会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明申请
    • Method for forming metallic interconnects in semiconductor devices
    • 在半导体器件中形成金属互连的方法
    • US20050142843A1
    • 2005-06-30
    • US11026756
    • 2004-12-30
    • Yong Ahn
    • Yong Ahn
    • H01L21/28B32B15/04H01L21/3205H01L21/44H01L21/4763H01L21/768
    • H01L21/76838H01L21/32051
    • A method for forming a metallic interconnect in a semiconductor device is disclosed. An example method forms an IDL on a substrate including predetermined devices, forms a via hole in the IDL, depositing a first metal diffusion preventive layer and a metal layer to form a via plug on the IDL, and performs a planarization process using the first metal diffusion preventive layer using as an etching stop layer. In addition, the example method forms a metallic interconnect on the first metal diffusion preventive layer, deposits the other metal diffusion preventive layer on the metallic interconnect, and etches a predetermined part of first and second metal diffusion preventive layers and the metallic interconnect using a mask pattern.
    • 公开了一种在半导体器件中形成金属互连的方法。 示例性方法在包括预定装置的基板上形成IDL,在IDL中形成通孔,沉积第一金属防扩散层和金属层以在IDL上形成通孔塞,并且使用第一金属 扩散防止层用作蚀刻停止层。 此外,示例性方法在第一金属扩散防止层上形成金属互连,在金属互连上沉积另一金属扩散防止层,并使用掩模蚀刻第一和第二金属防扩散层和金属互连的预定部分 模式。
    • 5. 发明申请
    • Washing apparatus
    • 洗衣机
    • US20060081014A1
    • 2006-04-20
    • US11221913
    • 2005-09-09
    • Dong ChoiSoo KimKyu LeeYong AhnMin Kim
    • Dong ChoiSoo KimKyu LeeYong AhnMin Kim
    • D06F37/00D06F39/00
    • D06F39/12D06F39/081
    • Disclosed herein is a washing apparatus in which the top of a base pan is inclined downward toward a mounting position of a water leakage sensor, so that water, dropped onto the base pan, is gathered toward the water leakage sensor regardless of a water drop position, thereby enabling prompt operation of the water leakage sensor and achieving an enhancement in reliability. Furthermore, the washing apparatus comprises holders by which the water leakage sensor is vertically caught after being vertically press fitted to the base pan, thereby enabling the water leakage sensor to be mounted to the base pan via a single vertical press-fitting operation, resulting in an enhancement in assembling efficiency.
    • 这里公开了一种洗涤装置,其中底盘的顶部朝向漏水传感器的安装位置向下倾斜,使得落在底盘上的水聚集到漏水传感器,而不管水滴位置如何 从而能够及时地进行漏水传感器的动作,提高可靠性。 此外,洗涤装置包括保持器,在垂直压配合到底盘之后,使漏水传感器垂直卡止,从而使漏水传感器能够通过单个垂直压配合操作而安装到底盘上,导致 提高组装效率。
    • 6. 发明申请
    • Method of forming double gate dielectric layers and semiconductor device having the same
    • 形成双栅极电介质层的方法和具有该双栅极电介质层的半导体器件
    • US20060138571A1
    • 2006-06-29
    • US11319531
    • 2005-12-29
    • Yong Ahn
    • Yong Ahn
    • H01L21/8238H01L29/94
    • H01L29/518H01L21/28202H01L21/28211H01L21/823462H01L29/513H01L29/7833
    • A method of forming double gate dielectric layers composed of an underlying oxide layer and an overlying oxy-nitride layer is provided to prevent degradation of gate dielectric properties due to plasma-induced charges. In the method, the oxide layer is thermally grown on a silicon substrate under oxygen gas atmosphere to have a first thickness, and then the oxy-nitride layer is thermally grown on the oxide layer under nitrogen monoxide gas atmosphere to have a second thickness smaller than the first thickness. The substrate may have a high voltage area and a low voltage area, and the oxide layer may be partially etched in the low voltage area so as to have a reduced thickness. The oxy-nitride layer behaves like a barrier, blocking the inflow of the plasma-induced charges.
    • 提供了形成由下面的氧化物层和上覆的氮氧化物层构成的双栅极介电层的方法,以防止由于等离子体引起的电荷导致的栅极介电性能的劣化。 在该方法中,氧化层在氧气气氛下在硅衬底上热生长以具有第一厚度,然后氮氧化物层在一氧化氮气体气氛下在氧化物层上热生长以具有小于 第一厚度。 衬底可以具有高电压面积和低电压面积,并且氧化物层可以在低电压区域中被部分地蚀刻以具有减小的厚度。 氮氧化物层的作用就像阻挡层,阻止了等离子体引发的电荷的流入。