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1. 发明授权

US07551658B2 Buried ridge waveguide laser diode 有权
标题翻译：埋脊波导激光二极管
公开(公告)号：US07551658B2
公开(公告)日：2009-06-23
申请号：US11633739
申请日：2006-12-05
申请人： Su Hwan Oh , Ki soo Kim , Oh Kee Kwon , Yong soon Baek
发明人： Su Hwan Oh , Ki soo Kim , Oh Kee Kwon , Yong soon Baek
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/1039 , H01S5/2222 , H01S5/3211 , H01S5/3213 , H01S5/34306
摘要： Provided is a buried ridge waveguide laser diode that has improved temperature characteristics and can reduce optical loss by a leakage current. The buried ridge waveguide laser diode includes: a ridge region that extends vertically with a constant width and is composed of a selective etching layer and a first compound layer formed of a first conductive type material on a portion of the clad layer; and a p-n-p current blocking layer that has a thickness identical to the depth of the ridge region on the clad layer outside the ridge region and includes a second compound layer formed of a second conductive type material opposite to the first conductive type material. At this time, the current blocking layer includes the first compound layer extending on the second compound layer.
摘要翻译：提供了具有改善的温度特性并且可以通过漏电流来减少光学损耗的埋脊式波导激光二极管。掩埋脊波导激光二极管包括：以恒定宽度垂直延伸的脊区域，并且由包层的一部分上的选择性蚀刻层和由第一导电型材料形成的第一复合层构成; 以及p-n-p电流阻挡层，其厚度与脊区域外的包覆层上的脊区域的深度相同，并且包括由与第一导电类型材料相对的第二导电类型材料形成的第二化合物层。此时，电流阻挡层包括在第二化合物层上延伸的第一化合物层。

2. 发明申请

US20060189016A1 Method of fabricating semiconductor optical device 有权
标题翻译：制造半导体光学器件的方法
公开(公告)号：US20060189016A1
公开(公告)日：2006-08-24
申请号：US11293615
申请日：2005-12-02
申请人： Moon Park , Sahng Gi Park , Su Hwan Oh , Yong Soon Baek , Kwang Ryong Oh , Gyung Ock Kim , Sung Bock Kim
发明人： Moon Park , Sahng Gi Park , Su Hwan Oh , Yong Soon Baek , Kwang Ryong Oh , Gyung Ock Kim , Sung Bock Kim
IPC分类号： H01L21/00
CPC分类号： H01S5/026 , H01S5/0425 , H01S5/12 , H01S5/2063 , H01S5/2275 , H01S5/3201 , H01S5/50 , H01S2302/00
摘要： Provided is a method of fabricating a semiconductor optical device for use in a subscriber or a wavelength division multiplexing (WDM) optical communication system, in which a laser diode (LD) and a semiconductor optical amplifier (SOA) are integrated in a single active layer. The laser diode (LD) and the semiconductor optical amplifier (SOA) are optically connected to each other, and electrically insulated from each other by ion injection, whereby light generated from the LD is amplified by the SOA to provide low oscillation start current and high intensity of output light when current is individually injected through each electrode.
摘要翻译：提供一种制造用于用户或波分复用（WDM）光通信系统的半导体光学器件的方法，其中激光二极管（LD）和半导体光放大器（SOA）集成在单个有源层中。激光二极管（LD）和半导体光放大器（SOA）彼此光学连接，并通过离子注入彼此电绝缘，由LD产生的光被SOA放大，以提供低振荡起始电流和高当通过每个电极单独注入电流时输出光的强度。

