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1. 发明申请

US20110233524A1 SPIN TRANSISTOR HAVING MULTIFERROIC GATE DIELECTRIC 有权
标题翻译：具有多功能栅极电介质的旋转晶体管
公开(公告)号：US20110233524A1
公开(公告)日：2011-09-29
申请号：US13071934
申请日：2011-03-25
申请人： Kang-Lung Wang , Ajey Poovannummoottil Jacob , Faxian Xiu
发明人： Kang-Lung Wang , Ajey Poovannummoottil Jacob , Faxian Xiu
IPC分类号： H01L43/00
CPC分类号： H01L29/517 , B82Y10/00 , H01L29/0673 , H01L29/122 , H01L29/42356 , H01L29/66984 , Y10S977/935
摘要： A carrier-mediated magnetic phase change spin transistor is disclosed. In general, the spin transistor includes a Dilute Magnetic Semiconductor (DMS) channel and a gate stack formed on the DMS channel. The gate stack includes a multiferroic gate dielectric on the DMS channel, and a gate contact on a surface of the multiferroic gate dielectric opposite the DMS channel. The multiferroic gate dielectric is formed of a multiferroic material that exhibits a cross-coupling between magnetic and electric orders (i.e., magnetoelectric coupling), which in one embodiment is BiFeO3 (BFO). As a result, the multiferroic material layer enables an electrically modulated magnetic exchange bias that enhances paramagnetic to ferromagnetic switching of the DMS channel. The DMS channel is formed of a DMS material, which in one embodiment is Manganese Germanium (MnGe). In one embodiment, the DMS channel is a nanoscale DMS channel.
摘要翻译：公开了载体介导的磁相变自旋晶体管。通常，自旋晶体管包括稀疏磁性半导体（DMS）通道和形成在DMS通道上的栅极堆叠。栅极堆叠包括在DMS通道上的多铁栅极电介质，以及与DMS沟道相对的多铁栅极电介质的表面上的栅极接触。多铁栅极电介质由表现出磁和电顺序（即磁电耦合）之间的交叉耦合的多铁性材料形成，在一个实施例中是BiFeO 3（BFO）。结果，多铁性材料层能够实现电磁调节的磁性交换偏置，其增强DMS通道的顺磁性到铁磁性切换。 DMS通道由DMS材料形成，在一个实施方案中，其为锰锗（MnGe）。在一个实施例中，DMS信道是纳米级DMS信道。

2. 发明授权

US08860006B2 Spin transistor having multiferroic gate dielectric 有权
标题翻译：具有多栅极电介质的自旋晶体管
公开(公告)号：US08860006B2
公开(公告)日：2014-10-14
申请号：US13071934
申请日：2011-03-25
申请人： Kang-Lung Wang , Ajey Poovannummoottil , Faxian Xiu
发明人： Kang-Lung Wang , Ajey Poovannummoottil , Faxian Xiu
IPC分类号： H01L43/00 , B82Y10/00 , H01L29/66 , H01L29/51 , H01L29/12 , H01L29/423 , H01L29/06
CPC分类号： H01L29/517 , B82Y10/00 , H01L29/0673 , H01L29/122 , H01L29/42356 , H01L29/66984 , Y10S977/935
摘要： A carrier-mediated magnetic phase change spin transistor is disclosed. In general, the spin transistor includes a Dilute Magnetic Semiconductor (DMS) channel and a gate stack formed on the DMS channel. The gate stack includes a multiferroic gate dielectric on the DMS channel, and a gate contact on a surface of the multiferroic gate dielectric opposite the DMS channel. The multiferroic gate dielectric is formed of a multiferroic material that exhibits a cross-coupling between magnetic and electric orders (i.e., magnetoelectric coupling), which in one embodiment is BiFeO3 (BFO). As a result, the multiferroic material layer enables an electrically modulated magnetic exchange bias that enhances paramagnetic to ferromagnetic switching of the DMS channel. The DMS channel is formed of a DMS material, which in one embodiment is Manganese Germanium (MnGe). In one embodiment, the DMS channel is a nanoscale DMS channel.
摘要翻译：公开了载体介导的磁相变自旋晶体管。通常，自旋晶体管包括稀疏磁性半导体（DMS）通道和形成在DMS通道上的栅极堆叠。栅极堆叠包括在DMS通道上的多铁栅极电介质，以及与DMS沟道相对的多铁栅极电介质的表面上的栅极接触。多铁栅极电介质由表现出磁和电顺序（即磁电耦合）之间的交叉耦合的多铁性材料形成，在一个实施例中是BiFeO 3（BFO）。结果，多铁性材料层能够实现电磁调节的磁性交换偏置，其增强DMS通道的顺磁性到铁磁性切换。 DMS通道由DMS材料形成，在一个实施方案中，其为锰锗（MnGe）。在一个实施例中，DMS信道是纳米级DMS信道。

