专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06953753B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06953753B2
公开(公告)日：2005-10-11
申请号：US10373964
申请日：2003-02-27
申请人： Junji Oohara , Kazuhiko Kano , Hiroshi Muto
发明人： Junji Oohara , Kazuhiko Kano , Hiroshi Muto
IPC分类号： B81B3/00 , B81C1/00 , G01P15/08 , G01P15/125 , H01L29/84 , H01L21/302
CPC分类号： B81C1/0019 , B81B2201/0235 , B81B2203/033 , B81C1/00579 , B81C2201/0132 , G01P15/0802 , G01P15/125 , G01P2015/0814 , Y10T428/169
摘要： A method for manufacturing a semiconductor device having a movable unit includes a step of forming an SOI substrate that includes a semiconductor substrate, an insulating layer, and a semiconductor layer such that the insulating layer is located between the semiconductor layer and the semiconductor substrate. The method further includes a step of dry etching the semiconductor layer to form a trench with a charge prevented from building up on a surface of the insulating layer that is exposed at a bottom of the trench during the dry etching. The method further includes a step of dry etching a sidewall defining the trench at a portion adjacent to the bottom of the trench to form the movable unit. The later dry etching is performed with a charge building up on the surface of the insulating layer such that etching ions strike to etch the portion of the sidewall.
摘要翻译：一种具有可移动单元的半导体器件的制造方法包括：形成包括半导体衬底，绝缘层和半导体层的SOI衬底的步骤，使得绝缘层位于半导体层和半导体衬底之间。该方法还包括干法蚀刻半导体层以形成沟槽的步骤，其中在干蚀刻期间，在沟槽底部露出的绝缘层的表面上阻止电荷积聚。该方法还包括在邻近沟槽底部的部分干蚀刻限定沟槽的侧壁以形成可移动单元的步骤。稍后的干法蚀刻是通过在绝缘层的表面上积聚的电荷进行的，使得蚀刻离子发生蚀刻以蚀刻侧壁的一部分。

2. 发明授权

US06906394B2 Method of manufacturing semiconductor device capable of sensing dynamic quantity 有权
标题翻译：能够感测动态量的半导体器件的制造方法
公开(公告)号：US06906394B2
公开(公告)日：2005-06-14
申请号：US10448277
申请日：2003-05-30
申请人： Hiroshi Muto , Tsuyoshi Fukada , Kenichi Ao , Minekazu Sakai , Yukihiro Takeuchi , Kazuhiko Kano , Junji Oohara
发明人： Hiroshi Muto , Tsuyoshi Fukada , Kenichi Ao , Minekazu Sakai , Yukihiro Takeuchi , Kazuhiko Kano , Junji Oohara
IPC分类号： G01P15/125 , B81B3/00 , H01L21/302 , H01L21/3065 , H01L21/762 , H01L29/84 , H01L27/01
CPC分类号： B81C1/00936 , B81B2203/0136 , B81C1/0019 , B81C1/00531 , B81C2201/0132 , G01P2015/0814 , H01L21/76232 , H01L21/76264 , H01L21/76283
摘要： A method of manufacturing a semiconductor device is provided. The device is manufactured with use of an SOI (Silicon On Insulator) substrate having a first silicon layer, an oxide layer, and a second silicon layer laminated in this order. After forming a trench reaching the oxide layer from the second silicon layer, dry etching is performed, thus allowing the oxide layer located at the trench bottom to be charged at first. This charging forces etching ions to impinge upon part of the second silicon layer located laterally to the trench bottom. Such part is removed, forming a movable section. For example, ions to neutralize the electric charges are administered into the trench, so that the electric charges are removed from charged movable electrodes and their charged surrounding regions. Removing the electric charges prevents the movable section to stick to its surrounding portions.
摘要翻译：提供一种制造半导体器件的方法。使用具有按顺序层叠的第一硅层，氧化物层和第二硅层的SOI（绝缘体上硅）基板来制造器件。在形成从第二硅层到达氧化物层的沟槽之后，进行干蚀刻，从而允许首先将位于沟槽底部的氧化物层充电。该充电迫使蚀刻离子撞击位于沟槽底部横向的第二硅层的一部分。去除这样的部件，形成可动部分。例如，中和电荷的离子被施加到沟槽中，使得电荷从带电的可移动电极及其带电的周围区域中去除。拆卸电荷可防止可动部分粘附到其周围部分。

