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1. 发明申请

US20090257927A1 FOLDED COAXIAL RESONATORS 审中-公开
标题翻译：折叠同轴共振器
公开(公告)号：US20090257927A1
公开(公告)日：2009-10-15
申请号：US12371864
申请日：2009-02-16
申请人： KARTIK RAMASWAMY , HIROJI HANAWA , KENNETH S. COLLINS , LAWRENCE WONG , ANDREW NGUYEN , STEVEN LANE
发明人： KARTIK RAMASWAMY , HIROJI HANAWA , KENNETH S. COLLINS , LAWRENCE WONG , ANDREW NGUYEN , STEVEN LANE
IPC分类号： H01P1/20 , H01P7/04 , H05H1/24
CPC分类号： H01P7/04
摘要： A method for constructing a distributed element coaxial resonator includes folding a coaxial resonator to provide a structure having a decreased physical length compared to its electrical length. In various embodiments, the resonator is tuned to affect a standing wave when excited by a signal of a specific wavelength. The coaxial resonator includes inner, middle and outer conductor sections, wherein the characteristic impedance is maintained throughout the resonator.
摘要翻译：一种用于构造分布式元件同轴谐振器的方法包括折叠同轴谐振器以提供与其电长度相比具有减小的物理长度的结构。在各种实施例中，当由特定波长的信号激发时，谐振器被调谐以影响驻波。同轴谐振器包括内部，中部和外部导体部分，其中在整个谐振器中保持特征阻抗。

2. 发明申请

US20110023780A1 APPARATUS FOR VHF IMPEDANCE MATCH TUNING 失效
标题翻译：甚高频阻抗匹配调谐装置
公开(公告)号：US20110023780A1
公开(公告)日：2011-02-03
申请号：US12511377
申请日：2009-07-29
申请人： KARTIK RAMASWAMY , HIROJI HANAWA , KENNETH S. COLLINS , LAWRENCE WONG , SAMER BANNA , ANDREW NGUYEN
发明人： KARTIK RAMASWAMY , HIROJI HANAWA , KENNETH S. COLLINS , LAWRENCE WONG , SAMER BANNA , ANDREW NGUYEN
IPC分类号： H03H7/38 , B05C13/00
CPC分类号： H01P7/04
摘要： Embodiments of impedance matching networks are provided herein. In some embodiments, an impedance matching network may include a coaxial resonator having an inner and an outer conductor. A tuning capacitor may be provided for variably controlling a resonance frequency of the coaxial resonator. The tuning capacitor may be formed by a first tuning electrode and a second tuning electrode and an intervening dielectric, wherein the first tuning electrode is formed by a portion of the inner conductor. A load capacitor may be provided for variably coupling energy from the inner conductor to a load. The load capacitor may be formed by the inner conductor, an adjustable load electrode, and an intervening dielectric.
摘要翻译：本文提供了阻抗匹配网络的实施例。在一些实施例中，阻抗匹配网络可以包括具有内部和外部导体的同轴谐振器。可以提供调谐电容器以可变地控制同轴谐振器的谐振频率。调谐电容器可以由第一调谐电极和第二调谐电极和中间电介质形成，其中第一调谐电极由内部导体的一部分形成。可以提供负载电容器，用于可变地耦合从内部导体到负载的能量。负载电容器可以由内部导体，可调负载电极和中间电介质形成。

3. 发明申请

US20110097901A1 DUAL MODE INDUCTIVELY COUPLED PLASMA REACTOR WITH ADJUSTABLE PHASE COIL ASSEMBLY 审中-公开
标题翻译：双模感应耦合等离子体反应器，可调节相线圈组件
公开(公告)号：US20110097901A1
公开(公告)日：2011-04-28
申请号：US12821636
申请日：2010-06-23
申请人： SAMER BANNA , VALENTIN N. TODOROW , KENNETH S. COLLINS , ANDREW NGUYEN , MARTIN JEFF SALINAS , ZHIGANG CHEN , ANKUR AGARWAL , ANNIRUDDHA PAL , TSE-CHIANG WANG , SHAHID RAUF
发明人： SAMER BANNA , VALENTIN N. TODOROW , KENNETH S. COLLINS , ANDREW NGUYEN , MARTIN JEFF SALINAS , ZHIGANG CHEN , ANKUR AGARWAL , ANNIRUDDHA PAL , TSE-CHIANG WANG , SHAHID RAUF
IPC分类号： H01L21/465 , H01L21/46
CPC分类号： H01J37/32165 , H01J37/321 , H01J37/3211 , H01J37/32174
摘要： Embodiments of dual mode inductively coupled plasma reactors and methods of use of same are provided herein. In some embodiments, a dual mode inductively coupled plasma processing system may include a process chamber having a dielectric lid and a plasma source assembly disposed above the dielectric lid. The plasma source assembly includes a plurality of coils configured to inductively couple RF energy into the process chamber to form and maintain a plasma therein, a phase controller for adjusting the relative phase of the RF current applied to each coil in the plurality of coils, and an RF generator coupled to the phase controller and the plurality of coils.
摘要翻译：本文提供了双模电感耦合等离子体反应器的实施例及其使用方法。在一些实施例中，双模感应耦合等离子体处理系统可以包括具有电介质盖和设置在电介质盖上方的等离子体源组件的处理室。等离子体源组件包括多个线圈，其被配置为将RF能量感应耦合到处理室中以在其中形成和维持等离子体;相位控制器，用于调节施加到多个线圈中的每个线圈的RF电流的相对相位;以及耦合到所述相位控制器和所述多个线圈的RF发生器。

