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1. 发明授权

US09678020B2 Apparatus and method for inspection of substrate defect 有权
公开(公告)号：US09678020B2
公开(公告)日：2017-06-13
申请号：US14795396
申请日：2015-07-09
申请人： Joon-Seo Song , Woo-seok Ko , Ji-Young Shin , Seong-Jin Yun , Yu-Sin Yang , Sang-Kil Lee , Chung-Sam Jun
发明人： Joon-Seo Song , Woo-seok Ko , Ji-Young Shin , Seong-Jin Yun , Yu-Sin Yang , Sang-Kil Lee , Chung-Sam Jun
IPC分类号： G01N21/95 , G01N21/88 , G01N21/956
CPC分类号： G01N21/9505 , G01N21/8806 , G01N21/9501 , G01N21/95692 , G01N2201/061
摘要： Example embodiments relate to an apparatus and method for inspecting a substrate defect. The substrate defect inspecting apparatus includes a substrate, a light source emitting an infrared beam to the substrate, a detector detecting the infrared beam reflected from the substrate, and a defect analyzer receiving first information and second information from the detector and analyzing defects existing in the substrate. According to at least one example embodiment, the second information is acquired during a later process than the first information.

2. 发明授权

US07446865B2 Method of classifying defects 有权
标题翻译：分类缺陷的方法
公开(公告)号：US07446865B2
公开(公告)日：2008-11-04
申请号：US11421019
申请日：2006-05-30
申请人： Ki-Suk Chung , Chung-Sam Jun , Yu-Sin Yang , Byung-Sug Lee , Ji-Young Shin , Tae-Sung Kim
发明人： Ki-Suk Chung , Chung-Sam Jun , Yu-Sin Yang , Byung-Sug Lee , Ji-Young Shin , Tae-Sung Kim
IPC分类号： G01N21/00
CPC分类号： G06T7/0004
摘要： A method of classifying defects of an object includes irradiating multi-wavelength light onto the object, splitting light reflected from the object into light beams, each of the light beams having different wavelengths, obtaining image information of the object based on each of the light beams, forming a characteristic matrix that represent the wavelengths and the image information, and analyzing the characteristic matrix to determine types of the defects on the object. Thus, the defects may be accurately classified using a difference between reactivity of each of the defects in accordance with variations of the wavelengths and inspection conditions.
摘要翻译：对物体的缺陷进行分类的方法包括将多波长光照射到物体上，将从物体反射的光分成光束，每个光束具有不同的波长，基于每个光束获得物体的图像信息，形成表示波长和图像信息的特征矩阵，并且分析特征矩阵以确定对象上的缺陷的类型。因此，可以使用根据波长的变化和检查条件的每个缺陷的反应性之间的差异来精确地分类缺陷。

3. 发明授权

US08546154B2 Apparatus and method to inspect defect of semiconductor device 失效
标题翻译：检测半导体器件缺陷的装置和方法
公开(公告)号：US08546154B2
公开(公告)日：2013-10-01
申请号：US13226757
申请日：2011-09-07
申请人： Ji-Young Shin , Young-Nam Kim , Jong-An Kim , Hyung-Suk Cho , Yu-Sin Yang
发明人： Ji-Young Shin , Young-Nam Kim , Jong-An Kim , Hyung-Suk Cho , Yu-Sin Yang
IPC分类号： G01R31/36 , H01L21/66
CPC分类号： H01J37/241 , H01J37/265 , H01J37/28 , H01L22/12
摘要： An apparatus and method to inspect a defect of a substrate. Since a recess of an under layer of a substrate is darker than a projection of a top layer, a ratio of a value of a secondary electron signal (of an SEM) of the under layer to a value of the top layer may be increased to improve a pattern image used to inspect an under layer defect. Several conditions under which electron beams are irradiated may be set, and the pattern may be scanned under such conditions. Secondary electron signals may be generated according to the conditions and converted into image data to display various pattern images. Scan information on the images may be stored with positional information on the substrate. Each of scan information on the pattern images may be calculated to generate a new integrated image.
摘要翻译：检查基板缺陷的装置和方法。由于衬底的底层的凹部比顶层的突起更暗，所以下层的二次电子信号（SEM）的值与顶层的值的比可以增加到改善用于检查下层缺陷的图案图像。可以设置照射电子束的几个条件，并且可以在这种条件下扫描图案。可以根据条件生成二次电子信号，并将其转换为图像数据以显示各种图案图像。关于图像的扫描信息可以与基板上的位置信息一起存储。可以计算关于图案图像的每个扫描信息以生成新的集成图像。

