专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08034640B2 Apparatus and method to inspect defect of semiconductor device 失效
标题翻译：检测半导体器件缺陷的装置和方法
公开(公告)号：US08034640B2
公开(公告)日：2011-10-11
申请号：US12627222
申请日：2009-11-30
申请人： Ji-Young Shin , Young-Nam Kim , Jong-An Kim , Hyung-Suk Cho , Yu-Sin Yang
发明人： Ji-Young Shin , Young-Nam Kim , Jong-An Kim , Hyung-Suk Cho , Yu-Sin Yang
IPC分类号： G01R31/26 , H01L21/66
CPC分类号： H01J37/241 , H01J37/265 , H01J37/28 , H01L22/12
摘要： An apparatus and method to inspect a defect of a semiconductor device. The amount of secondary electrons generated due to a scanning electron microscope (SEM) may depend on the topology of a pattern of a semiconductor substrate. The amount of secondary electrons emitted from a recess of an under layer is far smaller than that of secondary electrons emitted from a projection of a top layer. Since the recess is darker than the projection, a ratio of a value of a secondary electron signal of the under layer to a value of a secondary electron signal of the top layer may be increased in order to improve a pattern image used to inspect a defect in the under layer. To do this, a plurality of conditions under which electron beams (e-beams) are irradiated may be set, at least two may be selected out of the set conditions, and the pattern may be scanned under the selected conditions. Thus, secondary electron signals may be generated according to the respective conditions and converted into image data so that various pattern images may be displayed on a monitor. Scan information on the pattern images may be automatically stored in a computer storage along with positional information on a predetermined portion of the semiconductor substrate. When calculation conditions are input to a computer, each of scan information on the pattern images may be calculated to generate a new integrated pattern image.
摘要翻译：一种用于检查半导体器件的缺陷的装置和方法。由扫描电子显微镜（SEM）产生的二次电子量可能取决于半导体衬底图案的拓扑结构。从下层的凹部发射的二次电子的量远远小于从顶层的投影发射的二次电子的量。由于凹部比投影更暗，所以可以增加下层的二次电子信号的值与顶层的二次电子信号的值的比例，以便改善用于检查缺陷的图案图像在下层。为此，可以设置照射电子束（电子束）的多个条件，可以从设定条件中选择至少两个，并且可以在所选择的条件下扫描图案。因此，可以根据各自的条件生成二次电子信号，并将其转换为图像数据，从而可以在监视器上显示各种图案图像。关于图案图像的扫描信息可以与位于半导体基板的预定部分上的位置信息一起自动存储在计算机存储器中。当将计算条件输入到计算机时，可以计算每个关于图案图像的扫描信息，以生成新的集成图案图像。

2. 发明授权

US08546154B2 Apparatus and method to inspect defect of semiconductor device 失效
标题翻译：检测半导体器件缺陷的装置和方法
公开(公告)号：US08546154B2
公开(公告)日：2013-10-01
申请号：US13226757
申请日：2011-09-07
申请人： Ji-Young Shin , Young-Nam Kim , Jong-An Kim , Hyung-Suk Cho , Yu-Sin Yang
发明人： Ji-Young Shin , Young-Nam Kim , Jong-An Kim , Hyung-Suk Cho , Yu-Sin Yang
IPC分类号： G01R31/36 , H01L21/66
CPC分类号： H01J37/241 , H01J37/265 , H01J37/28 , H01L22/12
摘要： An apparatus and method to inspect a defect of a substrate. Since a recess of an under layer of a substrate is darker than a projection of a top layer, a ratio of a value of a secondary electron signal (of an SEM) of the under layer to a value of the top layer may be increased to improve a pattern image used to inspect an under layer defect. Several conditions under which electron beams are irradiated may be set, and the pattern may be scanned under such conditions. Secondary electron signals may be generated according to the conditions and converted into image data to display various pattern images. Scan information on the images may be stored with positional information on the substrate. Each of scan information on the pattern images may be calculated to generate a new integrated image.
摘要翻译：检查基板缺陷的装置和方法。由于衬底的底层的凹部比顶层的突起更暗，所以下层的二次电子信号（SEM）的值与顶层的值的比可以增加到改善用于检查下层缺陷的图案图像。可以设置照射电子束的几个条件，并且可以在这种条件下扫描图案。可以根据条件生成二次电子信号，并将其转换为图像数据以显示各种图案图像。关于图像的扫描信息可以与基板上的位置信息一起存储。可以计算关于图案图像的每个扫描信息以生成新的集成图像。

