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    • 1. 发明授权
    • Systems and methods utilizing an aperture with a reactive atom plasma torch
    • 使用具有反应性原子等离子体焰炬的孔的系统和方法
    • US07304263B2
    • 2007-12-04
    • US10911821
    • 2004-08-05
    • Andrew ChangJeffrey W. CarrJude KelleyPeter S. Fiske
    • Andrew ChangJeffrey W. CarrJude KelleyPeter S. Fiske
    • B23K9/00
    • H05H1/30
    • The footprint of a reactive atom plasma processing tool can be modified using an aperture device. A flow of reactive gas can be injected into the center of an annular plasma. An aperture can be positioned relative to the plasma such that the effective footprint of the plasma can be changed without adjusting the gas flows or swapping out the tool. Once the aperture and tool are in position relative to a workpiece, reactive atom plasma processing can be used to modify the surface of the workpiece, such as to etch, smooth, polish, clean, and/or deposit material onto the workpiece. If necessary, a coolant can be circulated about the aperture. Multiple apertures can also be used to provide a variety of footprint sizes and/or shapes. This description is not intended to be a complete description of, or limit the scope of, the invention. Other features, aspects, and objects of the invention can be obtained from a review of the specification, the figures, and the claims.
    • 可以使用孔径装置修改反应性原子等离子体处理工具的占地面积。 反应气体流可以注入环形等离子体的中心。 可以相对于等离子体定位孔,使得等离子体的有效占地面积可以在不调节气流或换出工具的情况下改变。 一旦孔和工具相对于工件就位,反应性原子等离子体处理可用于改变工件的表面,例如蚀刻,光滑,抛光,清洁和/或沉积材料到工件上。 如果需要,可以在孔周围循环冷却剂。 也可以使用多个孔来提供各种尺寸和/或形状。 本说明书不是对本发明的完整描述或限制本发明的范围。 本发明的其它特征,方面和目的可以通过对说明书,附图和权利要求的评述来获得。
    • 2. 发明授权
    • Systems and methods for laser-assisted plasma processing
    • 激光辅助等离子体处理的系统和方法
    • US07297892B2
    • 2007-11-20
    • US10913739
    • 2004-08-06
    • Jude KelleyJeffrey W. CarrPeter S. Fiske
    • Jude KelleyJeffrey W. CarrPeter S. Fiske
    • B23K9/00B23K9/02
    • C04B41/009B08B7/0035C03C15/00C03C23/006C03C23/0075C04B41/5346C04B41/91G02B6/136H05H1/30C04B41/0036C04B35/14C04B35/565
    • A controllable heat source, such as a laser or flame torch, can be used to pre-heat a portion of the surface of a workpiece, such as a glass optic or semiconductor wafer. Reactive atom plasma (RAP) processing can be used to modify the pre-heated surface portion, as the pre-heated material will more readily chemically combine with the atomic radicals of the precursor in the plasma. A RAP torch, such as an ICP plasma torch, MIP plasma torch, or flame torch, can be used to shape, polish, etch, planarize, deposit, chemically modify and/or redistribute material on the surface of the workpiece. The material modified by the torch can substantially correspond to the pattern or portion of the surface that was pre-heated by the heat source. This description is not intended to be a complete description of, or limit the scope of, the invention. Other features, aspects, and objects of the invention can be obtained from a review of the specification, the figures, and the claims.
    • 可以使用诸如激光或火焰焰炬的可控热源来预热工件表面的一部分,例如玻璃光学或半导体晶片。 可以使用反应性原子等离子体(RAP)处理来改变预加热的表面部分,因为预热的材料将更容易地与等离子体中的前体的原子基团化学结合。 可以使用RAP手电筒,例如ICP等离子体焰炬,MIP等离子体焰炬或火焰焰炬来对工件表面上的材料进行成形,抛光,蚀刻,平面化,沉积,化学修饰和/或重新分布。 通过焊炬改性的材料可以基本上对应于由热源预热的表面的图案或部分。 本说明书不是对本发明的完整描述或限制本发明的范围。 本发明的其它特征,方面和目的可以通过对说明书,附图和权利要求的评述来获得。