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1. 发明授权

US08121807B2 Method and system for device reconfiguration for defect amelioration 有权
标题翻译：用于缺陷改善的设备重新配置的方法和系统
公开(公告)号：US08121807B2
公开(公告)日：2012-02-21
申请号：US12288021
申请日：2008-10-15
申请人： Joseph Warren Robinett , Philip J. Kuekes , R. Stanley Williams
发明人： Joseph Warren Robinett , Philip J. Kuekes , R. Stanley Williams
IPC分类号： G01R27/28
CPC分类号： G01R31/317
摘要： Embodiments of the present invention are directed to cost-effective defect amelioration in manufactured electronic devices that include nanoscale components. Certain embodiments of the present invention are directed to amelioration of defects in electronic devices that contain nanoscale demultiplexers. In certain embodiments of the present invention, the nanoscale-demultiplexer-containing devices include reconfigurable encoders. In one embodiment of the present invention, the table of codes within a reconfigurable encoder is permuted, and a device is configured in accordance with the permuted codes, in order to produce a permuted table of codes that, when input to an appropriately configured nanoscale demultiplexer, produces correct outputs despite defects in the nanoscale demultiplexer.
摘要翻译：本发明的实施例涉及在包括纳米级组件的制造的电子设备中的经济有效的缺陷改善。本发明的某些实施例涉及改善包含纳米级解复用器的电子设备中的缺陷。在本发明的某些实施例中，含纳米级解复用器的装置包括可重构编码器。在本发明的一个实施例中，可重构编码器内的代码表被置换，并且根据置换代码配置器件，以便产生置换的代码表，当输入到适当配置的纳米级解复用器，尽管纳米级解复用器中存在缺陷，但仍能产生正确的输出。

2. 发明申请

US20100094580A1 Method and system for device reconfiguration for defect amelioration 有权
标题翻译：用于缺陷改善的设备重新配置的方法和系统
公开(公告)号：US20100094580A1
公开(公告)日：2010-04-15
申请号：US12288021
申请日：2008-10-15
申请人： Joseph Warren Robinett , Philip J. Kuekes , R. Stanley Williams
发明人： Joseph Warren Robinett , Philip J. Kuekes , R. Stanley Williams
IPC分类号： G01R31/00
CPC分类号： G01R31/317
摘要： Embodiments of the present invention are directed to cost-effective defect amelioration in manufactured electronic devices that include nanoscale components. Certain embodiments of the present invention are directed to amelioration of defects in electronic devices that contain nanoscale demultiplexers. In certain embodiments of the present invention, the nanoscale-demultiplexer-containing devices include reconfigurable encoders. In one embodiment of the present invention, the table of codes within a reconfigurable encoder is permuted, and a device is configured in accordance with the permuted codes, in order to produce a permuted table of codes that, when input to an appropriately configured nanoscale demultiplexer, produces correct outputs despite defects in the nanoscale demultiplexer.
摘要翻译：本发明的实施例涉及在包括纳米级组件的制造的电子设备中的经济有效的缺陷改善。本发明的某些实施例涉及改善包含纳米级解复用器的电子设备中的缺陷。在本发明的某些实施例中，含纳米级解复用器的装置包括可重构编码器。在本发明的一个实施例中，可重构编码器内的代码表被置换，并且根据置换代码配置器件，以便产生置换的代码表，当输入到适当配置的纳米级解复用器，尽管纳米级解复用器中存在缺陷，但仍能产生正确的输出。

3. 发明申请

US20100091662A1 Defect-tolerant demultiplexers based on threshold logic 有权
标题翻译：基于阈值逻辑的容错解复用器
公开(公告)号：US20100091662A1
公开(公告)日：2010-04-15
申请号：US12288035
申请日：2008-10-15
申请人： Ron M. Roth , Joseph Warren Robinett , Philip J. Kuekes , R. Stanley Williams
发明人： Ron M. Roth , Joseph Warren Robinett , Philip J. Kuekes , R. Stanley Williams
IPC分类号： H04J3/14
CPC分类号： H04J3/047 , H03K17/002 , H03K19/0021 , H03K19/003
摘要： Embodiments of the present invention include defect-tolerant demultiplexer crossbars that employ, or that can be modeled by demultiplexer crossbars that employ, threshold logic “TL” elements. The threshold-logic elements provide for tolerance for signal variation on internal signals lines of a defect-tolerant demultiplexer crossbar, and thus tolerance for defects which produce internal signal variation.
摘要翻译：本发明的实施例包括采用阈值逻辑“TL”元素的采用或可以通过解复用器交叉开关建模的缺陷容许解复用器交叉开关。阈值逻辑元件提供了对于容错解复用器交叉开关的内部信号线上的信号变化的容限，并因此提供产生内部信号变化的缺陷的容限。