3. 发明授权

US06753201B2 Method of manufacturing semiconductor device capable of sensing dynamic quantity 有权
标题翻译：能够感测动态量的半导体器件的制造方法
公开(公告)号：US06753201B2
公开(公告)日：2004-06-22
申请号：US10154784
申请日：2002-05-28
申请人： Hiroshi Muto , Tsuyoshi Fukada , Kenichi Ao , Minekazu Sakai , Yukihiro Takeuchi , Kazuhiko Kano , Junji Oohara
发明人： Hiroshi Muto , Tsuyoshi Fukada , Kenichi Ao , Minekazu Sakai , Yukihiro Takeuchi , Kazuhiko Kano , Junji Oohara
IPC分类号： H01L2100
CPC分类号： B81C1/00936 , B81B2203/0136 , B81C1/0019 , B81C1/00531 , B81C2201/0132 , G01P2015/0814 , H01L21/76232 , H01L21/76264 , H01L21/76283
摘要： A method of manufacturing a semiconductor device is provided. The device is manufactured with use of an SOI (Silicon On Insulator) substrate having a first silicon layer, an oxide layer, and a second silicon layer laminated in this order. After forming a trench reaching the oxide layer from the second silicon layer, dry etching is performed, thus allowing the oxide layer located at the trench bottom to be charged at first. This charging forces etching ions to impinge upon part of the second silicon layer located laterally to the trench bottom. Such part is removed, forming a movable section. For example, ions to neutralize the electric charges are administered into the trench, so that the electric charges are removed from charged movable electrodes and their charged surrounding regions. Removing the electric charges prevents the movable section to stick to its surrounding portions.
摘要翻译：提供一种制造半导体器件的方法。使用具有按顺序层叠的第一硅层，氧化物层和第二硅层的SOI（绝缘体上硅）基板来制造器件。在形成从第二硅层到达氧化物层的沟槽之后，进行干蚀刻，从而允许首先将位于沟槽底部的氧化物层充电。该充电迫使蚀刻离子撞击位于沟槽底部横向的第二硅层的一部分。去除这样的部件，形成可动部分。例如，中和电荷的离子被施加到沟槽中，使得电荷从带电的可移动电极及其带电的周围区域中去除。拆卸电荷可防止可动部分粘附到其周围部分。

4. 发明授权

US06713403B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06713403B2
公开(公告)日：2004-03-30
申请号：US10384562
申请日：2003-03-11
申请人： Junji Oohara , Kazuhiko Kano , Hiroshi Muto
发明人： Junji Oohara , Kazuhiko Kano , Hiroshi Muto
IPC分类号： H01L2100
CPC分类号： B81C1/0019 , B81C1/00579 , B81C1/00626 , B81C2201/0132 , G01P15/0802 , G01P15/125 , G01P2015/0814
摘要： A method for manufacturing a semiconductor device having a movable unit includes a step of forming an SOI substrate that includes a semiconductor substrate, an insulating layer, and a semiconductor layer. The method further includes a step of dry etching the semiconductor layer to form a trench and a step of dry etching a sidewall defining the trench at a portion adjacent to a bottom of the trench to form the movable unit. The later dry etching is implemented with a charge building up on a surface of the insulating layer that is exposed during the former dry etching to etch the portion. In addition, the later dry etching is implemented at an etching rate higher than that at which the former dry etching is implemented to reduce the deposition amount of a protection film deposited on a reverse side of the movable unit during the later dry etching.
摘要翻译：一种制造具有可移动单元的半导体器件的方法包括形成包括半导体衬底，绝缘层和半导体层的SOI衬底的步骤。该方法还包括干法蚀刻半导体层以形成沟槽的步骤，以及在邻近沟槽底部的部分干蚀刻限定沟槽的侧壁以形成可移动单元的步骤。稍后的干蚀刻通过在前一次干蚀刻中暴露的绝缘层的表面上积累的电荷来实现，以蚀刻该部分。此外，稍后的干蚀刻以比实施前述干蚀刻的蚀刻速率更高的蚀刻速率来实现，以减少在稍后的干蚀刻期间沉积在可移动单元的反面上的保护膜的沉积量。

