCUIT SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管电路基板及其制造方法
公开(公告)号：US20120199827A1
公开(公告)日：2012-08-09
申请号：US13329545
申请日：2011-12-19
申请人： Tetsuya Shibata , Hajime Watakabe , Atsushi Sasaki , Yuki Matsuura , Muneharu Akiyoshi , Hiroyuki Watanabe
发明人： Tetsuya Shibata , Hajime Watakabe , Atsushi Sasaki , Yuki Matsuura , Muneharu Akiyoshi , Hiroyuki Watanabe
IPC分类号： H01L29/786 , H01L21/34
CPC分类号： H01L27/1225 , H01L29/66969 , H01L29/78606 , H01L29/7869
摘要： According to one embodiment, a method of manufacturing a thin-film transistor circuit substrate including forming an oxide semiconductor thin film above an insulative substrate, forming a gate insulation film and a gate electrode which are stacked on a first region of the oxide semiconductor thin film, and exposing from the gate insulation film a second region and a third region of the oxide semiconductor thin film, the second region and the third region being located on both sides of the first region of the oxide semiconductor thin film, forming an interlayer insulation film of silicon nitride including dangling bonds of silicon, the interlayer insulation film covering the second region and the third region of the oxide semiconductor thin film, the gate insulation film and the gate electrode, and forming a source electrode and a drain electrode.
摘要翻译：根据一个实施例，制造薄膜晶体管电路衬底的方法包括在绝缘衬底上形成氧化物半导体薄膜，形成栅极绝缘膜和栅电极，所述栅极绝缘膜和栅电极层叠在氧化物半导体薄膜的第一区域上并且从所述栅极绝缘膜暴露所述氧化物半导体薄膜的第二区域和第三区域，所述第二区域和所述第三区域位于所述氧化物半导体薄膜的所述第一区域的两侧，形成层间绝缘膜包括硅的悬挂键，覆盖第二区域的层间绝缘膜和氧化物半导体薄膜的第三区域，栅极绝缘膜和栅电极，以及形成源电极和漏电极。

6. 发明授权

US07981809B2 Film formation method and apparatus for semiconductor process 有权
标题翻译：用于半导体工艺的成膜方法和装置
公开(公告)号：US07981809B2
公开(公告)日：2011-07-19
申请号：US11298607
申请日：2005-12-12
申请人： Tetsuya Shibata , Yutaka Takahashi , Kota Umezawa , Masahiko Tomita
发明人： Tetsuya Shibata , Yutaka Takahashi , Kota Umezawa , Masahiko Tomita
IPC分类号： H01L21/31
CPC分类号： H01L21/0214 , H01L21/02332 , H01L21/3144
摘要： A film formation method for a semiconductor process for forming a silicon oxynitride film on a target substrate within a reaction chamber includes a step of performing a pre-process on members inside the reaction chamber without the target substrate loaded therein, and a step of then forming a silicon oxynitride film on the target substrate within the reaction chamber. The pre-process is arranged to supply a pre-process gas containing a nitriding gas or oxynitriding gas into the reaction chamber, and setting an interior of the reaction chamber at a first temperature and a first pressure.
摘要翻译：用于在反应室内的目标基板上形成氧氮化硅膜的半导体工艺的成膜方法包括对反应室内的构件进行预处理而不在其内装载目标衬底的步骤，然后形成步骤反应室内目标衬底上的氮氧化硅膜。预处理设置为将含有氮化气体或氮氧化气体的预处理气体供应到反应室中，并将反应室的内部设置在第一温度和第一压力。

