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1. 发明授权

US07297892B2 Systems and methods for laser-assisted plasma processing 有权
标题翻译：激光辅助等离子体处理的系统和方法
公开(公告)号：US07297892B2
公开(公告)日：2007-11-20
申请号：US10913739
申请日：2004-08-06
申请人： Jude Kelley , Jeffrey W. Carr , Peter S. Fiske
发明人： Jude Kelley , Jeffrey W. Carr , Peter S. Fiske
IPC分类号： B23K9/00 , B23K9/02
CPC分类号： C04B41/009 , B08B7/0035 , C03C15/00 , C03C23/006 , C03C23/0075 , C04B41/5346 , C04B41/91 , G02B6/136 , H05H1/30 , C04B41/0036 , C04B35/14 , C04B35/565
摘要： A controllable heat source, such as a laser or flame torch, can be used to pre-heat a portion of the surface of a workpiece, such as a glass optic or semiconductor wafer. Reactive atom plasma (RAP) processing can be used to modify the pre-heated surface portion, as the pre-heated material will more readily chemically combine with the atomic radicals of the precursor in the plasma. A RAP torch, such as an ICP plasma torch, MIP plasma torch, or flame torch, can be used to shape, polish, etch, planarize, deposit, chemically modify and/or redistribute material on the surface of the workpiece. The material modified by the torch can substantially correspond to the pattern or portion of the surface that was pre-heated by the heat source. This description is not intended to be a complete description of, or limit the scope of, the invention. Other features, aspects, and objects of the invention can be obtained from a review of the specification, the figures, and the claims.
摘要翻译：可以使用诸如激光或火焰焰炬的可控热源来预热工件表面的一部分，例如玻璃光学或半导体晶片。可以使用反应性原子等离子体（RAP）处理来改变预加热的表面部分，因为预热的材料将更容易地与等离子体中的前体的原子基团化学结合。可以使用RAP手电筒，例如ICP等离子体焰炬，MIP等离子体焰炬或火焰焰炬来对工件表面上的材料进行成形，抛光，蚀刻，平面化，沉积，化学修饰和/或重新分布。通过焊炬改性的材料可以基本上对应于由热源预热的表面的图案或部分。本说明书不是对本发明的完整描述或限制本发明的范围。本发明的其它特征，方面和目的可以通过对说明书，附图和权利要求的评述来获得。

2. 发明授权

US07304263B2 Systems and methods utilizing an aperture with a reactive atom plasma torch 有权
标题翻译：使用具有反应性原子等离子体焰炬的孔的系统和方法
公开(公告)号：US07304263B2
公开(公告)日：2007-12-04
申请号：US10911821
申请日：2004-08-05
申请人： Andrew Chang , Jeffrey W. Carr , Jude Kelley , Peter S. Fiske
发明人： Andrew Chang , Jeffrey W. Carr , Jude Kelley , Peter S. Fiske
IPC分类号： B23K9/00
CPC分类号： H05H1/30
摘要： The footprint of a reactive atom plasma processing tool can be modified using an aperture device. A flow of reactive gas can be injected into the center of an annular plasma. An aperture can be positioned relative to the plasma such that the effective footprint of the plasma can be changed without adjusting the gas flows or swapping out the tool. Once the aperture and tool are in position relative to a workpiece, reactive atom plasma processing can be used to modify the surface of the workpiece, such as to etch, smooth, polish, clean, and/or deposit material onto the workpiece. If necessary, a coolant can be circulated about the aperture. Multiple apertures can also be used to provide a variety of footprint sizes and/or shapes. This description is not intended to be a complete description of, or limit the scope of, the invention. Other features, aspects, and objects of the invention can be obtained from a review of the specification, the figures, and the claims.
摘要翻译：可以使用孔径装置修改反应性原子等离子体处理工具的占地面积。反应气体流可以注入环形等离子体的中心。可以相对于等离子体定位孔，使得等离子体的有效占地面积可以在不调节气流或换出工具的情况下改变。一旦孔和工具相对于工件就位，反应性原子等离子体处理可用于改变工件的表面，例如蚀刻，光滑，抛光，清洁和/或沉积材料到工件上。如果需要，可以在孔周围循环冷却剂。也可以使用多个孔来提供各种尺寸和/或形状。本说明书不是对本发明的完整描述或限制本发明的范围。本发明的其它特征，方面和目的可以通过对说明书，附图和权利要求的评述来获得。