5. 发明授权

US07129176B2 Optical device having micro lens array and method for manufacturing the same 有权
标题翻译：具有微透镜阵列的光学装置及其制造方法
公开(公告)号：US07129176B2
公开(公告)日：2006-10-31
申请号：US10759025
申请日：2004-01-20
申请人： Junji Oohara , Kazuhiko Kano , Yoshitaka Noda , Yukihiro Takeuchi , Toshiyuki Morishita
发明人： Junji Oohara , Kazuhiko Kano , Yoshitaka Noda , Yukihiro Takeuchi , Toshiyuki Morishita
IPC分类号： H01L21/027
CPC分类号： H01L27/14625 , G02B6/4249 , H01L27/14627 , H01L27/14685
摘要： An optical device includes a semiconductor substrate and an optical part having a plurality of columnar members disposed on the substrate. Each columnar member is disposed in a standing manner and adhered each other so that the optical part is provided. The optical part is integrated with the substrate. This optical part has high design freedom.
摘要翻译：光学器件包括半导体衬底和具有设置在衬底上的多个柱状构件的光学部件。每个柱状构件以立式的方式设置并彼此粘合，从而设置光学部件。光学部件与基板一体化。该光学部件具有高设计自由度。

6. 发明授权

US07532404B2 Optical device having micro lens array 有权
标题翻译：具有微透镜阵列的光学装置
公开(公告)号：US07532404B2
公开(公告)日：2009-05-12
申请号：US11528611
申请日：2006-09-28
申请人： Junji Oohara , Kazuhiko Kano , Yoshitaka Noda , Yukihiko Takeuchi , Toshiyuki Morishita
发明人： Junji Oohara , Kazuhiko Kano , Yoshitaka Noda , Yukihiko Takeuchi , Toshiyuki Morishita
IPC分类号： G02B27/10 , G02B6/32
CPC分类号： H01L27/14625 , G02B6/4249 , H01L27/14627 , H01L27/14685
摘要： An optical device includes a semiconductor substrate and an optical part having a plurality of columnar members disposed on the substrate. Each columnar member is disposed in a standing manner and adhered each other so that the optical part is provided. The optical part is integrated with the substrate. This optical part has high design freedom.
摘要翻译：光学器件包括半导体衬底和具有设置在衬底上的多个柱状构件的光学部件。每个柱状构件以立式的方式设置并彼此粘合，从而设置光学部件。光学部件与基板一体化。该光学部件具有高设计自由度。

7. 发明申请

US20070019406A1 OPTICAL DEVICE HAVING MICRO LENS ARRAY 有权
标题翻译：具有微透镜阵列的光学器件
公开(公告)号：US20070019406A1
公开(公告)日：2007-01-25
申请号：US11528611
申请日：2006-09-28
申请人： Junji Oohara , Kazuhiko Kano , Yoshitaka Noda , Yukihiro Takeuchi , Toshiyuki Morishita
发明人： Junji Oohara , Kazuhiko Kano , Yoshitaka Noda , Yukihiro Takeuchi , Toshiyuki Morishita
IPC分类号： F21V7/00
CPC分类号： H01L27/14625 , G02B6/4249 , H01L27/14627 , H01L27/14685
摘要： An optical device includes a semiconductor substrate and an optical part having a plurality of columnar members disposed on the substrate. Each columnar member is disposed in a standing manner and adhered each other so that the optical part is provided. The optical part is integrated with the substrate. This optical part has high design freedom.
摘要翻译：光学器件包括半导体衬底和具有设置在衬底上的多个柱状构件的光学部件。每个柱状构件以立式的方式设置并彼此粘合，从而设置光学部件。光学部件与基板一体化。该光学部件具有高设计自由度。

8. 发明申请

US20050054153A1 Method for manufacturing movable portion of semiconductor device 有权
标题翻译：制造半导体器件的可移动部分的方法
公开(公告)号：US20050054153A1
公开(公告)日：2005-03-10
申请号：US10936539
申请日：2004-09-09
申请人： Kazushi Asami , Junji Oohara , Hiroshi Muto , Kazuhiko Sugiura , Tsuyoshi Fukada , Yukihiro Takeuchi
发明人： Kazushi Asami , Junji Oohara , Hiroshi Muto , Kazuhiko Sugiura , Tsuyoshi Fukada , Yukihiro Takeuchi
IPC分类号： B81C1/00 , H01L21/306 , H01L29/80 , H05K3/06
CPC分类号： B81C1/00619 , B81C2201/0112
摘要： A method for manufacturing a semiconductor device having a movable portion includes the steps of: forming a trench on a semiconductor layer so that the trench reaches an insulation layer; and forming a movable portion by etching a sidewall of the trench so that the semiconductor layer is separated from the insulation layer. The steps of forming the trench and forming the movable portion are performed by a reactive ion etching method. The insulation layer disposed on the bottom of the trench is prevented from charging positively in the step of forming the trench. The insulation layer disposed on the bottom of the trench is charged positively in the step of forming the movable portion.
摘要翻译：一种制造具有可移动部分的半导体器件的方法包括以下步骤：在半导体层上形成沟槽，使得沟槽到达绝缘层; 以及通过蚀刻沟槽的侧壁形成可动部分，使得半导体层与绝缘层分离。通过反应离子蚀刻方法进行形成沟槽并形成可动部的步骤。在形成沟槽的步骤中，防止设置在沟槽底部的绝缘层被正面地充电。设置在沟槽底部的绝缘层在形成可移动部分的步骤中被正向地充电。

