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1. 发明授权

US6117266A Furnace for continuous, high throughput diffusion processes from various diffusion sources 失效
标题翻译：用于来自各种扩散源的连续，高通量扩散过程的炉
公开(公告)号：US6117266A
公开(公告)日：2000-09-12
申请号：US64648
申请日：1998-04-22
申请人： Jorg Horzel , Jozef Szlufcik , Johan Nijs
发明人： Jorg Horzel , Jozef Szlufcik , Johan Nijs
IPC分类号： H01L21/00 , A23F1/02 , H05B3/02
CPC分类号： H01L21/67173 , H01L21/67109 , H01L21/67115 , H01L21/67236 , Y10S438/907
摘要： An open apparatus is described for the processing of planar thin semiconductor substrates, particularly for the processing of solar cells. The apparatus includes a first zone for the drying and burn-out of organic components from solid or liquid based dopant sources pre-applied to the substrates. The zone is isolated from the remaining zones of the apparatus by an isolating section to prevent cross-contamination between burn-out zone and the remaining processing zones. All the zones of the apparatus may be formed from a quartz tube around which heaters are placed for raising the temperature inside the quartz tube. Each zone may be purged with a suitable mixture of gases, e.g. inert gases such as argon, as well as oxygen and nitrogen. The zones may also be provided with gaseous dopants such as POCl.sub.3 and the present invention includes the sequential diffusion of more than one dopant into the substrates. Some of the zones may be used for driving-in the dopants alternatively, for other processes, e.g. oxidation. The present invention also includes a method of operating the apparatus and the use of the apparatus in processing solar cells.
摘要翻译：描述了用于处理平面薄型半导体衬底，特别是用于太阳能电池的处理的开放式设备。该装置包括用于从预先施加到基底的固体或液体基础的掺杂剂源干燥和燃尽有机成分的第一区域。该区域通过隔离部分与设备的其余区域隔离，以防止燃尽区域和其余处理区域之间的交叉污染。设备的所有区域可以由石英管形成，在该石英管周围放置加热器以提高石英管内的温度。每个区域可以用合适的气体混合物吹扫，例如，惰性气体如氩气，以及氧气和氮气。这些区域还可以设置有气体掺杂剂例如POCl 3，本发明包括多于一种掺杂剂顺序扩散到衬底中。一些区域可以用于驱动掺杂剂，或者用于其它工艺，例如，氧化。本发明还包括操作该装置的方法以及该装置在处理太阳能电池中的用途。

2. 发明授权

US06384317B1 Solar cell and process of manufacturing the same 有权
标题翻译：太阳能电池和制造过程相同
公开(公告)号：US06384317B1
公开(公告)日：2002-05-07
申请号：US09445099
申请日：2000-04-03
申请人： Emmanuel Van Kerschaver , Jozef Szlufcik , Roland Einhaus , Johan Nijs
发明人： Emmanuel Van Kerschaver , Jozef Szlufcik , Roland Einhaus , Johan Nijs
IPC分类号： H01L310224
CPC分类号： H01L31/1804 , H01L31/02245 , H01L31/03529 , Y02E10/547 , Y02P70/521
摘要： The solar cell in the semiconductor substrate includes at least a radiation receiving front surface and a second surface. The substrate includes a first region of one type of conductivity and a second region of the opposite conductivity type with at least a first part located adjacent to the front surface and a second part located adjacent to the second surface. The front surface includes conductive contacts to the second region and the second surface has separated contacts to the first region and to the second region. The contacts to the second region at the second surface are connected to the contacts at the front surface through a limited number of vias.
摘要翻译：半导体衬底中的太阳能电池至少包括辐射接收前表面和第二表面。衬底包括一种导电类型的第一区域和相反导电类型的第二区域，其中至少第一部分位于邻近前表面的第一部分和与第二表面相邻的第二部分。前表面包括到第二区域的导电触点，并且第二表面具有到第一区域和第二区域的分离的触点。在第二表面处的第二区域的触点通过有限数量的通孔连接到前表面上的触点。

