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1. 发明授权

US07671616B2 Semiconductor probe having embossed resistive tip and method of fabricating the same 有权
标题翻译：具有压电电阻端头的半导体探针及其制造方法
公开(公告)号：US07671616B2
公开(公告)日：2010-03-02
申请号：US11772441
申请日：2007-07-02
申请人： Ju-hwan Jung , Jae-hong Lee , Hyung-cheol Shin , Jun-soo Kim , Seung-bum Hong
发明人： Ju-hwan Jung , Jae-hong Lee , Hyung-cheol Shin , Jun-soo Kim , Seung-bum Hong
IPC分类号： G01R31/02 , G01N23/00
CPC分类号： G01Q60/30
摘要： A semiconductor probe having an embossed resistive tip and a method of fabricating the semiconductor probe are provided. The semiconductor probe includes a protrusion portion protruded to a predetermined height on a cantilever in a first direction crossing a length direction of the cantilever, an embossed resistive tip formed on the protrusion portion, and first and second semiconductor electrode regions formed at opposite sides of the embossed resistive tip at the protrusion portion, wherein the cantilever is doped with a first dopant, the first and second semiconductor electrode regions and the embossed resistive tip are doped with a second dopant having a different polarity from the first dopant, and the embossed resistive tip is doped with a concentration lower than the first and second semiconductor electrode regions.
摘要翻译：提供具有压花电阻端头的半导体探针和制造半导体探针的方法。半导体探针包括突起部，该突起部在与悬臂的长度方向交叉的第一方向上在悬臂上突出规定的高度，形成在突出部上的压电电阻端子以及形成在突起部的相反侧的第一和第二半导体电极区域在突出部分处的压电电阻尖端，其中所述悬臂掺杂有第一掺杂剂，所述第一和第二半导体电极区域和所述压电电阻尖端掺杂有与所述第一掺杂剂具有不同极性的第二掺杂剂，并且所述压花电阻尖端掺杂浓度低于第一和第二半导体电极区域。

2. 发明授权

US08785912B2 Graphene electronic device including a plurality of graphene channel layers 有权
标题翻译：石墨烯电子器件包括多个石墨烯通道层
公开(公告)号：US08785912B2
公开(公告)日：2014-07-22
申请号：US13225988
申请日：2011-09-06
申请人： Hyun-jong Chung , Jae-hong Lee , Jae-ho Lee , Hyung-cheol Shin , Sun-ae Seo , Sung-hoon Lee , Jin-seong Heo , Hee-jun Yang
发明人： Hyun-jong Chung , Jae-hong Lee , Jae-ho Lee , Hyung-cheol Shin , Sun-ae Seo , Sung-hoon Lee , Jin-seong Heo , Hee-jun Yang
IPC分类号： H01L29/775 , B82Y99/00
CPC分类号： H01L29/1606 , H01L29/41733 , H01L29/66045 , H01L29/778 , H01L29/78684 , H01L29/78696
摘要： Graphene electronic devices may include a gate electrode on a substrate, a first gate insulating film covering the gate electrode, a plurality of graphene channel layers on the substrate, a second gate insulating film between the plurality of graphene channel layers, and a source electrode and a drain electrode connected to both edges of each of the plurality of graphene channel layers.
摘要翻译：石墨烯电子器件可以包括衬底上的栅极电极，覆盖栅电极的第一栅极绝缘膜，衬底上的多个石墨烯沟道层，多个石墨烯沟道层之间的第二栅极绝缘膜，以及源电极和连接到所述多个石墨烯通道层中的每一个的两个边缘的漏电极。