4. 发明授权

US07804591B2 Wafer inspecting method 有权
标题翻译：晶圆检查方法
公开(公告)号：US07804591B2
公开(公告)日：2010-09-28
申请号：US11693356
申请日：2007-03-29
申请人： Ji-Hye Kim , Yu-Sin Yang , Jong-An Kim , Moon-Shik Kang , Ji-Young Shin
发明人： Ji-Hye Kim , Yu-Sin Yang , Jong-An Kim , Moon-Shik Kang , Ji-Young Shin
IPC分类号： G01N21/00
CPC分类号： G01N21/95607 , G01N21/9501 , G01N2021/8864 , G01N2021/8867 , G01N2021/8887
摘要： A wafer inspecting method including the steps of: multi-scanning a pattern image of a unit inspection region in a normal state and a pattern image of a unit inspection region to be inspected, respectively, using different inspection conditions; comparing the multi-scanned pattern images in the normal state with the multi-scanned pattern images to be inspected obtained by the same inspection conditions, and storing differences between the pattern images as difference images; generating a discrimination difference image by calculating a balance between the stored difference images; and discriminating a defect from noise by using the discrimination difference image.
摘要翻译：一种晶片检查方法，包括以下步骤：使用不同的检查条件分别对正常状态下的单位检查区域的图案图像和要检查的单位检查区域的图案图像进行多次扫描; 将正常状态下的多扫描图案图像与通过相同检查条件获得的待检查的多扫描图案图像进行比较，并且将图案图像之间的差异存储为差分图像; 通过计算所存储的差分图像之间的平衡来产生鉴别差异图像; 以及通过使用辨别差异图像来区分缺陷和噪声。

5. 发明授权

US08034640B2 Apparatus and method to inspect defect of semiconductor device 失效
标题翻译：检测半导体器件缺陷的装置和方法
公开(公告)号：US08034640B2
公开(公告)日：2011-10-11
申请号：US12627222
申请日：2009-11-30
申请人： Ji-Young Shin , Young-Nam Kim , Jong-An Kim , Hyung-Suk Cho , Yu-Sin Yang
发明人： Ji-Young Shin , Young-Nam Kim , Jong-An Kim , Hyung-Suk Cho , Yu-Sin Yang
IPC分类号： G01R31/26 , H01L21/66
CPC分类号： H01J37/241 , H01J37/265 , H01J37/28 , H01L22/12
摘要： An apparatus and method to inspect a defect of a semiconductor device. The amount of secondary electrons generated due to a scanning electron microscope (SEM) may depend on the topology of a pattern of a semiconductor substrate. The amount of secondary electrons emitted from a recess of an under layer is far smaller than that of secondary electrons emitted from a projection of a top layer. Since the recess is darker than the projection, a ratio of a value of a secondary electron signal of the under layer to a value of a secondary electron signal of the top layer may be increased in order to improve a pattern image used to inspect a defect in the under layer. To do this, a plurality of conditions under which electron beams (e-beams) are irradiated may be set, at least two may be selected out of the set conditions, and the pattern may be scanned under the selected conditions. Thus, secondary electron signals may be generated according to the respective conditions and converted into image data so that various pattern images may be displayed on a monitor. Scan information on the pattern images may be automatically stored in a computer storage along with positional information on a predetermined portion of the semiconductor substrate. When calculation conditions are input to a computer, each of scan information on the pattern images may be calculated to generate a new integrated pattern image.
摘要翻译：一种用于检查半导体器件的缺陷的装置和方法。由扫描电子显微镜（SEM）产生的二次电子量可能取决于半导体衬底图案的拓扑结构。从下层的凹部发射的二次电子的量远远小于从顶层的投影发射的二次电子的量。由于凹部比投影更暗，所以可以增加下层的二次电子信号的值与顶层的二次电子信号的值的比例，以便改善用于检查缺陷的图案图像在下层。为此，可以设置照射电子束（电子束）的多个条件，可以从设定条件中选择至少两个，并且可以在所选择的条件下扫描图案。因此，可以根据各自的条件生成二次电子信号，并将其转换为图像数据，从而可以在监视器上显示各种图案图像。关于图案图像的扫描信息可以与位于半导体基板的预定部分上的位置信息一起自动存储在计算机存储器中。当将计算条件输入到计算机时，可以计算每个关于图案图像的扫描信息，以生成新的集成图案图像。

