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1. 发明申请

US20070019406A1 OPTICAL DEVICE HAVING MICRO LENS ARRAY 有权
标题翻译：具有微透镜阵列的光学器件
公开(公告)号：US20070019406A1
公开(公告)日：2007-01-25
申请号：US11528611
申请日：2006-09-28
申请人： Junji Oohara , Kazuhiko Kano , Yoshitaka Noda , Yukihiro Takeuchi , Toshiyuki Morishita
发明人： Junji Oohara , Kazuhiko Kano , Yoshitaka Noda , Yukihiro Takeuchi , Toshiyuki Morishita
IPC分类号： F21V7/00
CPC分类号： H01L27/14625 , G02B6/4249 , H01L27/14627 , H01L27/14685
摘要： An optical device includes a semiconductor substrate and an optical part having a plurality of columnar members disposed on the substrate. Each columnar member is disposed in a standing manner and adhered each other so that the optical part is provided. The optical part is integrated with the substrate. This optical part has high design freedom.
摘要翻译：光学器件包括半导体衬底和具有设置在衬底上的多个柱状构件的光学部件。每个柱状构件以立式的方式设置并彼此粘合，从而设置光学部件。光学部件与基板一体化。该光学部件具有高设计自由度。

2. 发明授权

US07129176B2 Optical device having micro lens array and method for manufacturing the same 有权
标题翻译：具有微透镜阵列的光学装置及其制造方法
公开(公告)号：US07129176B2
公开(公告)日：2006-10-31
申请号：US10759025
申请日：2004-01-20
申请人： Junji Oohara , Kazuhiko Kano , Yoshitaka Noda , Yukihiro Takeuchi , Toshiyuki Morishita
发明人： Junji Oohara , Kazuhiko Kano , Yoshitaka Noda , Yukihiro Takeuchi , Toshiyuki Morishita
IPC分类号： H01L21/027
CPC分类号： H01L27/14625 , G02B6/4249 , H01L27/14627 , H01L27/14685
摘要： An optical device includes a semiconductor substrate and an optical part having a plurality of columnar members disposed on the substrate. Each columnar member is disposed in a standing manner and adhered each other so that the optical part is provided. The optical part is integrated with the substrate. This optical part has high design freedom.
摘要翻译：光学器件包括半导体衬底和具有设置在衬底上的多个柱状构件的光学部件。每个柱状构件以立式的方式设置并彼此粘合，从而设置光学部件。光学部件与基板一体化。该光学部件具有高设计自由度。

3. 发明申请

US20070251915A1 Optical device and method for manufacturing the same 有权
标题翻译：光学装置及其制造方法
公开(公告)号：US20070251915A1
公开(公告)日：2007-11-01
申请号：US11783434
申请日：2007-04-10
申请人： Junji Oohara , Hisaya Katoh , Toshiyuki Morishita , Yukihiro Takeuchi
发明人： Junji Oohara , Hisaya Katoh , Toshiyuki Morishita , Yukihiro Takeuchi
IPC分类号： B29D11/00
CPC分类号： G02B3/06 , G02B6/124 , G03F7/0005
摘要： A method of manufacturing an optical device includes: a first step of forming an optical-device forming body that includes a plurality of columnar structures arranged in an arrangement direction on a substrate surface via a trench and an outline structure connected to and containing therein the plurality of columnar structures; a second step of oxidizing the optical-device forming body from a state where the optical-device forming body starts to be oxidized to a state where the columnar structure is oxidized; and a third step in which an unoxidized residual part of the outline structure in the second step is oxidized after the second step so as to form an oxidized body. Furthermore, the third step includes restraining the outline structure from being deformed with respect to at least the arrangement direction of the columnar structures in the third step.
摘要翻译：一种制造光学器件的方法包括：第一步骤，形成光学器件形成体，该光学器件形成体包括通过沟槽在衬底表面上沿排列方向布置的多个柱状结构，以及轮廓结构，其连接到并包含多个的柱状结构; 从光学装置形成体开始氧化到柱状结构被氧化的状态的氧化光学元件形成体的第二工序; 以及第三步骤，其中第二步骤中的轮廓结构的未氧化残余部分在第二步骤之后被氧化以形成氧化体。此外，第三步骤包括在第三步骤中限制轮廓结构相对于至少柱状结构的排列方向变形。