3. 发明申请

US20120168722A1 Graphene Electronic Device Including A Plurality Of Graphene Channel Layers 有权
标题翻译：石墨烯电子器件包括多个石墨烯通道层
公开(公告)号：US20120168722A1
公开(公告)日：2012-07-05
申请号：US13225988
申请日：2011-09-06
申请人： Hyun-jong Chung , Jae-hong Lee , Jae-ho Lee , Hyung-cheol Shin , Sun-ae Seo , Sung-hoon Lee , Jin-seong Heo , Hee-jun Yang
发明人： Hyun-jong Chung , Jae-hong Lee , Jae-ho Lee , Hyung-cheol Shin , Sun-ae Seo , Sung-hoon Lee , Jin-seong Heo , Hee-jun Yang
IPC分类号： H01L29/775 , B82Y99/00
CPC分类号： H01L29/1606 , H01L29/41733 , H01L29/66045 , H01L29/778 , H01L29/78684 , H01L29/78696
摘要： Graphene electronic devices may include a gate electrode on a substrate, a first gate insulating film covering the gate electrode, a plurality of graphene channel layers on the substrate, a second gate insulating film between the plurality of graphene channel layers, and a source electrode and a drain electrode connected to both edges of each of the plurality of graphene channel layers.
摘要翻译：石墨烯电子器件可以包括衬底上的栅极电极，覆盖栅电极的第一栅极绝缘膜，衬底上的多个石墨烯沟道层，多个石墨烯沟道层之间的第二栅极绝缘膜，以及源电极和连接到所述多个石墨烯通道层中的每一个的两个边缘的漏电极。

4. 发明授权

US08405133B2 Semiconductor device including graphene and method of manufacturing the semiconductor device 有权
标题翻译：包括石墨烯的半导体器件和制造半导体器件的方法
公开(公告)号：US08405133B2
公开(公告)日：2013-03-26
申请号：US13286592
申请日：2011-11-01
申请人： Hyun-jong Chung , Jae-ho Lee , Jae-hong Lee , Hyung-cheol Shin , Sun-ae Seo , Sung-hoon Lee , Jin-seong Heo , Hee-jun Yang
发明人： Hyun-jong Chung , Jae-ho Lee , Jae-hong Lee , Hyung-cheol Shin , Sun-ae Seo , Sung-hoon Lee , Jin-seong Heo , Hee-jun Yang
IPC分类号： H01L29/76
CPC分类号： H01L29/1606 , H01L29/41758 , H01L29/66477 , H01L29/778
摘要： In a semiconductor device including graphene, a gate insulating layer may be formed between a gate electrode and a graphene layer, and an interlayer insulating layer may be formed under a portion of the graphene layer under which the gate insulating layer is not formed. The gate insulating layer may include a material that has higher dielectric permittivity than the interlayer insulating layer.
摘要翻译：在包括石墨烯的半导体器件中，可以在栅电极和石墨烯层之间形成栅极绝缘层，并且可以在没有形成栅极绝缘层的石墨烯层的一部分下方形成层间绝缘层。栅极绝缘层可以包括具有比层间绝缘层更高的介电常数的材料。

5. 发明申请

US20120112250A1 Semiconductor Device Including Graphene And Method Of Manufacturing The Semiconductor Device 有权
标题翻译：包括石墨烯的半导体器件及其半导体器件的制造方法
公开(公告)号：US20120112250A1
公开(公告)日：2012-05-10
申请号：US13286592
申请日：2011-11-01
申请人： Hyun-jong Chung , Jae-ho Lee , Jae-hong Lee , Hyung-cheol Shin , Sun-ae Seo , Sung-hoon Lee , Jin-seong Heo , Hee-jun Yang
发明人： Hyun-jong Chung , Jae-ho Lee , Jae-hong Lee , Hyung-cheol Shin , Sun-ae Seo , Sung-hoon Lee , Jin-seong Heo , Hee-jun Yang
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/1606 , H01L29/41758 , H01L29/66477 , H01L29/778
摘要： In a semiconductor device including graphene, a gate insulating layer may be formed between a gate electrode and a graphene layer, and an interlayer insulating layer may be formed under a portion of the graphene layer under which the gate insulating layer is not formed. The gate insulating layer may include a material that has higher dielectric permittivity than the interlayer insulating layer.
摘要翻译：在包括石墨烯的半导体器件中，可以在栅电极和石墨烯层之间形成栅极绝缘层，并且可以在没有形成栅极绝缘层的石墨烯层的一部分下方形成层间绝缘层。栅极绝缘层可以包括具有比层间绝缘层更高的介电常数的材料。

