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1. 发明授权

US06552414B1 Semiconductor device with selectively diffused regions 有权
标题翻译：具有选择性扩散区域的半导体器件
公开(公告)号：US06552414B1
公开(公告)日：2003-04-22
申请号：US09331932
申请日：1999-08-27
申请人： Jörg Horzel , Jozef Szlufcik , Mia Honoré , Johan Nijs
发明人： Jörg Horzel , Jozef Szlufcik , Mia Honoré , Johan Nijs
IPC分类号： H01L29167
CPC分类号： H01L21/67115 , H01L21/67109 , H01L31/022425 , H01L31/068 , H01L31/0684 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The present invention describes a method of manufacturing a semiconductor device, comprising a semiconductor substrate (2) in the shape of a slice, the method comprising the steps of: step 1) selectively applying a pattern of a solids-based dopant source to a first major surface of said semiconducting substrate (2); step 2) diffusing the dopant atoms from said solids-based dopant source into said substrate (2) by a controlled heat treatment step in a gaseous environment surrounding said semi-conducting substrate (2), the dopant from said solids-based dopant source diffusing directly into said substrate (2) to form a first diffusion region (12) and, at the time, diffusing said dopant from said solids-based dopant source indirectly via said gaseous environment into said substrate (2) to form a second diffusion region (15) in at least some areas of said substrate (2) not covered by said pattern; and step 3) forming a metal contact pattern (20) substantially in alignment with said first diffusion region (12) without having etched said second diffusion region (15) substantially.
摘要翻译：本发明描述了一种制造半导体器件的方法，包括半导体衬底（2），其形状为切片，该方法包括以下步骤：步骤1）选择性地将基于固体的掺杂剂源的图案施加到第一所述半导体衬底（2）的主表面; 步骤2）通过在围绕所述半导体衬底（2）的气态环境中的受控热处理步骤将掺杂剂原子从所述基于固体的掺杂剂源扩散到所述衬底（2）中，所述基于固体的掺杂剂源扩散直接进入所述衬底（2）以形成第一扩散区（12），并且此时将所述掺杂剂从所述固体基掺杂剂源经由所述气态环境间接扩散到所述衬底（2）中以形成第二扩散区（ 15）在所述衬底（2）的至少一些未被所述图案覆盖的区域中; 和步骤3）形成基本上与所述第一扩散区域（12）对准的金属接触图案（20），而没有基本上蚀刻所述第二扩散区域（15）。

2. 发明授权

US06825104B2 Semiconductor device with selectively diffused regions 有权
标题翻译：半导体器件具有选择性扩散区域
公开(公告)号：US06825104B2
公开(公告)日：2004-11-30
申请号：US10353261
申请日：2003-01-27
申请人： Jörg Horzel , Jozef Szlufcik , Mia Honoré , Johan Nijs
发明人： Jörg Horzel , Jozef Szlufcik , Mia Honoré , Johan Nijs
IPC分类号： H01L2122
CPC分类号： H01L21/67115 , H01L21/67109 , H01L31/022425 , H01L31/068 , H01L31/0684 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The present invention describes a method of manufacturing a semiconductor device, comprising a semiconductor substrate in the shape of a slice, the method comprising the steps of: step 1) selectively applying a pattern of a solids-based dopant source to a first major surface of said semiconducting substrate; step 2) diffusing the dopant atoms from said solids-based dopant source into said substrate by a controlled heat treatment step in a gaseous environment surrounding said semi-conducting substrate, the dopant from said solids-based dopant source diffusing directly into said substrate to form a first diffusion region and, at the same time, diffusing said dopant from said solids-based dopant source indirectly via said gaseous environment into said substrate to form a second diffusion region in at least some areas of said substrate to form a second diffusion region in at least some areas of said substrate not covered by said pattern; and step 3) forming a metal contact pattern substantially in alignment with said first diffusion region without having etched said second diffusion region substantially.
摘要翻译：本发明描述了一种半导体器件的制造方法，包括半导体衬底形状，该方法包括以下步骤：步骤1）选择性地将基于固体的掺杂剂源的图案施加到第一主表面所述半导体衬底; 步骤2）通过在围绕所述半导体衬底的气态环境中的受控热处理步骤将掺杂剂原子从所述基于固体的掺杂剂源扩散到所述衬底中，所述基于固体的掺杂剂源的掺杂剂直接扩散到所述衬底中以形成第一扩散区域，并且同时将所述掺杂剂从所述基于固体的掺杂剂源经由所述气态环境扩散到所述衬底中，以在所述衬底的至少一些区域中形成第二扩散区域，以形成第二扩散区域所述衬底的至少一些区域不被所述图案覆盖; 和步骤3）形成基本上与所述第一扩散区域对准的金属接触图案，而基本上没有蚀刻所述第二扩散区域。