4. 发明授权

US06753201B2 Method of manufacturing semiconductor device capable of sensing dynamic quantity 有权
标题翻译：能够感测动态量的半导体器件的制造方法
公开(公告)号：US06753201B2
公开(公告)日：2004-06-22
申请号：US10154784
申请日：2002-05-28
申请人： Hiroshi Muto , Tsuyoshi Fukada , Kenichi Ao , Minekazu Sakai , Yukihiro Takeuchi , Kazuhiko Kano , Junji Oohara
发明人： Hiroshi Muto , Tsuyoshi Fukada , Kenichi Ao , Minekazu Sakai , Yukihiro Takeuchi , Kazuhiko Kano , Junji Oohara
IPC分类号： H01L2100
CPC分类号： B81C1/00936 , B81B2203/0136 , B81C1/0019 , B81C1/00531 , B81C2201/0132 , G01P2015/0814 , H01L21/76232 , H01L21/76264 , H01L21/76283
摘要： A method of manufacturing a semiconductor device is provided. The device is manufactured with use of an SOI (Silicon On Insulator) substrate having a first silicon layer, an oxide layer, and a second silicon layer laminated in this order. After forming a trench reaching the oxide layer from the second silicon layer, dry etching is performed, thus allowing the oxide layer located at the trench bottom to be charged at first. This charging forces etching ions to impinge upon part of the second silicon layer located laterally to the trench bottom. Such part is removed, forming a movable section. For example, ions to neutralize the electric charges are administered into the trench, so that the electric charges are removed from charged movable electrodes and their charged surrounding regions. Removing the electric charges prevents the movable section to stick to its surrounding portions.
摘要翻译：提供一种制造半导体器件的方法。使用具有按顺序层叠的第一硅层，氧化物层和第二硅层的SOI（绝缘体上硅）基板来制造器件。在形成从第二硅层到达氧化物层的沟槽之后，进行干蚀刻，从而允许首先将位于沟槽底部的氧化物层充电。该充电迫使蚀刻离子撞击位于沟槽底部横向的第二硅层的一部分。去除这样的部件，形成可动部分。例如，中和电荷的离子被施加到沟槽中，使得电荷从带电的可移动电极及其带电的周围区域中去除。拆卸电荷可防止可动部分粘附到其周围部分。

5. 发明授权

US06906394B2 Method of manufacturing semiconductor device capable of sensing dynamic quantity 有权
标题翻译：能够感测动态量的半导体器件的制造方法
公开(公告)号：US06906394B2
公开(公告)日：2005-06-14
申请号：US10448277
申请日：2003-05-30
申请人： Hiroshi Muto , Tsuyoshi Fukada , Kenichi Ao , Minekazu Sakai , Yukihiro Takeuchi , Kazuhiko Kano , Junji Oohara
发明人： Hiroshi Muto , Tsuyoshi Fukada , Kenichi Ao , Minekazu Sakai , Yukihiro Takeuchi , Kazuhiko Kano , Junji Oohara
IPC分类号： G01P15/125 , B81B3/00 , H01L21/302 , H01L21/3065 , H01L21/762 , H01L29/84 , H01L27/01
CPC分类号： B81C1/00936 , B81B2203/0136 , B81C1/0019 , B81C1/00531 , B81C2201/0132 , G01P2015/0814 , H01L21/76232 , H01L21/76264 , H01L21/76283
摘要： A method of manufacturing a semiconductor device is provided. The device is manufactured with use of an SOI (Silicon On Insulator) substrate having a first silicon layer, an oxide layer, and a second silicon layer laminated in this order. After forming a trench reaching the oxide layer from the second silicon layer, dry etching is performed, thus allowing the oxide layer located at the trench bottom to be charged at first. This charging forces etching ions to impinge upon part of the second silicon layer located laterally to the trench bottom. Such part is removed, forming a movable section. For example, ions to neutralize the electric charges are administered into the trench, so that the electric charges are removed from charged movable electrodes and their charged surrounding regions. Removing the electric charges prevents the movable section to stick to its surrounding portions.
摘要翻译：提供一种制造半导体器件的方法。使用具有按顺序层叠的第一硅层，氧化物层和第二硅层的SOI（绝缘体上硅）基板来制造器件。在形成从第二硅层到达氧化物层的沟槽之后，进行干蚀刻，从而允许首先将位于沟槽底部的氧化物层充电。该充电迫使蚀刻离子撞击位于沟槽底部横向的第二硅层的一部分。去除这样的部件，形成可动部分。例如，中和电荷的离子被施加到沟槽中，使得电荷从带电的可移动电极及其带电的周围区域中去除。拆卸电荷可防止可动部分粘附到其周围部分。

