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1. 发明申请

US20060252171A1 Method of manufacturing silicon optoelectronic device, silicon optoelectronic device manufactured by the method, and image input and/or output apparatus using the silicon optoelectronic device 有权
公开(公告)号：US20060252171A1
公开(公告)日：2006-11-09
申请号：US11350751
申请日：2006-02-10
申请人： Eun-kyung Lee , Byoung-lyong Choi , Pil-soo Ahn , Jun-young Kim , Young-gu Jin
发明人： Eun-kyung Lee , Byoung-lyong Choi , Pil-soo Ahn , Jun-young Kim , Young-gu Jin
IPC分类号： H01L21/00 , A61B1/04 , H04N7/18
CPC分类号： H01L33/34 , B82Y10/00 , B82Y20/00 , B82Y30/00 , G01Q80/00 , H01L27/14601 , H01L27/14621 , H01L27/14645 , H01L27/14683 , H01L27/156 , H01L31/02363 , H01L31/028 , H01L31/035281 , H01L31/1804 , H01L33/0054 , H01L33/24 , Y02E10/547 , Y02P70/521
摘要： A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs. The silicon optoelectronic device has superior light-emitting efficiency, can be used as at least one of a light-emitting device and a light-receiving device, and has high wavelength selectivity. In addition, the silicon optoelectronic device panel having the two-dimensional array of the silicon optoelectronic devices can be applied in the image input and/or output apparatus capable of directly displaying an image and/or inputting optical information in a screen.

2. 发明授权

US07015560B2 Light-receiving device, method for manufacturing the same, and optoelectronic integrated circuit comprising the same 有权
标题翻译：光接收装置及其制造方法以及包括该光接收装置的光电集成电路
公开(公告)号：US07015560B2
公开(公告)日：2006-03-21
申请号：US10779741
申请日：2004-02-18
申请人： Jun-young Kim , Byoung-lyong Choi , Eun-kyung Lee
发明人： Jun-young Kim , Byoung-lyong Choi , Eun-kyung Lee
IPC分类号： H01L31/075
CPC分类号： H01L27/1446
摘要： A light-receiving device, a method for manufacturing the same, and an optoelectronic integrated circuit including the same are provided. The light-receiving device includes a substrate; an intrinsic region formed on the substrate; a first region formed to a shallow depth in the intrinsic region; and a second region formed to a deep depth in the intrinsic region and distanced from the first region, wherein the first and second regions are doped with different conductivity types. The light-receiving device can shorten the transit time of holes with slow mobility. Therefore, no response delay occurs, and thus, a high response speed can be accomplished.
摘要翻译：提供了一种光接收装置及其制造方法和包括该光接收装置的光电集成电路。光接收装置包括：基板; 形成在所述基板上的本征区域; 在本征区域中形成为浅深度的第一区域; 以及第二区域，其形成为本征区域中的深度并与第一区域隔开，其中第一和第二区域掺杂有不同的导电类型。光接收装置可以缩短移动性差的穿孔时间。因此，没有响应延迟发生，因此可以实现高响应速度。

3. 发明申请

US20050092244A1 Diffusion system 失效
标题翻译：扩散系统
公开(公告)号：US20050092244A1
公开(公告)日：2005-05-05
申请号：US10912059
申请日：2004-08-06
申请人： Jun-young Kim , Byoung-lyong Choi , Eun-kyung Lee
发明人： Jun-young Kim , Byoung-lyong Choi , Eun-kyung Lee
IPC分类号： H01L21/223 , C23C8/06 , C23C16/44 , C23C16/448 , C23C16/452 , C23C16/54 , C30B31/06 , C30B31/10 , C30B31/16 , C30B35/00 , H01L21/22 , C23C16/00
CPC分类号： C30B31/10 , C23C8/06 , C30B31/06 , C30B31/165 , C30B35/00
摘要： Provided is a diffusion system for forming a doping layer in a wafer. The diffusion system includes a bubbler for generating a doping gas; a premixer, which premixes the doping gas with reactive gases and preheats the gas mixture; a main chamber, in which the gas mixture reacts to the wafer; a buffer case, which externally isolates an exhaust port and a door for loading and unloading the wafer into and out or the main chamber; and a used gas exhaustion system, which exhausts a used gas after the reaction is finished in the main chamber.
摘要翻译：提供了一种用于在晶片中形成掺杂层的扩散系统。扩散系统包括用于产生掺杂气体的起泡器; 预混合器，其将掺杂气体与反应性气体预混合并预热气体混合物; 主室，其中气体混合物与晶片反应; 缓冲箱，其外部隔离排出口和用于将晶片装载和卸载的主体室; 以及在主室中反应完成后排出废气的废气排放系统。

