会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明授权
    • Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zone
    • 具有多个气体注入区域的等离子体反应器装置,其具有用于每个区域的时变单独的可配置气体组成
    • US08231799B2
    • 2012-07-31
    • US11414026
    • 2006-04-28
    • Kallol BeraXiaoye ZhaoKenny L. DoanEzra Robert GoldPaul Lukas BrillhartBruno GeoffrionBryan PuDaniel J. Hoffman
    • Kallol BeraXiaoye ZhaoKenny L. DoanEzra Robert GoldPaul Lukas BrillhartBruno GeoffrionBryan PuDaniel J. Hoffman
    • H01L21/00C23C16/00
    • H01L21/3065H01J37/32082H01J37/3244H01J37/32449H01L21/31116
    • A plasma reactor for processing a workpiece such as a semiconductor wafer has a housing defining a process chamber, a workpiece support configured to support a workpiece within the chamber during processing and comprising a plasma bias power electrode. The reactor further includes plural gas sources containing different gas species, plural process gas inlets and an array of valves capable of coupling any of said plural gas sources to any of said plural process gas inlets. The reactor also includes a controller governing said array of valves and is programmed to change the flow rates of gases through said inlets over time. A ceiling plasma source power electrode of the reactor has plural gas injection zones coupled to the respective process gas inlets. In a preferred embodiment, the plural gas sources comprise supplies containing, respectively, fluorocarbon or fluorohydrocarbon species with respectively different ratios of carbon and fluorine chemistries. They further include an oxygen or nitrogen supply and a diluent gas supply. The controller is programmed to produce flow of different process gas species or mixtures thereof through different ones of said plural gas injection zones. The controller is further programmed to change over time the species content of the gases flowing through different ones of said plural gas injection zones.
    • 用于处理诸如半导体晶片的工件的等离子体反应器具有限定处理室的壳体,被配置为在处理期间支撑室内的工件并包括等离子体偏置功率电极的工件支撑件。 反应器还包括含有不同气体种类的多个气体源,多个处理气体入口和能够将所述多个气体源中的任一个耦合到所述多个处理气体入口中的任何一个的阀阵列。 反应器还包括控制所述阀阵列的控制器,并被编程为随时间改变通过所述入口的气体的流速。 反应器的天花板等离子体源功率电极具有耦合到各个工艺气体入口的多个气体注入区域。 在一个优选的实施方案中,多个气体源包括分别含有分别具有不同比例的碳和氟化学物质的碳氟化合物或氟代烃物质的物料。 它们还包括氧气或氮气供应和稀释气体供应。 控制器被编程为通过不同的所述多个气体注入区域产生不同工艺气体种类或其混合物的流动。 控制器进一步被编程为随时间改变流过不同的所述多个气体注入区域的气体的物质含量。
    • 8. 发明授权
    • Methods and apparatus for calibrating pressure gauges in a substrate processing system
    • 在基板处理系统中校准压力表的方法和装置
    • US08616043B2
    • 2013-12-31
    • US12916450
    • 2010-10-29
    • James P. CruseEzra Robert GoldJared Ahmad LeeMing Xu
    • James P. CruseEzra Robert GoldJared Ahmad LeeMing Xu
    • G01L27/02
    • G01L27/005H01L21/67253Y10T137/86083
    • Systems and methods for calibrating pressure gauges in one or more process chambers coupled to a transfer chamber having a transfer volume is disclosed herein. The method includes providing a first pressure in the transfer volume and in a first inner volume of a first process chamber coupled to the transfer chamber, wherein the transfer volume and the first inner volume are fluidly coupled, injecting a calibration gas into the transfer volume to raise a pressure in the transfer volume and in the first inner volume to a second pressure, measuring the second pressure using each of a reference pressure gauge coupled to the transfer chamber and a first pressure gauge coupled to the first process chamber while the transfer volume and the first inner volume are fluidly coupled, and calibrating the first pressure gauge based on a difference in the measured second pressure between the reference pressure gauge and the first pressure gauge.
    • 本文公开了用于校准耦合到具有转移体积的转移室的一个或多个处理室中的压力计的系统和方法。 该方法包括在传送体积和连接到传送室的第一处理室的第一内部容积中提供第一压力,其中传送体积和第一内部体积被流体耦合,将校准气体注入到传送体积中 将传送体积和第一内部体积中的压力提高到第二压力,使用耦合到传送室的参考压力表中的每一个测量第二压力,以及耦合到第一处理室的第一压力表,同时传送体积和 第一内部体积流体耦合,并且基于测量的参考压力计和第一压力计之间的第二压力的差异校准第一压力计。