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1. 发明授权

US07820311B2 Ferroelectric recording medium and writing method for the same 失效
标题翻译：铁电记录介质和写入方法相同
公开(公告)号：US07820311B2
公开(公告)日：2010-10-26
申请号：US11348485
申请日：2006-02-07
申请人： Hyoung-soo Ko , Eun-sik Kim , Sung-dong Kim , Ju-hwan Jung , Hong-sik Park , Chul-min Park , Seung-bum Hong
发明人： Hyoung-soo Ko , Eun-sik Kim , Sung-dong Kim , Ju-hwan Jung , Hong-sik Park , Chul-min Park , Seung-bum Hong
IPC分类号： G11B5/64
CPC分类号： G11B9/02 , G11C11/5657 , Y10S977/947
摘要： A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.
摘要翻译：提供铁电记录介质及其写入方法。铁电记录介质包括在接收预定的矫顽电压时反转其极化的铁电层。在铁电层上形成非挥发性各向异性导电层。当接收到低于矫顽电压的第一电压时，各向异性传导层的电阻降低，并且当接收到高于矫顽电压的第二电压时，各向异性导电层的电阻增加。通过铁电层的极化状态和各向异性导电层的电阻的组合来存储多位信息。因此，可以在铁电记录介质的一个域上表示多个位。

2. 发明授权

US07733761B2 Ferroelectric recording medium comprising anisotropic conduction layer, recording apparatus comprising the same, and recording method of the same 失效
标题翻译：包含各向异性导电层的铁电记录介质，包括其的记录装置及其记录方法
公开(公告)号：US07733761B2
公开(公告)日：2010-06-08
申请号：US11261612
申请日：2005-10-31
申请人： Hyoung-soo Ko , Ju-hwan Jung , Seung-bum Hong , Hong-sik Park , Chul-min Park , Kyoung-lock Baeck
发明人： Hyoung-soo Ko , Ju-hwan Jung , Seung-bum Hong , Hong-sik Park , Chul-min Park , Kyoung-lock Baeck
IPC分类号： G11B7/00
CPC分类号： B82Y10/00 , G11B9/02 , G11B9/1409 , G11B9/1472
摘要： Provided is a ferroelectric recording medium including a ferroelectric recording layer formed of a polarization reversal ferroelectric material and an anisotropic conduction layer that covers the ferroelectric recording layer and changes into a conductor or a non-conductor based on external energy.
摘要翻译：本发明提供一种铁电记录介质，其特征在于，具备由极化反转铁电材料形成的铁电体记录层和覆盖所述强电介质层的各向异性导电层，并且能够基于外部能量而变为导体或非导体。

3. 发明授权

US07319224B2 Semiconductor probe with resistive tip and method of fabricating the same 失效
标题翻译：具有电阻尖端的半导体探针及其制造方法
公开(公告)号：US07319224B2
公开(公告)日：2008-01-15
申请号：US11219732
申请日：2005-09-07
申请人： Hong-sik Park , Kyoung-lock Baeck , Ju-hwan Jung , Hyoung-soo Ko , Chul-min Park , Seung-bum Hong
发明人： Hong-sik Park , Kyoung-lock Baeck , Ju-hwan Jung , Hyoung-soo Ko , Chul-min Park , Seung-bum Hong
IPC分类号： G21K7/00
CPC分类号： G11B9/1409 , G01Q60/30 , Y10S977/875 , Y10S977/878 , Y10S977/879
摘要： Provided are a semiconductor probe with a resistive tip, and a method of fabricating the semiconductor probe. The method includes forming a stripe-shaped mask layer on a substrate doped with a first impurity, and forming first and second electrode regions by heavily doping portions of the substrate not covered by the mask layer with a second impurity opposite in polarity to the first impurity; annealing the substrate to decrease a gap between the first and second semiconductor electrode regions, and forming resistive regions lightly doped with the second impurity at portions contiguous with the first and second semiconductor electrode regions; forming a stripe-shaped first photoresist orthogonal to the mask layer, and etching the mask layer such that the mask layer has a square shape; forming a second photoresist on the substrate to cover a portion of the first photoresist and define a cantilever region; forming the cantilever region by etching portions not covered by the first and second photoresists; and removing the first and second photoresists, and forming a resistive tip having a semi-quadrangular pyramidal shape by etching portions of the substrate not covered by the mask layer.
摘要翻译：提供具有电阻尖端的半导体探针和制造半导体探针的方法。该方法包括在掺杂有第一杂质的衬底上形成条形掩模层，以及通过以与第一杂质极性相反的第二杂质重掺杂未被掩模层覆盖的衬底的部分来形成第一和第二电极区 ; 退火所述衬底以减小所述第一和第二半导体电极区之间的间隙，以及在与所述第一和第二半导体电极区相邻的部分形成轻掺杂有所述第二杂质的电阻区; 形成与所述掩模层正交的条状的第一光致抗蚀剂，并且蚀刻所述掩模层，使得所述掩模层具有正方形形状; 在所述基板上形成第二光致抗蚀剂以覆盖所述第一光致抗蚀剂的一部分并限定悬臂区域; 通过蚀刻未被第一和第二光致抗蚀剂覆盖的部分形成悬臂区域; 以及去除所述第一和第二光致抗蚀剂，以及通过蚀刻未被所述掩模层覆盖的所述衬底的部分，形成具有半四棱锥形形状的电阻尖端。