4. 发明授权

US08354286B2 Method of manufacturing silicon optoelectronic device, silicon optoelectronic device manufactured by the method, and image input and/or output apparatus using the silicon optoelectronic device 有权
标题翻译：制造硅光电子器件的方法，通过该方法制造的硅光电子器件，以及使用硅光电子器件的图像输入和/或输出装置
公开(公告)号：US08354286B2
公开(公告)日：2013-01-15
申请号：US10758136
申请日：2004-01-16
申请人： Eun-kyung Lee , Byoung-lyong Choi , Pil-soo Ahn , Jun-young Kim , Young-gu Jin
发明人： Eun-kyung Lee , Byoung-lyong Choi , Pil-soo Ahn , Jun-young Kim , Young-gu Jin
IPC分类号： H01L21/00
CPC分类号： H01L33/34 , B82Y10/00 , B82Y20/00 , B82Y30/00 , G01Q80/00 , H01L27/14601 , H01L27/14621 , H01L27/14645 , H01L27/14683 , H01L27/156 , H01L31/02363 , H01L31/028 , H01L31/035281 , H01L31/1804 , H01L33/0054 , H01L33/24 , Y02E10/547 , Y02P70/521
摘要： A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs. The silicon optoelectronic device has superior light-emitting efficiency, can be used as at least one of a light-emitting device and a light-receiving device, and has high wavelength selectivity. In addition, the silicon optoelectronic device panel having the two-dimensional array of the silicon optoelectronic devices can be applied in the image input and/or output apparatus capable of directly displaying an image and/or inputting optical information in a screen.
摘要翻译：提供一种制造硅光电子器件的方法，通过该方法制造的硅光电子器件，以及包括硅光电子器件的图像输入和/或输出设备。该方法包括制备n型或p型硅基衬底，通过蚀刻形成沿衬底表面的微观图案，在微缺陷图案上形成具有开口的控制膜，并在具有微观图案的衬底，使得通过控制膜的开口将与衬底相反类型的预定掺杂剂注入到衬底上以被掺杂到深度，使得导致发光的光电转换效应和 /或在pn结中发生量子限制效应的接收。硅光电子器件具有优异的发光效率，可以用作发光器件和光接收器件中的至少一种，并且具有高波长选择性。此外，具有硅光电子器件的二维阵列的硅光电子器件面板可以应用于能够直接在屏幕中显示图像和/或输入光学信息的图像输入和/或输出设备。

5. 发明授权

US07452423B2 Diffusion system 失效
标题翻译：扩散系统
公开(公告)号：US07452423B2
公开(公告)日：2008-11-18
申请号：US10912059
申请日：2004-08-06
申请人： Jun-young Kim , Byoung-lyong Choi , Eun-kyung Lee
发明人： Jun-young Kim , Byoung-lyong Choi , Eun-kyung Lee
IPC分类号： C23C16/448 , C23C16/455 , C23F1/00 , C23C16/22
CPC分类号： C30B31/10 , C23C8/06 , C30B31/06 , C30B31/165 , C30B35/00
摘要： Provided is a diffusion system for forming a doping layer in a wafer. The diffusion system includes a bubbler for generating a doping gas; a premixer, which premixes the doping gas with reactive gases and preheats the gas mixture; a main chamber, in which the gas mixture reacts to the wafer; a buffer case, which externally isolates an exhaust port and a door for loading and unloading the wafer into and out or the main chamber; and a used gas exhaustion system, which exhausts a used gas after the reaction is finished in the main chamber.
摘要翻译：提供了一种用于在晶片中形成掺杂层的扩散系统。扩散系统包括用于产生掺杂气体的起泡器; 预混合器，其将掺杂气体与反应性气体预混合并预热气体混合物; 主室，其中气体混合物与晶片反应; 缓冲箱，其外部隔离排出口和用于将晶片装载和卸载的主体室; 以及在主室中反应完成后排出废气的废气排放系统。

