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1. 发明申请

US20060119725A1 Solid state imaging device, method for driving the same and camera using the same 审中-公开
标题翻译：固态成像装置，其驱动方法及使用其的相机
公开(公告)号：US20060119725A1
公开(公告)日：2006-06-08
申请号：US11332885
申请日：2006-01-17
申请人： Takao Kuroda , Sei Suzuki , Kidera Akito
发明人： Takao Kuroda , Sei Suzuki , Kidera Akito
IPC分类号： H04N5/335
CPC分类号： H04N5/3728 , H04N5/357 , H04N5/3597
摘要： In making solid state imaging devices smaller and increasing their number of pixels, it is desirable to increase the charge amount that can be handled per unit area of the transfer portions. It is possible to achieve this by making the insulating film thinner, but this leads to electric fields in the semiconductor substrate that are too strong, and causes problems such as the generation of noise and the deterioration of the transfer efficiency. This invention relaxes potential steps in the transfer region by applying, when a signal charge 1 is being read out (t=t2), a high voltage to the electrode 43 for reading out the signal charge, a low voltage to at least one of the electrodes 41, 45-47 for preventing unnecessary mixing of signal charges, and an intermediate voltage between the high voltage and the low voltage to the electrodes 42 and 44, which are adjacent to the electrode 43 to which the high voltage is applied.
摘要翻译：在使固态成像装置更小并且其像素数量增加的情况下，期望增加可以在转印部分的每单位面积处理的电荷量。可以通过使绝缘膜更薄而实现这一点，但是这导致半导体衬底中的电场太强，并且引起噪声的产生和传输效率的劣化等问题。本发明通过在读出信号电荷1（t = t 2 2）时施加向读出信号电荷的电极43施加的高电压，放松了转印区域中的潜在步骤，低电压至至少一个电极41,45-47，用于防止信号电荷的不必要的混合，以及与电极43相邻的电极42和44的高电压和低电压之间的中间电压，施加高电压。

2. 发明授权

US07038723B1 Solid state imaging device, method for driving the same and camera using the same 有权
标题翻译：固态成像装置，其驱动方法及使用其的相机
公开(公告)号：US07038723B1
公开(公告)日：2006-05-02
申请号：US09558888
申请日：2000-04-26
申请人： Takao Kuroda , Sei Suzuki , Akito Kidera
发明人： Takao Kuroda , Sei Suzuki , Akito Kidera
IPC分类号： H04N3/14
CPC分类号： H04N5/3728 , H04N5/357 , H04N5/3597
摘要： In making solid state imaging devices smaller and increasing their number of pixels, it is desirable to increase the charge amount that can be handled per unit area of the transfer portions. It is possible to achieve this by making the insulating film thinner, but this leads to electric fields in the semiconductor substrate that are too strong, and causes problems such as the generation of noise and the deterioration of the transfer efficiency. This invention relaxes potential steps in the transfer region by applying, when a signal charge 1 is being read out (t=t2), a high voltage to the electrode 43 for reading out the signal charge, a low voltage to at least one of the electrodes 41, 45–47 for preventing unnecessary mixing of signal charges, and an intermediate voltage between the high voltage and the low voltage to the electrodes 42 and 44, which are adjacent to the electrode 43 to which the high voltage is applied.
摘要翻译：在使固态成像装置更小并且其像素数量增加的情况下，期望增加可以在转印部分的每单位面积处理的电荷量。可以通过使绝缘膜更薄而实现这一点，但是这导致半导体衬底中的电场太强，并且引起噪声的产生和传输效率的劣化等问题。本发明通过在读出信号电荷1（t = t 2 2）时施加向读出信号电荷的电极43施加的高电压，放松了转印区域中的潜在步骤，低电压至电极41,45-47中的至少一个，用于防止信号电荷的不必要的混合，以及与电极43相邻的电极42和44的高电压和低电压之间的中间电压，施加高电压。