3. 发明授权

US06251756B1 Furnace for continuous, high throughput diffusion processes from various diffusion sources 有权
标题翻译：用于来自各种扩散源的连续，高通量扩散过程的炉
公开(公告)号：US06251756B1
公开(公告)日：2001-06-26
申请号：US09614643
申请日：2000-07-12
申请人： Jörg Horzel , Jozef Szlufcik , Johan Nijs
发明人： Jörg Horzel , Jozef Szlufcik , Johan Nijs
IPC分类号： H01L2104
CPC分类号： H01L21/67173 , H01L21/67109 , H01L21/67115 , H01L21/67236 , Y10S438/907
摘要： An open apparatus is described for the processing of planar thin semiconductor substrates, particularly for the processing of solar cells. The apparatus includes a first zone for the drying and burn-out of organic components from solid or liquid based dopant sources pre-applied to the substrates. The zone is isolated from the remaining zones of the apparatus by an isolating section to prevent cross-contamination between burn-out zone and the remaining processing zones. All the zones of the apparatus may be formed from a quartz tube around which heaters are placed for raising the temperature inside the quartz tube. Each zone may be purged with a suitable mixture of gases, e.g. inert gases such as argon, as well as oxygen and nitrogen. The zones may also be provided with gaseous dopants such as POCl3 and the present invention includes the sequential diffusion of more than one dopant into the substrates. Some of the zones may be used for driving-in the dopants alternatively, for other processes, e.g. oxidation. The present invention also includes a method of operating the apparatus and the use of the apparatus in processing solar cells.
摘要翻译：描述了用于处理平面薄型半导体衬底，特别是用于太阳能电池的处理的开放式设备。该装置包括用于从预先施加到基底的固体或液体基础的掺杂剂源干燥和燃尽有机成分的第一区域。该区域通过隔离部分与设备的其余区域隔离，以防止燃尽区域和其余处理区域之间的交叉污染。设备的所有区域可以由石英管形成，在该石英管周围放置加热器以提高石英管内部的温度。每个区域可以用合适的气体混合物吹扫，例如，惰性气体如氩气，以及氧气和氮气。这些区域还可以设置有气体掺杂剂例如POCl 3，本发明包括多于一种掺杂剂顺序扩散到衬底中。一些区域可以用于驱动掺杂剂，或者用于其它工艺，例如，氧化。本发明还包括操作该装置的方法以及该装置在处理太阳能电池中的用途。

