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1. 发明授权

US08860006B2 Spin transistor having multiferroic gate dielectric 有权
标题翻译：具有多栅极电介质的自旋晶体管
公开(公告)号：US08860006B2
公开(公告)日：2014-10-14
申请号：US13071934
申请日：2011-03-25
申请人： Kang-Lung Wang , Ajey Poovannummoottil , Faxian Xiu
发明人： Kang-Lung Wang , Ajey Poovannummoottil , Faxian Xiu
IPC分类号： H01L43/00 , B82Y10/00 , H01L29/66 , H01L29/51 , H01L29/12 , H01L29/423 , H01L29/06
CPC分类号： H01L29/517 , B82Y10/00 , H01L29/0673 , H01L29/122 , H01L29/42356 , H01L29/66984 , Y10S977/935
摘要： A carrier-mediated magnetic phase change spin transistor is disclosed. In general, the spin transistor includes a Dilute Magnetic Semiconductor (DMS) channel and a gate stack formed on the DMS channel. The gate stack includes a multiferroic gate dielectric on the DMS channel, and a gate contact on a surface of the multiferroic gate dielectric opposite the DMS channel. The multiferroic gate dielectric is formed of a multiferroic material that exhibits a cross-coupling between magnetic and electric orders (i.e., magnetoelectric coupling), which in one embodiment is BiFeO3 (BFO). As a result, the multiferroic material layer enables an electrically modulated magnetic exchange bias that enhances paramagnetic to ferromagnetic switching of the DMS channel. The DMS channel is formed of a DMS material, which in one embodiment is Manganese Germanium (MnGe). In one embodiment, the DMS channel is a nanoscale DMS channel.
摘要翻译：公开了载体介导的磁相变自旋晶体管。通常，自旋晶体管包括稀疏磁性半导体（DMS）通道和形成在DMS通道上的栅极堆叠。栅极堆叠包括在DMS通道上的多铁栅极电介质，以及与DMS沟道相对的多铁栅极电介质的表面上的栅极接触。多铁栅极电介质由表现出磁和电顺序（即磁电耦合）之间的交叉耦合的多铁性材料形成，在一个实施例中是BiFeO 3（BFO）。结果，多铁性材料层能够实现电磁调节的磁性交换偏置，其增强DMS通道的顺磁性到铁磁性切换。 DMS通道由DMS材料形成，在一个实施方案中，其为锰锗（MnGe）。在一个实施例中，DMS信道是纳米级DMS信道。

2. 发明申请

US20110233524A1 SPIN TRANSISTOR HAVING MULTIFERROIC GATE DIELECTRIC 有权
标题翻译：具有多功能栅极电介质的旋转晶体管
公开(公告)号：US20110233524A1
公开(公告)日：2011-09-29
申请号：US13071934
申请日：2011-03-25
申请人： Kang-Lung Wang , Ajey Poovannummoottil Jacob , Faxian Xiu
发明人： Kang-Lung Wang , Ajey Poovannummoottil Jacob , Faxian Xiu
IPC分类号： H01L43/00
CPC分类号： H01L29/517 , B82Y10/00 , H01L29/0673 , H01L29/122 , H01L29/42356 , H01L29/66984 , Y10S977/935
摘要： A carrier-mediated magnetic phase change spin transistor is disclosed. In general, the spin transistor includes a Dilute Magnetic Semiconductor (DMS) channel and a gate stack formed on the DMS channel. The gate stack includes a multiferroic gate dielectric on the DMS channel, and a gate contact on a surface of the multiferroic gate dielectric opposite the DMS channel. The multiferroic gate dielectric is formed of a multiferroic material that exhibits a cross-coupling between magnetic and electric orders (i.e., magnetoelectric coupling), which in one embodiment is BiFeO3 (BFO). As a result, the multiferroic material layer enables an electrically modulated magnetic exchange bias that enhances paramagnetic to ferromagnetic switching of the DMS channel. The DMS channel is formed of a DMS material, which in one embodiment is Manganese Germanium (MnGe). In one embodiment, the DMS channel is a nanoscale DMS channel.
摘要翻译：公开了载体介导的磁相变自旋晶体管。通常，自旋晶体管包括稀疏磁性半导体（DMS）通道和形成在DMS通道上的栅极堆叠。栅极堆叠包括在DMS通道上的多铁栅极电介质，以及与DMS沟道相对的多铁栅极电介质的表面上的栅极接触。多铁栅极电介质由表现出磁和电顺序（即磁电耦合）之间的交叉耦合的多铁性材料形成，在一个实施例中是BiFeO 3（BFO）。结果，多铁性材料层能够实现电磁调节的磁性交换偏置，其增强DMS通道的顺磁性到铁磁性切换。 DMS通道由DMS材料形成，在一个实施方案中，其为锰锗（MnGe）。在一个实施例中，DMS信道是纳米级DMS信道。

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