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1. 发明申请

US20050052984A1 Method of writing data on a storage device using a probe technique 有权
标题翻译：使用探针技术在存储设备上写入数据的方法
公开(公告)号：US20050052984A1
公开(公告)日：2005-03-10
申请号：US10934561
申请日：2004-09-07
申请人： Seung-bum Hong , Sung-dong Kim , Ju-hwan Jung , Dong-ki Min , Hong-sik Park , Kyoung-lock Baeck , Chul-min Park , Yun-seok Kim
发明人： Seung-bum Hong , Sung-dong Kim , Ju-hwan Jung , Dong-ki Min , Hong-sik Park , Kyoung-lock Baeck , Chul-min Park , Yun-seok Kim
IPC分类号： G11B9/14 , G11B9/00 , G11B9/02 , G11B13/00
CPC分类号： B82Y10/00 , G11B9/02 , G11B9/14 , G11B9/1409 , G11B9/149 , G11B13/00 , G11B2005/0021
摘要： A method of writing data on a storage device using a probe technique. In the method of writing data on a memory device including a resistive probe used for reading and writing of data, a ferroelectric writing medium on which data is written by the resistive probe, and a lower electrode disposed on a bottom surface of the ferroelectric writing medium, heat and an electric field are applied simultaneously to a domain of the ferroelectric writing medium, on which the data will be written, by applying a voltage to the resistive probe and the lower electrode.
摘要翻译：使用探针技术在存储装置上写入数据的方法。在包括用于读取和写入数据的电阻式探头的存储器件中写入数据的方法中，由电阻式探头写入数据的铁电写入介质和设置在铁电书写介质的底表面上的下电极通过向电阻式探针和下部电极施加电压，同时将热和电场同时施加到写入数据的铁电写入介质的区域。

2. 发明授权

US07406020B2 Method of writing data on a storage device using a probe technique 有权
标题翻译：使用探针技术在存储设备上写入数据的方法
公开(公告)号：US07406020B2
公开(公告)日：2008-07-29
申请号：US10934561
申请日：2004-09-07
申请人： Seung-bum Hong , Sung-dong Kim , Ju-hwan Jung , Dong-ki Min , Hong-sik Park , Kyoung-lock Baeck , Chul-min Park , Yun-seok Kim
发明人： Seung-bum Hong , Sung-dong Kim , Ju-hwan Jung , Dong-ki Min , Hong-sik Park , Kyoung-lock Baeck , Chul-min Park , Yun-seok Kim
IPC分类号： G11B7/00
CPC分类号： B82Y10/00 , G11B9/02 , G11B9/14 , G11B9/1409 , G11B9/149 , G11B13/00 , G11B2005/0021
摘要： A method of writing data on a storage device using a probe technique. In the method of writing data on a memory device including a resistive probe used for reading and writing of data, a ferroelectric writing medium on which data is written by the resistive probe, and a lower electrode disposed on a bottom surface of the ferroelectric writing medium, heat and an electric field are applied simultaneously to a domain of the ferroelectric writing medium, on which the data will be written, by applying a voltage to the resistive probe and the lower electrode.
摘要翻译：使用探针技术在存储装置上写入数据的方法。在包括用于读取和写入数据的电阻式探头的存储器件中写入数据的方法中，由电阻式探头写入数据的铁电写入介质和设置在铁电书写介质的底表面上的下电极通过向电阻式探针和下部电极施加电压，同时将热和电场同时施加到写入数据的铁电写入介质的区域。

3. 发明授权

US07687838B2 Resistive memory device having array of probes and method of manufacturing the resistive memory device 失效
标题翻译：具有探针阵列的电阻式存储器件和制造该阻性存储器件的方法
公开(公告)号：US07687838B2
公开(公告)日：2010-03-30
申请号：US11240570
申请日：2005-10-03
申请人： Seung-bum Hong , Ju-hwan Jung , Hyoung-soo Ko , Hong-sik Park , Dong-ki Min , Eun-sik Kim , Chul-min Park , Sung-dong Kim , Kyoung-lock Baeck
发明人： Seung-bum Hong , Ju-hwan Jung , Hyoung-soo Ko , Hong-sik Park , Dong-ki Min , Eun-sik Kim , Chul-min Park , Sung-dong Kim , Kyoung-lock Baeck
IPC分类号： H01L21/66 , H01L21/00 , G11B9/00 , G11B3/00 , G11B11/00
CPC分类号： H01L27/101 , B82Y10/00 , G11B9/02 , G11C11/22
摘要： Provided are a resistive memory device having a probe array and a method of manufacturing the same. The resistive memory device includes a memory part having a bottom electrode and a ferroelectric layer sequentially formed on a first substrate; a probe part having an array of resistive probes arranged on a second substrate, with the tips of the resistive probes facing the ferroelectric layer so as to write and read data on the ferroelectric layer; and a binding layer which grabs and fixes the resistive probes on or above the ferroelectric layer. The method of manufacturing the resistive memory device includes forming a bottom electrode and a ferroelectric layer sequentially on a first substrate; forming an array of resistive probes on a second substrate; and wafer level bonding the first substrate to the second substrate using a binding layer such that tips of the resistive probes face the ferroelectric layer.
摘要翻译：提供了具有探针阵列的电阻式存储器件及其制造方法。电阻式存储器件包括一个存储器部分，其具有顺序地形成在第一衬底上的底部电极和铁电层; 探针部分，其具有布置在第二基板上的电阻式探针阵列，其中所述电阻式探针的尖端面对强电介质层，以便在铁电层上写入和读取数据; 以及在铁电层上或上方抓住并固定电阻式探头的结合层。制造电阻式存储器件的方法包括在第一衬底上依次形成底电极和铁电层; 在第二衬底上形成电阻性探针阵列; 并且使用结合层将第一衬底与第二衬底结合到晶片级，使得电阻探针的尖端面对强电介质层。