3. 发明申请

US20120080597A1 APPARATUS AND METHOD TO INSPECT DEFECT OF SEMICONDUCTOR DEVICE 失效
标题翻译：检测半导体器件缺陷的装置和方法
公开(公告)号：US20120080597A1
公开(公告)日：2012-04-05
申请号：US13226757
申请日：2011-09-07
申请人： Ji-Young SHIN , Young-Nam Kim , Jong-An Kim , Hyung-Suk Cho , Yu-Sin Yang
发明人： Ji-Young SHIN , Young-Nam Kim , Jong-An Kim , Hyung-Suk Cho , Yu-Sin Yang
IPC分类号： G01N23/22
CPC分类号： H01J37/241 , H01J37/265 , H01J37/28 , H01L22/12
摘要： An apparatus and method to inspect a defect of a substrate. Since a recess of an under layer of a substrate is darker than a projection of a top layer, a ratio of a value of a secondary electron signal (of an SEM) of the under layer to a value of the top layer may be increased to improve a pattern image used to inspect an under layer defect. Several conditions under which electron beams are irradiated may be set, and the pattern may be scanned under such conditions. Secondary electron signals may be generated according to the conditions and converted into image data to display various pattern images. Scan information on the images may be stored with positional information on the substrate. Each of scan information on the pattern images may be calculated to generate a new integrated image.
摘要翻译：检查基板缺陷的装置和方法。由于衬底的底层的凹部比顶层的突起更暗，所以下层的二次电子信号（SEM）的值与顶层的值的比可以增加到改善用于检查下层缺陷的图案图像。可以设置照射电子束的几个条件，并且可以在这种条件下扫描图案。可以根据条件生成二次电子信号，并将其转换为图像数据以显示各种图案图像。关于图像的扫描信息可以与基板上的位置信息一起存储。可以计算关于图案图像的每个扫描信息以生成新的集成图像。

4. 发明申请

US20100136717A1 APPARATUS AND METHOD TO INSPECT DEFECT OF SEMICONDUCTOR DEVICE 失效
标题翻译：检测半导体器件缺陷的装置和方法
公开(公告)号：US20100136717A1
公开(公告)日：2010-06-03
申请号：US12627222
申请日：2009-11-30
申请人： Ji-Young SHIN , Young-Nam Kim , Jong-An KIM , Hyung-Suk CHO , Yu-Sin YANG
发明人： Ji-Young SHIN , Young-Nam Kim , Jong-An KIM , Hyung-Suk CHO , Yu-Sin YANG
IPC分类号： H01L21/66 , G01N23/00 , G06F19/00
CPC分类号： H01J37/241 , H01J37/265 , H01J37/28 , H01L22/12
摘要： An apparatus and method to inspect a defect of a semiconductor device. The amount of secondary electrons generated due to a scanning electron microscope (SEM) may depend on the topology of a pattern of a semiconductor substrate. The amount of secondary electrons emitted from a recess of an under layer is far smaller than that of secondary electrons emitted from a projection of a top layer. Since the recess is darker than the projection, a ratio of a value of a secondary electron signal of the under layer to a value of a secondary electron signal of the top layer may be increased in order to improve a pattern image used to inspect a defect in the under layer. To do this, a plurality of conditions under which electron beams (e-beams) are irradiated may be set, at least two may be selected out of the set conditions, and the pattern may be scanned under the selected conditions. Thus, secondary electron signals may be generated according to the respective conditions and converted into image data so that various pattern images may be displayed on a monitor. Scan information on the pattern images may be automatically stored in a computer storage along with positional information on a predetermined portion of the semiconductor substrate. When calculation conditions are input to a computer, each of scan information on the pattern images may be calculated to generate a new integrated pattern image.
摘要翻译：一种用于检查半导体器件的缺陷的装置和方法。由扫描电子显微镜（SEM）产生的二次电子量可能取决于半导体衬底图案的拓扑结构。从下层的凹部发射的二次电子的量远远小于从顶层的投影发射的二次电子的量。由于凹部比投影更暗，所以可以增加下层的二次电子信号的值与顶层的二次电子信号的值的比例，以便改善用于检查缺陷的图案图像在下层。为此，可以设置照射电子束（电子束）的多个条件，可以从设定条件中选择至少两个，并且可以在所选择的条件下扫描图案。因此，可以根据各自的条件生成二次电子信号，并将其转换为图像数据，从而可以在监视器上显示各种图案图像。关于图案图像的扫描信息可以与位于半导体基板的预定部分上的位置信息一起自动存储在计算机存储器中。当将计算条件输入到计算机时，可以计算每个关于图案图像的扫描信息，以生成新的集成图案图像。