4. 发明授权

US07889628B2 Ferroelectric recording medium and writing method for the same 失效
标题翻译：铁电记录介质和写入方法相同
公开(公告)号：US07889628B2
公开(公告)日：2011-02-15
申请号：US12128788
申请日：2008-05-29
申请人： Hyoung-soo Ko , Eun-sik Kim , Sung-dong Kim , Ju-hwan Jung , Hong-sik Park , Chul-min Park , Seung-bum Hong
发明人： Hyoung-soo Ko , Eun-sik Kim , Sung-dong Kim , Ju-hwan Jung , Hong-sik Park , Chul-min Park , Seung-bum Hong
IPC分类号： G11B7/00
CPC分类号： G11B9/02 , G11C11/5657 , Y10S977/947
摘要： A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.
摘要翻译：提供铁电记录介质及其写入方法。铁电记录介质包括在接收预定的矫顽电压时反转其极化的铁电层。在铁电层上形成非挥发性各向异性导电层。当接收到低于矫顽电压的第一电压时，各向异性传导层的电阻降低，并且当接收到高于矫顽电压的第二电压时，各向异性导电层的电阻增加。通过铁电层的极化状态和各向异性导电层的电阻的组合来存储多位信息。因此，可以在铁电记录介质的一个域上表示多个位。

5. 发明授权

US07888718B2 Charge-dipole coupled information storage medium 失效
标题翻译：电荷偶极耦合信息存储介质
公开(公告)号：US07888718B2
公开(公告)日：2011-02-15
申请号：US10996057
申请日：2004-11-24
申请人： Ju-hwan Jung , Seung-bum Hong , Hong-sik Park
发明人： Ju-hwan Jung , Seung-bum Hong , Hong-sik Park
IPC分类号： H01L21/02
CPC分类号： H01L27/11502 , G11B9/02 , G11C11/22
摘要： An information storage medium in which charges and electric dipoles are coupled with one another. The information storage medium includes a substrate, an electrode layer formed on the substrate, a ferroelectric layer formed on the electrode layer, and an insulating layer formed on the ferroelectric layer. Accordingly, it is possible to stably record information on the information storage medium.
摘要翻译：一种信息存储介质，其中电荷和电偶极子彼此耦合。信息存储介质包括基板，形成在基板上的电极层，形成在电极层上的铁电层，以及形成在铁电层上的绝缘层。因此，可以将信息稳定地记录在信息存储介质上。

6. 发明申请

US20080030909A1 Electric field read/write head and method of manufacturing same and data read/write device 失效
标题翻译：电场读/写头及其制造方法及数据读写装置
公开(公告)号：US20080030909A1
公开(公告)日：2008-02-07
申请号：US11723567
申请日：2007-03-21
申请人： Hyoung-soo Ko , Ju-hwan Jung , Yong-su Kim , Seung-bum Hong , Hong-sik Park
发明人： Hyoung-soo Ko , Ju-hwan Jung , Yong-su Kim , Seung-bum Hong , Hong-sik Park
IPC分类号： G11B5/33 , G11B5/127 , G11B5/82
CPC分类号： G11B9/02 , Y10T29/49032
摘要： An electric field read/write head, a method of manufacturing the same, and a data read/write device including the electric field read/write head are provided. The data read/write device includes an electric field read/write head which reads and writes data to and from a recording medium. The electric field read/write head includes a semiconductor substrate, a resistance region, source and drain regions, and a write electrode. The semiconductor substrate includes a first surface and a second surface with adjoining edges. The resistance region is formed to extend from a central portion at one end of the first surface to the second surface. The source region and the drain region are formed at either side of the resistance region and are separated from the first surface. The write electrode is formed on the resistance region with an insulating layer interposed between the write electrode and the resistance region.
摘要翻译：提供电场读/写头，其制造方法以及包括电场读/写头的数据读/写装置。数据读/写装置包括从记录介质读取和写入数据的电场读/写头。电场读/写头包括半导体衬底，电阻区，源极和漏极区以及写入电极。半导体衬底包括具有相邻边缘的第一表面和第二表面。电阻区域形成为从第一表面的一端的中心部分延伸到第二表面。源极区域和漏极区域形成在电阻区域的两侧并且与第一表面分离。写电极形成在电阻区上，绝缘层位于写电极和电阻区之间。