4. 发明申请

US20060091437A1 Resistive memory device having array of probes and method of manufacturing the resistive memory device 失效
标题翻译：具有探针阵列的电阻式存储器件和制造该阻性存储器件的方法
公开(公告)号：US20060091437A1
公开(公告)日：2006-05-04
申请号：US11240570
申请日：2005-10-03
申请人： Seung-bum Hong , Ju-hwan Jung , Hyoung-soo Ko , Hong-sik Park , Dong-ki Min , Eun-sik Kim , Chul-min Park , Sung-dong Kim , Kyoung-lock Baeck
发明人： Seung-bum Hong , Ju-hwan Jung , Hyoung-soo Ko , Hong-sik Park , Dong-ki Min , Eun-sik Kim , Chul-min Park , Sung-dong Kim , Kyoung-lock Baeck
IPC分类号： H01L29/94
CPC分类号： H01L27/101 , B82Y10/00 , G11B9/02 , G11C11/22
摘要： Provided are a resistive memory device having a probe array and a method of manufacturing the same. The resistive memory device includes a memory part having a bottom electrode and a ferroelectric layer sequentially formed on a first substrate; a probe part having an array of resistive probes arranged on a second substrate, with the tips of the resistive probes facing the ferroelectric layer so as to write and read data on the ferroelectric layer; and a binding layer which grabs and fixes the resistive probes on or above the ferroelectric layer. The method of manufacturing the resistive memory device includes forming a bottom electrode and a ferroelectric layer sequentially on a first substrate; forming an array of resistive probes on a second substrate; and wafer level bonding the first substrate to the second substrate using a binding layer such that tips of the resistive probes face the ferroelectric layer.
摘要翻译：提供了具有探针阵列的电阻式存储器件及其制造方法。电阻式存储器件包括一个存储器部分，其具有顺序地形成在第一衬底上的底部电极和铁电层; 探针部分，其具有布置在第二基板上的电阻式探针阵列，其中所述电阻式探针的尖端面对强电介质层，以便在铁电层上写入和读取数据; 以及在铁电层上或上方抓住并固定电阻式探头的结合层。制造电阻式存储器件的方法包括在第一衬底上依次形成底电极和铁电层; 在第二衬底上形成电阻性探针阵列; 并且使用结合层将第一衬底与第二衬底结合到晶片级，使得电阻探针的尖端面对强电介质层。

