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1. 发明申请

US20120227817A1 GAS DELIVERY SYSTEM AND METHOD OF USE THEREOF 有权
标题翻译：气体输送系统及其使用方法
公开(公告)号：US20120227817A1
公开(公告)日：2012-09-13
申请号：US13414217
申请日：2012-03-07
申请人： JAMES P. CRUSE , EZRA ROBERT GOLD , JOHN W. LANE
发明人： JAMES P. CRUSE , EZRA ROBERT GOLD , JOHN W. LANE
IPC分类号： B01F5/00 , F16K37/00
CPC分类号： B01F3/028 , G05D11/132 , Y10T137/0318 , Y10T137/2499 , Y10T137/8326 , Y10T137/87169 , Y10T137/87249 , Y10T137/87281 , Y10T137/87652 , Y10T137/8766 , Y10T137/87684
摘要： Methods and apparatus for delivery of gas are provided herein. In some embodiments, a gas delivery system may include a premix tank having an inlet and an outlet; a plurality of gas supplies coupled to the inlet of the premix tank; a plurality of valves, each valve respectively disposed in line with a corresponding one of the plurality of gas supplies; and a conduit coupling the outlet of the premix tank to one or more gas delivery zones.
摘要翻译：本文提供了用于输送气体的方法和装置。在一些实施例中，气体输送系统可以包括具有入口和出口的预混合罐; 耦合到预混合容器的入口的多个气体供应源; 多个阀，每个阀分别与所述多个气体供应中的相应一个排放成一直线; 以及将预混合箱的出口连接到一个或多个气体输送区的导管。

2. 发明授权

US08231799B2 Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zone 有权
标题翻译：具有多个气体注入区域的等离子体反应器装置，其具有用于每个区域的时变单独的可配置气体组成
公开(公告)号：US08231799B2
公开(公告)日：2012-07-31
申请号：US11414026
申请日：2006-04-28
申请人： Kallol Bera , Xiaoye Zhao , Kenny L. Doan , Ezra Robert Gold , Paul Lukas Brillhart , Bruno Geoffrion , Bryan Pu , Daniel J. Hoffman
发明人： Kallol Bera , Xiaoye Zhao , Kenny L. Doan , Ezra Robert Gold , Paul Lukas Brillhart , Bruno Geoffrion , Bryan Pu , Daniel J. Hoffman
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01L21/3065 , H01J37/32082 , H01J37/3244 , H01J37/32449 , H01L21/31116
摘要： A plasma reactor for processing a workpiece such as a semiconductor wafer has a housing defining a process chamber, a workpiece support configured to support a workpiece within the chamber during processing and comprising a plasma bias power electrode. The reactor further includes plural gas sources containing different gas species, plural process gas inlets and an array of valves capable of coupling any of said plural gas sources to any of said plural process gas inlets. The reactor also includes a controller governing said array of valves and is programmed to change the flow rates of gases through said inlets over time. A ceiling plasma source power electrode of the reactor has plural gas injection zones coupled to the respective process gas inlets. In a preferred embodiment, the plural gas sources comprise supplies containing, respectively, fluorocarbon or fluorohydrocarbon species with respectively different ratios of carbon and fluorine chemistries. They further include an oxygen or nitrogen supply and a diluent gas supply. The controller is programmed to produce flow of different process gas species or mixtures thereof through different ones of said plural gas injection zones. The controller is further programmed to change over time the species content of the gases flowing through different ones of said plural gas injection zones.
摘要翻译：用于处理诸如半导体晶片的工件的等离子体反应器具有限定处理室的壳体，被配置为在处理期间支撑室内的工件并包括等离子体偏置功率电极的工件支撑件。反应器还包括含有不同气体种类的多个气体源，多个处理气体入口和能够将所述多个气体源中的任一个耦合到所述多个处理气体入口中的任何一个的阀阵列。反应器还包括控制所述阀阵列的控制器，并被编程为随时间改变通过所述入口的气体的流速。反应器的天花板等离子体源功率电极具有耦合到各个工艺气体入口的多个气体注入区域。在一个优选的实施方案中，多个气体源包括分别含有分别具有不同比例的碳和氟化学物质的碳氟化合物或氟代烃物质的物料。它们还包括氧气或氮气供应和稀释气体供应。控制器被编程为通过不同的所述多个气体注入区域产生不同工艺气体种类或其混合物的流动。控制器进一步被编程为随时间改变流过不同的所述多个气体注入区域的气体的物质含量。