7. 发明授权

US07879397B2 Method for processing polysilazane film 有权
标题翻译：聚硅氮烷薄膜的加工方法
公开(公告)号：US07879397B2
公开(公告)日：2011-02-01
申请号：US11987134
申请日：2007-11-27
申请人： Masahisa Watanabe , Tetsuya Shibata
发明人： Masahisa Watanabe , Tetsuya Shibata
IPC分类号： C23C16/00 , B05D3/00 , B05D3/02 , B05D3/04
CPC分类号： H01L21/316 , H01L21/02164 , H01L21/0217 , H01L21/02222 , H01L21/02282 , H01L21/02326 , H01L21/02337 , H01L21/31058 , H01L21/3125 , H01L21/76826 , H01L21/76828
摘要： A method for processing a polysilazane film includes performing temperature increase of changing a process field of a reaction container, which accommodates a target substrate with a polysilazane coating film formed thereon, from a pre-heating temperature to a predetermined temperature, while setting the process field to be a first atmosphere containing oxygen and having a first pressure of 6.7 to 26.7 kPa. Then, the method includes performing a first heat process for obtaining an insulating film containing silicon and oxygen by baking the coating film at a first process temperature not lower than the predetermined temperature, while setting the process field to be a second atmosphere containing an oxidizing gas and having a second pressure higher than the first pressure.
摘要翻译：一种加工聚硅氮烷薄膜的方法包括：将设置在其上的聚硅氮烷涂膜的目标基板的反应容器的处理区域从预热温度改变到预定温度，同时设定处理场成为含有氧并且具有6.7至26.7kPa的第一压力的第一气氛。然后，该方法包括通过在不低于预定温度的第一工艺温度下烘烤涂膜来进行第一热处理，以获得含有硅和氧的绝缘膜，同时将工艺场设定为含有氧化气体的第二气氛并且具有高于第一压力的第二压力。

8. 发明申请

US20100240854A1 PRE-EXPANDED POLYPROPYLENE RESIN PARTICLE, AND METHOD FOR PRODUCTION THEREOF 有权
标题翻译：预扩展聚丙烯树脂颗粒及其生产方法
公开(公告)号：US20100240854A1
公开(公告)日：2010-09-23
申请号：US12680770
申请日：2008-09-29
申请人： Tetsuya Minami , Tetsuya Shibata , Hidekazu Oohara
发明人： Tetsuya Minami , Tetsuya Shibata , Hidekazu Oohara
IPC分类号： C08F110/06 , B29B9/16
CPC分类号： C08J9/18 , B29C44/3461 , C08J9/0061 , C08J2203/06 , C08J2203/14 , C08J2323/12 , C08J2423/00
摘要： A pre-expanded polypropylene resin particle can be produced in the following manner: a polypropylene resin particle produced by an under water cut method, water, a dispersing agent, and a foaming agent are charged in a pressure-resistant container, the resulting mixture is heated to a temperature equal to or higher than the softening temperature of the polypropylene resin particle to allow the polypropylene resin particle to be impregnated with the foaming agent under pressure, and the resulting product is released into the atmosphere having a pressure lower than the pressure of the inside of the pressure-resistant container. As the polypropylene resin composition, a composition is used which comprises 100 parts by weight of a polypropylene resin and 1 to 20 parts by weight of a polyethylene resin having a melt viscosity of 10 to 2000 mPa·s at 140° C., whereby it becomes possible to reduce the pressure of a heated molding vapor required for producing an in-mold expanded molding product having a fusion rate of 75% or higher.
摘要翻译：可以如下制造预发泡聚丙烯树脂颗粒：将通过水切割法制造的聚丙烯树脂颗粒，水，分散剂和发泡剂装入耐压容器中，得到的混合物为加热到等于或高于聚丙烯树脂颗粒的软化温度的温度，以使聚丙烯树脂颗粒在压力下浸渍发泡剂，并将所得产物释放到压力低于耐压容器的内部。作为聚丙烯树脂组合物，使用包含100重量份聚丙烯树脂和1〜20重量份在140℃下熔融粘度为10〜2000mPa·s的聚乙烯树脂的组合物，由此其可以降低制造熔融率为75％以上的模内发泡成型体所需的加热成型蒸气的压力。

