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1. 发明授权

US06684011B2 Spot size converter and method of manufacturing the same 有权
标题翻译：点尺寸转换器及其制造方法
公开(公告)号：US06684011B2
公开(公告)日：2004-01-27
申请号：US09948555
申请日：2001-09-10
申请人： Jong Sool Jeong , Yong Soon Baek , Kwang Ryong Oh
发明人： Jong Sool Jeong , Yong Soon Baek , Kwang Ryong Oh
IPC分类号： G02B626
CPC分类号： G02B6/305 , G02B2006/12173 , G02B2006/12176 , G02B2006/12195
摘要： The present invention relates to a spot size converter and a method of fabricating the same, which provides efficient coupling between an optical fiber and integrated devices of optical waveguide. The spot size converter has an input and output optical waveguides formed in a vertical double-layer structure. Integrated to the output optical waveguide, an unidirectional side-tapered optical waveguide is formed. Due to the tapered structure of the optical waveguide, the effective refective index gradually changes along the length of the waveguide. Thus, the spot size of the optical signal gradually changes while the optical signal travels within the tapered optical waveguide. Therefore, the present invention effectively eliminates or minimizes the coupling loss and the reflection loss between the optical fiber and the devices connected to the spot size converter. In particular, the present invention provides method for easily fabricating a tapered and narrow optical waveguide structure using low-resolution photolithography technique and reducing the manufacturing cost and increasing the manufacturing yield at the same time.
摘要翻译：光斑尺寸转换器及其制造方法技术领域本发明涉及一种光斑尺寸转换器及其制造方法，其提供光纤与光波导的集成器件之间的有效耦合。光斑尺寸转换器具有以垂直双层结构形成的输入和输出光波导。集成到输出光波导中，形成单向侧锥形光波导。由于光波导的锥形结构，有效的反射指数沿波导的长度逐渐变化。因此，光信号的光斑尺寸在光信号在锥形光波导内行进时逐渐变化。因此，本发明有效地消除或最小化光纤与连接到光斑尺寸转换器的器件之间的耦合损耗和反射损耗。特别地，本发明提供了使用低分辨率光刻技术容易地制造锥形和窄光波导结构并同时降低制造成本和提高制造产量的方法。

2. 发明申请

US20060189016A1 Method of fabricating semiconductor optical device 有权
标题翻译：制造半导体光学器件的方法
公开(公告)号：US20060189016A1
公开(公告)日：2006-08-24
申请号：US11293615
申请日：2005-12-02
申请人： Moon Park , Sahng Gi Park , Su Hwan Oh , Yong Soon Baek , Kwang Ryong Oh , Gyung Ock Kim , Sung Bock Kim
发明人： Moon Park , Sahng Gi Park , Su Hwan Oh , Yong Soon Baek , Kwang Ryong Oh , Gyung Ock Kim , Sung Bock Kim
IPC分类号： H01L21/00
CPC分类号： H01S5/026 , H01S5/0425 , H01S5/12 , H01S5/2063 , H01S5/2275 , H01S5/3201 , H01S5/50 , H01S2302/00
摘要： Provided is a method of fabricating a semiconductor optical device for use in a subscriber or a wavelength division multiplexing (WDM) optical communication system, in which a laser diode (LD) and a semiconductor optical amplifier (SOA) are integrated in a single active layer. The laser diode (LD) and the semiconductor optical amplifier (SOA) are optically connected to each other, and electrically insulated from each other by ion injection, whereby light generated from the LD is amplified by the SOA to provide low oscillation start current and high intensity of output light when current is individually injected through each electrode.
摘要翻译：提供一种制造用于用户或波分复用（WDM）光通信系统的半导体光学器件的方法，其中激光二极管（LD）和半导体光放大器（SOA）集成在单个有源层中。激光二极管（LD）和半导体光放大器（SOA）彼此光学连接，并通过离子注入彼此电绝缘，由LD产生的光被SOA放大，以提供低振荡起始电流和高当通过每个电极单独注入电流时输出光的强度。

3. 发明授权

US06856452B2 Filter-free wavelength converter 有权
标题翻译：无滤波器的波长转换器
公开(公告)号：US06856452B2
公开(公告)日：2005-02-15
申请号：US10334937
申请日：2002-12-31
申请人： Jong Hoi Kim , Kwang Ryong Oh , Yong Soon Baek , Hyun Soo Kim , Kang Ho Kim
发明人： Jong Hoi Kim , Kwang Ryong Oh , Yong Soon Baek , Hyun Soo Kim , Kang Ho Kim
IPC分类号： G02B6/125 , G02B6/28 , G02F1/21 , G02F2/00 , G02F1/365
CPC分类号： G02F2/004 , G02B6/2813 , G02F2001/212 , G02F2001/217 , H01S5/509
摘要： Filter-free wavelength converters for separating and rejecting an optical input signal. A first input port couples a continuous wave (CW) light. A second input port couples an optical input signal. A multimode interference semiconductor optical amplifier (MMI-SOA) determines the output port with the input port and intensity-modulation of the CW light with the optical input signal. A first output port guides the converted signal, and a second output port guides the optical input signal.
摘要翻译：用于分离和拒绝光输入信号的无滤波器波长转换器。第一输入端口连接连续波（CW）光。第二输入端口耦合光输入信号。多模干涉半导体光放大器（MMI-SOA）通过输入端口确定输出端口，并用光输入信号确定CW光的强度调制。第一输出端口引导转换的信号，第二输出端口引导光输入信号。

