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    • 4. 发明授权
    • Furnace for continuous, high throughput diffusion processes from various
diffusion sources
    • 用于来自各种扩散源的连续,高通量扩散过程的炉
    • US6117266A
    • 2000-09-12
    • US64648
    • 1998-04-22
    • Jorg HorzelJozef SzlufcikJohan Nijs
    • Jorg HorzelJozef SzlufcikJohan Nijs
    • H01L21/00A23F1/02H05B3/02
    • H01L21/67173H01L21/67109H01L21/67115H01L21/67236Y10S438/907
    • An open apparatus is described for the processing of planar thin semiconductor substrates, particularly for the processing of solar cells. The apparatus includes a first zone for the drying and burn-out of organic components from solid or liquid based dopant sources pre-applied to the substrates. The zone is isolated from the remaining zones of the apparatus by an isolating section to prevent cross-contamination between burn-out zone and the remaining processing zones. All the zones of the apparatus may be formed from a quartz tube around which heaters are placed for raising the temperature inside the quartz tube. Each zone may be purged with a suitable mixture of gases, e.g. inert gases such as argon, as well as oxygen and nitrogen. The zones may also be provided with gaseous dopants such as POCl.sub.3 and the present invention includes the sequential diffusion of more than one dopant into the substrates. Some of the zones may be used for driving-in the dopants alternatively, for other processes, e.g. oxidation. The present invention also includes a method of operating the apparatus and the use of the apparatus in processing solar cells.
    • 描述了用于处理平面薄型半导体衬底,特别是用于太阳能电池的处理的开放式设备。 该装置包括用于从预先施加到基底的固体或液体基础的掺杂剂源干燥和燃尽有机成分的第一区域。 该区域通过隔离部分与设备的其余区域隔离,以防止燃尽区域和其余处理区域之间的交叉污染。 设备的所有区域可以由石英管形成,在该石英管周围放置加热器以提高石英管内的温度。 每个区域可以用合适的气体混合物吹扫,例如, 惰性气体如氩气,以及氧气和氮气。 这些区域还可以设置有气体掺杂剂例如POCl 3,本发明包括多于一种掺杂剂顺序扩散到衬底中。 一些区域可以用于驱动掺杂剂,或者用于其它工艺,例如, 氧化。 本发明还包括操作该装置的方法以及该装置在处理太阳能电池中的用途。
    • 6. 发明申请
    • PHOTOVOLTAIC CELLS HAVING METAL WRAP THROUGH AND IMPROVED PASSIVATION
    • 具有金属带的光伏电池通过并改善了钝化
    • US20110005582A1
    • 2011-01-13
    • US12792624
    • 2010-06-02
    • Jozef SzlufcikChristophe AllebeFrederic DrossGuy Baucarne
    • Jozef SzlufcikChristophe AllebeFrederic DrossGuy Baucarne
    • H01L31/04H01L31/18
    • H01L31/1804H01L31/0224H01L31/022425H01L31/022441H01L31/02245Y02E10/547Y02P70/521
    • A photovoltaic device is disclosed. In one aspect, the device is formed in a semiconductor substrate. It has a radiation receiving front surface and a rear surface. The device may have a first region of one conductivity type, a second region with the opposite conductivity type adjacent to the front surface, and an antireflection layer. The rear surface is covered by a dielectric layer covering also an inside surface of the via. The front surface has current collecting conductive contacts. The rear surface has conductive contacts extending through the dielectric. A conductive path is in the via for photogenerated current from the front surface. By having the dielectric all over, no aligning and masking is needed. The same dielectric serves to insulate, provide thermal protection, and helps in surface and bulk passivation. It also avoids the need for a junction region near the via, hence reducing unwanted recombination currents.