3. 发明申请

US20050088557A1 Solid state imaging device, method for driving the same and camera using the same 审中-公开
标题翻译：固态成像装置，其驱动方法及使用其的相机
公开(公告)号：US20050088557A1
公开(公告)日：2005-04-28
申请号：US10990724
申请日：2004-11-17
申请人： Takao Kuroda , Sei Suzuki , Akito Kidera
发明人： Takao Kuroda , Sei Suzuki , Akito Kidera
IPC分类号： H01L27/148 , H04N3/14 , H04N5/357 , H04N5/376
CPC分类号： H04N5/3728 , H04N5/357 , H04N5/3597
摘要： In making solid state imaging devices smaller and increasing their number of pixels, it is desirable to increase the charge amount that can be handled per unit area of the transfer portions. It is possible to achieve this by making the insulating film thinner, but this leads to electric fields in the semiconductor substrate that are too strong, and causes problems such as the generation of noise and the deterioration of the transfer efficiency. This invention relaxes potential steps in the transfer region by applying, when a signal charge 1 is being read out (t=t2), a high voltage to the electrode 43 for reading out the signal charge, a low voltage to at least one of the electrodes 41, 45-47 for preventing unnecessary mixing of signal charges, and an intermediate voltage between the high voltage and the low voltage to the electrodes 42 and 44, which are adjacent to the electrode 43 to which the high voltage is applied.
摘要翻译：在使固态成像装置更小并且其像素数量增加的情况下，期望增加可以在转印部分的每单位面积处理的电荷量。可以通过使绝缘膜更薄而实现这一点，但是这导致半导体衬底中的电场太强，并且引起噪声的产生和传输效率的劣化等问题。本发明通过在读出信号电荷1（t = t 2 2）时施加向读出信号电荷的电极43施加的高电压，放松了转印区域中的潜在步骤，低电压至至少一个电极41,45-47，用于防止信号电荷的不必要的混合，以及与电极43相邻的电极42和44的高电压和低电压之间的中间电压，施加高电压。

4. 发明申请

US20080012048A1 Semiconductor Device And Method For Manufacturing Same 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US20080012048A1
公开(公告)日：2008-01-17
申请号：US11570658
申请日：2005-12-14
申请人： Takao Kuroda
发明人： Takao Kuroda
IPC分类号： H01L27/148 , H01L21/339 , H01L29/76
CPC分类号： H01L27/14689 , H01L27/14806 , H01L29/76833
摘要： In a semiconductor device 10 including a structure where transfer electrodes 2a to 2c are disposed on a semiconductor substrate 1 via an insulation layer 3, a first semiconductor region 4 of a first conductivity type, a second semiconductor region 5 of a conductivity type opposite to the first conductivity type, and a third semiconductor region 6 of the first conductivity type in a position that overlaps a region of the semiconductor substrate 1 directly underneath the transfer electrodes 2a to 2c. The second semiconductor region 5 is formed on the first semiconductor region 4. The third semiconductor region 6 is formed on the second semiconductor region 5 so that a position of a maximal point 8 of electric potential of the second semiconductor region 5 when being depleted is deeper than a position of the maximal point 8 in a case where the third semiconductor region 6 does not exist.
摘要翻译：在包括通过绝缘层3设置在半导体衬底1上的转移电极2a至2c的结构的半导体器件10中，具有第一导电类型的第一半导体区域4，导电类型的第二半导体区域5 第一导电类型的第三半导体区域6以及直接位于转移电极2a至2c下方的与半导体衬底1的区域重叠的位置。第二半导体区域5形成在第一半导体区域4上。第三半导体区域6形成在第二半导体区域5上，使得当第三半导体区域6被耗尽时第二半导体区域5的电位的最大点8的位置比第三半导体区域5的第三半导体区域5的最大点8的位置更深半导体区域6不存在。

5. 发明授权

US5837565A Semiconductor device 失效
公开(公告)号：US5837565A
公开(公告)日：1998-11-17
申请号：US450621
申请日：1995-05-25
申请人： Takao Kuroda , Yasuhiro Shiraki
发明人： Takao Kuroda , Yasuhiro Shiraki
IPC分类号： H01L29/812 , H01L21/20 , H01L21/338 , H01L29/201 , H01L29/205 , H01L29/778 , H01L29/80
CPC分类号： H01L29/205 , H01L29/7783 , Y10S438/938
摘要： Disclosed is a semiconductor device comprising an undoped GaAs layer, an intermediate undoped layer and an undoped Ga.sub.1-x Al.sub.x As layer which are successively provided on a substrate made of a semiinsulating GaAs crystal; the intermediate undoped layer being an undoped In.sub.y Ga.sub.1-y As layer, an undoped GaAs.sub.1-z Sb.sub.z layer, a superlattice layer which includes an undoped In.sub.y Ga.sub.1-y As layer and an undoped GaAs.sub.1-z Sb.sub.z layer, a superlattice layer which includes an undoped In.sub.y Ga.sub.1-y As layer and an undoped GaAs layer, or a superlattice layer which includes an undoped GaAs.sub.1-z Sb layer and an undoped GaAs layer. When applied to a high electron mobility transistor, this semiconductor device affords a high current and a high speed and has the merit of a small dispersion in the threshold voltage thereof.

