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    • 1. 发明授权
    • Dual wavelength exposure method and system for semiconductor device manufacturing
    • 双波长曝光方法和半导体器件制造系统
    • US08338262B2
    • 2012-12-25
    • US12478426
    • 2009-06-04
    • Heng-Jen LeeJui-Chun PengI-Hsiung Huang
    • Heng-Jen LeeJui-Chun PengI-Hsiung Huang
    • H01L21/336
    • G03F7/203G03F7/7045G03F7/70458G03F7/70466
    • A dual wavelength exposure system provides for patterning a resist layer formed on a wafer for forming semiconductor devices, using two exposure operations, one including a first radiation having a first wavelength and the other including a second radiation including a second wavelength. Different or the same lithography tool may be used to generate the first and second radiation. For each die formed on the semiconductor device, a critical portion of the pattern is exposed using a first exposure operation that uses a first radiation with a first wavelength and a non-critical portion of the pattern is exposed using a second exposure operation utilizing the second radiation at a second wavelength. The resist material is chosen to be sensitive to both the first radiation having a first wavelength and the second radiation having the second wavelength.
    • 双波长曝光系统提供了使用两个曝光操作来形成在晶片上形成的晶片上的抗蚀剂层,一个包括具有第一波长的第一辐射,另一个包括包括第二波长的第二辐射。 可以使用不同或相同的光刻工具来产生第一和第二辐射。 对于形成在半导体器件上的每个裸片,使用第一曝光操作曝光图案的关键部分,该第一曝光操作使用第一波长的第一辐射,并且使用第二曝光操作曝光图案的非关键部分 第二波长的辐射。 抗蚀剂材料被选择为对具有第一波长的第一辐射和具有第二波长的第二辐射都敏感。
    • 2. 发明申请
    • METHOD AND APPARATUS FOR REDUCING DOWN TIME OF A LITHOGRAPHY SYSTEM
    • 降低刻蚀系统下降时间的方法和装置
    • US20100321660A1
    • 2010-12-23
    • US12486565
    • 2009-06-17
    • Jui-Chun PengHeng-Jen LeeTung-Li WuI-Hsiung Huang
    • Jui-Chun PengHeng-Jen LeeTung-Li WuI-Hsiung Huang
    • G03B27/54
    • G03B27/54G03F7/70033G03F7/70916H05G2/005H05G2/008
    • An apparatus includes a radiation source that emits a radiation beam that causes substantially all of a quantity of material to evaporate; and structure having first and second surface portions, a first operational mode wherein a greater quantity of a byproduct of the evaporation impinges on the first surface portion, and a second operational mode wherein a greater quantity of the byproduct impinges on the second surface portion. A different aspect involves emitting a radiation beam toward a quantity of material, the radiation beam causing substantially all of the quantity of material to evaporate; operating a structure having first and second surface portions in a first operational mode wherein a greater quantity of a byproduct of the evaporation impinges on the first surface portion; and thereafter operating the structure in a second operational mode wherein a greater quantity of the byproduct impinges on the second surface portion.
    • 一种装置包括辐射源,辐射源发射基本上所有的一定量物质蒸发的辐射束; 以及具有第一和第二表面部分的结构,第一操作模式,其中更大量的蒸发副产物撞击在第一表面部分上,以及第二操作模式,其中较大量的副产物撞击在第二表面部分上。 不同的方面涉及朝向一定数量的材料发射辐射束,所述辐射束导致基本上所有量的材料蒸发; 在第一操作模式中操作具有第一和第二表面部分的结构,其中更大量的蒸发副产物撞击在第一表面部分上; 然后以第二操作模式操作该结构,其中较大量的副产物撞击在第二表面部分上。
    • 4. 发明授权
    • System and method for cleaning a wafer chuck
    • 用于清洁晶片卡盘的系统和方法
    • US08955530B2
    • 2015-02-17
    • US13008707
    • 2011-01-18
    • Jui-Chun PengHeng-Jen Lee
    • Jui-Chun PengHeng-Jen Lee
    • B08B7/00H01L21/67
    • H01L21/67028
    • A wafer chuck is cleaned using a cleaning cap to remove processing residue and particulate matter. The cleaning cap is configured to overlie and align with the wafer chuck and includes a base and a first roller connected to the base and having wound therearound a cleaning cloth. The cleaning cap further includes a second roller connected to the base and having attached thereto a free end of the cleaning cloth. During use, the cleaning cloth winds upon the second roller from the first roller when the second roller rotates about its axis. The cleaning cap can be positioned relative the wafer chuck by way of a manipulator to ensure the cleaning cloth contacts the wafer chuck with sufficient force. The cleaning cloth rubs the wafer chuck with both translational motion and rotational motion.