3. 发明授权

US4954142A Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor 失效
标题翻译：电子部件基板的化学机械研磨方法及研磨用浆料的方法
公开(公告)号：US4954142A
公开(公告)日：1990-09-04
申请号：US285435
申请日：1989-03-07
申请人： Jeffrey W. Carr , Lawrence D. David , William L. Guthrie , Frank B. Kaufman , William J. Patrick , Kenneth P. Rodbell , Robert W. Pasco , Anton Nenadic
发明人： Jeffrey W. Carr , Lawrence D. David , William L. Guthrie , Frank B. Kaufman , William J. Patrick , Kenneth P. Rodbell , Robert W. Pasco , Anton Nenadic
IPC分类号： B24B37/00 , C09G1/02 , H01L21/304 , H01L21/306 , H01L21/48
CPC分类号： H01L21/4871 , C09G1/02 , H01L21/4864
摘要： Disclosed is a method of chem-mech polishing an electronic component substrate. The method includes the following steps;obtaining a substrate having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; andcontacting the substrate with a polishing pad while contacting the substrate with a slurry containing the etchant wherein the slurry includes abrasive particles, a transition metal chelated salt and a solvent for the salt.The chem-mech polishing causes the at least two features to be substantially coplanar. Also disclosed is the chem-mech polishing slurry.
摘要翻译：公开了电子部件基板的化学研磨方法。该方法包括以下步骤：获得其上具有至少两个特征的衬底，其中相对于特定蚀刻剂具有不同的蚀刻速率; 以及使所述基板与抛光垫接触，同时使所述基板与含有所述蚀刻剂的浆料接触，其中所述浆料包括磨料颗粒，过渡金属螯合盐和所述盐的溶剂。化学铣削使得至少两个特征基本上共面。还公开了化学研磨浆料。

4. 发明授权

US07591957B2 Method for atmospheric pressure reactive atom plasma processing for surface modification 有权
标题翻译：用于表面改性的大气压反应原子等离子体处理方法
公开(公告)号：US07591957B2
公开(公告)日：2009-09-22
申请号：US10002483
申请日：2001-11-01
申请人： Jeffrey W. Carr
发明人： Jeffrey W. Carr
IPC分类号： B23K9/00 , H05B1/00 , H05B11/00
CPC分类号： H01L21/67092 , B23K1/206 , C03C15/00 , C04B41/53 , C04B41/91 , C23C16/047 , H05H1/30 , H05H2245/123
摘要： Reactive atom plasma processing can be used to shape, polish, planarize and clean the surfaces of difficult materials with minimal subsurface damage. The apparatus and methods use a plasma torch, such as a conventional ICP torch. The workpiece and plasma torch are moved with respect to each other, whether by translating and/or rotating the workpiece, the plasma, or both. The plasma discharge from the torch can be used to shape, planarize, polish, and/or clean the surface of the workpiece, as well as to thin the workpiece. The processing may cause minimal or no damage to the workpiece underneath the surface, and may involve removing material from the surface of the workpiece.
摘要翻译：反应性原子等离子体处理可以用最小的地下损伤来塑造，抛光，平坦化和清洁困难材料的表面。该装置和方法使用诸如常规ICP喷枪的等离子体焰炬。无论是通过平移和/或旋转工件，等离子体还是两者，工件和等离子体焰炬相对于彼此移动。来自焊炬的等离子体放电可用于成形，平坦化，抛光和/或清洁工件的表面，以及使工件变薄。该处理可能对表面下方的工件造成最小的损伤或没有损坏，并且可能涉及从工件的表面移除材料。

5. 发明授权

US07955513B2 Apparatus and method for reactive atom plasma processing for material deposition 有权
标题翻译：用于材料沉积的反应性原子等离子体处理的装置和方法
公开(公告)号：US07955513B2
公开(公告)日：2011-06-07
申请号：US11962012
申请日：2007-12-20
申请人： Jeffrey W. Carr
发明人： Jeffrey W. Carr
IPC分类号： B44C1/22
CPC分类号： H01J37/32376 , C23C16/0245 , C23C16/047 , C23C16/513 , H01L21/31051 , H05H1/30
摘要： A method for shaping a surface of a workpiece, comprises positioning at least one of a workpiece and an inductively-coupled plasma (ICP) torch including three concentrically arranged tubes. A plasma gas is introduced to an outer tube of the ICP torch and energy is transferred from a radio frequency (RF) power source to the plasma gas to generate an excitation zone at least partially downstream of the ICP torch. A reactive reactive precursor is introduced to the excitation zone, and an auxiliary gas is introduced to the intermediate tube to control a position of the excitation zone relative to the ICP torch so that a controlled distribution of reactive species is formed. The surface is shaped by removing material from the surface of the workpiece with at least a portion of the reactive species and adding material to the surface of the workpiece with at least a portion of the reactive species.
摘要翻译：一种用于成形工件表面的方法，包括定位工件和包括三个同心布置的管的感应耦合等离子体（炬）手电筒中的至少一个。将等离子体气体引入ICP喷枪的外管，并且能量从射频（RF）电源传送到等离子体气体，以在ICP焊枪的至少部分的下游产生激发区域。将反应性反应性前体引入激发区，并且将辅助气体引入中间管以控制激发区相对于ICP炬的位置，从而形成受控分布的反应性物质。通过用至少一部分反应性物质从工件的表面除去材料并且用至少一部分反应性物质将材料添加到工件的表面来成形该表面。

