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    • 1. 发明授权
    • Silicon optoelectronic device and light emitting apparatus using the same
    • 硅光电子器件和使用其的发光装置
    • US06930330B2
    • 2005-08-16
    • US10122421
    • 2002-04-16
    • Byoung-lyong ChoiSeung-ho NamEun-kyung LeeJae-ho YouJun-young Kim
    • Byoung-lyong ChoiSeung-ho NamEun-kyung LeeJae-ho YouJun-young Kim
    • H01L33/24H01L31/10H01L33/06H01L33/34H01L33/00
    • H01L33/34B82Y10/00H01L31/0232H01L31/035281
    • A silicon optoelectronic device and a light-emitting apparatus using the silicon optoelectronic device are provided. The silicon optoelectronic device includes: a substrate based on an n-type or p-type silicon; a doped region formed on one surface of the substrate and doped to an ultra-shallow depth with a predetermined dopant to be an opposite type from that of the substrate to provide a photoelectrical conversion effect by quantum confinement in a p-n junction between the doped region and the substrate; and first and second electrodes formed on the substrate to be electrically connected to the doped region. The silicon optoelectronic device may further include a control layer formed on one surface of the substrate to act as a mask in forming the doped region and to limit the depth of the doped region to be ultra-shallow. The silicon optoelectronic device has excellent efficiency and can be used as either a light-emitting device or a light-receiving device. Since the optoelectronic device uses silicon as a base material, it can be manufactured at low cost.
    • 提供硅光电子器件和使用硅光电子器件的发光设备。 硅光电子器件包括:基于n型或p型硅的衬底; 掺杂区域形成在衬底的一个表面上并掺杂到具有预定掺杂剂的超浅深度以与衬底相反的类型,以通过量子限制在掺杂区域和掺杂区域之间的pn结中提供光电转换效应 基材; 以及形成在所述基板上以电连接到所述掺杂区域的第一和第二电极。 硅光电子器件还可以包括形成在衬底的一个表面上的控制层,以在形成掺杂区域中用作掩模,并且将掺杂区域的深度限制为超浅。 硅光电子器件具有优异的效率,可用作发光器件或光接收器件。 由于光电器件使用硅作为基材,所以可以以低成本制造。
    • 2. 发明授权
    • Multiple wavelength surface-emitting laser device and method for its manufacture
    • 多波长表面发射激光器件及其制造方法
    • US06795457B2
    • 2004-09-21
    • US09867709
    • 2001-05-31
    • Young-jin SongSeung-ho NamByoung-lyong ChoiJae-ho You
    • Young-jin SongSeung-ho NamByoung-lyong ChoiJae-ho You
    • H01S310
    • H01S5/423H01S5/0425H01S5/18311H01S5/18361H01S5/4087
    • A multiple wavelength surface-emitting laser device equipped with a substrate and a plurality of surface-emitting lasers formed on the substrate by a continuous manufacturing process is provided. Each surface-emitting laser includes a bottom reflection layer on the substrate, that is doped with impurities of one type and composed of alternating semiconductor material layers having different refractive indexes; an active layer that is formed on the bottom reflection layer; an intermediate layer that is doped with impurities of the other type on the active layer; a top electrode that is formed on the intermediate layer to have a window through which light is emitted; and a dielectric reflection layer where dielectric materials with different refractive indexes are alternately layered on the intermediate layer and/or the top electrode to a thickness suitable for a desired resonance wavelength, and the resonance wavelength is controlled by adjusting the thickness of the dielectric reflection layer.
    • 提供了通过连续制造工艺配置有基板和形成在基板上的多个表面发射激光器的多波长表面发射激光器件。 每个表面发射激光器包括在衬底上的底部反射层,其掺杂了一种类型的杂质,并且由具有不同折射率的交替的半导体材料层组成; 形成在底部反射层上的有源层; 在活性层上掺杂另一种杂质的中间层; 形成在所述中间层上以具有通过其发出光的窗口的顶部电极; 以及介电反射层,其中具有不同折射率的电介质材料在中间层和/或顶部电极上交替层叠到适于所需共振波长的厚度,并且通过调节介电反射层的厚度来控制谐振波长 。
    • 3. 发明授权
    • Light-emitting device and light-emitting apparatus using the same
    • 发光装置及使用其的发光装置
    • US06697403B2
    • 2004-02-24
    • US10122416
    • 2002-04-16
    • Eun-kyung LeeByoung-lyong ChoiJae-ho You
    • Eun-kyung LeeByoung-lyong ChoiJae-ho You
    • H01S500
    • H01L33/24H01L33/105H01L33/34H01L33/42H01L33/465
    • A light-emitting device and a light-emitting apparatus using the same. The light-emitting device includes an n-type or p-type substrate, a doped region formed on a first surface of the substrate with a predetermined dopant to be an opposite type from that of the substrate, to an ultra-shallow depth such that light is emitted from a p-n junction between the doped region and the substrate by a quantum confinement effect, a resonator which improves the selectivity of wavelength of the light emitted from the p-n junction, and first and second electrodes formed on the first surface and a second surface of the substrate, respectively, for injection of holes and electrons. The light-emitting device includes the ultra-shallow doped region so that it can emit light with a quantum confinement effect in the p-n junction. A resonator structure to resonate only a particular wavelength range of light is added to the light-emitting device so that the selectivity of light wavelength is markedly improved with excellent efficiency. The intensity of light emission is amplified by the resonator structure, and the directional property of the emitted light can be improved further than that of conventional light-emitting devices.
    • 发光装置和使用其的发光装置。 发光器件包括n型或p型衬底,在衬底的第一表面上形成具有与衬底相反的预定掺杂剂的掺杂区域到超浅深度,使得 光通过量子限制效应从掺杂区域和衬底之间的pn结发射,改善从pn结发射的光的波长的选择性的谐振器,以及形成在第一表面上的第一和第二电极 分别用于注入空穴和电子的衬底的表面。 发光器件包括超浅掺杂区域,使得其可以在p-n结中发射具有量子限制效应的光。 仅在特定的光波长范围内谐振的谐振器结构被添加到发光器件中,从而以优异的效率显着地提高了光波长的选择性。 通过谐振器结构放大发光强度,与现有的发光元件相比,能够进一步提高发光的取向性。