3. 发明申请

US20110265951A1 TWIN CHAMBER PROCESSING SYSTEM 审中-公开
标题翻译：双室加工系统
公开(公告)号：US20110265951A1
公开(公告)日：2011-11-03
申请号：US12908644
申请日：2010-10-20
申请人： MING XU , ANDREW NGUYEN , EVANS LEE , JARED AHMAD LEE , JAMES P. CRUSE , CORIE LYNN COBB , MARTIN JEFF SALINAS , ANCHEL SHEYNER , EZRA ROBERT GOLD , JOHN W. LANE
发明人： MING XU , ANDREW NGUYEN , EVANS LEE , JARED AHMAD LEE , JAMES P. CRUSE , CORIE LYNN COBB , MARTIN JEFF SALINAS , ANCHEL SHEYNER , EZRA ROBERT GOLD , JOHN W. LANE
IPC分类号： C23F1/08 , C23C16/458 , C23C16/52 , C23C16/455
CPC分类号： C23C16/52 , C23C16/45561 , C23C16/46 , C23C16/509 , C23C16/54
摘要： Methods and apparatus for twin chamber processing systems are disclosed, and, in some embodiments, may include a first process chamber and a second process chamber having independent processing volumes and a plurality of shared resources between the first and second process chambers. In some embodiments, the shared resources include at least one of a shared vacuum pump, a shared gas panel, or a shared heat transfer source.
摘要翻译：公开了用于双室处理系统的方法和装置，并且在一些实施例中，可以包括具有独立处理量的第一处理室和第二处理室以及第一处理室和第二处理室之间的多个共享资源。在一些实施例中，共享资源包括共享真空泵，共用气体面板或共用传热源中的至少一个。

4. 发明授权

US07910013B2 Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure 有权
标题翻译：基于所选等离子体参数的预定并行行为作为源功率，偏置功率和腔室压力的函数来控制腔室的方法
公开(公告)号：US07910013B2
公开(公告)日：2011-03-22
申请号：US11608980
申请日：2006-12-11
申请人： Daniel J. Hoffman , Ezra Robert Gold
发明人： Daniel J. Hoffman , Ezra Robert Gold
IPC分类号： G01L21/30 , H01L21/66
CPC分类号： H01J37/32174 , H01J37/32935
摘要： For each one of plural plasma parameters, such as ion density, wafer voltage, etch rate, wafer current, a relevant surface of constant value is fetched from a memory. The relevant surface of constant value corresponds to a user-selected value of one of the plasma parameters, the surface being defined in a space of which each one of plural, chamber parameters (e.g., source power, bias power and chamber pressure) is a dimension. An intersection of these relevant surfaces is found, the intersection corresponding to a target value of source power, bias power and chamber pressure. The source power, the bias power and the chamber pressure, respectively, are set to their corresponding target values.
摘要翻译：对于诸如离子密度，晶片电压，蚀刻速率，晶片电流的多个等离子体参数中的每一个，从存储器取出恒定值的相关表面。恒定值的相关表面对应于等离子体参数之一的用户选择的值，表面被定义在其中多个室参数（例如，源功率，偏置功率和室压力）中的每一个为尺寸。找到这些相关表面的交点，该交点对应于源功率，偏置功率和室压力的目标值。源功率，偏置功率和室压力分别设置为其相应的目标值。

5. 发明授权

US07846497B2 Method and apparatus for controlling gas flow to a processing chamber 有权
公开(公告)号：US07846497B2
公开(公告)日：2010-12-07
申请号：US11678623
申请日：2007-02-26
申请人： Ezra Robert Gold , Richard Charles Fovell , James Patrick Cruse , Jared Ahmad Lee , Bruno Geoffrion , Douglas Arthur Buchberger , Martin J. Salinas
发明人： Ezra Robert Gold , Richard Charles Fovell , James Patrick Cruse , Jared Ahmad Lee , Bruno Geoffrion , Douglas Arthur Buchberger , Martin J. Salinas
IPC分类号： C23C16/00 , F17D1/00 , F17D1/02
CPC分类号： C23C16/52 , C23C16/4412 , C23C16/455 , H01L21/67098 , H01L21/67103 , H01L21/67109 , H01L21/67115 , Y10T137/0318 , Y10T137/0324 , Y10T137/87249
摘要： A method and apparatus for delivering gases to a semiconductor processing system are provided. In one embodiment, an apparatus for delivering gases to a semiconductor processing system includes a plurality of gas input and output lines having inlet and outlet ports. Connecting lines couple respective pairs of the gas input and gas output lines. Connecting valves are arranged to control flow through the respective connecting lines. Mass gas flow controllers are arranged to control flow into respective inlet ports. In another embodiment, a method includes providing a manifold having at least a plurality of inlet that may be selectively coupled to at least one of a plurality of outlets, flowing one or more gases through the manifold to a vacuum environment by-passing the processing chamber prior to processing or to a calibration circuit, and flowing the one or more gases into the processing chamber during substrate processing.

