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    • 1. 发明授权
    • Buried ridge waveguide laser diode
    • 埋脊波导激光二极管
    • US07551658B2
    • 2009-06-23
    • US11633739
    • 2006-12-05
    • Su Hwan OhKi soo KimOh Kee KwonYong soon Baek
    • Su Hwan OhKi soo KimOh Kee KwonYong soon Baek
    • H01S5/00
    • H01S5/2231B82Y20/00H01S5/1039H01S5/2222H01S5/3211H01S5/3213H01S5/34306
    • Provided is a buried ridge waveguide laser diode that has improved temperature characteristics and can reduce optical loss by a leakage current. The buried ridge waveguide laser diode includes: a ridge region that extends vertically with a constant width and is composed of a selective etching layer and a first compound layer formed of a first conductive type material on a portion of the clad layer; and a p-n-p current blocking layer that has a thickness identical to the depth of the ridge region on the clad layer outside the ridge region and includes a second compound layer formed of a second conductive type material opposite to the first conductive type material. At this time, the current blocking layer includes the first compound layer extending on the second compound layer.
    • 提供了具有改善的温度特性并且可以通过漏电流来减少光学损耗的埋脊式波导激光二极管。 掩埋脊波导激光二极管包括:以恒定宽度垂直延伸的脊区域,并且由包层的一部分上的选择性蚀刻层和由第一导电型材料形成的第一复合层构成; 以及p-n-p电流阻挡层,其厚度与脊区域外的包覆层上的脊区域的深度相同,并且包括由与第一导电类型材料相对的第二导电类型材料形成的第二化合物层。 此时,电流阻挡层包括在第二化合物层上延伸的第一化合物层。