4. 发明申请

US20130008604A1 METHOD AND APPARATUS FOR ENHANCING FLOW UNIFORMITY IN A PROCESS CHAMBER 审中-公开
公开(公告)号：US20130008604A1
公开(公告)日：2013-01-10
申请号：US13613941
申请日：2012-09-13
申请人： KALLOL BERA , JAMES D. CARDUCCI , AJIT BALAKRISHNA , SHAHID RAUF , KENNETH S. COLLINS , ANDREW NGUYEN , HAMID NOORBAKHSH
发明人： KALLOL BERA , JAMES D. CARDUCCI , AJIT BALAKRISHNA , SHAHID RAUF , KENNETH S. COLLINS , ANDREW NGUYEN , HAMID NOORBAKHSH
IPC分类号： H01L21/306
CPC分类号： H01J37/32834 , C23C16/4412 , H01L21/67017 , H01L21/67167 , H01L21/6719
摘要： Methods and apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate may include a process chamber having an inner volume and an exhaust system coupled thereto, wherein the exhaust system includes a plurality of first conduits, each first conduit having an inlet adapted to receive exhaust from the inner volume of the process chamber. A pumping plenum is coupled to each of the plurality of first conduits. The pumping plenum has a pumping port adapted to pump the exhaust from the chamber. The conductance between each inlet of the plurality of first conduits and the pumping port is substantially equivalent.

5. 发明申请

US20110265814A1 METHODS FOR PROCESSING SUBSTRATES IN PROCESS SYSTEMS HAVING SHARED RESOURCES 有权
标题翻译：在具有共享资源的过程系统中处理基板的方法
公开(公告)号：US20110265814A1
公开(公告)日：2011-11-03
申请号：US12915240
申请日：2010-10-29
申请人： JAMES P. CRUSE , DERMOT CANTWELL , MING XU , CHARLES HARDY , BENJAMIN SCHWARZ , KENNETH S. COLLINS , ANDREW NGUYEN , ZHIFENG SUI , EVANS LEE
发明人： JAMES P. CRUSE , DERMOT CANTWELL , MING XU , CHARLES HARDY , BENJAMIN SCHWARZ , KENNETH S. COLLINS , ANDREW NGUYEN , ZHIFENG SUI , EVANS LEE
IPC分类号： B08B6/00
CPC分类号： H01L21/6719 , H01J37/32899
摘要： Methods for processing substrates in twin chamber processing systems having first and second process chambers and shared processing resources are provided herein. In some embodiments, a method may include flowing a process gas from a shared gas panel to a processing volume of the first process chamber and to a processing volume of the second process chamber; forming a first plasma in the first processing volume to process the first substrate and a second plasma to process the second substrate; monitoring the first processing volume and the second processing volume to determine if a process endpoint is reached in either volume; and either terminating the first and second plasma simultaneously when a first endpoint is reached; or terminating the first plasma when a first endpoint is reached in the first processing volume while continuing to provide the second plasma in the second processing volume until a second endpoint is reached.
摘要翻译：本文提供了具有第一处理室和第二处理室以及共享处理资源的双室处理系统中处理基板的方法。在一些实施例中，一种方法可以包括使处理气体从共用气体面板流动到第一处理室的处理容积和第二处理室的处理容积; 在所述第一处理体积中形成第一等离子体以处理所述第一基板和第二等离子体以处理所述第二基板; 监测第一处理量和第二处理量以确定任一体积中是否达到过程终点; 并且当达到第一端点时同时终止第一和第二等离子体; 或在第一处理容积中达到第一端点时终止第一等离子体，同时继续在第二处理容积中提供第二等离子体直到达到第二端点。