5. 发明授权

US08324571B2 Apparatus and method for measuring semiconductor device 有权
标题翻译：半导体器件测量装置及方法
公开(公告)号：US08324571B2
公开(公告)日：2012-12-04
申请号：US12713261
申请日：2010-02-26
申请人： Young-Seok Kim , Jong-Sun Peak , Young-Nam Kim , Hyung-Suk Cho , Sun-Jin Kang , Bu-Dl Yoo
发明人： Young-Seok Kim , Jong-Sun Peak , Young-Nam Kim , Hyung-Suk Cho , Sun-Jin Kang , Bu-Dl Yoo
IPC分类号： G01N23/20
CPC分类号： H01L22/20 , H01L22/12
摘要： An apparatus for measuring a semiconductor device is provided. The apparatus includes a beam emitter configured to irradiate an electron beam onto a sample having the entire region composed of a critical dimension (CD) region, which is formed by etching or development, and a normal region connected to the CD region, and an analyzer electrically connected to the beam emitter, and configured to select and set a wavelength range of a region in which a difference in reflectance between the CD region and the normal region occurs, after obtaining reflectance from the electron beam reflected by a surface of the sample according to the wavelength of the electron beam. A method of measuring a semiconductor device using the measuring apparatus is also provided. Therefore, it is possible to minimize a change in reflectance due to the thickness and properties of the semiconductor device, and set a wavelength range to monitor a specific wavelength, thereby accurately measuring and analyzing a CD value of a measurement part of the semiconductor device.
摘要翻译：提供了一种用于测量半导体器件的设备。该装置包括：射束发射器，被配置为将电子束照射到具有由蚀刻或显影形成的临界尺寸（CD）区域和连接到CD区域的法线区域构成的整个区域的样品上;以及分析器电连接到射束发射器，并且被配置为在从由样品表面反射的电子束获得反射率之后，选择和设置发生CD区域和法线区域之间的反射率差的区域的波长范围，到电子束的波长。还提供了使用测量装置测量半导体器件的方法。因此，可以使半导体器件的厚度和特性的反射率变化最小化，并且设定波长范围来监视特定波长，从而精确地测量和分析半导体器件的测量部分的CD值。