5. 发明申请

US20060060779A1 Semiconductor probe with resistive tip and method of fabricating the same 失效
标题翻译：具有电阻尖端的半导体探针及其制造方法
公开(公告)号：US20060060779A1
公开(公告)日：2006-03-23
申请号：US11219732
申请日：2005-09-07
申请人： Hong-sik Park , Kyoung-lock Baeck , Ju-hwan Jung , Hyoung-soo Ko , Chul-min Park , Seung-bum Hong
发明人： Hong-sik Park , Kyoung-lock Baeck , Ju-hwan Jung , Hyoung-soo Ko , Chul-min Park , Seung-bum Hong
IPC分类号： G21K7/00
CPC分类号： G11B9/1409 , G01Q60/30 , Y10S977/875 , Y10S977/878 , Y10S977/879
摘要： A semiconductor probe with a resistive tip, and a method of fabricating the semiconductor probe. The method includes forming a stripe-shaped mask layer on a substrate doped with a first impurity, and forming first and second electrode regions by heavily doping portions of the substrate not covered by the mask layer with a second impurity opposite in polarity to the first impurity; annealing the substrate to decrease a gap between the first and second semiconductor electrode regions, and forming resistive regions lightly doped with the second impurity at portions contiguous with the first and second semiconductor electrode regions; forming a stripe-shaped first photoresist layer orthogonal to the mask layer, and etching the mask layer such that the mask layer has a square shape; forming a second photoresist layer on the substrate to cover a portion of the first photoresist layer and define a cantilever region; forming the cantilever region by etching portions not covered by the first and second photoresist layers; and removing the first and second photoresist layers, and forming a resistive tip having a semi-quadrangular pyramidal shape by etching portions of the substrate not covered by the mask layer.
摘要翻译：具有电阻尖端的半导体探针及其制造方法。该方法包括在掺杂有第一杂质的衬底上形成条形掩模层，以及通过以与第一杂质极性相反的第二杂质重掺杂未被掩模层覆盖的衬底的部分来形成第一和第二电极区 ; 退火所述衬底以减小所述第一和第二半导体电极区之间的间隙，以及在与所述第一和第二半导体电极区相邻的部分形成轻掺杂有所述第二杂质的电阻区; 形成与所述掩模层正交的条状的第一光致抗蚀剂层，并且蚀刻所述掩模层使得所述掩模层具有正方形形状; 在所述基板上形成第二光致抗蚀剂层以覆盖所述第一光致抗蚀剂层的一部分并限定悬臂区域; 通过蚀刻未被第一和第二光致抗蚀剂层覆盖的部分形成悬臂区域; 以及去除所述第一和第二光致抗蚀剂层，以及通过蚀刻未被所述掩模层覆盖的所述衬底的部分，形成具有半四棱锥形形状的电阻尖端。

6. 发明授权

US07733761B2 Ferroelectric recording medium comprising anisotropic conduction layer, recording apparatus comprising the same, and recording method of the same 失效
标题翻译：包含各向异性导电层的铁电记录介质，包括其的记录装置及其记录方法
公开(公告)号：US07733761B2
公开(公告)日：2010-06-08
申请号：US11261612
申请日：2005-10-31
申请人： Hyoung-soo Ko , Ju-hwan Jung , Seung-bum Hong , Hong-sik Park , Chul-min Park , Kyoung-lock Baeck
发明人： Hyoung-soo Ko , Ju-hwan Jung , Seung-bum Hong , Hong-sik Park , Chul-min Park , Kyoung-lock Baeck
IPC分类号： G11B7/00
CPC分类号： B82Y10/00 , G11B9/02 , G11B9/1409 , G11B9/1472
摘要： Provided is a ferroelectric recording medium including a ferroelectric recording layer formed of a polarization reversal ferroelectric material and an anisotropic conduction layer that covers the ferroelectric recording layer and changes into a conductor or a non-conductor based on external energy.
摘要翻译：本发明提供一种铁电记录介质，其特征在于，具备由极化反转铁电材料形成的铁电体记录层和覆盖所述强电介质层的各向异性导电层，并且能够基于外部能量而变为导体或非导体。

7. 发明授权

US07319224B2 Semiconductor probe with resistive tip and method of fabricating the same 失效
标题翻译：具有电阻尖端的半导体探针及其制造方法
公开(公告)号：US07319224B2
公开(公告)日：2008-01-15
申请号：US11219732
申请日：2005-09-07
申请人： Hong-sik Park , Kyoung-lock Baeck , Ju-hwan Jung , Hyoung-soo Ko , Chul-min Park , Seung-bum Hong
发明人： Hong-sik Park , Kyoung-lock Baeck , Ju-hwan Jung , Hyoung-soo Ko , Chul-min Park , Seung-bum Hong
IPC分类号： G21K7/00
CPC分类号： G11B9/1409 , G01Q60/30 , Y10S977/875 , Y10S977/878 , Y10S977/879
摘要： Provided are a semiconductor probe with a resistive tip, and a method of fabricating the semiconductor probe. The method includes forming a stripe-shaped mask layer on a substrate doped with a first impurity, and forming first and second electrode regions by heavily doping portions of the substrate not covered by the mask layer with a second impurity opposite in polarity to the first impurity; annealing the substrate to decrease a gap between the first and second semiconductor electrode regions, and forming resistive regions lightly doped with the second impurity at portions contiguous with the first and second semiconductor electrode regions; forming a stripe-shaped first photoresist orthogonal to the mask layer, and etching the mask layer such that the mask layer has a square shape; forming a second photoresist on the substrate to cover a portion of the first photoresist and define a cantilever region; forming the cantilever region by etching portions not covered by the first and second photoresists; and removing the first and second photoresists, and forming a resistive tip having a semi-quadrangular pyramidal shape by etching portions of the substrate not covered by the mask layer.
摘要翻译：提供具有电阻尖端的半导体探针和制造半导体探针的方法。该方法包括在掺杂有第一杂质的衬底上形成条形掩模层，以及通过以与第一杂质极性相反的第二杂质重掺杂未被掩模层覆盖的衬底的部分来形成第一和第二电极区 ; 退火所述衬底以减小所述第一和第二半导体电极区之间的间隙，以及在与所述第一和第二半导体电极区相邻的部分形成轻掺杂有所述第二杂质的电阻区; 形成与所述掩模层正交的条状的第一光致抗蚀剂，并且蚀刻所述掩模层，使得所述掩模层具有正方形形状; 在所述基板上形成第二光致抗蚀剂以覆盖所述第一光致抗蚀剂的一部分并限定悬臂区域; 通过蚀刻未被第一和第二光致抗蚀剂覆盖的部分形成悬臂区域; 以及去除所述第一和第二光致抗蚀剂，以及通过蚀刻未被所述掩模层覆盖的所述衬底的部分，形成具有半四棱锥形形状的电阻尖端。

