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    • 9. 发明申请
    • Methods of Manufacturing Semiconductor Devices
    • 制造半导体器件的方法
    • US20140017894A1
    • 2014-01-16
    • US13546800
    • 2012-07-11
    • Cheng-Hsiung TsaiChung-Ju LeeHsin-Chieh YaoTien-I Bao
    • Cheng-Hsiung TsaiChung-Ju LeeHsin-Chieh YaoTien-I Bao
    • H01L21/311
    • H01L21/0337H01L21/02115H01L21/31144H01L21/76816
    • Methods of manufacturing semiconductor devices are disclosed. In one embodiment, a material layer is formed over a workpiece. The workpiece includes a first portion, a second portion, and a hard mask disposed between the first portion and the second portion. The material layer is patterned, and first spacers are formed on sidewalls of the patterned material layer. The patterned material layer is removed, and the second portion of the workpiece is patterned using the first spacers as an etch mask. The first spacers are removed, and second spacers are formed on sidewalls of the patterned second portion of the workpiece. The patterned second portion of the workpiece is removed, and the hard mask of the workpiece is patterned using the second spacers as an etch mask. The first portion of the workpiece is patterned using the hard mask as an etch mask.
    • 公开了制造半导体器件的方法。 在一个实施例中,材料层形成在工件上。 工件包括设置在第一部分和第二部分之间的第一部分,第二部分和硬掩模。 图案化材料层,并且在图案化材料层的侧壁上形成第一间隔物。 去除图案化的材料层,并且使用第一间隔件作为蚀刻掩模来对工件的第二部分进行图案化。 去除第一间隔物,并且在工件的图案化第二部分的侧壁上形成第二间隔物。 去除工件的图案化的第二部分,并且使用第二间隔件作为蚀刻掩模来对工件的硬掩模进行图案化。 使用硬掩模作为蚀刻掩模来对工件的第一部分进行图案化。