4. 发明授权

US07899091B2 Defect-tolerant demultiplexers based on threshold logic 有权
标题翻译：基于阈值逻辑的容错解复用器
公开(公告)号：US07899091B2
公开(公告)日：2011-03-01
申请号：US12288035
申请日：2008-10-15
申请人： Ron M. Roth , Joseph Warren Robinett , Philip J. Kuekes , R. Stanley Williams
发明人： Ron M. Roth , Joseph Warren Robinett , Philip J. Kuekes , R. Stanley Williams
IPC分类号： H04J99/00
CPC分类号： H04J3/047 , H03K17/002 , H03K19/0021 , H03K19/003
摘要： Embodiments of the present invention include defect-tolerant demultiplexer crossbars that employ, or that can be modeled by demultiplexer crossbars that employ, threshold logic “TL” elements. The threshold-logic elements provide for tolerance for signal variation on internal signals lines of a defect-tolerant demultiplexer crossbar, and thus tolerance for defects which produce internal signal variation.
摘要翻译：本发明的实施例包括采用阈值逻辑“TL”元素的采用或可以通过解复用器交叉开关建模的缺陷容许解复用器交叉开关。阈值逻辑元件提供了对于容错解复用器交叉开关的内部信号线上的信号变化的容限，并因此提供产生内部信号变化的缺陷的容限。

5. 发明授权

US09323217B2 Metamaterial and dynamically reconfigurable hologram employing same 有权
标题翻译：超材料和使用相同的动态可重构全息图
公开(公告)号：US09323217B2
公开(公告)日：2016-04-26
申请号：US13142484
申请日：2008-12-29
申请人： Shih-Yuan Wang , Alexandre M. Bratkovski , R. Stanley Williams , Jingjing Li , Wei Wu , Philip J. Kuekes
发明人： Shih-Yuan Wang , Alexandre M. Bratkovski , R. Stanley Williams , Jingjing Li , Wei Wu , Philip J. Kuekes
IPC分类号： G03H1/08 , G03H1/02 , G03H1/22 , G02B1/00
CPC分类号： G03H1/02 , G02B1/007 , G03H1/2249 , G03H1/2294 , G03H2001/0224 , G03H2210/30 , G03H2225/22 , G03H2225/32 , G03H2225/33
摘要： A negative index material (or metamaterial) crossbar includes a first layer of approximately parallel nanowires and a second layer of approximately parallel nanowires that overlay the nanowires in the first layer. The nanowires in the first layer are approximately perpendicular in orientation to the nanowires in the second layer. Each nanowire of the first layer and each nanowire of the second layer has substantially regularly spaced fingers. The crossbar further includes resonant elements at nanowire intersections between the respective layers. Each resonant element includes two fingers of a nanowire in the first layer and two fingers of a nanowire in the second layer.
摘要翻译：负指数材料（或超材料）横杆包括大致平行的纳米线的第一层和覆盖第一层中的纳米线的大致平行的纳米线的第二层。第一层中的纳米线在第二层中与纳米线的取向近似垂直。第一层的每个纳米线和第二层的每个纳米线具有基本上规则间隔的指状物。横杆还包括在各层之间的纳米线交叉处的共振元件。每个谐振元件包括第一层中的纳米线的两个指状物和第二层中的纳米线的两个指状物。