6. 发明授权

US07799588B2 Method of manufacturing the optical device by a stopper to form an oxide block 有权
标题翻译：通过塞子制造光学器件以形成氧化物块的方法
公开(公告)号：US07799588B2
公开(公告)日：2010-09-21
申请号：US11783434
申请日：2007-04-10
申请人： Junji Oohara , Hisaya Katoh , Toshiyuki Morishita , Yukihiro Takeuchi
发明人： Junji Oohara , Hisaya Katoh , Toshiyuki Morishita , Yukihiro Takeuchi
IPC分类号： H01L21/00
CPC分类号： G02B3/06 , G02B6/124 , G03F7/0005
摘要： A method of manufacturing an optical device includes: a first step of forming an optical-device forming body that includes a plurality of columnar structures arranged in an arrangement direction on a substrate surface via a trench and an outline structure connected to and containing therein the plurality of columnar structures; a second step of oxidizing the optical-device forming body from a state where the optical-device forming body starts to be oxidized to a state where the columnar structure is oxidized; and a third step in which an unoxidized residual part of the outline structure in the second step is oxidized after the second step so as to form an oxidized body. Furthermore, the third step includes restraining the outline structure from being deformed with respect to at least the arrangement direction of the columnar structures in the third step.
摘要翻译：一种制造光学器件的方法包括：第一步骤，形成光学器件形成体，该光学器件形成体包括通过沟槽在衬底表面上沿排列方向布置的多个柱状结构，以及轮廓结构，其连接到并包含多个的柱状结构; 从光学装置形成体开始氧化到柱状结构被氧化的状态的氧化光学元件形成体的第二工序; 以及第三步骤，其中第二步骤中的轮廓结构的未氧化残余部分在第二步骤之后被氧化以形成氧化体。此外，第三步骤包括在第三步骤中限制轮廓结构相对于至少柱状结构的排列方向变形。

7. 发明申请

US20050054153A1 Method for manufacturing movable portion of semiconductor device 有权
标题翻译：制造半导体器件的可移动部分的方法
公开(公告)号：US20050054153A1
公开(公告)日：2005-03-10
申请号：US10936539
申请日：2004-09-09
申请人： Kazushi Asami , Junji Oohara , Hiroshi Muto , Kazuhiko Sugiura , Tsuyoshi Fukada , Yukihiro Takeuchi
发明人： Kazushi Asami , Junji Oohara , Hiroshi Muto , Kazuhiko Sugiura , Tsuyoshi Fukada , Yukihiro Takeuchi
IPC分类号： B81C1/00 , H01L21/306 , H01L29/80 , H05K3/06
CPC分类号： B81C1/00619 , B81C2201/0112
摘要： A method for manufacturing a semiconductor device having a movable portion includes the steps of: forming a trench on a semiconductor layer so that the trench reaches an insulation layer; and forming a movable portion by etching a sidewall of the trench so that the semiconductor layer is separated from the insulation layer. The steps of forming the trench and forming the movable portion are performed by a reactive ion etching method. The insulation layer disposed on the bottom of the trench is prevented from charging positively in the step of forming the trench. The insulation layer disposed on the bottom of the trench is charged positively in the step of forming the movable portion.
摘要翻译：一种制造具有可移动部分的半导体器件的方法包括以下步骤：在半导体层上形成沟槽，使得沟槽到达绝缘层; 以及通过蚀刻沟槽的侧壁形成可动部分，使得半导体层与绝缘层分离。通过反应离子蚀刻方法进行形成沟槽并形成可动部的步骤。在形成沟槽的步骤中，防止设置在沟槽底部的绝缘层被正面地充电。设置在沟槽底部的绝缘层在形成可移动部分的步骤中被正向地充电。

