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1. 发明授权

US6155673A Recording method and apparatus for controlling ejection bubble formation 失效
标题翻译：用于控制喷射气泡形成的记录方法和装置
公开(公告)号：US6155673A
公开(公告)日：2000-12-05
申请号：US99396
申请日：1993-07-30
申请人： Kazuhiro Nakajima , Masanori Takenouchi , Toshiharu Inui , Yoshihisa Takizawa , Masashi Miyagawa , Hisao Yaegashi , Katsuhiro Shirota , Norio Ohkuma , Akira Asai
发明人： Kazuhiro Nakajima , Masanori Takenouchi , Toshiharu Inui , Yoshihisa Takizawa , Masashi Miyagawa , Hisao Yaegashi , Katsuhiro Shirota , Norio Ohkuma , Akira Asai
IPC分类号： B41J2/14 , B41J2/05
CPC分类号： B41J2/14056 , B41J2/1404 , B41J2/14112 , B41J2002/14169 , B41J2002/14185 , B41J2002/14379 , B41J2002/14387 , B41J2202/11
摘要： A liquid jet recording method includes applying thermal energy to liquid in a liquid passage to produce film boiling of the liquid to produce a bubble; permitting the bubble to communicate with ambience; wherein the liquid passage is not blocked in the communicating step.
摘要翻译：液体喷射记录方法包括向液体通道中的液体施加热能以产生液体的沸腾以产生气泡; 允许泡沫与氛围通信; 其中在通信步骤中液体通道不被阻挡。

2. 发明授权

US06076919A Jet recording method 失效
标题翻译：喷射记录方法
公开(公告)号：US06076919A
公开(公告)日：2000-06-20
申请号：US425769
申请日：1995-04-20
申请人： Katsuhiro Shirota , Masanori Takenouchi , Akira Asai , Hisao Yaegashi , Norio Ohkuma , Yoshihisa Takizawa , Toshiharu Inui , Kazuhiro Nakajima , Masashi Miyagawa
发明人： Katsuhiro Shirota , Masanori Takenouchi , Akira Asai , Hisao Yaegashi , Norio Ohkuma , Yoshihisa Takizawa , Toshiharu Inui , Kazuhiro Nakajima , Masashi Miyagawa
IPC分类号： B41J2/05
CPC分类号： B41J2/0458 , B41J2/04588 , B41J2/04598
摘要： In a jet recording method, a recording material is placed in a path defined by a nozzle leading to an ejection outlet, and then heated by actuating a heater disposed within the nozzle to generate a bubble within the recording material, thus ejecting a droplet of the recording material out of the ejection outlet under the action of the bubble to be attached onto recording paper. As improvement, the recording material is pre-heated by actuating the heater before the heating for generating the bubble, and the generated bubble is caused to communicate with ambience. As a result, the ejection of the recording material droplet is stabilized without causing splash or mist.
摘要翻译：在喷墨记录方法中，将记录材料放置在由通向喷射出口的喷嘴限定的路径中，然后通过致动设置在喷嘴内的加热器来加热，以在记录材料内产生气泡，从而喷射液滴在气泡的作用下将记录材料从喷射出口排出以附着在记录纸上。作为改进，通过在用于产生气泡的加热之前致动加热器来预先记录材料，并且使所产生的气泡与气氛通信。结果，记录材料液滴的喷射稳定而不引起飞溅或雾气。

3. 发明授权

US06488364B1 Recording method and apparatus for controlling ejection bubble formation 失效
标题翻译：用于控制喷射气泡形成的记录方法和装置
公开(公告)号：US06488364B1
公开(公告)日：2002-12-03
申请号：US09615933
申请日：2000-07-13
申请人： Kazuhiro Nakajima , Masanori Takenouchi , Toshiharu Inui , Yoshihisa Takizawa , Masashi Miyagawa , Hisao Yaegashi , Katsuhiro Shirota , Norio Ohkuma , Akira Asai
发明人： Kazuhiro Nakajima , Masanori Takenouchi , Toshiharu Inui , Yoshihisa Takizawa , Masashi Miyagawa , Hisao Yaegashi , Katsuhiro Shirota , Norio Ohkuma , Akira Asai
IPC分类号： B41J205
CPC分类号： B41J2/14056 , B41J2/1404 , B41J2/14112 , B41J2002/14169 , B41J2002/14185 , B41J2002/14379 , B41J2002/14387 , B41J2202/11
摘要： A liquid jet recording method includes applying thermal energy to liquid in a liquid passage to produce film boiling of the liquid to produce a. bubble; permitting the bubble to communicate with ambience; wherein the liquid passage is not blocked in the communicating step.
摘要翻译：液体喷射记录方法包括向液体通道中的液体施加热能以产生液体的薄膜沸腾以产生a。泡沫; 允许泡沫与氛围通信; 其中在通信步骤中液体通道不被阻挡。