6. 发明授权

US06930330B2 Silicon optoelectronic device and light emitting apparatus using the same 有权
标题翻译：硅光电子器件和使用其的发光装置
公开(公告)号：US06930330B2
公开(公告)日：2005-08-16
申请号：US10122421
申请日：2002-04-16
申请人： Byoung-lyong Choi , Seung-ho Nam , Eun-kyung Lee , Jae-ho You , Jun-young Kim
发明人： Byoung-lyong Choi , Seung-ho Nam , Eun-kyung Lee , Jae-ho You , Jun-young Kim
IPC分类号： H01L33/24 , H01L31/10 , H01L33/06 , H01L33/34 , H01L33/00
CPC分类号： H01L33/34 , B82Y10/00 , H01L31/0232 , H01L31/035281
摘要： A silicon optoelectronic device and a light-emitting apparatus using the silicon optoelectronic device are provided. The silicon optoelectronic device includes: a substrate based on an n-type or p-type silicon; a doped region formed on one surface of the substrate and doped to an ultra-shallow depth with a predetermined dopant to be an opposite type from that of the substrate to provide a photoelectrical conversion effect by quantum confinement in a p-n junction between the doped region and the substrate; and first and second electrodes formed on the substrate to be electrically connected to the doped region. The silicon optoelectronic device may further include a control layer formed on one surface of the substrate to act as a mask in forming the doped region and to limit the depth of the doped region to be ultra-shallow. The silicon optoelectronic device has excellent efficiency and can be used as either a light-emitting device or a light-receiving device. Since the optoelectronic device uses silicon as a base material, it can be manufactured at low cost.
摘要翻译：提供硅光电子器件和使用硅光电子器件的发光设备。硅光电子器件包括：基于n型或p型硅的衬底; 掺杂区域形成在衬底的一个表面上并掺杂到具有预定掺杂剂的超浅深度以与衬底相反的类型，以通过量子限制在掺杂区域和掺杂区域之间的pn结中提供光电转换效应基材; 以及形成在所述基板上以电连接到所述掺杂区域的第一和第二电极。硅光电子器件还可以包括形成在衬底的一个表面上的控制层，以在形成掺杂区域中用作掩模，并且将掺杂区域的深度限制为超浅。硅光电子器件具有优异的效率，可用作发光器件或光接收器件。由于光电器件使用硅作为基材，所以可以以低成本制造。

7. 发明申请

US20050082549A1 Light emitting and/or detecting device and method of manufacturing the same 有权
标题翻译：发光和/或检测装置及其制造方法
公开(公告)号：US20050082549A1
公开(公告)日：2005-04-21
申请号：US10965203
申请日：2004-10-15
申请人： Eun-kyung Lee , Byoung-lyong Choi , Jun-young Kim
发明人： Eun-kyung Lee , Byoung-lyong Choi , Jun-young Kim
IPC分类号： H01L21/00 , H01L31/0203 , H01L31/0232 , H01L31/10 , H01L31/105 , H01L31/107 , H01L33/06 , H01L33/34 , H01L33/00
CPC分类号： H01L31/107 , H01L31/105 , H01L33/34
摘要： A light emitting and detecting device and a method of manufacturing the same are provided. The method includes forming an insulating layer on a substrate doped with an n-type dopant or a p-type dopant, and removing a portion of the insulating layer to expose a predetermined area of the substrate; forming a doping layer doped with an opposite dopant to the substrate by applying a dopant on the exposed area of the substrate and heat treating the substrate to create a light conversion effect in a p-n junction between the substrate and the doping layer; and forming first and second electrodes on the substrate to electrically connect the doping layer. Thus, it is possible to control the diffusion depth of the doping layer with opposite dopant to the substrate in the substrate.
摘要翻译：提供一种发光和检测装置及其制造方法。该方法包括在掺杂有n型掺杂剂或p型掺杂剂的衬底上形成绝缘层，以及去除绝缘层的一部分以暴露衬底的预定区域; 通过在所述衬底的所述暴露区域上施加掺杂剂并对所述衬底进行热处理以在所述衬底和所述掺杂层之间的p-n结中产生光转换效应，从而在所述衬底上形成掺杂有相反掺杂剂的掺杂层; 以及在所述衬底上形成第一和第二电极以电连接所述掺杂层。因此，可以将衬底中与衬底相反的掺杂剂的掺杂层的扩散深度控制。

8. 发明授权

US06885040B2 Wavelength-selective photo detector 有权
标题翻译：波长选择性光电探测器
公开(公告)号：US06885040B2
公开(公告)日：2005-04-26
申请号：US10747439
申请日：2003-12-30
申请人： Jun-young Kim , Byoung-lyong Choi , Eun-kyung Lee
发明人： Jun-young Kim , Byoung-lyong Choi , Eun-kyung Lee
IPC分类号： H01L31/107 , G01J1/02 , H01L27/14 , H01L31/00 , H01L31/0328 , H01L35/24
CPC分类号： H01L31/107
摘要： A wavelength-selective photo detector device includes a transparent upper electrode including a capacitor, a first semiconductor layer disposed under the upper electrode, an optical absorption layer disposed under the first semiconductor layer for absorbing light to form pairs of electrons and holes, an amplification layer disposed under the optical absorption layer for generating secondary electrons, a second semiconductor layer disposed under the amplification layer, and a lower electrode disposed under the second semiconductor layer and including an inductance coupled in parallel with an external resistance. The photo detector improves the S/N ratio and filters only light having a particular wavelength band.
摘要翻译：一种波长选择性光电检测器件包括：透明上电极，包括电容器，设置在上电极下方的第一半导体层，设置在第一半导体层下方以吸收光以形成电子和空穴对的光吸收层;放大层设置在用于产生二次电子的光吸收层下方，设置在放大层下的第二半导体层，以及设置在第二半导体层下方并包括与外部电阻并联耦合的电感的下电极。光检测器提高了S / N比，并且仅滤光具有特定波长带的光。