3. 发明授权

US07012945B2 Multi DFB laser diode 失效
标题翻译：多DFB激光二极管
公开(公告)号：US07012945B2
公开(公告)日：2006-03-14
申请号：US10725822
申请日：2003-12-01
申请人： Kyung-Hyun Park , Young-Ahn Leem , Dong-Churl Kim , Dae-Su Yee , Sung-Bock Kim , Yong-Soon Baek
发明人： Kyung-Hyun Park , Young-Ahn Leem , Dong-Churl Kim , Dae-Su Yee , Sung-Bock Kim , Yong-Soon Baek
IPC分类号： H01S5/00
CPC分类号： H01S5/227 , H01S5/028 , H01S5/0623 , H01S5/06258 , H01S5/0658 , H01S5/1215 , H01S5/1237 , H01S5/2081 , H01S5/2226 , H01S5/3213 , H01S5/32333 , H01S2301/173
摘要： A multi DFB laser diode for generating spontaneous pulses comprises first and second DFB sections each of which has a substrate including a diffraction grating, an active layer formed on the substrate, a clad layer formed on the active layer and including a refraction varying layer, and an electrode formed on the active layer; and a phase tuning section including a substrate, an active layer formed on the substrate, a clad layer formed on the active layer, and an electrode isolated from the electrode of the first and second DFB sections. The refraction varying layer in the active layer of the first DFB section has a refractive index different from that of the refraction varying layer in the active layer of the second DFB section.
摘要翻译：用于产生自发脉冲的多DFB激光二极管包括第一和第二DFB部分，每个DFB部分具有包括衍射光栅的衬底，在衬底上形成的有源层，形成在有源层上并包括折射变化层的覆层，以及形成在有源层上的电极; 以及相位调谐部，其包括基板，形成在所述基板上的有源层，形成在所述有源层上的覆盖层，以及与所述第一DFB部和所述第二DFB部的电极隔离的电极。第一DFB部分的有源层中的折射变化层具有与第二DFB部分的有源层中的折射变化层的折射率不同的折射率。

4. 发明授权

US06928098B2 High frequency optical pulse source 有权
标题翻译：高频光脉冲源
公开(公告)号：US06928098B2
公开(公告)日：2005-08-09
申请号：US10632587
申请日：2003-07-31
申请人： Dong-Churl Kim , Young-Ahn Leem , Dae-Su Yee , Kyung-Hyun Pakr , Sung-Bock Kim , Yong-Soon Baek , Eun-Deok Sim
发明人： Dong-Churl Kim , Young-Ahn Leem , Dae-Su Yee , Kyung-Hyun Pakr , Sung-Bock Kim , Yong-Soon Baek , Eun-Deok Sim
IPC分类号： H01S5/12 , H01S5/0625 , H01S5/065 , H01S5/00 , H01S3/08
CPC分类号： H01S5/06258 , H01S5/0657
摘要： Disclosed is a high frequency optical pulse source generating stable optical pulses over a wide current range in an optical transmission system to enhance stability and reliability, the high frequency optical pulse source implementing, in one chip, a multi-section distributed feedback (DFB) laser diode with a phase control section arranged between two DFB laser diodes. By controlling the current applied to the electrode of the phase control section while applying currents to the first and second DFB sections, the present invention causes self-mode locking between the compound-cavity modes having similar threshold currents, thereby generating stable tens GHz-level optical pulses. Hence, the present invention generates optical pulses uniformly over a wide current range, thereby enhancing the stability and reliability of the element.
摘要翻译：公开了一种在光传输系统中在宽电流范围内产生稳定的光脉冲以提高稳定性和可靠性的高频光脉冲源，高频光脉冲源在一个芯片中实现了多段分布反馈（DFB）激光器二极管，相位控制部分布置在两个DFB激光二极管之间。通过控制施加到相位控制部分的电极的电流，同时向第一和第二DFB部分施加电流，本发明引起具有类似阈值电流的化合物腔模式之间的自锁定，从而产生稳定的数十GHz级光脉冲。因此，本发明在宽电流范围内均匀地产生光脉冲，从而提高元件的稳定性和可靠性。

5. 发明授权

US06856452B2 Filter-free wavelength converter 有权
标题翻译：无滤波器的波长转换器
公开(公告)号：US06856452B2
公开(公告)日：2005-02-15
申请号：US10334937
申请日：2002-12-31
申请人： Jong Hoi Kim , Kwang Ryong Oh , Yong Soon Baek , Hyun Soo Kim , Kang Ho Kim
发明人： Jong Hoi Kim , Kwang Ryong Oh , Yong Soon Baek , Hyun Soo Kim , Kang Ho Kim
IPC分类号： G02B6/125 , G02B6/28 , G02F1/21 , G02F2/00 , G02F1/365
CPC分类号： G02F2/004 , G02B6/2813 , G02F2001/212 , G02F2001/217 , H01S5/509
摘要： Filter-free wavelength converters for separating and rejecting an optical input signal. A first input port couples a continuous wave (CW) light. A second input port couples an optical input signal. A multimode interference semiconductor optical amplifier (MMI-SOA) determines the output port with the input port and intensity-modulation of the CW light with the optical input signal. A first output port guides the converted signal, and a second output port guides the optical input signal.
摘要翻译：用于分离和拒绝光输入信号的无滤波器波长转换器。第一输入端口连接连续波（CW）光。第二输入端口耦合光输入信号。多模干涉半导体光放大器（MMI-SOA）通过输入端口确定输出端口，并用光输入信号确定CW光的强度调制。第一输出端口引导转换的信号，第二输出端口引导光输入信号。