4. 发明授权

US08796320B2 1,3,4-Oxadiazole-2-carboxamide compound 有权
标题翻译： 1,3,4-恶二唑-2-甲酰胺化合物
公开(公告)号：US08796320B2
公开(公告)日：2014-08-05
申请号：US13519707
申请日：2010-12-28
申请人： Akira Asai , Kenji Matsuno , Naohisa Ogo , Osamu Takahashi , Yoshiaki Masuda , Ayumu Muroya , Yasuto Akiyama , Tadashi Ashizawa , Tadashi Okawara
发明人： Akira Asai , Kenji Matsuno , Naohisa Ogo , Osamu Takahashi , Yoshiaki Masuda , Ayumu Muroya , Yasuto Akiyama , Tadashi Ashizawa , Tadashi Okawara
IPC分类号： A61K31/4245 , C07D271/10 , C07D413/14
CPC分类号： C07D413/04 , C07D413/14 , C07D417/14 , C07D487/04 , C07D498/04 , C07D513/04
摘要： Provided is a 1,3,4-oxadiazole-2-carboxamide compound which has STAT3 inhibitory activity and is useful as an anticancer agent. Provided is a 1,3,4-oxadiazole-2-carboxamide compound represented by formula (I) or a pharmacologically acceptable salt thereof (in the formula, Ar represents a furyl group or the like; R1 represents a hydrogen atom or the like; and —X—Y represents a diaryl group such as a biphenyl group).
摘要翻译：提供具有STAT3抑制活性并可用作抗癌剂的1,3,4-恶二唑-2-甲酰胺化合物。提供由式（I）表示的1,3,4-恶二唑-2-甲酰胺化合物或其药学上可接受的盐（在该式中，Ar表示呋喃基等; R 1表示氢原子等; -X-Y表示二苯基等二芳基）。

5. 发明申请

US20080015828A1 OPTIMUM DESIGN METHOD AND APPARATUS, AND PROGRAM FOR THE SAME 失效
标题翻译：最佳设计方法和设备及其相关程序
公开(公告)号：US20080015828A1
公开(公告)日：2008-01-17
申请号：US11778367
申请日：2007-07-16
申请人： Teruyoshi Washizawa , Akira Asai , Masayoshi Tachihara , Katsuhiko Sinjo , Nobuhiro Yoshikawa
发明人： Teruyoshi Washizawa , Akira Asai , Masayoshi Tachihara , Katsuhiko Sinjo , Nobuhiro Yoshikawa
IPC分类号： G06F17/10
CPC分类号： G06F17/11
摘要： In an optimum design method comprising a first solution determining step of solving an optimization problem of a first evaluation function for a state variable vector with a design variable vector being as a parameter, and a second solution determining step of solving an optimization problem of a second evaluation function for the design variable vector and the state variable vector thus obtained, the second solution determining step includes the steps of computing a gradient vector of the second evaluation function for the design variable vector, computing a first coefficient based on a value of a norm of the gradient vector, computing a search vector based on the first coefficient, computing a second coefficient, and updating the design variable vector based on the second coefficient. The second coefficient computing step includes the first solution determining step, the first solution determining step is executed as an iterative method based on the gradient vector, and the state variable vector is not initialized during iteration. The optimum design method is precisely adaptable for structural changes.
摘要翻译：一种最优设计方法，包括：第一解决方案确定步骤，用于以设计变量向量作为参数来求解用于状态变量向量的第一评估函数的优化问题;以及第二解决方案确定步骤，用于求解第二第二解决方案确定步骤包括以下步骤：计算用于设计变量向量的第二评估函数的梯度向量，基于规范的值计算第一系数;对于设计变量向量和状态变量向量的评估函数，的梯度向量，基于第一系数计算搜索向量，计算第二系数，并且基于第二系数更新设计变量向量。第二系数计算步骤包括第一解决方案确定步骤，基于梯度向量作为迭代方法执行第一解决方案确定步骤，并且在迭代期间不初始化状态变量向量。最佳设计方法适用于结构变化。