8. 发明授权

US07889628B2 Ferroelectric recording medium and writing method for the same 失效
标题翻译：铁电记录介质和写入方法相同
公开(公告)号：US07889628B2
公开(公告)日：2011-02-15
申请号：US12128788
申请日：2008-05-29
申请人： Hyoung-soo Ko , Eun-sik Kim , Sung-dong Kim , Ju-hwan Jung , Hong-sik Park , Chul-min Park , Seung-bum Hong
发明人： Hyoung-soo Ko , Eun-sik Kim , Sung-dong Kim , Ju-hwan Jung , Hong-sik Park , Chul-min Park , Seung-bum Hong
IPC分类号： G11B7/00
CPC分类号： G11B9/02 , G11C11/5657 , Y10S977/947
摘要： A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.
摘要翻译：提供铁电记录介质及其写入方法。铁电记录介质包括在接收预定的矫顽电压时反转其极化的铁电层。在铁电层上形成非挥发性各向异性导电层。当接收到低于矫顽电压的第一电压时，各向异性传导层的电阻降低，并且当接收到高于矫顽电压的第二电压时，各向异性导电层的电阻增加。通过铁电层的极化状态和各向异性导电层的电阻的组合来存储多位信息。因此，可以在铁电记录介质的一个域上表示多个位。

9. 发明申请

US20060175644A1 Ferroelectric recording medium and writing method for the same 失效
标题翻译：铁电记录介质和写入方法相同
公开(公告)号：US20060175644A1
公开(公告)日：2006-08-10
申请号：US11348485
申请日：2006-02-07
申请人： Hyoung-soo Ko , Eun-sik Kim , Sung-dong Kim , Ju-hwan Jung , Hong-sik Park , Chul-min Park , Seung-bum Hong
发明人： Hyoung-soo Ko , Eun-sik Kim , Sung-dong Kim , Ju-hwan Jung , Hong-sik Park , Chul-min Park , Seung-bum Hong
IPC分类号： H01L29/94
CPC分类号： G11B9/02 , G11C11/5657 , Y10S977/947
摘要： A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.
摘要翻译：提供铁电记录介质及其写入方法。铁电记录介质包括在接收预定的矫顽电压时反转其极化的铁电层。在铁电层上形成非挥发性各向异性导电层。当接收到低于矫顽电压的第一电压时，各向异性传导层的电阻降低，并且当接收到高于矫顽电压的第二电压时，各向异性导电层的电阻增加。通过铁电层的极化状态和各向异性导电层的电阻的组合来存储多位信息。因此，可以在铁电记录介质的一个域上表示多个位。

10. 发明授权

US07820311B2 Ferroelectric recording medium and writing method for the same 失效
标题翻译：铁电记录介质和写入方法相同
公开(公告)号：US07820311B2
公开(公告)日：2010-10-26
申请号：US11348485
申请日：2006-02-07
申请人： Hyoung-soo Ko , Eun-sik Kim , Sung-dong Kim , Ju-hwan Jung , Hong-sik Park , Chul-min Park , Seung-bum Hong
发明人： Hyoung-soo Ko , Eun-sik Kim , Sung-dong Kim , Ju-hwan Jung , Hong-sik Park , Chul-min Park , Seung-bum Hong
IPC分类号： G11B5/64
CPC分类号： G11B9/02 , G11C11/5657 , Y10S977/947
摘要： A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.
摘要翻译：提供铁电记录介质及其写入方法。铁电记录介质包括在接收预定的矫顽电压时反转其极化的铁电层。在铁电层上形成非挥发性各向异性导电层。当接收到低于矫顽电压的第一电压时，各向异性传导层的电阻降低，并且当接收到高于矫顽电压的第二电压时，各向异性导电层的电阻增加。通过铁电层的极化状态和各向异性导电层的电阻的组合来存储多位信息。因此，可以在铁电记录介质的一个域上表示多个位。

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