6. 发明授权

US06639735B2 Method for manufacturing an optical device 失效
公开(公告)号：US06639735B2
公开(公告)日：2003-10-28
申请号：US09927221
申请日：2001-08-10
申请人： Kyung-Hyun Park , Jong-Hoi Kim , Yong-Soon Baek , Moon-Ho Park , Sung-Bock Kim , Kwang-Ryong Oh
发明人： Kyung-Hyun Park , Jong-Hoi Kim , Yong-Soon Baek , Moon-Ho Park , Sung-Bock Kim , Kwang-Ryong Oh
IPC分类号： G02B308
CPC分类号： G02B6/1228 , G02B6/12004 , G02B2006/12176 , H01S5/1014 , H01S5/1032 , H01S5/2081
摘要： Disclosed is a method for the fabrication of a spot-size converter with a lateral-tapered waveguide (or an active layer), which utilizes a mask during a lithographic process wherein the mask has a pad that can absorb strain to be occurred during forming a lateral-tapered waveguide pattern at its distal end and the lateral-tapered waveguide is fabricated by forming the distal end on the order of about 0.6 &mgr;m in width followed by forming the lateral-tapered waveguide on the order of 0.1 &mgr;m using an wet etching. Thus, it is possible to reduce a fabrication cost because it is free from a high-resolution electron beam lithography and a stepper, and hence enhance a reproducibility of the lateral-tapered waveguide because it is free from an excessive wet etching during the use of a contact exposure equipment. Further, it is possible to integrate the spot-size converter fabricated by the above with an optical device, resulting in an increased position adjustment and reproducibility of the spot-size converter, which in turn, leads to increase in yield for the optical device.

7. 发明授权

US06593162B1 Method of manufacturing semiconductor optical device 有权
标题翻译：制造半导体光学器件的方法
公开(公告)号：US06593162B1
公开(公告)日：2003-07-15
申请号：US10185137
申请日：2002-06-27
申请人： Kyung Hyun Park , Yong Soon Baek , Sung Bock Kim , Kwang Ryong Oh
发明人： Kyung Hyun Park , Yong Soon Baek , Sung Bock Kim , Kwang Ryong Oh
IPC分类号： H01L2100
CPC分类号： B82Y20/00 , H01S5/1014 , H01S5/1032 , H01S5/106 , H01S5/2081 , H01S5/227 , H01S5/2275 , H01S5/34373
摘要： The present invention relates to a method of manufacturing a semiconductor optical device. The present invention discloses a method of manufacturing an optical device of a planar buried heterostructure (PBH) type by which an active layer region of a taper shape at both ends is patterned, an undoped InP layer is selectively grown in order to reduce the propagation loss and two waveguides are simultaneously formed by means of a self-aligned method, thus simplifying the process to increase repeatability and yield.
摘要翻译：本发明涉及半导体光学器件的制造方法。本发明公开了一种制造平面埋入异质结构（PBH）型的光学器件的方法，通过该方法，在两端形成锥形的有源层区域被图案化，选择性地生长未掺杂的InP层，以便降低传播损耗并且通过自对准方法同时形成两个波导，从而简化了增加重复性和产率的过程。