6. 发明授权

US07049198B2 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07049198B2
公开(公告)日：2006-05-23
申请号：US10377771
申请日：2003-03-04
申请人： Koichiro Yuki , Tohru Saitoh , Minoru Kubo , Kiyoshi Ohnaka , Akira Asai , Koji Katayama
发明人： Koichiro Yuki , Tohru Saitoh , Minoru Kubo , Kiyoshi Ohnaka , Akira Asai , Koji Katayama
IPC分类号： H01L21/00
CPC分类号： H01L21/26506 , H01L21/2658 , H01L29/1054 , H01L29/165 , H01L29/167
摘要： An S1-yGey layer (where 0
摘要翻译：按照此顺序形成S 1〜Y Ge层（其中0

7. 发明申请

US20050087803A1 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050087803A1
公开(公告)日：2005-04-28
申请号：US10997127
申请日：2004-11-24
申请人： Yoshihiro Hara , Akira Asai , Gaku Sugahara , Haruyuki Sorada , Teruhito Ohnishi
发明人： Yoshihiro Hara , Akira Asai , Gaku Sugahara , Haruyuki Sorada , Teruhito Ohnishi
IPC分类号： H01L21/762 , H01L21/8234 , H01L29/10 , H01L27/01 , H01L27/12 , H01L29/06 , H01L29/76 , H01L31/062
CPC分类号： H01L29/1054 , H01L21/76224 , H01L21/823481 , Y10S438/933
摘要： On an Si substrate 1, a buffer layer 2, a SiGe layer 3, and an Si cap layer 4 are formed. A mask is formed on the substrate, and then the substrate is patterned. In this manner, a trench 7a is formed so as to reach the Si substrate 1 and have the side faces of the SiGe layer 3 exposed. Then, the surface of the trench 7a is subjected to heat treatment for one hour at 750° C. so that Ge contained in a surface portion of the SiGe layer 3 is evaporated. Thus, a Ge evaporated portion 8 having a lower Ge content than that of other part of the SiGe layer 3 is formed in part of the SiGe layer 3 exposed at part of the trench 7a. Thereafter, the walls of the trench 7a are oxidized.
摘要翻译：在Si衬底1上形成缓冲层2，SiGe层3和Si覆盖层4。在基板上形成掩模，然后对基板进行图案化。以这种方式，形成沟槽7a以到达Si衬底1并且暴露SiGe层3的侧面。然后，将沟槽7a的表面在750℃下进行1小时的热处理，使得包含在SiGe层3的表面部分中的Ge蒸发。因此，在沟槽7a的一部分暴露的SiGe层3的一部分，形成Ge含量低于SiGe层3的Ge含量低的Ge蒸发部分8。此后，沟槽7a的壁被氧化。

8. 发明授权

US06867107B2 Variable capacitance device and process for manufacturing the same 失效
标题翻译：可变电容器件及其制造方法
公开(公告)号：US06867107B2
公开(公告)日：2005-03-15
申请号：US10456531
申请日：2003-06-09
申请人： Akira Asai , Teruhito Ohnishi
发明人： Akira Asai , Teruhito Ohnishi
IPC分类号： H01L21/329 , H01L21/84 , H01L27/12 , H01L29/93 , H01L21/20
CPC分类号： H01L29/66174 , H01L21/84 , H01L27/1203 , H01L29/93
摘要： A variable capacitance device comprising, in a semiconductor layer formed on a substrate via an buried oxide film: an n− region 132 formed in the shape of a ring and containing an n-type dopant; an anode 133 adjoined to the outer periphery of the n− region 132, the anode 133 being formed in the shape of a ring and containing a p-type dopant; and a cathode 131 adjoined to the inner periphery of the n− region 132, the third region containing an n-type dopant, wherein the dopant concentration in the n− region 132 is lower than that in each of the anode 133 and the cathode 131.
摘要翻译：一种可变静电电容器件，包括：通过掩埋氧化膜形成在衬底上的半导体层：形成为环形并包含n型掺杂剂的n区132; 邻接于n-区132的外周的阳极133，阳极133形成为环状并含有p型掺杂剂; 以及与n区132的内周相邻的阴极131，所述第三区包含n型掺杂剂，其中所述n区132中的掺杂剂浓度低于阳极133和阴极131中的掺杂浓度。