6. 发明授权

US08447146B2 Photonic interconnect method 有权
标题翻译：光子互连方法
公开(公告)号：US08447146B2
公开(公告)日：2013-05-21
申请号：US12008605
申请日：2008-01-11
申请人： Raymond G. Beausoleil , Philip J. Kuekes , William J. Munro , Timothy P. Spiller , R. Stanley Williams , Sean D. Barrett
发明人： Raymond G. Beausoleil , Philip J. Kuekes , William J. Munro , Timothy P. Spiller , R. Stanley Williams , Sean D. Barrett
IPC分类号： G02B6/12
CPC分类号： G02F1/01 , B82Y20/00 , G02B6/12007 , G02B6/1225 , G02B6/43 , G02F2202/32 , G02F2203/585 , H04B10/801
摘要： A photonic interconnect method avoids high capacitance electric interconnects by using optical signals to communicate data between devices. The method can provide massively parallel information output by mapping logical addresses to frequency bands, so that modulation of a selected frequency band can encode information for a specific location corresponding to the logical address. Wavelength-specific directional couplers, modulators, and detectors, which can be fabricated at defects in a photonic bandgap crystal, can be employed for the photonic interconnect method. The interconnect method can be used for both classical and quantum information processing.
摘要翻译：光子互连方法通过使用光信号在设备之间传送数据来避免高电容电互连。该方法可以通过将逻辑地址映射到频带来提供大量并行信息输出，使得所选频带的调制可以对与逻辑地址相对应的特定位置的信息进行编码。可以在光子互连方法中使用可在光子带隙晶体的缺陷处制造的波长特异性定向耦合器，调制器和检测器。互连方法可用于经典和量子信息处理。

7. 发明授权

US08112700B2 Nanoscale interconnection interface 有权
标题翻译：纳米级互连接口
公开(公告)号：US08112700B2
公开(公告)日：2012-02-07
申请号：US12011175
申请日：2008-01-23
申请人： Philip J. Kuekes , J. Warren Robinett , Gadiel Seroussl , R. Stanley Williams
发明人： Philip J. Kuekes , J. Warren Robinett , Gadiel Seroussl , R. Stanley Williams
IPC分类号： G11C29/00
CPC分类号： G11C13/0023 , B82Y10/00 , G06F11/1016 , G11C8/10 , G11C11/54 , G11C13/0002 , G11C2213/77 , G11C2213/81
摘要： One embodiment of the present invention provides a demultiplexer implemented as a nanowire crossbar or a hybrid nanowire/microscale-signal-line crossbar with resistor-like nanowire junctions. The demultiplexer of one embodiment provides demultiplexing of signals input on k microscale address lines to 2k or fewer nanowires, employing supplemental, internal address lines to map 2k nanowire addresses to a larger, internal, n-bit address space, where n>k. A second demultiplexer embodiment of the present invention provides demultiplexing of signals input on n microscale address lines to 2k nanowires, with n>k, using 2k, well-distributed, n-bit external addresses to access the 2k nanowires. Additional embodiments of the present invention include a method for evaluating different mappings of nanowire addresses to internal address-spaces of different sizes, or to evaluate mappings of nanowires to external address-spaces of different sizes, metrics for evaluating address mapping and demultiplexer designs, and demultiplexer design methods.
摘要翻译：本发明的一个实施例提供了一种解复用器，其实现为纳米线交叉开关或具有电阻器状纳米线结的混合纳米线/微型信号线交叉开关。一个实施例的解复用器提供在k个微米地址线上输入的信号到2k个或更少的纳米线的解复用，采用补充的内部地址线将2k个纳米线地址映射到更大的内部n位地址空间，其中n> k。本发明的第二解复用器实施例使用2k，均匀分布的n位外部地址来访问2k纳米线，在n个微米级地址线上输入的信号到2k纳米线解复用n> k。本发明的另外的实施例包括用于评估纳米线地址与不同大小的内部地址空间的不同映射的方法，或者评估纳米线与不同大小的外部地址空间的映射，用于评估地址映射和解复用器设计的度量，以及解复用器设计方法。

8. 发明申请

US20110273755A1 DYNAMICALLY RECONFIGURABLE HOLOGRAMS 有权
标题翻译：动态可重构的HOLOGRAMS
公开(公告)号：US20110273755A1
公开(公告)日：2011-11-10
申请号：US13142484
申请日：2008-12-29
申请人： Shih-Yuan Wang , Alexandre M. Bratkovski , R. Stanley Williams , Jingjing Li , Wei Wu , Philip J. Kuekes
发明人： Shih-Yuan Wang , Alexandre M. Bratkovski , R. Stanley Williams , Jingjing Li , Wei Wu , Philip J. Kuekes
IPC分类号： G03H1/14 , H01L45/00 , B82Y99/00
CPC分类号： G03H1/02 , G02B1/007 , G03H1/2249 , G03H1/2294 , G03H2001/0224 , G03H2210/30 , G03H2225/22 , G03H2225/32 , G03H2225/33
摘要： Various embodiments of the present invention relate to systems that can be used as holograms and can be electronically controlled and dynamically reconfigured to generate three-dimensional motion picture images. In one embodiment, a dynamically reconfigurable hologram (1200) comprises a phase-control layer (1202) including a two-dimensional array of phase-modulation pixels (1212). The hologram also comprises an intensity-control layer (1204) including a two-dimensional array of intensity-control pixels (1214). One or more three-dimensional motion pictures can be produced by electronically addressing the individual phase-modulation pixels and intensity-control pixels in order to phase and control the intensity of light emanating from pixels of the hologram.
摘要翻译：本发明的各种实施例涉及可以用作全息图并且可以被电子控制和动态重新配置以产生三维运动图像图像的系统。在一个实施例中，动态可重构全息图（1200）包括包括相位调制像素的二维阵列（1212）的相位控制层（1202）。全息图还包括包括强度控制像素（1214）的二维阵列的强度控制层（1204）。可以通过电子地寻址各个相位调制像素和强度控制像素来产生一个或多个三维运动图像，以便相位和控制从全息图像素发出的光的强度。