4. 发明授权

US06593162B1 Method of manufacturing semiconductor optical device 有权
标题翻译：制造半导体光学器件的方法
公开(公告)号：US06593162B1
公开(公告)日：2003-07-15
申请号：US10185137
申请日：2002-06-27
申请人： Kyung Hyun Park , Yong Soon Baek , Sung Bock Kim , Kwang Ryong Oh
发明人： Kyung Hyun Park , Yong Soon Baek , Sung Bock Kim , Kwang Ryong Oh
IPC分类号： H01L2100
CPC分类号： B82Y20/00 , H01S5/1014 , H01S5/1032 , H01S5/106 , H01S5/2081 , H01S5/227 , H01S5/2275 , H01S5/34373
摘要： The present invention relates to a method of manufacturing a semiconductor optical device. The present invention discloses a method of manufacturing an optical device of a planar buried heterostructure (PBH) type by which an active layer region of a taper shape at both ends is patterned, an undoped InP layer is selectively grown in order to reduce the propagation loss and two waveguides are simultaneously formed by means of a self-aligned method, thus simplifying the process to increase repeatability and yield.
摘要翻译：本发明涉及半导体光学器件的制造方法。本发明公开了一种制造平面埋入异质结构（PBH）型的光学器件的方法，通过该方法，在两端形成锥形的有源层区域被图案化，选择性地生长未掺杂的InP层，以便降低传播损耗并且通过自对准方法同时形成两个波导，从而简化了增加重复性和产率的过程。

5. 发明授权

US07599624B2 System and method for switching channels using tunable laser diodes 有权
标题翻译：使用可调激光二极管切换通道的系统和方法
公开(公告)号：US07599624B2
公开(公告)日：2009-10-06
申请号：US11252401
申请日：2005-10-17
申请人： Sahng Gi Park , Su Hwan Oh , Kwang Seong Choi , Moon Ho Park , Yong Soon Baek , Kwang Ryong Oh
发明人： Sahng Gi Park , Su Hwan Oh , Kwang Seong Choi , Moon Ho Park , Yong Soon Baek , Kwang Ryong Oh
IPC分类号： H04J14/00
CPC分类号： H04J14/0282 , H04J14/0226 , H04J14/0246 , H04J14/0247 , H04J14/025 , H04J14/0252 , H04J2014/0253
摘要： A channel switching function is added to a wavelength division multiplexing passive optical network (WDM-PON) system, which is an access optical network system, and the potential transmission rate is increased by combining wide wavelength tunable lasers and a time division multiplexing (TDM) data structure and properly using the necessary optical components. In addition, when the wavelength of a light source or an arrayed waveguide grating (AWG) changes, the wavelength is traced and the magnitude of a transmitted signal is maximized without an additional detour line using a loop-back network structure. Furthermore, fewer thermo-electric controllers (TECs) are required for stabilizing the temperature of an optical line terminal (OLT) using wavelength tunable lasers, each laser electrically changing its wavelength.
摘要翻译：信道切换功能被添加到作为接入光网络系统的波分复用无源光网络（WDM-PON）系统，并且通过组合宽波长可调激光器和时分复用（TDM）来增加潜在传输速率，数据结构，并正确使用必要的光学元件。此外，当光源或阵列波导光栅（AWG）的波长改变时，跟踪波长，并且使用环回网络结构，没有额外的绕行线，传输信号的幅度最大化。此外，需要较少的热电控制器（TEC）来稳定使用波长可调激光器的光线路终端（OLT）的温度，每个激光电子改变其波长。