4. 发明授权

US06384317B1 Solar cell and process of manufacturing the same 有权
标题翻译：太阳能电池和制造过程相同
公开(公告)号：US06384317B1
公开(公告)日：2002-05-07
申请号：US09445099
申请日：2000-04-03
申请人： Emmanuel Van Kerschaver , Jozef Szlufcik , Roland Einhaus , Johan Nijs
发明人： Emmanuel Van Kerschaver , Jozef Szlufcik , Roland Einhaus , Johan Nijs
IPC分类号： H01L310224
CPC分类号： H01L31/1804 , H01L31/02245 , H01L31/03529 , Y02E10/547 , Y02P70/521
摘要： The solar cell in the semiconductor substrate includes at least a radiation receiving front surface and a second surface. The substrate includes a first region of one type of conductivity and a second region of the opposite conductivity type with at least a first part located adjacent to the front surface and a second part located adjacent to the second surface. The front surface includes conductive contacts to the second region and the second surface has separated contacts to the first region and to the second region. The contacts to the second region at the second surface are connected to the contacts at the front surface through a limited number of vias.
摘要翻译：半导体衬底中的太阳能电池至少包括辐射接收前表面和第二表面。衬底包括一种导电类型的第一区域和相反导电类型的第二区域，其中至少第一部分位于邻近前表面的第一部分和与第二表面相邻的第二部分。前表面包括到第二区域的导电触点，并且第二表面具有到第一区域和第二区域的分离的触点。在第二表面处的第二区域的触点通过有限数量的通孔连接到前表面上的触点。

5. 发明授权

US6117266A Furnace for continuous, high throughput diffusion processes from various diffusion sources 失效
标题翻译：用于来自各种扩散源的连续，高通量扩散过程的炉
公开(公告)号：US6117266A
公开(公告)日：2000-09-12
申请号：US64648
申请日：1998-04-22
申请人： Jorg Horzel , Jozef Szlufcik , Johan Nijs
发明人： Jorg Horzel , Jozef Szlufcik , Johan Nijs
IPC分类号： H01L21/00 , A23F1/02 , H05B3/02
CPC分类号： H01L21/67173 , H01L21/67109 , H01L21/67115 , H01L21/67236 , Y10S438/907
摘要： An open apparatus is described for the processing of planar thin semiconductor substrates, particularly for the processing of solar cells. The apparatus includes a first zone for the drying and burn-out of organic components from solid or liquid based dopant sources pre-applied to the substrates. The zone is isolated from the remaining zones of the apparatus by an isolating section to prevent cross-contamination between burn-out zone and the remaining processing zones. All the zones of the apparatus may be formed from a quartz tube around which heaters are placed for raising the temperature inside the quartz tube. Each zone may be purged with a suitable mixture of gases, e.g. inert gases such as argon, as well as oxygen and nitrogen. The zones may also be provided with gaseous dopants such as POCl.sub.3 and the present invention includes the sequential diffusion of more than one dopant into the substrates. Some of the zones may be used for driving-in the dopants alternatively, for other processes, e.g. oxidation. The present invention also includes a method of operating the apparatus and the use of the apparatus in processing solar cells.
摘要翻译：描述了用于处理平面薄型半导体衬底，特别是用于太阳能电池的处理的开放式设备。该装置包括用于从预先施加到基底的固体或液体基础的掺杂剂源干燥和燃尽有机成分的第一区域。该区域通过隔离部分与设备的其余区域隔离，以防止燃尽区域和其余处理区域之间的交叉污染。设备的所有区域可以由石英管形成，在该石英管周围放置加热器以提高石英管内的温度。每个区域可以用合适的气体混合物吹扫，例如，惰性气体如氩气，以及氧气和氮气。这些区域还可以设置有气体掺杂剂例如POCl 3，本发明包括多于一种掺杂剂顺序扩散到衬底中。一些区域可以用于驱动掺杂剂，或者用于其它工艺，例如，氧化。本发明还包括操作该装置的方法以及该装置在处理太阳能电池中的用途。

