专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08481419B2 Method for producing a metal contact on a coated semiconductor substrate 失效
标题翻译：在涂覆的半导体衬底上制造金属接触的方法
公开(公告)号：US08481419B2
公开(公告)日：2013-07-09
申请号：US13125815
申请日：2009-11-26
申请人： Jorg Horzel , Gunnar Schubert , Stefan Dauwe , Peter Roth , Tobias Droste , Wilfried Schmidt , Ingrid Ernst
发明人： Jorg Horzel , Gunnar Schubert , Stefan Dauwe , Peter Roth , Tobias Droste , Wilfried Schmidt , Ingrid Ernst
IPC分类号： H01L21/4763
CPC分类号： H01L31/022425 , H01L31/068 , Y02E10/547
摘要： A method for producing an electrically conducting metal contact on a semiconductor component having a coating on the surface of a semiconductor substrate. In order to keep transfer resistances low while maintaining good mechanical strength, the invention proposes applying a particle-containing fluid onto the coating, where the particles contain at least metal particles and glass frits, curing the fluid while simultaneously forming metal areas in the substrate through heat treatment, removing the cured fluid and the areas of the coating covered by the fluid, and depositing, for the purposes of forming the contact without using intermediate layers, electrically conducting material from a solution onto areas of the semiconductor component in which the coating is removed while at the same time conductively connecting the metal areas present in said areas on the substrate.
摘要翻译：一种在半导体元件上制造导电金属接触的方法，该半导体元件在半导体衬底的表面上具有涂层。为了保持转印阻力低，同时保持良好的机械强度，本发明提出将含颗粒的流体施加到涂层上，其中颗粒至少含有金属颗粒和玻璃料，固化流体同时在基板中形成金属区域，通过热处理，去除固化的流体和被流体覆盖的涂层的区域，并且为了形成接触而不使用中间层，沉积，将导电材料从溶液导电到半导体组件的其中涂层是同时导电地连接存在于基板上的所述区域中的金属区域。

2. 发明申请

US20110201196A1 METHOD FOR PRODUCING A METAL CONTACT ON A SEMICONDUCTOR SUBSTRATE PROVIDED WITH A COATING 失效
标题翻译：在用涂料提供的半导体衬底上生产金属接触的方法
公开(公告)号：US20110201196A1
公开(公告)日：2011-08-18
申请号：US13125815
申请日：2009-11-26
申请人： Jorg Horzel , Gunnar Schubert , Stefan Dauwe , Peter Roth , Tobias Droste , Wilfried Schmidt , Ingrid Ernst
发明人： Jorg Horzel , Gunnar Schubert , Stefan Dauwe , Peter Roth , Tobias Droste , Wilfried Schmidt , Ingrid Ernst
IPC分类号： H01L21/288
CPC分类号： H01L31/022425 , H01L31/068 , Y02E10/547
摘要： A method for producing an electrically conducting metal contact on a semiconductor component having a coating on the surface of a semiconductor substrate. In order to keep transfer resistances low while maintaining good mechanical strength, the invention proposes applying a particle-containing fluid onto the coating, where the particles contain at least metal particles and glass frits, curing the fluid while simultaneously forming metal areas in the substrate through heat treatment, removing the cured fluid and the areas of the coating covered by the fluid, and depositing, for the purposes of forming the contact without using intermediate layers, electrically conducting material from a solution onto areas of the semiconductor component in which the coating is removed while at the same time conductively connecting the metal areas present in said areas on the substrate.
摘要翻译：一种在具有在半导体衬底的表面上具有涂层的半导体部件上制造导电金属接触的方法。为了保持转印阻力低，同时保持良好的机械强度，本发明提出将含颗粒的流体施加到涂层上，其中颗粒至少含有金属颗粒和玻璃料，固化流体同时在基板中形成金属区域，通过热处理，去除固化的流体和被流体覆盖的涂层的区域，并且为了形成接触而不使用中间层，沉积，将导电材料从溶液导电到半导体组件的其中涂层是同时导电地连接存在于基板上的所述区域中的金属区域。

3. 发明授权

US6117266A Furnace for continuous, high throughput diffusion processes from various diffusion sources 失效
标题翻译：用于来自各种扩散源的连续，高通量扩散过程的炉
公开(公告)号：US6117266A
公开(公告)日：2000-09-12
申请号：US64648
申请日：1998-04-22
申请人： Jorg Horzel , Jozef Szlufcik , Johan Nijs
发明人： Jorg Horzel , Jozef Szlufcik , Johan Nijs
IPC分类号： H01L21/00 , A23F1/02 , H05B3/02
CPC分类号： H01L21/67173 , H01L21/67109 , H01L21/67115 , H01L21/67236 , Y10S438/907
摘要： An open apparatus is described for the processing of planar thin semiconductor substrates, particularly for the processing of solar cells. The apparatus includes a first zone for the drying and burn-out of organic components from solid or liquid based dopant sources pre-applied to the substrates. The zone is isolated from the remaining zones of the apparatus by an isolating section to prevent cross-contamination between burn-out zone and the remaining processing zones. All the zones of the apparatus may be formed from a quartz tube around which heaters are placed for raising the temperature inside the quartz tube. Each zone may be purged with a suitable mixture of gases, e.g. inert gases such as argon, as well as oxygen and nitrogen. The zones may also be provided with gaseous dopants such as POCl.sub.3 and the present invention includes the sequential diffusion of more than one dopant into the substrates. Some of the zones may be used for driving-in the dopants alternatively, for other processes, e.g. oxidation. The present invention also includes a method of operating the apparatus and the use of the apparatus in processing solar cells.
摘要翻译：描述了用于处理平面薄型半导体衬底，特别是用于太阳能电池的处理的开放式设备。该装置包括用于从预先施加到基底的固体或液体基础的掺杂剂源干燥和燃尽有机成分的第一区域。该区域通过隔离部分与设备的其余区域隔离，以防止燃尽区域和其余处理区域之间的交叉污染。设备的所有区域可以由石英管形成，在该石英管周围放置加热器以提高石英管内的温度。每个区域可以用合适的气体混合物吹扫，例如，惰性气体如氩气，以及氧气和氮气。这些区域还可以设置有气体掺杂剂例如POCl 3，本发明包括多于一种掺杂剂顺序扩散到衬底中。一些区域可以用于驱动掺杂剂，或者用于其它工艺，例如，氧化。本发明还包括操作该装置的方法以及该装置在处理太阳能电池中的用途。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式