8. 发明授权

US07540192B2 Physical quantity sensor having optical part and method for manufacturing the same 失效
标题翻译：具有光学部件的物理量传感器及其制造方法
公开(公告)号：US07540192B2
公开(公告)日：2009-06-02
申请号：US11505386
申请日：2006-08-17
申请人： Yukihiro Takeuchi , Junji Oohara
发明人： Yukihiro Takeuchi , Junji Oohara
IPC分类号： G01P15/125
CPC分类号： B81C1/00126 , B81B2201/047 , G01D5/285 , G02B26/0816
摘要： A method for manufacturing a physical quantity sensor having a movable portion, a support portion and an optical part is provided. The method includes steps of: etching a silicon substrate so that a movable-portion-to-be-formed portion, a support-portion-to-be-formed portion, and an optical-part-to-be-formed portion having a plurality of columns and trenches are formed; oxidizing the optical-part-to-be-formed portion so that each column changes to a silicon oxide column and the trench is filled with a silicon oxide layer; and removing a part of the movable-portion-to-be-formed portion connecting to the silicon substrate so that the movable portion is separated from the silicon substrate.
摘要翻译：提供一种用于制造具有可移动部分，支撑部分和光学部件的物理量传感器的方法。该方法包括以下步骤：蚀刻硅衬底，使得可移动部分成形部分，待形成部分，以及具有待形成部分的光学部件，其具有形成多个列和沟槽; 氧化形成光学部件的部分，使得每个列改变为氧化硅柱，并且沟槽填充有氧化硅层; 以及去除连接到硅衬底的可移动部分成形部分的一部分，使得可移动部分与硅衬底分离。

9. 发明授权

US07437036B2 Optical device and method for manufacturing the same 有权
标题翻译：光学装置及其制造方法
公开(公告)号：US07437036B2
公开(公告)日：2008-10-14
申请号：US11513072
申请日：2006-08-31
申请人： Junji Oohara , Yukihiro Takeuchi
发明人： Junji Oohara , Yukihiro Takeuchi
IPC分类号： G02B6/00 , G02B6/34 , G02B5/18
CPC分类号： G01L9/0076
摘要： A method for manufacturing an optical device is provided. The device includes an optical waveguide path having a Bragg grating and a movable portion disposed near the Bragg grating. A displacement of the movable portion provides a change of spacing of the Bragg grating so that a light passing through the optical waveguide path is changed. The optical device detects the physical quantity based on a change of the light. The method includes steps of: forming the optical waveguide path with the Bragg grating on a first part of a silicon substrate; and forming the movable portion on a second part of the silicon substrate.
摘要翻译：提供了一种制造光学器件的方法。该装置包括具有布拉格光栅的光波导路径和布置于布拉格光栅附近的可移动部分。可移动部分的位移提供了布拉格光栅的间隔的变化，使得通过光波导路径的光线改变。光学装置基于光的变化来检测物理量。该方法包括以下步骤：在硅衬底的第一部分上形成具有布拉格光栅的光波导路径; 以及在所述硅衬底的第二部分上形成所述可移动部分。

10. 发明申请

US20080130139A1 Optical device 有权
标题翻译：光学装置
公开(公告)号：US20080130139A1
公开(公告)日：2008-06-05
申请号：US11979362
申请日：2007-11-01
申请人： Junji Oohara , Yukihiro Takeuchi
发明人： Junji Oohara , Yukihiro Takeuchi
IPC分类号： G02B3/00
CPC分类号： G02B3/00 , G02B3/02
摘要： An optical device includes a silicon substrate, and multiple columnar members. The columnar members are integrally formed with the silicon substrate and stand on a top surface of the silicon substrate. The columnar members are made of silicon oxide. Light enters the columnar members in a first direction and propagates through the columnar members in a second direction. The columnar members extend in a third direction. The columnar members are arranged with a gap in the second direction. The second direction is perpendicular to the third direction. An angle between the first and third directions is greater than a critical angle and equal to or less than 90 degrees.
摘要翻译：光学器件包括硅衬底和多个柱状构件。柱状构件与硅衬底一体地形成并且站立在硅衬底的顶表面上。柱状构件由氧化硅制成。光沿第一方向进入柱状构件，并沿着第二方向传播通过柱状构件。柱状构件沿第三方向延伸。柱状构件在第二方向上布置有间隙。第二方向垂直于第三方向。第一和第三方向之间的角度大于临界角度并且等于或小于90度。

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