6. 发明授权

US07599403B2 Superluminescent diode and method of manufacturing the same 有权
标题翻译：超发光二极管及其制造方法
公开(公告)号：US07599403B2
公开(公告)日：2009-10-06
申请号：US11635195
申请日：2006-12-07
申请人： Moon Ho Park , Yong Soon Baek , Kwang Ryong Oh
发明人： Moon Ho Park , Yong Soon Baek , Kwang Ryong Oh
IPC分类号： H01S3/00 , H01S5/00
CPC分类号： H01S5/0265 , B82Y20/00 , H01S5/026 , H01S5/0425 , H01S5/101 , H01S5/2063 , H01S5/2201 , H01S5/2224 , H01S5/2275 , H01S5/3406 , H01S5/34306 , H01S5/4006
摘要： A 1.55 μm SLD having a laser diode (LD) region and a semiconductor optical amplifier (SOA) region, and a method of fabricating the same, are disclosed. The SLD includes: an InP substrate having a LD region and a SOA region for amplifying light emitted from the LD region; an optical waveguide having a BRS (buried ridge strip) structure having an active layer of resonant strip pattern formed on the InP substrate and extending from the SOA region to the LD region; a first electrode formed on the active layer in the SOA region, a second electrode formed on the active layer in the LD region and electrically isolated from the first electrode; and a current blocking region interposed between the first electrode and the second electrode in order to electrically isolate the first electrode and the second electrode from each other.
摘要翻译：公开了具有激光二极管（LD）区域和半导体光放大器（SOA）区域的1.55μmSLD及其制造方法。 SLD包括：具有LD区域的InP衬底和用于放大从LD区域发射的光的SOA区域; 具有BRS（埋脊条）结构的光波导，其具有形成在InP衬底上并从SOA区延伸到LD区的谐振带图案的有源层; 形成在SOA区域中的有源层上的第一电极，形成在LD区域中的有源层上并与第一电极电隔离的第二电极; 以及插入在第一电极和第二电极之间的电流阻挡区域，以将第一电极和第二电极彼此电隔离。

7. 发明授权

US07378292B2 Method of fabricating semiconductor optical device 有权
标题翻译：制造半导体光学器件的方法
公开(公告)号：US07378292B2
公开(公告)日：2008-05-27
申请号：US11293615
申请日：2005-12-02
申请人： Moon Ho Park , Sahng Gi Park , Su Hwan Oh , Yong Soon Baek , Kwang Ryong Oh , Gyung Ock Kim , Sung Bock Kim
发明人： Moon Ho Park , Sahng Gi Park , Su Hwan Oh , Yong Soon Baek , Kwang Ryong Oh , Gyung Ock Kim , Sung Bock Kim
IPC分类号： H01L21/00
CPC分类号： H01S5/026 , H01S5/0425 , H01S5/12 , H01S5/2063 , H01S5/2275 , H01S5/3201 , H01S5/50 , H01S2302/00
摘要： Provided is a method of fabricating a semiconductor optical device for use in a subscriber or a wavelength division multiplexing (WDM) optical communication system, in which a laser diode (LD) and a semiconductor optical amplifier (SOA) are integrated in a single active layer. The laser diode (LD) and the semiconductor optical amplifier (SOA) are optically connected to each other, and electrically insulated from each other by ion injection, whereby light generated from the LD is amplified by the SOA to provide low oscillation start current and high intensity of output light when current is individually injected through each electrode.
摘要翻译：提供一种制造用于用户或波分复用（WDM）光通信系统的半导体光学器件的方法，其中激光二极管（LD）和半导体光放大器（SOA）集成在单个有源层中。激光二极管（LD）和半导体光放大器（SOA）彼此光学连接，并通过离子注入彼此电绝缘，由LD产生的光被SOA放大，以提供低振荡起始电流和高当通过每个电极单独注入电流时输出光的强度。

8. 发明授权

US07248765B2 Temperature-insensitive polymeric optical AWG device and manufacturing method therefor 失效
标题翻译：温度不敏感的聚合物光学AWG器件及其制造方法
公开(公告)号：US07248765B2
公开(公告)日：2007-07-24
申请号：US11361204
申请日：2006-02-23
申请人： Jong Moo Lee , Sun Tak Park , Yong Soon Baek
发明人： Jong Moo Lee , Sun Tak Park , Yong Soon Baek
IPC分类号： G02B6/34
CPC分类号： G02B6/1221 , G02B6/12011 , G02B6/1203 , G02B2006/12176
摘要： Provided are a temperature-insensitive polymeric optical AWG device and method of manufacturing the same. The temperature-insensitive polymeric optical AWG device includes: polymeric grating channel waveguides interposed between free propagation slab regions on a substrate between the input and output waveguides and having different lengths; a plurality of hollow trenches formed by selectively etching a surface of the substrate under the polymeric grating channel waveguides and allowing the polymeric grating channel waveguides to freely thermally expand from the substrate depending on a temperature variation; and a shield layer shielding entrances of the hollow trenches so that the polymeric grating channel waveguides do not flow into the hollow trenches.
摘要翻译：提供了一种不含温度的聚合物光学AWG器件及其制造方法。温度不敏感的聚合物光学AWG器件包括：插入在输入和输出波导之间的衬底上的自由传播板状区域之间且具有不同长度的聚合光栅通道波导; 通过在聚合物光栅通道波导下选择性地蚀刻基底的表面并允许聚合物光栅通道波导根据温度变化自由地从基板膨胀而形成的多个中空沟槽; 以及屏蔽层屏蔽中空沟槽的入口，使得聚合光栅通道波导不流入中空沟槽。