3. 发明授权

US08766341B2 Epitaxial growth of single crystalline MgO on germanium 有权
标题翻译：单晶MgO在锗上的外延生长
公开(公告)号：US08766341B2
公开(公告)日：2014-07-01
申请号：US12905675
申请日：2010-10-15
申请人： Wei Han , Yi Zhou , Kang-Lung Wang , Roland K. Kawakami
发明人： Wei Han , Yi Zhou , Kang-Lung Wang , Roland K. Kawakami
IPC分类号： H01L21/02 , H01L29/10 , H01L29/12 , H01L21/00
CPC分类号： H01L21/02293 , H01L21/02175 , H01L21/02269 , H01L29/66984
摘要： The embodiments disclosed herein relate to growth of magnesium-oxide on a single crystalline substrate of germanium. The embodiments further describes a method of manufacturing and crystalline structure of a FM/MgO/Ge(001) heterostructure. The embodiments further related to method of manufacturing and a crystalline structure for a high-k dielectric//MgO [100](001)//Ge[110](001) heterostructure.
摘要翻译：本文公开的实施方案涉及在锗的单一晶体衬底上生长氧化镁。实施例进一步描述了FM / MgO / Ge（001）异质结构的制造方法和晶体结构。实施例进一步涉及制造方法和用于高k电介质// MgO [100]（001）// Ge [110]（001）异质结构的晶体结构。

4. 发明申请

US20140042574A1 TUNABLE AND METASTABLE FERROELECTRIC MATERIALS AND MAGNETO-ELECTRIC DEVICES 有权
标题翻译：可控和可转换的电磁材料和磁电装置
公开(公告)号：US20140042574A1
公开(公告)日：2014-02-13
申请号：US14113562
申请日：2012-04-27
申请人： Gregory P. Carman , Kang-Lung Wang , Tao Wu , Alexandre Bur , Pedram Khalili Amiri
发明人： Gregory P. Carman , Kang-Lung Wang , Tao Wu , Alexandre Bur , Pedram Khalili Amiri
IPC分类号： H01L43/10 , H01L43/02
CPC分类号： H01L43/10 , H01L41/1875 , H01L43/02 , H01L43/08
摘要： A ferroelectric device includes a first electrode, a second electrode spaced apart from the first electrode, and a ferroelectric element arranged between the first and second electrodes. The ferroelectric element has a plurality of quasistatic strain configurations that are selectable by the application of an electric field and the device has selectable electromechanical displacement by the application of the electric field.
摘要翻译：铁电体器件包括第一电极，与第一电极间隔开的第二电极和布置在第一和第二电极之间的铁电元件。铁电元件具有可通过施加电场来选择的多个准静态应变结构，并且该器件通过施加电场而具有可选的机电位移。

5. 发明授权

US09166147B2 Tunable and metastable ferroelectric materials and magneto-electric devices 有权
标题翻译：可调谐和亚稳态铁电材料和磁电设备
公开(公告)号：US09166147B2
公开(公告)日：2015-10-20
申请号：US14113562
申请日：2012-04-27
申请人： Gregory P. Carman , Kang-Lung Wang , Tao Wu , Alexandre Bur , Pedram Khalili Amiri
发明人： Gregory P. Carman , Kang-Lung Wang , Tao Wu , Alexandre Bur , Pedram Khalili Amiri
IPC分类号： H01L29/82 , H01L43/10 , H01L41/187 , H01L43/02
CPC分类号： H01L43/10 , H01L41/1875 , H01L43/02 , H01L43/08
摘要： A ferroelectric device includes a first electrode, a second electrode spaced apart from the first electrode, and a ferroelectric element arranged between the first and second electrodes. The ferroelectric element has a plurality of quasistatic strain configurations that are selectable by the application of an electric field and the device has selectable electromechanical displacement by the application of the electric field.
摘要翻译：铁电体器件包括第一电极，与第一电极间隔开的第二电极和布置在第一和第二电极之间的铁电元件。铁电元件具有可通过施加电场来选择的多个准静态应变结构，并且该器件通过施加电场而具有可选的机电位移。

6. 发明申请

US20130015429A1 ALL GRAPHENE FLASH MEMORY DEVICE 有权
标题翻译：所有GRAPHENE闪存存储器件
公开(公告)号：US20130015429A1
公开(公告)日：2013-01-17
申请号：US13180601
申请日：2011-07-12
申请人： Augustin J. Hong , Ji-Young Kim , Kang-Lung Wang
发明人： Augustin J. Hong , Ji-Young Kim , Kang-Lung Wang
IPC分类号： H01L29/12
CPC分类号： B82Y10/00 , G11C16/04 , G11C2213/35 , H01L27/11529 , H01L27/11551 , H01L29/1606 , H01L29/42324 , H01L29/7881
摘要： A Graphene Flash Memory (GFM) device is disclosed. In general, the GFM device includes a number of memory cells, where each memory cell includes a graphene channel, a graphene storage layer, and a graphene electrode. In one embodiment, by using a graphene channel, graphene storage layer, and graphene electrode, the memory cells of the GFM device are enabled to be scaled down much more than memory cells of a conventional flash memory device. More specifically, in one embodiment, the GFM device has a feature size less than 25 nanometers, less than or equal to 20 nanometers, less than or equal to 15 nanometers, less than or equal to 10 nanometers, or less than or equal to 5 nanometers.
摘要翻译：公开了一种石墨烯闪存（GFM）装置。通常，GFM器件包括多个存储器单元，其中每个存储器单元包括石墨烯通道，石墨烯存储层和石墨烯电极。在一个实施例中，通过使用石墨烯通道，石墨烯存储层和石墨烯电极，能够使GFM器件的存储器单元比常规闪存器件的存储器单元小得多。更具体地说，在一个实施例中，GFM器件具有小于25纳米，小于或等于20纳米，小于或等于15纳米，小于或等于10纳米，或小于或等于5纳米纳米。