9. 发明授权

US07922919B2 Crossbar-array designs and wire addressing methods that tolerate misalignment of electrical components at wire overlap points 有权
标题翻译：横线阵列设计和线寻址方法，可以容忍电线重叠点处的电气元件的未对准
公开(公告)号：US07922919B2
公开(公告)日：2011-04-12
申请号：US11906886
申请日：2007-10-03
申请人： Wei Wu , Philip J. Kuekes , R. Stanley Williams
发明人： Wei Wu , Philip J. Kuekes , R. Stanley Williams
IPC分类号： H01B13/00
CPC分类号： G11C13/025 , B82Y10/00 , B82Y30/00 , G11C2213/16 , G11C2213/17 , H01L21/76838 , H01L23/53271 , H01L2221/1094 , H01L2924/0002 , Y10S977/721 , Y10S977/742 , H01L2924/00
摘要： Various embodiments of the present invention are directed to crossbar array designs that interfaces wires to address wires, despite misalignments between electrical components and wires. In one embodiment, a nanoscale device may be composed of a first layer of two or more wires and a second layer of two or more address wires that overlays the first layer. The nanoscale device may also include an intermediate layer positioned between the first layer and the second layer. Two or more redundant electrical component patterns may be fabricated within the intermediate layer so that one or more of the electrical component patterns is aligned with the first and second layers.
摘要翻译：尽管本发明的各种实施例涉及将电线接合到地址线的交叉列阵列设计，尽管电气部件和电线之间未对准。在一个实施例中，纳米级器件可以由两条或更多条线的第一层和覆盖第一层的两条或更多条地址线的第二层组成。纳米级器件还可以包括位于第一层和第二层之间的中间层。可以在中间层内制造两个或更多个冗余电组件图案，使得一个或多个电组件图案与第一层和第二层对准。

10. 发明申请

US20110024714A1 Nanoscale Three-Terminal Switching Device 有权
标题翻译：纳米三端开关装置
公开(公告)号：US20110024714A1
公开(公告)日：2011-02-03
申请号：US12512230
申请日：2009-07-30
申请人： Wei Wu , Qiangfei Xia , Philip J. Kuekes , R. Stanley Williams
发明人： Wei Wu , Qiangfei Xia , Philip J. Kuekes , R. Stanley Williams
IPC分类号： H01L45/00 , H01L21/34
CPC分类号： H01L29/775 , B82Y10/00 , H01L27/2463 , H01L29/0665 , H01L29/0673 , H01L45/08 , H01L45/1206 , H01L45/122 , H01L45/145 , H01L45/146 , H01L45/148 , H01L45/16 , H01L45/165
摘要： A nanoscale three-terminal switching device has a bottom electrode, a top electrode, and a side electrode, each of which may be a nanowire. The top electrode extends at an angle with respect to the bottom electrode and has an end section going over and overlapping the bottom electrode. An active region is disposed between the top electrode and bottom electrode and contains a switching material. The side electrode is disposed opposite from the top electrode and in electrical contact with the active region. A self-aligned fabrication process may be used to automatically align the formation of the top and side electrodes with respect to the bottom electrode.
摘要翻译：纳米尺寸的三端子开关器件具有底部电极，顶部电极和侧面电极，每个电极可以是纳米线。顶部电极相对于底部电极以一定角度延伸，并且具有一个末端部分并且与底部电极重叠。有源区设置在顶电极和底电极之间并且包含开关材料。侧电极与顶电极相对设置并与有源区电接触。可以使用自对准制造工艺来相对于底部电极自动对准顶部和侧面电极的形成。

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