9. 发明授权

US07214625B2 Method for manufacturing movable portion of semiconductor device 有权
标题翻译：制造半导体器件的可移动部分的方法
公开(公告)号：US07214625B2
公开(公告)日：2007-05-08
申请号：US10936539
申请日：2004-09-09
申请人： Kazushi Asami , Junji Oohara , Hiroshi Muto , Kazuhiko Sugiura , Tsuyoshi Fukada , Yukihiro Takeuchi
发明人： Kazushi Asami , Junji Oohara , Hiroshi Muto , Kazuhiko Sugiura , Tsuyoshi Fukada , Yukihiro Takeuchi
IPC分类号： H01L21/302 , H01L21/461 , H01L29/82
CPC分类号： B81C1/00619 , B81C2201/0112
摘要： A method for manufacturing a semiconductor device having a movable portion includes the steps of: forming a trench on a semiconductor layer so that the trench reaches an insulation layer; and forming a movable portion by etching a sidewall of the trench so that the semiconductor layer is separated from the insulation layer. The steps of forming the trench and forming the movable portion are performed by a reactive ion etching method. The insulation layer disposed on the bottom of the trench is prevented from charging positively in the step of forming the trench. The insulation layer disposed on the bottom of the trench is charged positively in the step of forming the movable portion.
摘要翻译：一种制造具有可移动部分的半导体器件的方法包括以下步骤：在半导体层上形成沟槽，使得沟槽到达绝缘层; 以及通过蚀刻沟槽的侧壁形成可动部分，使得半导体层与绝缘层分离。通过反应离子蚀刻方法进行形成沟槽并形成可动部的步骤。在形成沟槽的步骤中，防止设置在沟槽底部的绝缘层被正面地充电。设置在沟槽底部的绝缘层在形成可移动部分的步骤中被正向地充电。

10. 发明申请

US20070251915A1 Optical device and method for manufacturing the same 有权
标题翻译：光学装置及其制造方法
公开(公告)号：US20070251915A1
公开(公告)日：2007-11-01
申请号：US11783434
申请日：2007-04-10
申请人： Junji Oohara , Hisaya Katoh , Toshiyuki Morishita , Yukihiro Takeuchi
发明人： Junji Oohara , Hisaya Katoh , Toshiyuki Morishita , Yukihiro Takeuchi
IPC分类号： B29D11/00
CPC分类号： G02B3/06 , G02B6/124 , G03F7/0005
摘要： A method of manufacturing an optical device includes: a first step of forming an optical-device forming body that includes a plurality of columnar structures arranged in an arrangement direction on a substrate surface via a trench and an outline structure connected to and containing therein the plurality of columnar structures; a second step of oxidizing the optical-device forming body from a state where the optical-device forming body starts to be oxidized to a state where the columnar structure is oxidized; and a third step in which an unoxidized residual part of the outline structure in the second step is oxidized after the second step so as to form an oxidized body. Furthermore, the third step includes restraining the outline structure from being deformed with respect to at least the arrangement direction of the columnar structures in the third step.
摘要翻译：一种制造光学器件的方法包括：第一步骤，形成光学器件形成体，该光学器件形成体包括通过沟槽在衬底表面上沿排列方向布置的多个柱状结构，以及轮廓结构，其连接到并包含多个的柱状结构; 从光学装置形成体开始氧化到柱状结构被氧化的状态的氧化光学元件形成体的第二工序; 以及第三步骤，其中第二步骤中的轮廓结构的未氧化残余部分在第二步骤之后被氧化以形成氧化体。此外，第三步骤包括在第三步骤中限制轮廓结构相对于至少柱状结构的排列方向变形。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式