6. 发明申请

US20110265884A1 TWIN CHAMBER PROCESSING SYSTEM WITH SHARED VACUUM PUMP 审中-公开
标题翻译：具有共享真空泵的双腔加工系统
公开(公告)号：US20110265884A1
公开(公告)日：2011-11-03
申请号：US12907952
申请日：2010-10-19
申请人： MING XU , ANDREW NGUYEN , EVANS LEE
发明人： MING XU , ANDREW NGUYEN , EVANS LEE
IPC分类号： F15D1/00
CPC分类号： H01L21/6719 , H01L21/67017 , Y10T137/0396 , Y10T137/86083
摘要： Methods and apparatus for twin chamber processing systems are disclosed, and, in some embodiments, may include a first process chamber having a first vacuum pump to maintain a first operating pressure in a first processing volume selectively isolatable by a first gate valve disposed between the first processing volume and the first vacuum pump; a second process chamber having a second vacuum pump for maintaining a second operating pressure in a second processing volume selectively isolatable by a second gate valve disposed between the second processing volume and the second vacuum pump; and a shared vacuum pump coupled to the first and second processing volumes to reduce a pressure in each processing volume below a critical pressure level, wherein the shared vacuum pump can be selectively isolated from any of the first or second process chambers or the first or second vacuum pumps.
摘要翻译：公开了用于双室处理系统的方法和装置，并且在一些实施例中，可以包括具有第一真空泵的第一处理室，以保持第一处理容积中的第一操作压力，所述第一处理容积可选择性地通过设置在第一加工量和第一台真空泵; 具有第二真空泵的第二处理室，用于保持第二处理容积中的第二操作压力，所述第二处理容积可由设置在所述第二处理容积和所述第二真空泵之间的第二闸阀选择性分离; 以及耦合到所述第一和第二处理体积的共享真空泵，以将每个处理体积中的压力降低到临界压力水平以下，其中所述共享真空泵可以选择性地与所述第一或第二处理室中的任何一个或所述第一或第二处理室隔离真空泵。

7. 发明申请

US20120074514A1 ETCH-RESISTANT COATING ON SENSOR WAFERS FOR IN-SITU MEASUREMENT 审中-公开
标题翻译：用于现场测量的传感器波纹耐蚀涂层
公开(公告)号：US20120074514A1
公开(公告)日：2012-03-29
申请号：US12892841
申请日：2010-09-28
申请人： ANDREW NGUYEN , FARHAT QULI , MEI SUN , VASUDEV VENKATESAN
发明人： ANDREW NGUYEN , FARHAT QULI , MEI SUN , VASUDEV VENKATESAN
IPC分类号： H01L31/058 , H01L21/50
摘要： A sensor wafer may be configured for in-situ measurements of parameters during an etch process. The sensor wafer may include a substrate, a cover, and one or more components positioned between the substrate and the cover. An etch-resistant coating is formed on one or more surfaces of the cover and/or substrate. The coating is configured to resist etch processes that etch the cover and/or substrate for a longer period than standard thin film materials of the same or greater thickness than the protective coating.
摘要翻译：传感器晶片可以被配置用于在蚀刻工艺期间进行参数的原位测量。传感器晶片可以包括基板，盖子和位于基板和盖子之间的一个或多个部件。在盖和/或基底的一个或多个表面上形成耐蚀刻涂层。涂层被配置为抵抗蚀刻工艺，其蚀刻覆盖物和/或衬底比与保护涂层相同或更厚的标准薄膜材料更长的时间。

8. 发明申请

US20110265951A1 TWIN CHAMBER PROCESSING SYSTEM 审中-公开
标题翻译：双室加工系统
公开(公告)号：US20110265951A1
公开(公告)日：2011-11-03
申请号：US12908644
申请日：2010-10-20
申请人： MING XU , ANDREW NGUYEN , EVANS LEE , JARED AHMAD LEE , JAMES P. CRUSE , CORIE LYNN COBB , MARTIN JEFF SALINAS , ANCHEL SHEYNER , EZRA ROBERT GOLD , JOHN W. LANE
发明人： MING XU , ANDREW NGUYEN , EVANS LEE , JARED AHMAD LEE , JAMES P. CRUSE , CORIE LYNN COBB , MARTIN JEFF SALINAS , ANCHEL SHEYNER , EZRA ROBERT GOLD , JOHN W. LANE
IPC分类号： C23F1/08 , C23C16/458 , C23C16/52 , C23C16/455
CPC分类号： C23C16/52 , C23C16/45561 , C23C16/46 , C23C16/509 , C23C16/54
摘要： Methods and apparatus for twin chamber processing systems are disclosed, and, in some embodiments, may include a first process chamber and a second process chamber having independent processing volumes and a plurality of shared resources between the first and second process chambers. In some embodiments, the shared resources include at least one of a shared vacuum pump, a shared gas panel, or a shared heat transfer source.
摘要翻译：公开了用于双室处理系统的方法和装置，并且在一些实施例中，可以包括具有独立处理量的第一处理室和第二处理室以及第一处理室和第二处理室之间的多个共享资源。在一些实施例中，共享资源包括共享真空泵，共用气体面板或共用传热源中的至少一个。