    • 公开了一种光电器件。 在一个方面中,器件形成在半导体衬底中。 它具有辐射接收前表面和后表面。 该器件可以具有一种导电类型的第一区域,具有与前表面相邻的相反导电类型的第二区域和抗反射层。 后表面被也覆盖通孔内表面的电介质层覆盖。 前表面具有集流导电触点。 后表面具有延伸穿过电介质的导电触点。 导电路径在通孔中,用于来自前表面的光生电流。 通过使电介质全部结束,不需要对准和掩蔽。 相同的电介质用于绝缘,提供热保护,并有助于表面和体积钝化。 它也避免了需要靠近通孔的结区域,从而减少不必要的复合电流。
    • 7. 发明申请
    • Method for backside surface passivation of solar cells and solar cells with such passivation
    • 太阳能电池和太阳能电池背面钝化方法
    • US20050022863A1
    • 2005-02-03
    • US10871531
    • 2004-06-17
    • Guido AgostinelliJozef SzlufcikPetko VitanovAntoaneta Harizanova
    • Guido AgostinelliJozef SzlufcikPetko VitanovAntoaneta Harizanova
    • H01L31/00H01L31/18
    • H01L31/1868H01L31/02167Y02E10/50Y02P70/521Y10T428/31678
    • The present invention provides a method for dielectric passivating the surface of a solar cell by accumulation of negative fixed charges of a first type at the interface between semiconductor material and a passivating material. According to the invention the passivating material comprises an oxide system, for example a binary oxide system, comprising Al2O3 and at least one metal oxide or metalloid oxide which enhances the tetrahedral structure of Al2O3, for example, an (Al2O3)x(TiO2)1-x alloy. In this way it is possible to combine the desirable properties from at least two different oxides, while eliminating the undesirable properties of each individual material. The oxide system can be deposited onto the semiconductor surface by means of a sol-gel method, comprising the steps of formation of the metal oxide and/or metalloid oxide sol and the aluminum solution and then carefully mixing these together under stirring and ultrasonic treatment. Thin films of the oxide system can then be deposited onto the semiconductor surface by means of spin coating followed by a temperature treatment.
    • 本发明提供一种通过在半导体材料和钝化材料之间的界面处堆积第一类型的负固定电荷来电介质钝化太阳能电池表面的方法。 根据本发明,钝化材料包括氧化物系统,例如二氧化碳系统,其包含Al 2 O 3和至少一种增强Al 2 O 3的四面体结构的金属氧化物或类金属氧化物,例如(Al 2 O 3)x(TiO 2)1 -x合金。 以这种方式,可以组合来自至少两种不同氧化物的期望性质,同时消除每种单独材料的不期望的性质。 可以通过溶胶 - 凝胶法将氧化物体系沉积在半导体表面上,包括形成金属氧化物和/或准金属氧化物溶胶和铝溶液,然后在搅拌和超声波处理下仔细地将它们混合在一起。 氧化物体系的薄膜随后通过旋涂然后进行温度处理而沉积到半导体表面上。
    • 8. 发明授权
    • Semiconductor device with selectively diffused regions
    • 具有选择性扩散区域的半导体器件
    • US06552414B1
    • 2003-04-22
    • US09331932
    • 1999-08-27
    • Jörg HorzelJozef SzlufcikMia HonoréJohan Nijs
    • Jörg HorzelJozef SzlufcikMia HonoréJohan Nijs
    • H01L29167
    • H01L21/67115H01L21/67109H01L31/022425H01L31/068H01L31/0684H01L31/1804Y02E10/547Y02P70/521
    • The present invention describes a method of manufacturing a semiconductor device, comprising a semiconductor substrate (2) in the shape of a slice, the method comprising the steps of: step 1) selectively applying a pattern of a solids-based dopant source to a first major surface of said semiconducting substrate (2); step 2) diffusing the dopant atoms from said solids-based dopant source into said substrate (2) by a controlled heat treatment step in a gaseous environment surrounding said semi-conducting substrate (2), the dopant from said solids-based dopant source diffusing directly into said substrate (2) to form a first diffusion region (12) and, at the time, diffusing said dopant from said solids-based dopant source indirectly via said gaseous environment into said substrate (2) to form a second diffusion region (15) in at least some areas of said substrate (2) not covered by said pattern; and step 3) forming a metal contact pattern (20) substantially in alignment with said first diffusion region (12) without having etched said second diffusion region (15) substantially.