7. 发明授权

US07142077B2 Two-axis actuator with large stage 失效
标题翻译：双轴执行器大台阶
公开(公告)号：US07142077B2
公开(公告)日：2006-11-28
申请号：US10922140
申请日：2004-08-20
申请人： Kyoung-lock Baeck , Jong-up Jun , Ju-hwan Jung , Seung-bum Hong , Dong-ki Min , Hong-sik Park
发明人： Kyoung-lock Baeck , Jong-up Jun , Ju-hwan Jung , Seung-bum Hong , Dong-ki Min , Hong-sik Park
IPC分类号： H01H51/22
CPC分类号： H02N1/008 , H02K2201/18
摘要： A two-axis actuator having a large stage area and including includes a substrate, an anchor unit having sides approximately in a rectangular shape, fixed on the substrate, a plurality of first actuating parts actuating in a first direction and separated from the substrate within regions of both sides of the anchor unit, a plurality of second actuating parts actuating in a second direction between the first actuating parts, a rectangular shaped stage that actuates in the second direction, disposed above the second actuating parts, a third actuating part formed on the first actuating part, and elevated at a predetermined distance from the stage and the anchor unit, first direction deformable springs that support the first actuating part in inner parts of the anchor unit, and second direction deformable springs formed to fix the second actuating part in an inner part of the third actuating part.
摘要翻译：具有大台阶区域的双轴致动器包括：基板，具有固定在基板上的大致矩形形状的侧面的锚定单元，多个第一致动部件，其在第一方向上致动并且在区域内与基板分离所述锚定单元的两侧的多个第二致动部件在所述第一致动部件之间沿第二方向致动，所述第二致动部件设置在所述第二致动部件上方的在所述第二方向上致动的矩形台架，第一致动部件，并且与所述平台和所述锚固单元一起预定距离地升高，所述第一方向可变形弹簧，其支撑所述锚固单元的内部部分中的所述第一致动部件;以及第二方向可变形弹簧，其形成为将所述第二致动部件固定在第三驱动部件的内部部分。

8. 发明申请

US20050052984A1 Method of writing data on a storage device using a probe technique 有权
标题翻译：使用探针技术在存储设备上写入数据的方法
公开(公告)号：US20050052984A1
公开(公告)日：2005-03-10
申请号：US10934561
申请日：2004-09-07
申请人： Seung-bum Hong , Sung-dong Kim , Ju-hwan Jung , Dong-ki Min , Hong-sik Park , Kyoung-lock Baeck , Chul-min Park , Yun-seok Kim
发明人： Seung-bum Hong , Sung-dong Kim , Ju-hwan Jung , Dong-ki Min , Hong-sik Park , Kyoung-lock Baeck , Chul-min Park , Yun-seok Kim
IPC分类号： G11B9/14 , G11B9/00 , G11B9/02 , G11B13/00
CPC分类号： B82Y10/00 , G11B9/02 , G11B9/14 , G11B9/1409 , G11B9/149 , G11B13/00 , G11B2005/0021
摘要： A method of writing data on a storage device using a probe technique. In the method of writing data on a memory device including a resistive probe used for reading and writing of data, a ferroelectric writing medium on which data is written by the resistive probe, and a lower electrode disposed on a bottom surface of the ferroelectric writing medium, heat and an electric field are applied simultaneously to a domain of the ferroelectric writing medium, on which the data will be written, by applying a voltage to the resistive probe and the lower electrode.
摘要翻译：使用探针技术在存储装置上写入数据的方法。在包括用于读取和写入数据的电阻式探头的存储器件中写入数据的方法中，由电阻式探头写入数据的铁电写入介质和设置在铁电书写介质的底表面上的下电极通过向电阻式探针和下部电极施加电压，同时将热和电场同时施加到写入数据的铁电写入介质的区域。