7. 发明授权

US4339869A Method of making low resistance contacts in semiconductor devices by ion induced silicides 失效
标题翻译：通过离子诱导的硅化物在半导体器件中制造低电阻接触的方法
公开(公告)号：US4339869A
公开(公告)日：1982-07-20
申请号：US187043
申请日：1980-09-15
申请人： Robert F. Reihl , Kang-Lung Wang
发明人： Robert F. Reihl , Kang-Lung Wang
IPC分类号： H01L21/265 , H01L21/28 , H01L21/285 , H01L29/72
CPC分类号： H01L21/28518 , H01L21/2652 , H01L21/28
摘要： A low resistance electrical contact is made to a silicon substrate by forming a layer of a refractory metal on the substrate and thereafter applying a dosage of ions through the layer of refractory metal to the substrate to form a layer of a compound of the refractory metal and silicon at the interface of the layer of refractory metal and the silicon substrate.
摘要翻译：通过在衬底上形成难熔金属层，然后将一定数量的离子通过难熔金属层施加到衬底上以形成难熔金属的化合物层，从而对硅衬底进行低电阻电接触，硅在难熔金属层和硅衬底的界面处。

8. 发明授权

US08772853B2 All graphene flash memory device 有权
标题翻译：所有石墨烯闪存器件
公开(公告)号：US08772853B2
公开(公告)日：2014-07-08
申请号：US13180601
申请日：2011-07-12
申请人： Augustin J. Hong , Ji-Young Kim , Kang-Lung Wang
发明人： Augustin J. Hong , Ji-Young Kim , Kang-Lung Wang
IPC分类号： H01L29/778
CPC分类号： B82Y10/00 , G11C16/04 , G11C2213/35 , H01L27/11529 , H01L27/11551 , H01L29/1606 , H01L29/42324 , H01L29/7881
摘要： A Graphene Flash Memory (GFM) device is disclosed. In general, the GFM device includes a number of memory cells, where each memory cell includes a graphene channel, a graphene storage layer, and a graphene electrode. In one embodiment, by using a graphene channel, graphene storage layer, and graphene electrode, the memory cells of the GFM device are enabled to be scaled down much more than memory cells of a conventional flash memory device. More specifically, in one embodiment, the GFM device has a feature size less than 25 nanometers, less than or equal to 20 nanometers, less than or equal to 15 nanometers, less than or equal to 10 nanometers, or less than or equal to 5 nanometers.
摘要翻译：公开了一种石墨烯闪存（GFM）装置。通常，GFM器件包括多个存储器单元，其中每个存储器单元包括石墨烯通道，石墨烯存储层和石墨烯电极。在一个实施例中，通过使用石墨烯通道，石墨烯存储层和石墨烯电极，能够使GFM器件的存储器单元比常规闪存器件的存储器单元小得多。更具体地说，在一个实施例中，GFM器件具有小于25纳米，小于或等于20纳米，小于或等于15纳米，小于或等于10纳米，或小于或等于5纳米纳米。

9. 发明申请

US20110089415A1 EPITAXIAL GROWTH OF SINGLE CRYSTALLINE MGO ON GERMANIUM 有权
标题翻译：单晶MgO在锗上的外延生长
公开(公告)号：US20110089415A1
公开(公告)日：2011-04-21
申请号：US12905675
申请日：2010-10-15
申请人： Wei Han , Yi Zhou , Kang-Lung Wang , Roland K. Kawakami
发明人： Wei Han , Yi Zhou , Kang-Lung Wang , Roland K. Kawakami
IPC分类号： H01L29/38 , H01L21/20
CPC分类号： H01L21/02293 , H01L21/02175 , H01L21/02269 , H01L29/66984
摘要： The embodiments disclosed herein relate to growth of magnesium-oxide on a single crystalline substrate of germanium. The embodiments further describes a method of manufacturing and crystalline structure of a FM/MgO/Ge(001) heterostructure. The embodiments further related to method of manufacturing and a crystalline structure for a high-k dielectric//MgO [100](001)//Ge[110](001) heterostructure.
摘要翻译：本文公开的实施方案涉及在锗的单一晶体衬底上生长氧化镁。实施例进一步描述了FM / MgO / Ge（001）异质结构的制造方法和晶体结构。实施例进一步涉及制造方法和用于高k电介质// MgO [100]（001）// Ge [110]（001）异质结构的晶体结构。

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