3. 发明授权

US06552414B1 Semiconductor device with selectively diffused regions 有权
标题翻译：具有选择性扩散区域的半导体器件
公开(公告)号：US06552414B1
公开(公告)日：2003-04-22
申请号：US09331932
申请日：1999-08-27
申请人： Jörg Horzel , Jozef Szlufcik , Mia Honoré , Johan Nijs
发明人： Jörg Horzel , Jozef Szlufcik , Mia Honoré , Johan Nijs
IPC分类号： H01L29167
CPC分类号： H01L21/67115 , H01L21/67109 , H01L31/022425 , H01L31/068 , H01L31/0684 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The present invention describes a method of manufacturing a semiconductor device, comprising a semiconductor substrate (2) in the shape of a slice, the method comprising the steps of: step 1) selectively applying a pattern of a solids-based dopant source to a first major surface of said semiconducting substrate (2); step 2) diffusing the dopant atoms from said solids-based dopant source into said substrate (2) by a controlled heat treatment step in a gaseous environment surrounding said semi-conducting substrate (2), the dopant from said solids-based dopant source diffusing directly into said substrate (2) to form a first diffusion region (12) and, at the time, diffusing said dopant from said solids-based dopant source indirectly via said gaseous environment into said substrate (2) to form a second diffusion region (15) in at least some areas of said substrate (2) not covered by said pattern; and step 3) forming a metal contact pattern (20) substantially in alignment with said first diffusion region (12) without having etched said second diffusion region (15) substantially.
摘要翻译：本发明描述了一种制造半导体器件的方法，包括半导体衬底（2），其形状为切片，该方法包括以下步骤：步骤1）选择性地将基于固体的掺杂剂源的图案施加到第一所述半导体衬底（2）的主表面; 步骤2）通过在围绕所述半导体衬底（2）的气态环境中的受控热处理步骤将掺杂剂原子从所述基于固体的掺杂剂源扩散到所述衬底（2）中，所述基于固体的掺杂剂源扩散直接进入所述衬底（2）以形成第一扩散区（12），并且此时将所述掺杂剂从所述固体基掺杂剂源经由所述气态环境间接扩散到所述衬底（2）中以形成第二扩散区（ 15）在所述衬底（2）的至少一些未被所述图案覆盖的区域中; 和步骤3）形成基本上与所述第一扩散区域（12）对准的金属接触图案（20），而没有基本上蚀刻所述第二扩散区域（15）。

4. 发明授权

US06825104B2 Semiconductor device with selectively diffused regions 有权
标题翻译：半导体器件具有选择性扩散区域
公开(公告)号：US06825104B2
公开(公告)日：2004-11-30
申请号：US10353261
申请日：2003-01-27
申请人： Jörg Horzel , Jozef Szlufcik , Mia Honoré , Johan Nijs
发明人： Jörg Horzel , Jozef Szlufcik , Mia Honoré , Johan Nijs
IPC分类号： H01L2122
CPC分类号： H01L21/67115 , H01L21/67109 , H01L31/022425 , H01L31/068 , H01L31/0684 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The present invention describes a method of manufacturing a semiconductor device, comprising a semiconductor substrate in the shape of a slice, the method comprising the steps of: step 1) selectively applying a pattern of a solids-based dopant source to a first major surface of said semiconducting substrate; step 2) diffusing the dopant atoms from said solids-based dopant source into said substrate by a controlled heat treatment step in a gaseous environment surrounding said semi-conducting substrate, the dopant from said solids-based dopant source diffusing directly into said substrate to form a first diffusion region and, at the same time, diffusing said dopant from said solids-based dopant source indirectly via said gaseous environment into said substrate to form a second diffusion region in at least some areas of said substrate to form a second diffusion region in at least some areas of said substrate not covered by said pattern; and step 3) forming a metal contact pattern substantially in alignment with said first diffusion region without having etched said second diffusion region substantially.
摘要翻译：本发明描述了一种半导体器件的制造方法，包括半导体衬底形状，该方法包括以下步骤：步骤1）选择性地将基于固体的掺杂剂源的图案施加到第一主表面所述半导体衬底; 步骤2）通过在围绕所述半导体衬底的气态环境中的受控热处理步骤将掺杂剂原子从所述基于固体的掺杂剂源扩散到所述衬底中，所述基于固体的掺杂剂源的掺杂剂直接扩散到所述衬底中以形成第一扩散区域，并且同时将所述掺杂剂从所述基于固体的掺杂剂源经由所述气态环境扩散到所述衬底中，以在所述衬底的至少一些区域中形成第二扩散区域，以形成第二扩散区域所述衬底的至少一些区域不被所述图案覆盖; 和步骤3）形成基本上与所述第一扩散区域对准的金属接触图案，而基本上没有蚀刻所述第二扩散区域。