9. 发明授权

US06861316B2 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06861316B2
公开(公告)日：2005-03-01
申请号：US10637212
申请日：2003-08-08
申请人： Yoshihiro Hara , Akira Asai , Gaku Sugahara , Haruyuki Sorada , Teruhito Ohnishi
发明人： Yoshihiro Hara , Akira Asai , Gaku Sugahara , Haruyuki Sorada , Teruhito Ohnishi
IPC分类号： H01L21/762 , H01L21/8234 , H01L29/10 , H01L21/336
CPC分类号： H01L29/1054 , H01L21/76224 , H01L21/823481 , Y10S438/933
摘要： On an Si substrate 1, a buffer layer 2, a SiGe layer 3, and an Si cap layer 4 are formed. A mask is formed on the substrate, and then the substrate is patterned. In this manner, a trench 7a is formed so as to reach the Si substrate 1 and have the side faces of the SiGe layer 3 exposed. Then, the surface of the trench 7a is subjected to heat treatment for one hour at 750° C. so that Ge contained in a surface portion of the SiGe layer 3 is evaporated. Thus, a Ge evaporated portion 8 having a lower Ge content than that of other part of the SiGe layer 3 is formed in part of the SiGe layer 3 exposed at part of the trench 7a. Thereafter, the walls of the trench 7a are oxidized.
摘要翻译：在Si衬底1上形成缓冲层2，SiGe层3和Si覆盖层4。在基板上形成掩模，然后对基板进行图案化。以这种方式，形成沟槽7a以到达Si衬底1并且暴露SiGe层3的侧面。然后，将沟槽7a的表面在750℃下进行1小时的热处理，使得包含在SiGe层3的表面部分中的Ge蒸发。因此，在沟槽7a的一部分暴露的SiGe层3的一部分，形成Ge含量低于SiGe层3的Ge含量低的Ge蒸镀部8。此后，沟槽7a的壁被氧化。

10. 发明授权

US06860247B2 Engine variable valve timing system 失效
标题翻译：发动机可变气门正时系统
公开(公告)号：US06860247B2
公开(公告)日：2005-03-01
申请号：US10714227
申请日：2003-11-14
申请人： Akira Asai , Masaki Fukuma , Masahiro Naito , Kouichi Shimizu , Ikuma Takahashi , Kazuhiro Tomizawa
发明人： Akira Asai , Masaki Fukuma , Masahiro Naito , Kouichi Shimizu , Ikuma Takahashi , Kazuhiro Tomizawa
IPC分类号： F01L1/344 , F01L1/34
CPC分类号： F01L1/3442 , F01L1/022 , F01L2001/0537 , F01L2001/34426 , F01L2001/3443 , F01L2001/34433 , F01L2001/34469 , F01L2001/34483 , Y10T74/2102
摘要： In the variable valve timing system according to the present invention, portions of the intake-side advancing hydraulic line and a retarding hydraulic line respectively constitute annular grooves 104 and 113 for advancing and retarding provided on the intake camshaft 5 bearing surface 5a of the cam cap 4 which supports the camshafts 5 and 6. In addition, portions of the advancing hydraulic line and the retarding hydraulic line for exhaust respectively constitute annular grooves for advancing and retarding 123 and 133 provided on the exhaust camshaft 6 bearing surface 4b of the cam cap 4. Moreover, the annular groove for retarding 113 on the intake camshaft 5 bearing surface 4a and the annular groove for advancing 123 on the exhaust camshaft 6 bearing surface 4b are respectively provided in the center in the width direction of their respective bearing surfaces 4a and 4b.
摘要翻译：在根据本发明的可变气门正时系统中，进气侧前进液压管线和延迟液压管路的部分分别构成用于在进气凸轮轴5的凸轮轴5的轴承面5a上设置的用于前进和延迟的环形槽104和113 此外，前进液压管路和排气缓冲液压管路的一部分分别构成用于使设在凸轮盖4的排气凸轮轴6轴承面4b上的123和133的推进和延迟的环形槽此外，在进气凸轮轴5的承载面4a上延伸的环状槽113和排气凸轮轴6轴承面4b上的行进用环状槽123分别设置在其各自的轴承面4a，4b的宽度方向的中央。

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