6. 再颁专利

USRE37512E1 Method of preparing solar cell front contacts 有权
标题翻译：制备太阳能电池前触点的方法
公开(公告)号：USRE37512E1
公开(公告)日：2002-01-15
申请号：US09525334
申请日：2000-03-10
申请人： Jozef Szlufcik , Johan Nijs , Roland Jozef Fick
发明人： Jozef Szlufcik , Johan Nijs , Roland Jozef Fick
IPC分类号： H01L3118
CPC分类号： H01L31/18 , H01L31/022425 , Y02E10/50
摘要： Method of preparing on a solar cell the top contact pattern which consists of a set of parallel narrow finger lines and wide collector lines deposited essentially at right angles to the finger lines on the semiconductor substrate, characterized in that it comprises at least the following steps: (a) screen printing and drying the set of contact finger lines; (b) printing and drying the wide collector lines on the top of the set of finger lines in a subsequent step; (c) firing both finger lines and collector lines in a single final step in order to form an ohmic contact between the finger lines and the semiconductor substrate and between the finger lines and the wide collector lines.
摘要翻译：在太阳能电池上制备顶部接触图案的方法，该顶部接触图案由基本上与半导体衬底上的指线成直角淀积的一组平行的窄指线和宽集电极线组成，其特征在于，其至少包括以下步骤：（a）丝网印刷和干燥一组接触指纹线;（b）在随后的步骤中印刷和干燥该组指纹的顶部上的宽收集线;（c）在单个最终步骤，以便在指状线和半导体衬底之间以及指状线和宽收集线之间形成欧姆接触。

7. 发明授权

US5726065A Method of preparing solar cell front contacts 失效
标题翻译：制备太阳能电池前触点的方法
公开(公告)号：US5726065A
公开(公告)日：1998-03-10
申请号：US604666
申请日：1996-02-21
申请人： Jozef Szlufcik , Johan Nijs , Roland Jozef Fick
发明人： Jozef Szlufcik , Johan Nijs , Roland Jozef Fick
IPC分类号： H01L31/04 , H01L31/0224 , H01L31/18
CPC分类号： H01L31/022425 , Y02E10/50
摘要： Method of preparing on a solar cell the top contact pattern which consists of a set of parallel narrow finger lines and wide collector lines deposited essentially at right angles to the finger lines on the semiconductor substrate, characterized in that it comprises at least the following steps: (a) screen printing and drying the set of contact finger lines; (b) printing and drying the wide collector lines on the top of the set of finger lines in a subsequent step; (c) firing both finger lines and collector lines in a single final step in order to form an ohmic contact between the finger lines and the semiconductor substrate and between the finger lines and the wide collector lines.
摘要翻译：在太阳能电池上制备顶部接触图案的方法，该顶部接触图案由基本上与半导体衬底上的指线成直角淀积的一组平行的窄指线和宽集电极线组成，其特征在于，其至少包括以下步骤：（a）丝网印刷和干燥该组接触指纹线; （b）在随后的步骤中打印和干燥该组指纹顶部的宽收集线; （c）在单个最后的步骤中烧制指纹线和收集线，以便在指状线和半导体衬底之间以及指状线和宽收集线之间形成欧姆接触。

8. 发明授权

US5108936A Method of producing a bipolar transistor having an amorphous emitter formed by plasma CVD 失效
标题翻译：生产具有通过等离子体CVD形成的无定形发射体的双极晶体管的方法
公开(公告)号：US5108936A
公开(公告)日：1992-04-28
申请号：US704674
申请日：1991-05-21
申请人： Moustafa Y. Ghannam , Robert Mertens , Johan Nijs
发明人： Moustafa Y. Ghannam , Robert Mertens , Johan Nijs
IPC分类号： H01L29/80 , H01L21/205 , H01L21/331 , H01L29/04 , H01L29/08 , H01L29/73 , H01L29/737
CPC分类号： H01L29/66242 , H01L21/02381 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L29/04 , H01L29/0817 , H01L29/73 , H01L29/7375 , Y10S148/011
摘要： A bipolar hetero-junction transistor has an emitter formed which consists of doped and hydrogenated semiconductor material which is at least partly in amorphous form. A high current gain (.beta.) is obtained due to the wide bandgap in the emitter material. Preferably, the layer forming the emitter consists of microcrystalline silicon which is doped and hydrogenated. This yields a small base resistance which is preferable for high frequency purposes. The amorphous bipolar hetero-junction transistor can be produced by a CVD-technique, by using a plasma or by photodissociation. The transistor having a microcrystalline emitter layer can be produced by one of the above methods or by heating an amorphous emitter layer.
摘要翻译：双极异质结晶体管具有形成的发射极，其由至少部分为无定形形式的掺杂和氢化半导体材料组成。由于发射极材料中的宽带隙，可获得高电流增益（β）。优选地，形成发射极的层由掺杂和氢化的微晶硅组成。这产生小的耐碱性，这对于高频目的是优选的。非晶双极异质结晶体管可以通过CVD技术，通过使用等离子体或通过光解作用来制造。具有微晶发射极层的晶体管可以通过上述方法之一或通过加热非晶体发射极层来制造。