9. 发明申请

US20090263975A1 FILM FORMATION METHOD AND APPARATUS FOR FORMING SILICON-CONTAINING INSULATING FILM DOPED WITH METAL 有权
标题翻译：用于形成含金属的含硅绝缘膜的膜形成方法和装置
公开(公告)号：US20090263975A1
公开(公告)日：2009-10-22
申请号：US12417939
申请日：2009-06-09
申请人： Kentaro KADONAGA , Yamato Tonegawa , Pao-Hwa Chou , Kazuhide Hasebe , Tetsuya Shibata
发明人： Kentaro KADONAGA , Yamato Tonegawa , Pao-Hwa Chou , Kazuhide Hasebe , Tetsuya Shibata
IPC分类号： H01L21/31 , B05C11/00
CPC分类号： H01L21/3185 , H01L21/02145 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02274 , H01L21/28282 , H01L21/31612 , H01L29/792
摘要： A film formation method for a semiconductor process performs a film formation process to form a silicon-containing insulating film doped with a metal on a target substrate, in a process field inside a process container configured to be selectively supplied with a silicon source gas and a metal source gas. The method includes forming a first insulating thin layer by use of a chemical reaction of the silicon source gas, while maintaining a shut-off state of supply of the metal source gas; then, forming a first metal thin layer by use of a chemical reaction of the metal source gas, while maintaining a shut-off state of supply of the silicon source gas; and then, forming a second insulating thin layer by use of the chemical reaction of the silicon source gas, while maintaining a shut-off state of supply of the metal source gas.
摘要翻译：半导体工艺的成膜方法在被配置为选择性地供应有硅源气体的处理容器内的处理场中进行成膜处理，以在目标衬底上形成掺杂有金属的含硅绝缘膜，金属源气体。该方法包括通过利用硅源气体的化学反应形成第一绝缘薄层，同时保持金属源气体的切断状态; 然后通过使用金属源气体的化学反应形成第一金属薄层，同时保持硅源气体的供应关闭状态; 然后通过利用硅源气体的化学反应形成第二绝缘薄层，同时保持金属源气体的截止供应状态。

10. 发明申请

US20080139001A1 Method for processing polysilazane film 有权
标题翻译：聚硅氮烷薄膜的加工方法
公开(公告)号：US20080139001A1
公开(公告)日：2008-06-12
申请号：US11987134
申请日：2007-11-27
申请人： Masahisa Watanabe , Tetsuya Shibata
发明人： Masahisa Watanabe , Tetsuya Shibata
IPC分类号： H01L21/31
CPC分类号： H01L21/316 , H01L21/02164 , H01L21/0217 , H01L21/02222 , H01L21/02282 , H01L21/02326 , H01L21/02337 , H01L21/31058 , H01L21/3125 , H01L21/76826 , H01L21/76828
摘要： A method for processing a polysilazane film includes performing temperature increase of changing a process field of a reaction container, which accommodates a target substrate with a polysilazane coating film formed thereon, from a pre-heating temperature to a predetermined temperature, while setting the process field to be a first atmosphere containing oxygen and having a first pressure of 6.7 to 26.7 kPa. Then, the method includes performing a first heat process for obtaining an insulating film containing silicon and oxygen by baking the coating film at a first process temperature not lower than the predetermined temperature, while setting the process field to be a second atmosphere containing an oxidizing gas and having a second pressure higher than the first pressure.
摘要翻译：一种加工聚硅氮烷薄膜的方法包括：将设置在其上的聚硅氮烷涂膜的目标基板的反应容器的处理区域从预热温度改变到预定温度，同时设定处理场成为含有氧并且具有6.7至26.7kPa的第一压力的第一气氛。然后，该方法包括通过在不低于预定温度的第一工艺温度下烘烤涂膜来进行第一热处理，以获得含有硅和氧的绝缘膜，同时将工艺场设定为含有氧化气体的第二气氛并且具有高于第一压力的第二压力。

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