    • 使用清洁盖清洁晶片卡盘以除去加工残留物和颗粒物质。 清洁盖被配置成覆盖并与晶片卡盘对准,并且包括底座和连接到基座并在其周围缠绕清洁布的第一滚子。 清洁帽还包括连接到基座并且附接有清洁布的自由端的第二辊。 在使用期间,当第二辊围绕其轴旋转时,清洁布从第一辊滚动到第二辊上。 清洁盖可以通过操纵器相对于晶片卡盘定位,以确保清洁布以足够的力与晶片卡盘接触。 清洁布用平移运动和旋转运动擦拭晶片卡盘。
    • 5. 发明授权
    • Method and apparatus for reducing down time of a lithography system
    • 降低光刻系统时间的方法和装置
    • US08237132B2
    • 2012-08-07
    • US12486565
    • 2009-06-17
    • Jui-Chun PengHeng-Jen LeeTung-Li WuI-Hsiung Huang
    • Jui-Chun PengHeng-Jen LeeTung-Li WuI-Hsiung Huang
    • G21K5/00
    • G03B27/54G03F7/70033G03F7/70916H05G2/005H05G2/008
    • An apparatus includes a radiation source that emits a radiation beam that causes substantially all of a quantity of material to evaporate; and structure having first and second surface portions, a first operational mode wherein a greater quantity of a byproduct of the evaporation impinges on the first surface portion, and a second operational mode wherein a greater quantity of the byproduct impinges on the second surface portion. A different aspect involves emitting a radiation beam toward a quantity of material, the radiation beam causing substantially all of the quantity of material to evaporate; operating a structure having first and second surface portions in a first operational mode wherein a greater quantity of a byproduct of the evaporation impinges on the first surface portion; and thereafter operating the structure in a second operational mode wherein a greater quantity of the byproduct impinges on the second surface portion.
    • 一种装置包括辐射源,辐射源发射基本上所有的一定量物质蒸发的辐射束; 以及具有第一和第二表面部分的结构,第一操作模式,其中更大量的蒸发副产物撞击在第一表面部分上,以及第二操作模式,其中较大量的副产物撞击在第二表面部分上。 不同的方面涉及朝向一定数量的材料发射辐射束,所述辐射束导致基本上所有量的材料蒸发; 在第一操作模式中操作具有第一和第二表面部分的结构,其中更大量的蒸发副产物撞击在第一表面部分上; 然后以第二操作模式操作该结构,其中较大量的副产物撞击在第二表面部分上。
    • 7. 发明申请
    • System and Method for Cleaning a Wafer Chuck
    • 清洁晶片卡盘的系统和方法
    • US20120180813A1
    • 2012-07-19
    • US13008707
    • 2011-01-18
    • Jui-Chun PengHeng-Jen Lee
    • Jui-Chun PengHeng-Jen Lee
    • B08B7/00A47L9/04A47L13/10
    • H01L21/67028
    • A wafer chuck is cleaned using a cleaning cap to remove processing residue and particulate matter. The cleaning cap is configured to overlie and align with the wafer chuck and includes a base and a first roller connected to the base and having wound therearound a cleaning cloth. The cleaning cap further includes a second roller connected to the base and having attached thereto a free end of the cleaning cloth. During use, the cleaning cloth winds upon the second roller from the first roller when the second roller rotates about its axis. The cleaning cap can be positioned relative the wafer chuck by way of a manipulator to ensure the cleaning cloth contacts the wafer chuck with sufficient force. The cleaning cloth rubs the wafer chuck with both translational motion and rotational motion.
    • 使用清洁盖清洁晶片卡盘以除去加工残留物和颗粒物质。 清洁盖被配置成覆盖并与晶片卡盘对准,并且包括底座和连接到基座并在其周围缠绕清洁布的第一滚子。 清洁帽还包括连接到基座并且附接有清洁布的自由端的第二辊。 在使用期间,当第二辊围绕其轴旋转时,清洁布从第一辊滚动到第二辊上。 清洁盖可以通过操纵器相对于晶片卡盘定位,以确保清洁布以足够的力与晶片卡盘接触。 清洁布用平移运动和旋转运动擦拭晶片卡盘。
    • 8. 发明申请
    • Track Spin Wafer Chuck
    • 轨道旋转晶片卡盘
    • US20130156947A1
    • 2013-06-20
    • US13328254
    • 2011-12-16
    • Wei-Hsiang TsengJui-Chun PengKai-Fa HoHo-Ping ChenChia-Yun Lee
    • Wei-Hsiang TsengJui-Chun PengKai-Fa HoHo-Ping ChenChia-Yun Lee
    • H01L21/683B05D3/12
    • H01L21/6838
    • The present disclosure relates to a wafer chuck configured to provide a uniform photoresist layer on a workpiece. In some embodiments, the wafer chuck comprises a plurality of vacuum holes. The plurality of vacuum holes (i.e., more than one) are in fluid communication with a cavity that continuously extends along the top surface between the vacuum holes. A vacuum source, connected to each vacuum hole, is configured to remove gas molecules from the cavity located below the workpiece leaving behind a low pressure vacuum. The use of a plurality of vacuum holes increase the uniformity of the vacuum, thereby preventing the formation of high vacuum areas in close proximity to any specific vacuum hole. The reduction of high vacuum areas reduces wafer bending associated with the high vacuum areas.
    • 本公开涉及一种配置成在工件上提供均匀光致抗蚀剂层的晶片卡盘。 在一些实施例中,晶片卡盘包括多个真空孔。 多个真空孔(即多于一个)与沿着真空孔之间的顶表面连续延伸的空腔流体连通。 连接到每个真空孔的真空源构造成从位于工件下方的空腔去除气体分子,留下低压真空。 使用多个真空孔增加真空的均匀性,从而防止在任何特定的真空孔附近形成高真空区域。 高真空区域的减少减少了与高真空区域相关联的晶片弯曲。