6. 发明授权

US5451802A Charge transfer device having a high-resistance electrode and a low-resistance electrode 失效
标题翻译：具有高电阻电极和低电阻电极的电荷转移装置
公开(公告)号：US5451802A
公开(公告)日：1995-09-19
申请号：US145347
申请日：1993-10-29
申请人： Hiroyoshi Komobuchi , Takao Kuroda
发明人： Hiroyoshi Komobuchi , Takao Kuroda
IPC分类号： H01L29/762 , H01L21/339 , H01L29/423 , H04N5/335 , H04N5/341 , H04N5/369 , H04N5/372 , H01L29/78
CPC分类号： H01L29/42396
摘要： A charge transfer device is provided, which includes: a semiconductor substrate having transfer regions for transferring a signal charge; an insulating film formed on the semiconductor substrate; an electrode layer formed above the transfer regions with the insulating film sandwiched therebetween, the electrode layer having high-resistant portions and low-resistant portions alternately provided; and voltage application means for applying a voltage for changing a surface potential of the transfer regions to the low-resistant portions of the electrode layer.
摘要翻译：提供电荷转移装置，其包括：具有用于传送信号电荷的转移区域的半导体衬底; 形成在半导体衬底上的绝缘膜; 形成在所述转印区域之上的绝缘膜夹在其间的电极层，所述电极层具有高阻抗部分和低阻抗部分交替设置; 以及电压施加装置，用于将转印区域的表面电位改变为电极层的低电阻部分的电压。

7. 发明授权

US5315137A Charge transfer device, process for its manufacture, and method of driving the device 失效
标题翻译：电荷转移装置，其制造方法和驱动装置的方法
公开(公告)号：US5315137A
公开(公告)日：1994-05-24
申请号：US790782
申请日：1991-11-12
申请人： Masaji Asaumi , Takao Kuroda
发明人： Masaji Asaumi , Takao Kuroda
IPC分类号： H01L21/339 , H01L29/423 , H01L29/768 , H01L29/796
CPC分类号： H01L29/66954 , H01L29/42396 , H01L29/76833 , H01L29/76858
摘要： The present invention relates to a charge transfer device having high transfer efficiency without leaving over signal charges, a charge transfer device substantially shortened in the gate length so as to enhance the transfer speed, and a method of manufacturing and a method of driving such device. In the charge transfer device of the invention, the n.sup.- diffusion layer is formed on the semiconductor substrate. In the surface region of the n.sup.- diffusion layer, a plurality of n diffusion layers are formed at equal intervals. The interval of the adjacent n diffusion layers is about 5 to 10 .mu.m. On the n.sup.- diffusion layer, an insulation film is formed. On the insulation film, transfer electrodes having two different shapes are formed. The transfer electrodes of these two types are alternately arranged. These transfer electrodes differ in length. The length of the longer transfer electrodes is about twice the length of the shorter transfer electrodes. Furthermore, the right end of the n diffusion layer nearly coincides with the right end of the longer transfer electrodes formed on the gate oxide film in the spatial position.
摘要翻译：本发明涉及一种电荷转移装置，其具有高的转印效率而不会离开信号电荷，电荷转移装置基本上缩短了栅极长度，从而提高了传送速度，以及一种制造方法和驱动该装置的方法。在本发明的电荷转移装置中，在半导体衬底上形成n-扩散层。在n扩散层的表面区域中，以等间隔形成多个n个扩散层。相邻n个扩散层的间隔约为5〜10μm。在n-扩散层上形成绝缘膜。在绝缘膜上形成具有两种不同形状的转印电极。这两种类型的转移电极交替排列。这些转移电极的长度不同。较长的传输电极的长度约为短传输电极长度的两倍。此外，n扩散层的右端几乎与在空间位置上形成在栅极氧化膜上的较长传输电极的右端重合。