6. 发明申请

US20080202610A1 METHOD AND APPARATUS FOR CONTROLLING GAS FLOW TO A PROCESSING CHAMBER 有权
公开(公告)号：US20080202610A1
公开(公告)日：2008-08-28
申请号：US11678622
申请日：2007-02-26
申请人： Ezra Robert Gold , Richard Charles Fovell , James Patrick Cruse , Jared Ahmad Lee , Bruno Geoffrion , Douglas Arthur Buchberger , Martin J. Salinas
发明人： Ezra Robert Gold , Richard Charles Fovell , James Patrick Cruse , Jared Ahmad Lee , Bruno Geoffrion , Douglas Arthur Buchberger , Martin J. Salinas
IPC分类号： F16K21/00
CPC分类号： H01J37/3244 , H01J37/32449 , H01L21/67098 , H01L21/67103 , H01L21/67109 , H01L21/67115 , Y10T137/7761 , Y10T137/87249
摘要： A method and apparatus for delivering gases to a semiconductor processing system are provided. In one embodiment, an apparatus for delivering gases to a semiconductor processing system includes a plurality of gas input and output lines having inlet and outlet ports. Connecting lines couple respective pairs of the gas input and gas output lines. Connecting valves are arranged to control flow through the respective connecting lines. Mass gas flow controllers are arranged to control flow into respective inlet ports. In another embodiment, a method includes providing a manifold having at least a plurality of inlet that may be selectively coupled to at least one of a plurality of outlets, flowing one or more gases through the manifold to a vacuum environment by-passing the processing chamber prior to processing or to a calibration circuit, and flowing the one or more gases into the processing chamber during substrate processing.

7. 发明授权

US08616224B2 Methods and apparatus for providing a gas mixture to a pair of process chambers 失效
标题翻译：将气体混合物提供给一对处理室的方法和装置
公开(公告)号：US08616224B2
公开(公告)日：2013-12-31
申请号：US12907944
申请日：2010-10-19
申请人： Jared Ahmad Lee , Martin Jeff Salinas , Ezra Robert Gold , James P. Cruse
发明人： Jared Ahmad Lee , Martin Jeff Salinas , Ezra Robert Gold , James P. Cruse
IPC分类号： B08B3/00
CPC分类号： F17D3/03 , H01J37/3244 , H01J37/32899 , H01L21/02071 , H01L21/6719 , H01L21/67201 , Y10T137/0318 , Y10T137/877
摘要： A method and apparatus for supplying a gas mixture to a load lock chamber is described. In one embodiment, the apparatus supplies a gas mixture to a pair of process chambers, comprising a first ozone generator to provide a first gas mixture to a first process chamber, a second ozone generator to provide a second gas mixture to a second process chamber, a first gas source coupled to the first ozone generator via a first mass flow controller and a first gas line, and coupled to the second ozone generator via a second mass flow controller and a second gas line, and a second gas source coupled to the first ozone generator via a third mass flow controller and a third gas line and coupled to the second ozone generator via fourth mass flow controller and a fourth gas line.
摘要翻译：描述了一种将气体混合物供应到负载锁定室的方法和装置。在一个实施例中，该装置将气体混合物提供给一对处理室，包括第一臭氧发生器以向第一处理室提供第一气体混合物，第二臭氧发生器将第二气体混合物提供给第二处理室，第一气体源，经由第一质量流量控制器和第一气体管线耦合到第一臭氧发生器，并且经由第二质量流量控制器和第二气体管线耦合到第二臭氧发生器，以及耦合到第一气体源的第一气体源臭氧发生器，经由第三质量流量控制器和第三气体管线，并经由第四质量流量控制器和第四气体管线与第二臭氧发生器连接。