6. 发明授权

US08395270B2 Etching composition for an under-bump metallurgy layer 有权
标题翻译：用于凸块下冶金层的蚀刻组合物
公开(公告)号：US08395270B2
公开(公告)日：2013-03-12
申请号：US13347169
申请日：2012-01-10
申请人： Dong-Min Kang , Bo-Ram Kang , Young-Nam Kim , Young-Sam Lim
发明人： Dong-Min Kang , Bo-Ram Kang , Young-Nam Kim , Young-Sam Lim
IPC分类号： H01L21/28 , H01L21/306
CPC分类号： H01L21/32134 , C23F1/38 , H01L24/11 , H01L2224/05001 , H01L2224/05022 , H01L2224/05027 , H01L2224/05124 , H01L2224/05147 , H01L2224/05572 , H01L2224/05644 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05671 , H01L2224/05684 , H01L2224/13099 , H01L2224/16 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/14 , H01L2924/00014
摘要： In an etching composition for an under-bump metallurgy (UBM) layer and a method of forming a bump structure, the etching composition includes about 40% by weight to about 90% by weight of hydrogen peroxide (H2O2), about 1% by weight to about 20% by weight of an aqueous basic solution including ammonium hydroxide (NH4OH) or tetraalkylammonium hydroxide, about 0.01% by weight to about 10% by weight of an alcohol compound, and about 2% by weight to 30% by weight of an ethylenediamine-based chelating agent. The etching composition may effectively etch the UBM layer including titanium or titanium tungsten and remove impurities. A method of forming a bump structure may employ such an etching composition.
摘要翻译：在用于凸块下冶金（UBM）层的蚀刻组合物和形成凸块结构的方法中，蚀刻组合物包含约40重量％至约90重量％的过氧化氢（H 2 O 2），约1重量％至约20重量％的包含氢氧化铵（NH 4 OH）或四烷基氢氧化铵的碱性水溶液，约0.01重量％至约10重量％的醇化合物，和约2重量％至30重量％的乙二胺类螯合剂。蚀刻组合物可以有效地蚀刻包括钛或钛钨的UBM层并除去杂质。形成凸块结构的方法可以采用这种蚀刻组合物。

7. 发明申请

US20120111048A1 REFRIGERATOR 审中-公开
标题翻译：冰箱
公开(公告)号：US20120111048A1
公开(公告)日：2012-05-10
申请号：US13383222
申请日：2009-07-14
申请人： Young-Nam Kim , Jong-Wook An , Chang-Woan Yang , Seong-Wook Kim
发明人： Young-Nam Kim , Jong-Wook An , Chang-Woan Yang , Seong-Wook Kim
IPC分类号： F25C1/00 , F25C5/18
CPC分类号： F25C1/24 , F25C1/10 , F25C2400/06 , F25C2400/10 , F25C2400/14 , F25D23/04 , F25D23/126 , F25D2323/021 , F25D2323/121
摘要： A refrigerator includes: a cabinet formed with a plurality of storage spaces divided; a first ice maker provided in any one of the plurality of storage spaces; a dispenser provided to a door, through which ice made in the first ice maker is discharged; a second ice maker provided in the storage space different from the storage space where the first ice maker is provided; and a water feeding passage branched such that it is possible to selectively supply water to the first ice maker and the second ice maker from a water supply source.
摘要翻译：冰箱包括：形成有多个分隔的储存空间的柜体; 设置在所述多个存储空间中的任何一个中的第一制冰机; 提供给门的分配器，第一制冰机中制成的冰被排出; 设置在与设置有第一制冰机的存储空间不同的存储空间中的第二制冰机; 以及分水口，使得能够从供水源向第一制冰机和第二制冰机选择性地供水。

8. 发明授权

US07815496B2 Polishing pad of a chemical mechanical polishing apparatus and method of manufacturing the same 有权
标题翻译：化学机械抛光装置的抛光垫及其制造方法
公开(公告)号：US07815496B2
公开(公告)日：2010-10-19
申请号：US11706241
申请日：2007-02-15
申请人： Young-Sam Lim , Young-Nam Kim , Gi-Jung Kim
发明人： Young-Sam Lim , Young-Nam Kim , Gi-Jung Kim
IPC分类号： B24D11/00
CPC分类号： B24B37/24 , B24D18/0063
摘要： The surface(s) of a polishing pad for polishing an object has a first portion including hydrophilic material and a second portion including hydrophobic material. The first portion of the polishing surface is located in a first region of the polishing pad and the second portion of the polishing surface is located in a second region of the polishing pad juxtaposed with the first region in the radial direction of the pad. The hydrophilic material may be a polymer resin that contains hydrophilic functional groups having OH and/or ═O at bonding sites of the polymer. The hydrophobic material may be a polymer resin that contains hydrophobic functional groups having H and/or F at bonding sites of the polymer. The polishing pad is manufactured by extruding respective lines of the hydrophilic and hydrophobic materials. The extruders and a backing are moved relative to each other such that the lines form concentric rings of the hydrophilic and hydrophobic materials.
摘要翻译：用于抛光物体的抛光垫的表面具有包括亲水材料的第一部分和包括疏水材料的第二部分。抛光表面的第一部分位于抛光垫的第一区域中，并且抛光表面的第二部分位于抛光垫的与垫的径向方向上与第一区域并置的第二区域中。亲水材料可以是在聚合物的键合位置处含有OH和/或= O的亲水性官能团的聚合物树脂。疏水性材料可以是在聚合物的结合位置含有H和/或F的疏水官能团的聚合物树脂。抛光垫通过挤出亲水和疏水材料的相应线来制造。挤出机和背衬相对于彼此移动，使得线形成亲水和疏水材料的同心环。