6. 发明申请

US20070065678A1 Electro-static chuck with non-sintered aln and a method of preparing the same 审中-公开
标题翻译：具有非烧结Aln的静电卡盘及其制备方法
公开(公告)号：US20070065678A1
公开(公告)日：2007-03-22
申请号：US10575031
申请日：2004-10-06
申请人： Kyung-hyun Ko , Ha-yong Lee , Jae-hong Lee , Hung-sang Lee , Jae-jung Lee
发明人： Kyung-hyun Ko , Ha-yong Lee , Jae-hong Lee , Hung-sang Lee , Jae-jung Lee
IPC分类号： B32B9/00 , B32B19/00 , H05H1/24 , B05D1/12 , B05D3/02
CPC分类号： H01L21/6833 , C23C16/4586 , C23C24/04
摘要： The present invention relates to an electro-static chuck with non-sintered AlN and a method of preparing the same. Especially, the present invention relates to the electro-static chuck with non-sintered AlN which having coated aluminum nitride (AlN) layer as a dielectric one on the purpose of chucking the wafers in the process of wafers and a method of preparing the same. The electro-static chuck of the present invention has excellent dielectric characteristics, bonding strength and thermal conductivity by forming an AlN layer as a dielectric one without sintering process or bonding process with binders.
摘要翻译：本发明涉及具有非烧结AlN的静电卡盘及其制备方法。特别地，本发明涉及具有非烧结AlN的静电卡盘及其制备方法，该非磁性卡盘具有涂覆的氮化铝（AlN）层作为电介质，具有夹持晶片的晶片的目的。本发明的静电卡盘通过不用烧结工艺或粘合剂进行烧结工艺或粘接工艺，通过形成作为电介质的AlN层，具有优异的介电特性，结合强度和导热性。

7. 发明申请

US20060201418A1 Nozzle for cold spray and cold spray apparatus using same 失效
公开(公告)号：US20060201418A1
公开(公告)日：2006-09-14
申请号：US11188029
申请日：2005-07-22
申请人： Kyung-hyun Ko , Ha-yong Lee , Jae-hong Lee , Jae-jeong Lee , Young-ho Yu
发明人： Kyung-hyun Ko , Ha-yong Lee , Jae-hong Lee , Jae-jeong Lee , Young-ho Yu
IPC分类号： B05D7/00 , B05C19/00 , B05D1/02
CPC分类号： C23C24/04 , B05B7/1486 , B05B7/162
摘要： Disclosed is a nozzle for cold spray and a cold spray apparatus using the same. The nozzle for cold spray includes a hollow-type nozzle section. The nozzle section includes a convergence inlet section in which the cross-sectional area is converging, a throat area connected to the convergence end point of the inlet section, and an outlet section connected to the end point of the throat area. The nozzle for cold spray is provided with a spray tube located inside the convergence inlet section, the spray tube having a spray hole formed at its end point in such a way as to be placed at the throat area or the outlet section beyond the throat area. The speed of the powder flow at the outlet end point of the outlet section reaches 300-1,200 m/s.

8. 发明授权

US5812073A Method and apparatus for generating run-length limited code 失效
标题翻译：用于生成游程限制代码的方法和装置
公开(公告)号：US5812073A
公开(公告)日：1998-09-22
申请号：US510140
申请日：1995-07-31
申请人： Jae-hong Lee , Min-goo Kim , Kwang-man Ok , Yoon-woo Lee
发明人： Jae-hong Lee , Min-goo Kim , Kwang-man Ok , Yoon-woo Lee
IPC分类号： G11B20/10 , G11B20/14 , H03M5/14 , H03M7/00
CPC分类号： H03M5/145
摘要： A method and an apparatus are provided for generating an (4,20) RLL modulation code having a decreased detectible window width and an increased recording density ratio. The code's spectrum is concentrated in the low-frequency band, thereby improving the signal-to-noise ratio. In addition, the hardware of an encoder and a decoder can be easily implemented since the modulation code has a fixed codeword length.
摘要翻译：提供了一种用于产生具有降低的可检测窗口宽度和增加的记录密度比的（4,20）RLL调制码的方法和装置。代码的频谱集中在低频带，从而提高信噪比。此外，编码器和解码器的硬件可以容易地实现，因为调制码具有固定的码字长度。

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