8. 发明授权

US4783702A Method of throwing away unnecessary signal charges in solid state image sensing device 失效
标题翻译：在固态摄像装置中丢弃不必要的信号电荷的方法
公开(公告)号：US4783702A
公开(公告)日：1988-11-08
申请号：US921493
申请日：1986-10-22
申请人： Yoshiaki Sone , Takao Kuroda
发明人： Yoshiaki Sone , Takao Kuroda
IPC分类号： H04N5/335 , H04N5/341 , H04N5/353 , H04N5/357 , H04N5/3725 , H04N5/3728 , H04N3/14
CPC分类号： H04N3/1568
摘要： A solid state image sensing device which transfers unnecessary signal charges accumulated at photoelectric conversion devices by a first charge pulse in a vertical blanking period to vertical transferring means and throws out the unnecessary signal charges using throw-away means. The necessary signal charges accumulated in the photoelectric conversion devices in such period after the first charge pulse are transferred by a second charge pulse to the vertical transferring means, a horizontal transferring means and a signal detecting means, thereby to issue a video signal.
摘要翻译：一种固态图像感测装置，其将在光电转换装置中积累的不必要的信号电荷通过垂直消隐期间的第一充电脉冲传送到垂直传送装置，并且使用丢弃装置来抛出不必要的信号电荷。在将第一充电脉冲通过第二充电脉冲传送到垂直传送装置，水平传送装置和信号检测装置之后的这段时间内累积在光电转换装置中的必要信号电荷，从而发出视频信号。

9. 发明授权

US4580522A Rotary substrate holder of molecular beam epitaxy apparatus 失效
标题翻译：分子束外延装置的旋转衬底支架
公开(公告)号：US4580522A
公开(公告)日：1986-04-08
申请号：US706184
申请日：1985-02-27
申请人： Kazumasa Fujioka , Sumio Okuno , Muneo Mizumoto , Hideaki Kamohara , Shinjiro Ueda , Takao Kuroda , Sumio Yamaguchi , Naoyuki Tamura
发明人： Kazumasa Fujioka , Sumio Okuno , Muneo Mizumoto , Hideaki Kamohara , Shinjiro Ueda , Takao Kuroda , Sumio Yamaguchi , Naoyuki Tamura
IPC分类号： H01L21/203 , C30B23/06 , C30B23/08 , B05C13/00
CPC分类号： C30B23/063
摘要： A rotary substrate holder of a molecular beam epitaxy apparatus including leads-cum-posts serving both as leads for passing a current to a heater for heating a substrate and as posts for supporting the heater. By this arrangement, heat transferred from the heater to a bearing disposed in the vicinity of the heater is minimized in amount, thereby prolonging the service life of the holder and minimizing a heat loss thereof.
摘要翻译：分子束外延装置的旋转衬底保持器，其包括用作将电流传递到用于加热衬底的加热器的引线的辅助柱和用于支撑加热器的柱。通过这种布置，从加热器传递到设置在加热器附近的轴承的热量最小化，从而延长保持器的使用寿命并最小化其热损失。

10. 发明授权

US08138819B2 Driving transistor control circuit 有权
公开(公告)号：US08138819B2
公开(公告)日：2012-03-20
申请号：US12458484
申请日：2009-07-14
申请人： Takao Kuroda
发明人： Takao Kuroda
IPC分类号： H03K17/04
CPC分类号： H03K17/166
摘要： A control circuit controls a driving transistor connected in series with an electrical load between a power supply voltage and a ground. The control circuit includes a pull-up resistor connected at one end to a power supply voltage side of the driving transistor, a current detection resistor for detecting an electric current flowing from the driving transistor to the ground, a current mirror circuit including a starting transistor connected between the pull-up transistor and the current detection resistor. The current mirror circuit supplies a mirror current of the electric current. The control circuit further includes a current source circuit for supplying a driving current to a control terminal of the driving transistor in accordance with the mirror current to turn ON the driving transistor in response to an external control signal.

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