    • 本发明描述了一种制造半导体器件的方法,包括半导体衬底(2),其形状为切片,该方法包括以下步骤:步骤1)选择性地将基于固体的掺杂剂源的图案施加到第一 所述半导体衬底(2)的主表面; 步骤2)通过在围绕所述半导体衬底(2)的气态环境中的受控热处理步骤将掺杂剂原子从所述基于固体的掺杂剂源扩散到所述衬底(2)中,所述基于固体的掺杂剂源扩散 直接进入所述衬底(2)以形成第一扩散区(12),并且此时将所述掺杂剂从所述固体基掺杂剂源经由所述气态环境间接扩散到所述衬底(2)中以形成第二扩散区( 15)在所述衬底(2)的至少一些未被所述图案覆盖的区域中; 和步骤3)形成基本上与所述第一扩散区域(12)对准的金属接触图案(20),而没有基本上蚀刻所述第二扩散区域(15)。
    • 9. 发明授权
    • Photovoltaic cells having metal wrap through and improved passivation
    • 具有金属包裹和改善钝化的光伏电池
    • US09246044B2
    • 2016-01-26
    • US12792624
    • 2010-06-02
    • Jozef SzlufcikChristophe AllebeFrederic DrossGuy Beaucarne
    • Jozef SzlufcikChristophe AllebeFrederic DrossGuy Beaucarne
    • H01L31/04H01L31/18H01L31/0224
    • H01L31/1804H01L31/0224H01L31/022425H01L31/022441H01L31/02245Y02E10/547Y02P70/521
    • A photovoltaic device is disclosed. In one aspect, the device is formed in a semiconductor substrate. It has a radiation receiving front surface and a rear surface. The device may have a first region of one conductivity type, a second region with the opposite conductivity type adjacent to the front surface, and an antireflection layer. The rear surface is covered by a dielectric layer covering also an inside surface of the via. The front surface has current collecting conductive contacts. The rear surface has conductive contacts extending through the dielectric. A conductive path is in the via for photogenerated current from the front surface. By having the dielectric all over, no aligning and masking is needed. The same dielectric serves to insulate, provide thermal protection, and helps in surface and bulk passivation. It also avoids the need for a junction region near the via, hence reducing unwanted recombination currents.
    • 公开了一种光电器件。 在一个方面中,器件形成在半导体衬底中。 它具有辐射接收前表面和后表面。 该器件可以具有一种导电类型的第一区域,具有与前表面相邻的相反导电类型的第二区域和抗反射层。 后表面被也覆盖通孔内表面的电介质层覆盖。 前表面具有集流导电触点。 后表面具有延伸穿过电介质的导电触点。 导电路径在通孔中,用于来自前表面的光生电流。 通过使电介质全部结束,不需要对准和掩蔽。 相同的电介质用于绝缘,提供热保护,并有助于表面和体积钝化。 它也避免了需要靠近通孔的结区域,从而减少不必要的复合电流。
    • 10. 发明授权
    • Method for backside surface passivation of solar cells and solar cells with such passivation
    • 太阳能电池和太阳能电池背面钝化方法
    • US07659475B2
    • 2010-02-09
    • US10871531
    • 2004-06-17
    • Guido AgostinelliJozef SzlufcikPetko VitanovAntoaneta Harizanova
    • Guido AgostinelliJozef SzlufcikPetko VitanovAntoaneta Harizanova
    • H01L31/00
    • H01L31/1868H01L31/02167Y02E10/50Y02P70/521Y10T428/31678
    • The present invention provides a method for dielectric passivating the surface of a solar cell by accumulation of negative fixed charges of a first type at the interface between semiconductor material and a passivating material. According to the invention the passivating material comprises an oxide system, for example a binary oxide system, comprising Al2O3 and at least one metal oxide or metalloid oxide which enhances the tetrahedral structure of Al2O3, for example, an (Al2O3)x(TiO2)1-x alloy. In this way it is possible to combine the desirable properties from at least two different oxides, while eliminating the undesirable properties of each individual material. The oxide system can be deposited onto the semiconductor surface by means of a sol-gel method, comprising the steps of formation of the metal oxide and/or metalloid oxide sol and the aluminum solution and then carefully mixing these together under stirring and ultrasonic treatment. Thin films of the oxide system can then be deposited onto the semiconductor surface by means of spin coating followed by a temperature treatment.
    • 本发明提供一种通过在半导体材料和钝化材料之间的界面处堆积第一类型的负固定电荷来电介质钝化太阳能电池表面的方法。 根据本发明,钝化材料包括氧化物系统,例如二氧化物系统,其包含Al 2 O 3和至少一种增强Al 2 O 3的四面体结构的金属氧化物或类金属氧化物,例如(Al 2 O 3)x(TiO 2)1 -x合金。 以这种方式,可以组合来自至少两种不同氧化物的期望性质,同时消除每种单独材料的不期望的性质。 可以通过溶胶 - 凝胶法将氧化物体系沉积在半导体表面上,包括形成金属氧化物和/或准金属氧化物溶胶和铝溶液,然后在搅拌和超声波处理下仔细地将它们混合在一起。 氧化物体系的薄膜随后通过旋涂然后进行温度处理而沉积到半导体表面上。