6. 发明申请

US20080049219A1 WAFER INSPECTING METHOD 有权
标题翻译：波形检测方法
公开(公告)号：US20080049219A1
公开(公告)日：2008-02-28
申请号：US11693356
申请日：2007-03-29
申请人： Ji-Hye Kim , Yu-Sin Yang , Jong-An Kim , Moon-Shik Kang , Ji-Young Shin
发明人： Ji-Hye Kim , Yu-Sin Yang , Jong-An Kim , Moon-Shik Kang , Ji-Young Shin
IPC分类号： G01N21/00
CPC分类号： G01N21/95607 , G01N21/9501 , G01N2021/8864 , G01N2021/8867 , G01N2021/8887
摘要： A wafer inspecting method including the steps of: multi-scanning a pattern image of a unit inspection region in a normal state and a pattern image of a unit inspection region to be inspected, respectively, using different inspection conditions; comparing the multi-scanned pattern images in the normal state with the multi-scanned pattern images to be inspected obtained by the same inspection conditions, and storing differences between the pattern images as difference images; generating a discrimination difference image by calculating a balance between the stored difference images; and discriminating a defect from noise by using the discrimination difference image.
摘要翻译：一种晶片检查方法，包括以下步骤：使用不同的检查条件分别对正常状态下的单位检查区域的图案图像和要检查的单位检查区域的图案图像进行多次扫描; 将正常状态下的多扫描图案图像与通过相同检查条件获得的待检查的多扫描图案图像进行比较，并且将图案图像之间的差异存储为差分图像; 通过计算所存储的差分图像之间的平衡来产生鉴别差异图像; 以及通过使用辨别差异图像来区分缺陷和噪声。

7. 发明申请

US20070028771A1 Adsorption apparatus, semiconductor device manufacturing facility comprising the same, and method of recycling perfulorocompounds 审中-公开
标题翻译：吸附装置，包括该吸附装置的半导体装置制造设备以及循环使用方法
公开(公告)号：US20070028771A1
公开(公告)日：2007-02-08
申请号：US11498017
申请日：2006-08-03
申请人： Ji-Young Shin , Chung-Sam Jun , Kye-Weon Kim
发明人： Ji-Young Shin , Chung-Sam Jun , Kye-Weon Kim
IPC分类号： B01D53/02
CPC分类号： B01D53/70 , B01D53/04 , B01D53/0454 , B01D2253/102 , B01D2253/104 , B01D2253/106 , B01D2253/108 , B01D2256/26 , B01D2257/2066 , B01D2258/0216 , B01D2259/40083 , B01D2259/402 , Y02C20/30
摘要： PFC is recycled from a gas mixture using adsorption technology and techniques. Two adsorption units each include an adsorbent having a selectivity by which the PFC is selectively adsorbed with respect to the other gas(es) that make up the mixture. The gas mixture is selectively supplied to one of the first and second adsorption units and a condition is created in the first adsorption unit so that the PFC is adsorbed in the first adsorption unit. Once the adsorbent is saturated in the first adsorption unit, a condition is created in the first adsorption unit that causes the PFC to be desorbed. At this time, the gas mixture is selectively supplied to the second adsorption unit, and a condition is created in the second adsorption unit so that the PFC is adsorbed. Once the adsorbent is saturated in the second adsorption unit, a condition is created in the second adsorption unit that causes the PFC to be desorbed. High-purity PFC gas can be obtained from the exhaust gas even if the gas mixture is exhaust gas of a semiconductor device manufacturing process having a low concentration of PFC.
摘要翻译：使用吸附技术和技术，从气体混合物回收PFC。两个吸附单元各自包括具有选择性的吸附剂，通过该吸附剂相对于构成混合物的其它气体选择性地吸附PFC。气体混合物被选择性地供应到第一和第二吸附单元之一，并且在第一吸附单元中产生条件，使得PFC吸附在第一吸附单元中。一旦吸附剂在第一吸附单元中饱和，则在第一吸附单元中产生使PFC解吸的条件。此时，将气体混合物选择性地供给到第二吸附单元，并且在第二吸附单元中产生条件以使PFC被吸附。一旦吸附剂在第二吸附单元中饱和，则在引起PFC解吸的第二吸附单元中产生一个条件。即使气体混合物是具有低浓度PFC的半导体器件制造方法的废气，也可以从废气中获得高纯度PFC气体。

8. 外观设计

USD559201S1 Remote controller 有权
公开(公告)号：USD559201S1
公开(公告)日：2008-01-08
申请号：US29264271
申请日：2006-08-08
申请人： San-Hui Oh , Ji-Hyeong Lee , Soo-Hyun Lee , Ji-Young Shin , Kyu-Seok Kang , Hyun-Joo Sim
设计人： San-Hui Oh , Ji-Hyeong Lee , Soo-Hyun Lee , Ji-Young Shin , Kyu-Seok Kang , Hyun-Joo Sim

9. 外观设计

USD559202S1 Remote controller 有权
公开(公告)号：USD559202S1
公开(公告)日：2008-01-08
申请号：US29264286
申请日：2006-08-08
申请人： Hyun-Joo Sim , Ji-Hyeong Lee , Soo-Hyun Lee , Ji-Young Shin , Kyu-Seok Kang , San-Hui Oh
设计人： Hyun-Joo Sim , Ji-Hyeong Lee , Soo-Hyun Lee , Ji-Young Shin , Kyu-Seok Kang , San-Hui Oh

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