9. 发明申请

US20110265549A1 METHODS AND APPARATUS FOR CALIBRATING FLOW CONTROLLERS IN SUBSTRATE PROCESSING SYSTEMS 有权
标题翻译：用于在基板处理系统中校准流量控制器的方法和装置
公开(公告)号：US20110265549A1
公开(公告)日：2011-11-03
申请号：US12915345
申请日：2010-10-29
申请人： JAMES P. CRUSE , JOHN W. LANE , MARIUSCH GREGOR , DUC BUCKIUS , BERRIN DARAN , CORIE LYNN COBB , MING XU , ANDREW NGUYEN
发明人： JAMES P. CRUSE , JOHN W. LANE , MARIUSCH GREGOR , DUC BUCKIUS , BERRIN DARAN , CORIE LYNN COBB , MING XU , ANDREW NGUYEN
IPC分类号： G01F25/00 , F15D1/00
CPC分类号： H01L21/67253 , F16K37/00 , F16K37/0091 , G01F25/00 , Y10T29/53022 , Y10T137/8158 , Y10T137/87153 , Y10T137/87684 , Y10T137/877
摘要： Methods and apparatus for calibrating a plurality of gas flows in a substrate processing system are provided herein. In some embodiments, a substrate processing system may include a cluster tool comprising a first process chamber and a second process chamber coupled to a central vacuum transfer chamber; a first flow controller to provide a process gas to the first process chamber; a second flow controller to provide the process gas to the second process chamber; a mass flow verifier to verify a flow rate from each of the first and second flow controllers; a first conduit to selectively couple the first flow controller to the mass flow verifier; and a second conduit to selectively couple the second flow controller to the mass flow verifier.
摘要翻译：本文提供了用于校准衬底处理系统中的多个气流的方法和装置。在一些实施例中，衬底处理系统可以包括簇工具，其包括耦合到中心真空传送室的第一处理室和第二处理室; 第一流量控制器，用于向第一处理室提供处理气体; 第二流量控制器，用于向第二处理室提供处理气体; 质量流量验证器，用于验证来自所述第一和第二流量控制器中的每一个的流量; 用于选择性地将第一流量控制器耦合到质量流量验证器的第一导管; 以及用于选择性地将第二流量控制器耦合到质量流量验证器的第二导管。

10. 发明申请

US20120097332A1 SUBSTRATE SUPPORT WITH SYMMETRICAL FEED STRUCTURE 有权
标题翻译：基板支撑与对称馈电结构
公开(公告)号：US20120097332A1
公开(公告)日：2012-04-26
申请号：US12910547
申请日：2010-10-22
申请人： XING LIN , DOUGLAS A. BUCHBERGER, JR. , XIAOPING ZHOU , ANDREW NGUYEN , ANCHEL SHEYNER
发明人： XING LIN , DOUGLAS A. BUCHBERGER, JR. , XIAOPING ZHOU , ANDREW NGUYEN , ANCHEL SHEYNER
IPC分类号： C23F1/08
CPC分类号： H01L21/67069 , H01J37/32532 , H01J37/32577 , H01J37/32715 , H01J37/32724 , H01L21/6831
摘要： Apparatus for processing a substrate is disclosed herein. In some embodiments, a substrate support may include a substrate support having a support surface for supporting a substrate the substrate support having a central axis; a first electrode disposed within the substrate support to provide RF power to a substrate when disposed on the support surface; an inner conductor coupled to the first electrode about a center of a surface of the first electrode opposing the support surface, wherein the inner conductor is tubular and extends from the first electrode parallel to and about the central axis in a direction away from the support surface of the substrate support; an outer conductor disposed about the inner conductor; and an outer dielectric layer disposed between the inner and outer conductors, the outer dielectric layer electrically isolating the outer conductor from the inner conductor. The outer conductor may be coupled to electrical ground.
摘要翻译：本文公开了用于处理衬底的装置。在一些实施例中，衬底支撑件可以包括具有用于支撑衬底的支撑表面的衬底支撑件，衬底支撑件具有中心轴线; 设置在所述基板支撑件内的第一电极，用于当设置在所述支撑表面上时向基板提供RF功率; 内部导体，其围绕第一电极的与支撑表面相对的表面的中心耦合到第一电极，其中内部导体是管状的，并且从第一电极沿着远离支撑表面的方向平行于中心轴并围绕中心轴线延伸的基板支撑; 设置在内部导体周围的外部导体; 以及设置在所述内部和外部导体之间的外部电介质层，所述外部电介质层将所述外部导体与所述内部导体电隔离。外部导体可以耦合到电气接地。

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