6. 发明授权

US07510664B2 Apparatus and method for atmospheric pressure reactive atom plasma processing for shaping of damage free surfaces 有权
公开(公告)号：US07510664B2
公开(公告)日：2009-03-31
申请号：US10002035
申请日：2001-11-01
申请人： Jeffrey W. Carr
发明人： Jeffrey W. Carr
IPC分类号： B29D11/00 , C23F1/00
CPC分类号： H01L21/67092 , B23K1/206 , C03C15/00 , C04B41/009 , C04B41/53 , C04B41/91 , C23C16/047 , C23C16/513 , H05H1/30 , C04B41/0054 , C04B35/117 , C04B35/565
摘要： Fabrication apparatus and methods are disclosed for shaping and finishing difficult materials with no subsurface damage. The apparatus and methods use an atmospheric pressure mixed gas plasma discharge as a sub-aperture polisher of, for example, fused silica and single crystal silicon, silicon carbide and other materials. In one example, workpiece material is removed at the atomic level through reaction with fluorine atoms. In this example, these reactive species are produced by a noble gas plasma from trace constituent fluorocarbons or other fluorine containing gases added to the host argon matrix. The products of the reaction are gas phase compounds that flow from the surface of the workpiece, exposing fresh material to the etchant without condensation and redeposition on the newly created surface. The discharge provides a stable and predictable distribution of reactive species permitting the generation of a predetermined surface by translating the plasma across the workpiece along a calculated path.

7. 发明授权

US5617273A Thin film slider with protruding R/W element formed by chemical-mechanical polishing 失效
标题翻译：通过化学机械抛光形成的具有突出R / W元件的薄膜滑块
公开(公告)号：US5617273A
公开(公告)日：1997-04-01
申请号：US481574
申请日：1995-06-07
申请人： Jeffrey W. Carr , Jeffrey P. Gunder
发明人： Jeffrey W. Carr , Jeffrey P. Gunder
IPC分类号： G11B5/10 , G11B5/255 , G11B5/31 , G11B5/39 , G11B5/60 , G11B21/21 , G11B5/127 , G11B5/33 , G11B17/32
CPC分类号： G11B5/6005 , G11B5/102 , G11B5/255 , G11B5/3103 , G11B5/3106 , G11B5/3903 , G11B5/3163 , Y10T29/49041 , Y10T29/49046 , Y10T29/49048
摘要： A composite thin film slider with a protruding R/W device formed by chemical-mechanical polishing to protrude above its substrate and thereby reduce the distance between the R/W device and the recording media. The slider includes a ceramic or non-ceramic substrate with a substantially planar bearing surface, and a R/W device. The R/W device includes an insulator and certain conductive R/W components, deposited onto the substrate's deposit end. The R/W components may include, for example, a magnetic shield layer, a MR stripe layer, and a magnetic pole tip layer, all layered over the deposit end of the substrate. The R/W components protrude from the insulator sufficiently to extend past the substrate's bearing surface. To manufacture this slider, a substrate with the R/W device deposited thereon is polished with a lapping slurry to disproportionately erode the substrate and insulator with respect to the R/W components. The R/W components therefore protrude from the insulator and the ceramic substrate's bearing surface.
摘要翻译：一种复合薄膜滑块，其具有通过化学机械抛光形成的突出的R / W装置，以在其基板上突出，从而减小R / W装置与记录介质之间的距离。滑块包括具有基本上平面的支承表面的陶瓷或非陶瓷基板以及R / W装置。 R / W器件包括沉积在衬底沉积端上的绝缘体和某些导电R / W元件。 R / W组件可以包括例如磁性屏蔽层，MR条纹层和磁极尖端层，全部层叠在衬底的沉积端上。 R / W组件从绝缘体充分突出以延伸穿过基板的支承表面。为了制造该滑块，用研磨浆料抛光其上沉积有R / W器件的衬底，以相对于R / W部件不正常地侵蚀衬底和绝缘体。因此，R / W部件从绝缘体和陶瓷基板的支承表面突出。