9. 发明授权

US07674007B2 Backlight assembly, liquid crystal display apparatus having the same and method of manufacturing lamp-fixing member 失效
标题翻译：背光组件，具有该背光组件的液晶显示装置和制造灯固定部件的方法
公开(公告)号：US07674007B2
公开(公告)日：2010-03-09
申请号：US12191599
申请日：2008-08-14
申请人： Sang-Sun Han , Jae-Hwan Chun , Jong-Ho Won , Hyun-Chul Jeong , Won-Ju Kim , Young-Nam Kim
发明人： Sang-Sun Han , Jae-Hwan Chun , Jong-Ho Won , Hyun-Chul Jeong , Won-Ju Kim , Young-Nam Kim
IPC分类号： F21V19/00
CPC分类号： G02F1/133604 , G02F1/133606 , G02F1/133608
摘要： A backlight assembly includes a receiving container, lamps, a diffusion plate and a lamp-fixing member. The receiving container includes a bottom plate and sidewalls together providing a receiving space. The lamps are arranged substantially parallel to each other on the bottom plate. The diffusion plate is disposed over the lamps. The lamp-fixing member includes a body portion extending substantially perpendicular to the lamps, a buffer protruding upwardly from the body portion, a diffusion plate supporting portion protruding from the buffer to support the diffusion plate and a lamp-fixing portion formed at the body portion to fix the lamps. Therefore, the buffer having elasticity is formed at an area at which the diffusion plate supporting portion is formed, so that rubbing between the diffusion plate and the diffusion plate supporting portion may be reduced.
摘要翻译：背光组件包括接收容器，灯，漫射板和灯固定构件。接收容器包括底板和一起提供接收空间的侧壁。灯在底板上基本上彼此平行地布置。扩散板设置在灯的上方。灯固定构件包括基本上垂直于灯延伸的主体部分，从主体部分向上突出的缓冲器，从缓冲器突出以支撑扩散板的漫射板支撑部分和形成在主体部分处的灯固定部分固定灯。因此，在扩散板支撑部分形成的区域形成具有弹性的缓冲器，从而可以减小扩散板和扩散板支撑部分之间的摩擦。

10. 发明授权

US07566666B2 Composition for removing an insulation material and related methods 有权
标题翻译：去除绝缘材料的组成和相关方法
公开(公告)号：US07566666B2
公开(公告)日：2009-07-28
申请号：US11500434
申请日：2006-08-08
申请人： Chun-Deuk Lee , Jung-Jea Myung , Myun-Kyu Park , Dong-Min Kang , Byoung-Woo Son , Masayuki Takashima , Young-Nam Kim , Hyun-Joon Kim
发明人： Chun-Deuk Lee , Jung-Jea Myung , Myun-Kyu Park , Dong-Min Kang , Byoung-Woo Son , Masayuki Takashima , Young-Nam Kim , Hyun-Joon Kim
IPC分类号： H01L21/461
CPC分类号： H01L21/31111 , H01L21/02079
摘要： A composition for removing an insulation material and related methods of use are disclosed. The composition comprises about 1 to 50 percent by weight of an oxidizing agent, about 0.1 to 35 percent by weight of a fluorine-containing compound, and water. The insulation material comprises at least one of a low-k material and a protection material.
摘要翻译：公开了一种用于除去绝缘材料的组合物和相关使用方法。该组合物包含约1-50重量％的氧化剂，约0.1-35重量％的含氟化合物和水。绝缘材料包括低k材料和保护材料中的至少一种。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式