8. 发明授权

US07248765B2 Temperature-insensitive polymeric optical AWG device and manufacturing method therefor 失效
标题翻译：温度不敏感的聚合物光学AWG器件及其制造方法
公开(公告)号：US07248765B2
公开(公告)日：2007-07-24
申请号：US11361204
申请日：2006-02-23
申请人： Jong Moo Lee , Sun Tak Park , Yong Soon Baek
发明人： Jong Moo Lee , Sun Tak Park , Yong Soon Baek
IPC分类号： G02B6/34
CPC分类号： G02B6/1221 , G02B6/12011 , G02B6/1203 , G02B2006/12176
摘要： Provided are a temperature-insensitive polymeric optical AWG device and method of manufacturing the same. The temperature-insensitive polymeric optical AWG device includes: polymeric grating channel waveguides interposed between free propagation slab regions on a substrate between the input and output waveguides and having different lengths; a plurality of hollow trenches formed by selectively etching a surface of the substrate under the polymeric grating channel waveguides and allowing the polymeric grating channel waveguides to freely thermally expand from the substrate depending on a temperature variation; and a shield layer shielding entrances of the hollow trenches so that the polymeric grating channel waveguides do not flow into the hollow trenches.
摘要翻译：提供了一种不含温度的聚合物光学AWG器件及其制造方法。温度不敏感的聚合物光学AWG器件包括：插入在输入和输出波导之间的衬底上的自由传播板状区域之间且具有不同长度的聚合光栅通道波导; 通过在聚合物光栅通道波导下选择性地蚀刻基底的表面并允许聚合物光栅通道波导根据温度变化自由地从基板膨胀而形成的多个中空沟槽; 以及屏蔽层屏蔽中空沟槽的入口，使得聚合光栅通道波导不流入中空沟槽。

9. 发明授权

US08086105B2 Wavelength division multiplexer/demultiplexer having flat wavelength response 失效
标题翻译：具有平坦波长响应的波分复用器/解复用器
公开(公告)号：US08086105B2
公开(公告)日：2011-12-27
申请号：US12241692
申请日：2008-09-30
申请人： Jang Uk Shin , Sang Ho Park , Young Tak Han , Sang Pil Han , Yong Soon Baek
发明人： Jang Uk Shin , Sang Ho Park , Young Tak Han , Sang Pil Han , Yong Soon Baek
IPC分类号： H04J14/02
CPC分类号： G02B6/12016
摘要： Provided is a wavelength division multiplexer/demultiplexer having a flat wavelength response. In the wavelength division multiplexer/demultiplexer, a modified taper-shaped optical waveguide is interposed between an input waveguide and a first slab waveguide, such that the distribution of an optical signal input to an Arrayed Waveguide Grating (AWG) has a sinc-function shape. Thus, a flat wavelength response can be obtained in an output waveguide. In addition, the modified taper-shaped optical waveguide interposed to obtain a flat wavelength response has a small size and a simple structure, and thus can be applied to a conventional wavelength division multiplexer/demultiplexer without a design change.
摘要翻译：提供具有平坦波长响应的波分复用器/解复用器。在波分多路复用器/解复用器中，在输入波导和第一平板波导之间插入改进的锥形光波导，使得输入到阵列波导光栅（AWG）的光信号的分布具有正弦函数形状。因此，可以在输出波导中获得平坦的波长响应。此外，插入以获得平坦波长响应的改进的锥形光波导具有小尺寸和简单的结构，因此可以应用于常规的波分复用器/解复用器而没有设计变化。

10. 发明申请

US20100158056A1 SEMICONDUCTOR LASER DEVICE 审中-公开
标题翻译：半导体激光器件
公开(公告)号：US20100158056A1
公开(公告)日：2010-06-24
申请号：US12495616
申请日：2009-06-30
申请人： Jae-Heon Shin , Kyung-Hyun Park , Nam-Je Kim , Chul-Wook Lee , Eun-Deok Sim , Sang-Pil Han , Yong-Soon Baek
发明人： Jae-Heon Shin , Kyung-Hyun Park , Nam-Je Kim , Chul-Wook Lee , Eun-Deok Sim , Sang-Pil Han , Yong-Soon Baek
IPC分类号： H01S3/13
CPC分类号： H01S5/06256 , H01S5/0623 , H01S5/1215 , H01S2302/02
摘要： Provided is a semiconductor laser device including: a gain area where multi-wavelength lights are generated and gain are provided; a first reflection area where among the multi-wavelength lights, a first-wavelength light is reflected to the gain area in response to a first selection signal; a second reflection area where among the multi-wavelength lights, a second-wavelength light is reflected to the gain area; and a phase control area where a phase of the second-wavelength light is shifted in response to a phase control signal, the phase control area being disposed between the first reflection layer and the second reflection layer.
摘要翻译：本发明提供一种半导体激光装置，具备：生成多波长光并增益的增益区域; 第一反射区域，其中在所述多波长光之中，响应于第一选择信号，第一波长光被反射到所述增益区域; 第二反射区域，其中在多波长光中，第二波长光被反射到增益区域; 以及相位控制区域，其中所述第二波长光的相位响应于相位控制信号而移位，所述相位控制区域设置在所述第一反射层和所述第二反射层之间。

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