8. 发明授权

US08616043B2 Methods and apparatus for calibrating pressure gauges in a substrate processing system 有权
标题翻译：在基板处理系统中校准压力表的方法和装置
公开(公告)号：US08616043B2
公开(公告)日：2013-12-31
申请号：US12916450
申请日：2010-10-29
申请人： James P. Cruse , Ezra Robert Gold , Jared Ahmad Lee , Ming Xu
发明人： James P. Cruse , Ezra Robert Gold , Jared Ahmad Lee , Ming Xu
IPC分类号： G01L27/02
CPC分类号： G01L27/005 , H01L21/67253 , Y10T137/86083
摘要： Systems and methods for calibrating pressure gauges in one or more process chambers coupled to a transfer chamber having a transfer volume is disclosed herein. The method includes providing a first pressure in the transfer volume and in a first inner volume of a first process chamber coupled to the transfer chamber, wherein the transfer volume and the first inner volume are fluidly coupled, injecting a calibration gas into the transfer volume to raise a pressure in the transfer volume and in the first inner volume to a second pressure, measuring the second pressure using each of a reference pressure gauge coupled to the transfer chamber and a first pressure gauge coupled to the first process chamber while the transfer volume and the first inner volume are fluidly coupled, and calibrating the first pressure gauge based on a difference in the measured second pressure between the reference pressure gauge and the first pressure gauge.
摘要翻译：本文公开了用于校准耦合到具有转移体积的转移室的一个或多个处理室中的压力计的系统和方法。该方法包括在传送体积和连接到传送室的第一处理室的第一内部容积中提供第一压力，其中传送体积和第一内部体积被流体耦合，将校准气体注入到传送体积中将传送体积和第一内部体积中的压力提高到第二压力，使用耦合到传送室的参考压力表中的每一个测量第二压力，以及耦合到第一处理室的第一压力表，同时传送体积和第一内部体积流体耦合，并且基于测量的参考压力计和第一压力计之间的第二压力的差异校准第一压力计。

9. 发明授权

US07743670B2 Method and apparatus for gas flow measurement 有权
标题翻译：气流测量方法和装置
公开(公告)号：US07743670B2
公开(公告)日：2010-06-29
申请号：US11833623
申请日：2007-08-03
申请人： Jared Ahmed Lee , Ezra Robert Gold , Chunlei Zhang , James Patrick Cruse , Richard Charles Fovell
发明人： Jared Ahmed Lee , Ezra Robert Gold , Chunlei Zhang , James Patrick Cruse , Richard Charles Fovell
IPC分类号： G01F1/56 , C25D7/12
CPC分类号： G01F25/0053 , G01F25/0038 , Y10T137/0368 , Y10T137/7761
摘要： A method and apparatus for measuring gas flow are provided. In one embodiment, a calibration circuit for gas control may be utilized to verify and/or calibrate gas flows utilized for backside cooling, process gas delivery, purge gas delivery, cleaning agent delivery, carrier gases delivery and remediation gas delivery, among others.
摘要翻译：提供了一种测量气体流量的方法和装置。在一个实施例中，用于气体控制的校准电路可用于验证和/或校准用于后侧冷却，处理气体输送，吹扫气体输送，清洁剂输送，载气输送和修复气体输送等的气体流。

10. 发明申请

US20090250335A1 Method of controlling plasma distribution uniformity by superposition of different constant solenoid fields 审中-公开
标题翻译：通过叠加不同恒定电磁场控制等离子体分布均匀性的方法
公开(公告)号：US20090250335A1
公开(公告)日：2009-10-08
申请号：US12082097
申请日：2008-04-07
申请人： Daniel J. Hoffman , Ezra Robert Gold , Douglas H. Burns , Douglas A. Buchberger, JR. , Michael Charles Kutney , Jang Gyoo Yang
发明人： Daniel J. Hoffman , Ezra Robert Gold , Douglas H. Burns , Douglas A. Buchberger, JR. , Michael Charles Kutney , Jang Gyoo Yang
IPC分类号： H05H1/24
CPC分类号： H05H1/46 , H01J37/32091 , H01J37/32706
摘要： A method for processing a workpiece in a plasma reactor having a set of n coils includes constructing, for each one of the n coils, a set of plasma distributions for discrete values of coil current in a predetermined current range. The distributions are grouped, each group having one distribution for each of the n coils, and being a unique set of n distributions. A combined plasma distribution is computed from each group of distributions. The variance of each combined distribution is computed. The method further includes finding an optimum one of the combined distributions having an at least nearly minimum variance, and identifying the n coil currents associated with the optimum distribution. During plasma processing of the workpiece, currents through the coils are maintained at levels corresponding to the n coil currents associated with the one combined distribution.
摘要翻译：一种用于处理具有一组n个线圈的等离子体电抗器中的工件的方法包括为n个线圈中的每个线圈构建用于在预定电流范围内的线圈电流的离散值的一组等离子体分布。分布分组，每组具有n个线圈中的每一个的一个分布，并且是n个分布的唯一集合。从每组分布计算组合等离子体分布。计算每个组合分布的方差。该方法还包括找到具有至少接近最小方差的组合分布中的最佳一个，并且识别与最佳分布相关联的n个线圈电流。在工件的等离子体处理期间，通过线圈的电流保持在与一个组合分布相关联的n个线圈电流的水平。

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