9. 发明申请

US20090154923A1 WAVELENGTH SELECTIVE SWITCH 审中-公开
标题翻译：波长选择开关
公开(公告)号：US20090154923A1
公开(公告)日：2009-06-18
申请号：US12208560
申请日：2008-09-11
申请人： Oh Kee KWON , Yong Soon Baek , Jang Uk Shin , Young Tak Han , Dong Hun Lee , Chul Wook Lee , Eun Deok Sim , Jong Hoi Kim , Sang Pil Han , Sang Ho Park
发明人： Oh Kee KWON , Yong Soon Baek , Jang Uk Shin , Young Tak Han , Dong Hun Lee , Chul Wook Lee , Eun Deok Sim , Jong Hoi Kim , Sang Pil Han , Sang Ho Park
IPC分类号： H04J14/02
CPC分类号： G02B6/12019 , G02B6/356 , H04J14/0212 , H04J14/0221 , H04Q11/0005 , H04Q2011/0011 , H04Q2011/0016 , H04Q2011/0024 , H04Q2011/0026
摘要： Provided is a wavelength selective switch (WSS), and more particularly, a wavelength selective switch for electrically switching a wavelength without physical displacement. The wavelength selective switch includes an optical demultiplexer for dividing an input optical signal into signals having wavelengths corresponding to respective channels, selecting either the optical signal of each channel obtained by dividing the input optical signal or an optical signal input via an add port, and outputting the selected optical signal; and an optical multiplexer including an optical deflecting unit for individually deflecting the optical signals of the respective channels received from the optical demultiplexer according to supplied current or applied voltage, wherein the optical signal of each channel deflected by the optical deflecting unit is output to a specific output port. In the wavelength selective switch, current is supplied to the optical deflectors to switch the channels, resulting in higher reliability, smaller volume and higher switching speed than a conventional wavelength selective switch using mechanical displacement to switch channels.
摘要翻译：提供了一种波长选择开关（WSS），更具体地说，提供一种用于电气切换没有物理位移的波长的波长选择开关。波长选择开关包括：光分路器，用于将输入光信号分成具有对应于各个通道的波长的信号，选择通过分频输入光信号或通过添加端口输入的光信号获得的每个通道的光信号，并输出所选择的光信号; 以及光复用器，其包括光偏转单元，用于根据所提供的电流或施加电压单独地偏转从光解复用器接收的各通道的光信号，其中由光偏转单元偏转的每个通道的光信号被输出到特定输出端口在波长选择开关中，电流被提供给光偏转器以切换通道，导致比使用机械位移切换通道的常规波长选择开关更高的可靠性，更小的体积和更高的开关速度。

10. 发明授权

US07310469B2 Waveguide PIN photodiode having graded index distribution centering around optical absorption layer 失效
标题翻译：具有以光吸收层为中心的渐变折射率分布的波导PIN光电二极管
公开(公告)号：US07310469B2
公开(公告)日：2007-12-18
申请号：US11481580
申请日：2006-07-06
申请人： Sahng Gi Park , Eun Deok Sim , Jeong Woo Park , Jae Sik Sim , Yong Soon Baek
发明人： Sahng Gi Park , Eun Deok Sim , Jeong Woo Park , Jae Sik Sim , Yong Soon Baek
IPC分类号： G02B6/10 , G02B6/26 , H04B10/06
CPC分类号： G02B6/12004 , H01L31/0304 , H01L31/105
摘要： A waveguide PIN photodiode is provided. The waveguide PIN photodiode includes a lower light guide layer, a light absorption layer, an upper light guide layer, and a cladding layer. The lower light guide is formed on a substrate, and the light absorption layer is formed on the lower light guide layer. The upper light guide layer is formed on the light absorption layer, and the cladding layer is formed on the upper light guide layer. The lower light guide layer, the light absorption layer, and the upper light guide layer constitute a core layer, which is an optical waveguide, and graded index distribution is symmetrically formed in a depth direction, centering around the light absorption layer having a highest refractive index.
摘要翻译：提供了一种波导PIN光电二极管。波导PIN光电二极管包括下导光层，光吸收层，上导光层和包覆层。下部光导件形成在基板上，并且光吸收层形成在下部光导层上。上光导层形成在光吸收层上，包层形成在上光导层上。下导光层，光吸收层和上导光层构成作为光波导的芯层，并且在深度方向上对称地形成渐变折射率分布，以具有最高折射率的光吸收层为中心指数。

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