9. 发明授权

US06787810B2 Image input/output device for displaying an image on a single panel 有权
标题翻译：用于在单个面板上显示图像的图像输入/输出设备
公开(公告)号：US06787810B2
公开(公告)日：2004-09-07
申请号：US10367786
申请日：2003-02-19
申请人： Byoung-lyong Choi , Eun-kyung Lee , Jun-young Kim
发明人： Byoung-lyong Choi , Eun-kyung Lee , Jun-young Kim
IPC分类号： H01L31072
CPC分类号： H01L27/156 , H01L33/34
摘要： Provided is an image input/output device including a silicon light device panel consisting of a plurality of silicon light devices arranged on an n- or p-type silicon based substrate in two or more-dimensional arrays for inputting and/or outputting an image. The silicon light device includes a silicon light device panel consisting of a plurality of silicon light devices arranged on an n- or p-type silicon based substrate in two or more-dimensional arrays for inputting and/or outputting an image. Each of the plurality of silicon light devices includes a doping region on one surface of the substrate, so that the silicon light device is used as a light-emitting device and light-receiving device, the doping region being doped to an ultra-shallow depth with a predetermined dopant of the opposite type to the substrate.
摘要翻译：提供了一种图像输入/输出装置，其包括由用于输入和/或输出图像的两维或多维阵列中布置在n型或p型硅基衬底上的多个硅光器件组成的硅光器件面板。硅光器件包括由用于输入和/或输出图像的两维或多维阵列中布置在n型或p型硅基衬底上的多个硅光器件组成的硅光器件面板。多个硅光器件中的每一个在衬底的一个表面上包括掺杂区域，使得硅光器件用作发光器件和光接收器件，掺杂区被掺杂到超浅深度具有与衬底相反类型的预定掺杂剂。

10. 发明授权

US06740904B2 Silicon light-emitting device and display apparatus employing the same 有权
标题翻译：硅发光器件及其应用的显示装置
公开(公告)号：US06740904B2
公开(公告)日：2004-05-25
申请号：US10294549
申请日：2002-11-15
申请人： Jun-young Kim , Byoung-lyong Choi , Eun-kyung Lee
发明人： Jun-young Kim , Byoung-lyong Choi , Eun-kyung Lee
IPC分类号： H01L2715
CPC分类号： H01L33/34 , H01L27/15
摘要： A silicon light-emitting device and a display device employing the silicon light-emitting device are provided. In the silicon light-emitting device, a doped region is ultra-shallowly doped with the opposite type dopant to the type of the substrate on one side of the substrate, so that the p-n junction between the doped region itself and the substrate creates luminance by annihilation combination of electron-hole pairs due to the quantum confinement effect. At least one semiconductor material portion at least partially forms a stack along with the doped region on the other side of the substrate. First, second, and third electrodes are formed for electric connection. The silicon light-emitting device includes a transistor of at least one step and accordingly performs current amplification and/or switching. Thus, luminance can be driven just with a small amount of current. In addition, when an array of silicon light-emitting devices is adopted in a display device, the turn-on and turn-off durations for used current can be controlled on a pixel-by-pixel basis. Therefore, the luminance duration can be easily controlled.
摘要翻译：提供硅发光器件和采用硅发光器件的显示器件。在硅发光器件中，掺杂区域在衬底的一侧上与衬底类型相反的掺杂剂超浅掺杂，使得掺杂区域本身和衬底之间的pn结通过由于量子限制效应，电子 - 空穴对的湮灭组合。至少一个半导体材料部分至少部分地与衬底的另一侧上的掺杂区域一起形成堆叠。形成第一，第二和第三电极用于电连接。硅发光器件包括至少一个级的晶体管，因此执行电流放大和/或切换。因此，可以仅用少量的电流来驱动亮度。此外，当在显示装置中采用硅发光器件阵列时，可以逐个像素地控制使用电流的导通和关断持续时间。因此，可以容易地控制亮度持续时间。

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