5. 再颁专利

USRE37512E1 Method of preparing solar cell front contacts 有权
标题翻译：制备太阳能电池前触点的方法
公开(公告)号：USRE37512E1
公开(公告)日：2002-01-15
申请号：US09525334
申请日：2000-03-10
申请人： Jozef Szlufcik , Johan Nijs , Roland Jozef Fick
发明人： Jozef Szlufcik , Johan Nijs , Roland Jozef Fick
IPC分类号： H01L3118
CPC分类号： H01L31/18 , H01L31/022425 , Y02E10/50
摘要： Method of preparing on a solar cell the top contact pattern which consists of a set of parallel narrow finger lines and wide collector lines deposited essentially at right angles to the finger lines on the semiconductor substrate, characterized in that it comprises at least the following steps: (a) screen printing and drying the set of contact finger lines; (b) printing and drying the wide collector lines on the top of the set of finger lines in a subsequent step; (c) firing both finger lines and collector lines in a single final step in order to form an ohmic contact between the finger lines and the semiconductor substrate and between the finger lines and the wide collector lines.
摘要翻译：在太阳能电池上制备顶部接触图案的方法，该顶部接触图案由基本上与半导体衬底上的指线成直角淀积的一组平行的窄指线和宽集电极线组成，其特征在于，其至少包括以下步骤：（a）丝网印刷和干燥一组接触指纹线;（b）在随后的步骤中印刷和干燥该组指纹的顶部上的宽收集线;（c）在单个最终步骤，以便在指状线和半导体衬底之间以及指状线和宽收集线之间形成欧姆接触。

6. 发明授权

US06251756B1 Furnace for continuous, high throughput diffusion processes from various diffusion sources 有权
标题翻译：用于来自各种扩散源的连续，高通量扩散过程的炉
公开(公告)号：US06251756B1
公开(公告)日：2001-06-26
申请号：US09614643
申请日：2000-07-12
申请人： Jörg Horzel , Jozef Szlufcik , Johan Nijs
发明人： Jörg Horzel , Jozef Szlufcik , Johan Nijs
IPC分类号： H01L2104
CPC分类号： H01L21/67173 , H01L21/67109 , H01L21/67115 , H01L21/67236 , Y10S438/907
摘要： An open apparatus is described for the processing of planar thin semiconductor substrates, particularly for the processing of solar cells. The apparatus includes a first zone for the drying and burn-out of organic components from solid or liquid based dopant sources pre-applied to the substrates. The zone is isolated from the remaining zones of the apparatus by an isolating section to prevent cross-contamination between burn-out zone and the remaining processing zones. All the zones of the apparatus may be formed from a quartz tube around which heaters are placed for raising the temperature inside the quartz tube. Each zone may be purged with a suitable mixture of gases, e.g. inert gases such as argon, as well as oxygen and nitrogen. The zones may also be provided with gaseous dopants such as POCl3 and the present invention includes the sequential diffusion of more than one dopant into the substrates. Some of the zones may be used for driving-in the dopants alternatively, for other processes, e.g. oxidation. The present invention also includes a method of operating the apparatus and the use of the apparatus in processing solar cells.
摘要翻译：描述了用于处理平面薄型半导体衬底，特别是用于太阳能电池的处理的开放式设备。该装置包括用于从预先施加到基底的固体或液体基础的掺杂剂源干燥和燃尽有机成分的第一区域。该区域通过隔离部分与设备的其余区域隔离，以防止燃尽区域和其余处理区域之间的交叉污染。设备的所有区域可以由石英管形成，在该石英管周围放置加热器以提高石英管内部的温度。每个区域可以用合适的气体混合物吹扫，例如，惰性气体如氩气，以及氧气和氮气。这些区域还可以设置有气体掺杂剂例如POCl 3，本发明包括多于一种掺杂剂顺序扩散到衬底中。一些区域可以用于驱动掺杂剂，或者用于其它工艺，例如，氧化。本发明还包括操作该装置的方法以及该装置在处理太阳能电池中的用途。

7. 发明授权

US5726065A Method of preparing solar cell front contacts 失效
标题翻译：制备太阳能电池前触点的方法
公开(公告)号：US5726065A
公开(公告)日：1998-03-10
申请号：US604666
申请日：1996-02-21
申请人： Jozef Szlufcik , Johan Nijs , Roland Jozef Fick
发明人： Jozef Szlufcik , Johan Nijs , Roland Jozef Fick
IPC分类号： H01L31/04 , H01L31/0224 , H01L31/18
CPC分类号： H01L31/022425 , Y02E10/50
摘要： Method of preparing on a solar cell the top contact pattern which consists of a set of parallel narrow finger lines and wide collector lines deposited essentially at right angles to the finger lines on the semiconductor substrate, characterized in that it comprises at least the following steps: (a) screen printing and drying the set of contact finger lines; (b) printing and drying the wide collector lines on the top of the set of finger lines in a subsequent step; (c) firing both finger lines and collector lines in a single final step in order to form an ohmic contact between the finger lines and the semiconductor substrate and between the finger lines and the wide collector lines.
摘要翻译：在太阳能电池上制备顶部接触图案的方法，该顶部接触图案由基本上与半导体衬底上的指线成直角淀积的一组平行的窄指线和宽集电极线组成，其特征在于，其至少包括以下步骤：（a）丝网印刷和干燥该组接触指纹线; （b）在随后的步骤中打印和干燥该组指纹顶部的宽收集线; （c）在单个最后的步骤中烧制指纹线和收集线，以便在指状线和半导体衬底之间以及指状线和宽收集线之间形成欧姆接触。