9. 发明授权

US06815247B2 Thin-film opto-electronic device and a method of making it 有权
标题翻译：薄膜光电器件及其制作方法
公开(公告)号：US06815247B2
公开(公告)日：2004-11-09
申请号：US10644690
申请日：2003-08-19
申请人： Lieven Stalmans , Jef Poortmans , Matty Caymax , Khalid Said , Johan Nijs
发明人： Lieven Stalmans , Jef Poortmans , Matty Caymax , Khalid Said , Johan Nijs
IPC分类号： H01L2100
CPC分类号： H01L31/1804 , H01L31/028 , H01L31/0547 , H01L31/056 , H01L31/068 , H01L31/072 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： A thin-film opto-electronic device on a conductive silicon-containing substrate includes a sequence of layers. The layers include a layer of a porous medium preferably a porous silicon, on a substrate. The porous layer has both light diffusing and light reflecting properties. In addition, a non-porous layer is located on said porous silicon layer, with at least one first region and at least one second region being in said non-porous layer. The first region is of a first conductivity type acting as a light absorber and the second region has a conductivity of a second type, different from said first conductivity type. The sequence of layers is such that optical confinement is realised in the device.
摘要翻译：导电含硅衬底上的薄膜光电器件包括一系列层。层在衬底上包括多孔介质层，优选多孔硅层。多孔层具有光漫射和光反射性质。此外，无孔层位于所述多孔硅层上，其中至少一个第一区域和至少一个第二区域位于所述无孔层中。第一区域是用作光吸收体的第一导电类型，第二区域具有与所述第一导电类型不同的第二类型的导电率。层的顺序使得在装置中实现光限制。

10. 发明授权

US06683367B1 Thin-film opto-electronic device and a method of making it 有权
标题翻译：薄膜光电器件及其制作方法
公开(公告)号：US06683367B1
公开(公告)日：2004-01-27
申请号：US09743076
申请日：2001-04-09
申请人： Lieven Stalmans , Jef Poortmans , Matty Caymax , Khalid Said , Johan Nijs
发明人： Lieven Stalmans , Jef Poortmans , Matty Caymax , Khalid Said , Johan Nijs
IPC分类号： H01L2906
CPC分类号： H01L31/1804 , H01L31/028 , H01L31/0547 , H01L31/056 , H01L31/068 , H01L31/072 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： The present invention is related to a thin-film opto-electronic device and a method of fabricating the same. Particularly this thin film opto-electronic device is fabricated on a Si-containing substrate. The thin-film material is a crystalline semiconductor material. In order to increase the efficiency of this device a porous silicon layer is applied between the thin-film and the substrate. This porous silicon layer has both light reflecting and light diffusing properties thereby giving rise to light confinement in the thin-film.
摘要翻译：本发明涉及一种薄膜光电器件及其制造方法。特别地，这种薄膜光电器件制造在含Si衬底上。薄膜材料是结晶半导体材料。为了提高该器件的效率，在薄膜和衬底之间施加多孔硅层。该多孔硅层具有光反射和光漫射特性，从而在薄膜中产生光限制。

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