9. 发明申请

US20100232061A1 ELECTRIC FIELD INFORMATION READING HEAD, ELECTRIC FIELD INFORMATION WRITING/READING HEAD AND FABRICATION METHODS THEREOF AND INFORMATION STORAGE DEVICE USING THE SAME 失效
标题翻译：电场信息读取头，电场信息写入/读取头及其制造方法及其使用的信息存储装置
公开(公告)号：US20100232061A1
公开(公告)日：2010-09-16
申请号：US12300177
申请日：2007-05-10
申请人： Ju-hwan Jung , Hyoung-soo Ko , Hong-sik Park , Yong-su Kim , Seung-bum Hong
发明人： Ju-hwan Jung , Hyoung-soo Ko , Hong-sik Park , Yong-su Kim , Seung-bum Hong
IPC分类号： G11B5/127 , H01L21/336 , H01L21/78
CPC分类号： G11B9/02
摘要： Provided is an electric field information reading head for reading information from a surface electric charge of an information storage medium, the electric field information reading head comprising a semiconductor substrate having a resistance region formed in a central part at one end of a surface facing a recording medium, the resistance region being lightly doped with impurities, and source and drain regions formed on both sides of the resistance region, the source region and the drain region being more highly doped with impurities than the resistance region. The source region and the drain region extend along the surface of the semiconductor substrate facing the recording medium, and electrodes are connected electrically with the source region and the drain region respectively. In addition, provided is a method of fabricating the electric field information reading head and a method of mass-producing the electric field information reading head on a wafer.
摘要翻译：提供一种用于从信息存储介质的表面电荷读取信息的电场信息读取头，电场信息读取头包括半导体衬底，该半导体衬底具有形成在面向记录的表面的一端的中心部分的电阻区域介质，电阻区域被轻掺杂杂质，形成在电阻区两侧的源区和漏区，源极区和漏区比电阻区更加掺杂杂质。源极区域和漏极区域沿着面向记录介质的半导体衬底的表面延伸，并且电极分别与源极区域和漏极区域电连接。此外，提供了制造电场信息读取头的方法和在晶片上批量生成电场信息读取头的方法。

10. 发明授权

US07659562B2 Electric field read/write head and method of manufacturing same and data read/write device 失效
标题翻译：电场读/写头及其制造方法及数据读写装置
公开(公告)号：US07659562B2
公开(公告)日：2010-02-09
申请号：US11723567
申请日：2007-03-21
申请人： Hyoung-soo Ko , Ju-hwan Jung , Yong-su Kim , Seung-bum Hong , Hong-sik Park
发明人： Hyoung-soo Ko , Ju-hwan Jung , Yong-su Kim , Seung-bum Hong , Hong-sik Park
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119 , H01L29/34 , H01L29/74 , H01L31/111 , H01L27/14 , H01L29/82 , H01L29/84 , H01L43/00 , G11B5/187 , G11B9/00
CPC分类号： G11B9/02 , Y10T29/49032
摘要： An electric field read/write head, a method of manufacturing the same, and a data read/write device including the electric field read/write head are provided. The data read/write device includes an electric field read/write head which reads and writes data to and from a recording medium. The electric field read/write head includes a semiconductor substrate, a resistance region, source and drain regions, and a write electrode. The semiconductor substrate includes a first surface and a second surface with adjoining edges. The resistance region is formed to extend from a central portion at one end of the first surface to the second surface. The source region and the drain region are formed at either side of the resistance region and are separated from the first surface. The write electrode is formed on the resistance region with an insulating layer interposed between the write electrode and the resistance region.
摘要翻译：提供电场读/写头，其制造方法以及包括电场读/写头的数据读/写装置。数据读/写装置包括从记录介质读取和写入数据的电场读/写头。电场读/写头包括半导体衬底，电阻区，源极和漏极区以及写入电极。半导体衬底包括具有相邻边缘的第一表面和第二表面。电阻区域形成为从第一表面的一端的中心部分延伸到第二表面。源极区域和漏极区域形成在电阻区域的两侧并且与第一表面分离。写电极形成在电阻区上，绝缘层位于写电极和电阻区之间。

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