8. 发明授权

US09490377B2 Use of a uniform layer of insulating material in back-contact solar cells 有权
标题翻译：在背接触太阳能电池中使用均匀的绝缘材料层
公开(公告)号：US09490377B2
公开(公告)日：2016-11-08
申请号：US13883326
申请日：2011-11-03
申请人： Tom Borgers , Jozef Szlufcik
发明人： Tom Borgers , Jozef Szlufcik
IPC分类号： H01L31/0224 , H01L31/05
CPC分类号： H01L31/02245 , H01L31/022458 , H01L31/0516 , Y02E10/50
摘要： A uniform layer of insulating material is used to separate the connectors from the non-illuminated side of a back-contact solar cell, particularly a cell of the MWT type, the layer preferably being a uniform woven or non-woven fabric of a heat-resistant material such as glass fiber, and the electrical connection between the contact points of the cell and the connectors being made through the uniform layer thereby partially embedding the insulating material in the connection.
摘要翻译：使用均匀的绝缘材料层将连接器与背接触太阳能电池的非照射侧分离，特别是MWT型电池，该层优选为均匀的织造或非织造织物，耐热材料如玻璃纤维，并且电池和连接器的接触点之间的电连接通过均匀层制成，从而部分地将绝缘材料嵌入连接中。

9. 发明申请

US20130327390A1 USE OF A UNIFORM LAYER OF INSULATING MATERIAL IN BACK-CONTACT SOLAR CELLS 有权
标题翻译：在反接触太阳能电池中使用绝缘材料绝缘层
公开(公告)号：US20130327390A1
公开(公告)日：2013-12-12
申请号：US13883326
申请日：2011-11-03
申请人： Tom Borgers , Jozef Szlufcik
发明人： Tom Borgers , Jozef Szlufcik
IPC分类号： H01L31/0224
CPC分类号： H01L31/02245 , H01L31/022458 , H01L31/0516 , Y02E10/50
摘要： A uniform layer of insulating material is used to separate the connectors from the non-illuminated side of a back-contact solar cell, particularly a cell of the MWT type, the layer preferably being a uniform woven or non-woven fabric of a heat-resistant material such as glass fibre, and the electrical connection between the contact points of the cell and the connectors being made through the uniform layer thereby partially embedding the insulating material in the connection.
摘要翻译：使用均匀的绝缘材料层将连接器与背接触太阳能电池的非照射侧分离，特别是MWT型电池，该层优选为均匀的织造或非织造织物，耐热材料如玻璃纤维，并且电池和连接器的接触点之间的电连接通过均匀层制成，从而部分地将绝缘材料嵌入连接中。

10. 发明授权

US07196018B2 Semiconductor etching paste and the use thereof for localized etching of semiconductor substrates 失效
标题翻译：半导体蚀刻膏及其半导体衬底的局部蚀刻用途
公开(公告)号：US07196018B2
公开(公告)日：2007-03-27
申请号：US10609015
申请日：2003-06-27
申请人： Jozef Szlufcik , Emmanuel Van Kerschaver , Christophe Allebé
发明人： Jozef Szlufcik , Emmanuel Van Kerschaver , Christophe Allebé
IPC分类号： H01L21/302
CPC分类号： H01L31/1804 , C09K13/02 , H01L31/068 , H01L31/0682 , H01L31/18 , Y02E10/547 , Y02P70/521
摘要： A method of etching a semiconductor substrate is described, the method comprising the steps of applying a paste containing an etchant to the substrate, and carrying out a thermal processing step to etch a part or a layer of the substrate where the paste has been applied. The etchant paste is preferably a caustic etching paste. The etchant paste may be applied selectively to a major surface of the substrate to form a pattern of applied paste. For example, the paste may be applied by a printing method, such as screen-printing. The method may be used to produce solar cells.
摘要翻译：描述了蚀刻半导体衬底的方法，该方法包括以下步骤：将含有蚀刻剂的膏体施加到衬底上，并且执行热处理步骤以蚀刻已经施加糊料的衬底的部分或多层。蚀刻剂浆料优选为苛性蚀刻浆料。蚀刻剂浆料可以选择性地施加到基底的主表面上以形成施加的糊剂的图案。例如，可以通过诸如丝网印刷的印刷方法来施加糊状物。该方法可用于生产太阳能电池。

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