8. 发明授权

US07371992B2 Method for non-contact cleaning of a surface 失效
标题翻译：表面非接触清洁方法
公开(公告)号：US07371992B2
公开(公告)日：2008-05-13
申请号：US10384506
申请日：2003-03-07
申请人： Jeffrey W. Carr
发明人： Jeffrey W. Carr
IPC分类号： B23K10/06
CPC分类号： H01L21/02046 , B08B7/0035 , C03C23/007 , C03C23/0075 , G03F1/82 , H01L21/3065 , H01L21/67028 , H05H1/30
摘要： A flame torch can be used to clean the surface of a contact-sensitive object, such as a glass optic, extremely thin workpiece, or semiconductor wafer by providing a reactive precursor gas to the feed gases of the torch. Reactive atom plasma processing can be used to clean the surface of a contaminant that chemically combines with the atomic radicals of the precursor without affecting the surface. The torch can also be used to modify the surface after cleaning, without transferring the object or engaging in any intermediate processing, by supplying a second reactive precursor that reacts with the surface itself. The flame torch can be used to shape, polish, etch, planarize, deposit, chemically modify and/or redistribute material on the surface of the object.This description is not intended to be a complete description of, or limit the scope of, the invention. Other features, aspects, and objects of the invention can be obtained from a review of the specification, the figures, and the claims.
摘要翻译：火焰焰炬可用于通过向火炬的进料气体提供反应性前体气体来清洁诸如玻璃光学元件，极薄工件或半导体晶片的接触敏感物体的表面。反应性原子等离子体处理可用于清洁与前体的原子自由基化学结合而不影响表面的污染物的表面。通过提供与表面本身反应的第二反应性前体，手电筒也可用于在清洁之后改变表面，而不转移物体或进行任何中间加工。火焰焰炬可用于在物体的表面上成形，抛光，蚀刻，平面化，沉积，化学修饰和/或重新分布材料。本说明书不是对本发明的完整描述或限制本发明的范围。本发明的其它特征，方面和目的可以通过对说明书，附图和权利要求的评述来获得。

9. 发明授权

US07311851B2 Apparatus and method for reactive atom plasma processing for material deposition 有权
标题翻译：用于材料沉积的反应性原子等离子体处理的装置和方法
公开(公告)号：US07311851B2
公开(公告)日：2007-12-25
申请号：US10608384
申请日：2003-06-27
申请人： Jeffrey W. Carr
发明人： Jeffrey W. Carr
IPC分类号： B44C1/22
CPC分类号： H01J37/32376 , C23C16/0245 , C23C16/047 , C23C16/513 , H01L21/31051 , H05H1/30
摘要： Reactive atom plasma processing can be used to shape, polish, planarize, and clean surfaces of difficult materials with minimal subsurface damage. The apparatus and methods use a plasma torch, such as a conventional ICP torch. The workpiece and plasma torch are moved with respect to each other, whether by translating and/or rotating the workpiece, the plasma, or both. The plasma discharge from the torch can be used to shape, planarize, polish, clean and/or deposit material on the surface of the workpiece, as well as to thin the workpiece. The processing may cause minimal or no damage to the workpiece underneath the surface, and may involve removing material from, and/or redistributing material on, the surface of the workpiece.This description is not intended to be a complete description of, or limit the scope of, the invention. Other features, aspects, and objects of the invention can be obtained from a review of the specification, the figures, and the claims.
摘要翻译：反应性原子等离子体处理可用于以最小的地下损伤来形成，抛光，平坦化和清洁困难材料的表面。该装置和方法使用诸如常规ICP喷枪的等离子体焰炬。无论是通过平移和/或旋转工件，等离子体还是两者，工件和等离子体焰炬相对于彼此移动。来自焊炬的等离子体放电可以用于在工件的表面上成形，平坦化，抛光，清洁和/或沉积材料，以及使工件变薄。该加工可能对表面下方的工件造成最小或不损坏，并且可能涉及从工件的表面上移除材料和/或重新分布材料。本说明书不是对本发明的完整描述或限制本发明的范围。本发明的其它特征，方面和目的可以通过对说明书，附图和权利要求的评述来获得。

10. 发明授权

US06660177B2 Apparatus and method for reactive atom plasma processing for material deposition 有权
公开(公告)号：US06660177B2
公开(公告)日：2003-12-09
申请号：US10008236
申请日：2001-11-07
申请人： Jeffrey W. Carr
发明人： Jeffrey W. Carr
IPC分类号： H01L2100
CPC分类号： H01J37/32376 , C23C16/0245 , C23C16/047 , C23C16/513 , H01L21/31051 , H05H1/30
摘要： Reactive atom plasma processing can be used to shape, polish, planarize, and clean surfaces of difficult materials with minimal subsurface damage. The apparatus and methods use a plasma torch, such as a conventional ICP torch. The workpiece and plasma torch are moved with respect to each other, whether by translating and/or rotating the workpiece, the plasma, or both. The plasma discharge from the torch can be used to shape, planarize, polish, clean and/or deposit material on the surface of the workpiece, as well as to thin the workpiece. The processing may cause minimal or no damage to the workpiece underneath the surface, and may involve removing material from, and/or redistributing material on, the surface of the workpiece.

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