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    • 3. 发明授权
    • Method of fabricating avalanche photodiode
    • 制造雪崩光电二极管的方法
    • US08592247B2
    • 2013-11-26
    • US13273257
    • 2011-10-14
    • Jae Sik SimKi Soo KimBong Ki MheenMyoung Sook OhYong Hwan KwonEun Soo Nam
    • Jae Sik SimKi Soo KimBong Ki MheenMyoung Sook OhYong Hwan KwonEun Soo Nam
    • H01L21/00
    • H01L31/107H01L31/184Y02E10/544
    • A method includes: forming an epitaxy wafer by growing a light absorbing layer, a grading layer, an electric field buffer layer, and an amplifying layer on the front surface of a substrate in sequence; forming a diffusion control layer on the amplifying layer; forming a protective layer for protecting the diffusion control layer on the diffusion control layer; forming an etching part by etching from the protective layer to a predetermined depth of the amplifying layer; forming a first patterning part by patterning the protective layer; forming a junction region and a guardring region at the amplifying layer by diffusing a diffusion material to the etching part and the first patterning part; removing the diffusion control layer and the protective layer and forming a first electrode connected to the junction region on the amplifying layer; and forming a second electrode on the rear surface of the substrate.
    • 一种方法包括:依次在衬底表面上生长光吸收层,分级层,电场缓冲层和放大层,形成外延晶片; 在放大层上形成扩散控制层; 形成用于保护扩散控制层上的扩散控制层的保护层; 通过从保护层蚀刻到放大层的预定深度来形成蚀刻部分; 通过图案化所述保护层来形成第一图案形成部分; 通过使扩散材料扩散到所述蚀刻部分和所述第一图案形成部分,在所述放大层处形成接合区域和保护区域; 去除扩散控制层和保护层,并形成连接到放大层上的结区的第一电极; 以及在所述基板的后表面上形成第二电极。
    • 4. 发明申请
    • OPTICAL HYBRID MODULE
    • 光学混合模块
    • US20080285978A1
    • 2008-11-20
    • US12053694
    • 2008-03-24
    • Kwang Seong ChoiYong Duck ChungJae Sik SimJong Tae MoonHyun Kyu YuJe Ha Kim
    • Kwang Seong ChoiYong Duck ChungJae Sik SimJong Tae MoonHyun Kyu YuJe Ha Kim
    • H04B10/00
    • H04B10/25752H01L2224/45147H01L2224/48091H01L2924/00014
    • Provided is an optical hybrid module in which an optical device, a filter, an amplifier and an antenna are hybrid-integrated, which includes: a silicon optical bench disposed on a substrate and having an optical fiber and an optical device; an amplifier disposed on the substrate and connected to the optical device disposed on the silicon optical bench to amplify a signal transmitted from the optical device; and an antenna disposed on the substrate to be connected to the amplifier and transmitting a signal amplified by the amplifier. Thus, a foot-print module may be embodied by disposing an antenna and a filter on a single- or multi-layer substrate and providing a bias required for the optical device and the amplifier through a solder ball. Also, due to the antenna and filter disposed on the substrate, an expensive connector is not needed, and thus a production costs can be reduced.
    • 提供了一种光混合模块,其中光学装置,滤波器,放大器和天线是混合集成的,其包括:设置在基板上并具有光纤和光学装置的硅光学台; 放大器,设置在所述基板上并连接到设置在所述硅光学台上的所述光学装置,以放大从所述光学装置发送的信号; 以及设置在所述基板上以连接到所述放大器并且发射由所述放大器放大的信号的天线。 因此,可以通过在单层或多层衬底上设置天线和滤波器并通过焊球提供光学器件和放大器所需的偏置来实现脚印模块。 此外,由于设置在基板上的天线和滤波器,不需要昂贵的连接器,因此可以降低生产成本。
    • 5. 发明授权
    • Shared photodiode image sensor
    • 共享光电二极管图像传感器
    • US08338868B2
    • 2012-12-25
    • US12626343
    • 2009-11-25
    • Bong Ki MheenAlbert J. P. TheuwissenJae Sik SimMi Ran ParkYong Hwan KwonEun Soo Nam
    • Bong Ki MheenAlbert J. P. TheuwissenJae Sik SimMi Ran ParkYong Hwan KwonEun Soo Nam
    • H01L31/062H01L31/113
    • H01L27/14603H01L27/14609H01L27/1463H01L27/14641
    • An image sensor with a shared photodiode is provided. The image sensor includes at least two unit pixels, each of which includes a photodiode, a diffusion region which gathers electrons from the photodiode, a transfer transistor which connects the photodiode with the diffusion region, and a readout circuit which reads out a signal from the diffusion region. Photodiodes of neighboring unit pixels are disposed symmetrically to be adjacent to one another to form a shared photodiode. The image sensor does not have a STI region which causes a dark current restricting its performance and does not require a basic minimum design factor (a distance or an area) related to a STI region. A region corresponding to a STI region may be used as a region of a photodiode or for additional pixel scaling. Therefore, a limitation in scaling of a photodiode is overcome, and pixel performance is improved in spite of pixel scaling.
    • 提供具有共享光电二极管的图像传感器。 图像传感器包括至少两个单位像素,每个单元像素包括光电二极管,从光电二极管收集电子的扩散区域,连接光电二极管与扩散区域的传输晶体管,以及读出电路, 扩散区。 相邻单位像素的光电二极管彼此对称设置以形成共用光电二极管。 图像传感器不具有导致暗电流限制其性能的STI区域,并且不需要与STI区域相关的基本最小设计因子(距离或面积)。 可以将对应于STI区域的区域用作光电二极管的区域或用于附加像素缩放。 因此,克服了光电二极管的缩放的限制,并且尽管像素缩放来提高像素性能。
    • 6. 发明授权
    • Device and method for separation/conversion of multiband signal
    • 用于分离/转换多频段信号的装置和方法
    • US08335200B2
    • 2012-12-18
    • US12676749
    • 2008-05-23
    • Yong Duck ChungKwang Seong ChoiJae Sik SimYong Hwan KwonSung Bok KimJe Ha Kim
    • Yong Duck ChungKwang Seong ChoiJae Sik SimYong Hwan KwonSung Bok KimJe Ha Kim
    • H04H1/00
    • H04B10/25759H04W88/10
    • Provided are a method and device for separating and converting multiband signals. The device includes a photoelectric converter for converting an externally received optical signal into an electrical signal, a first switch for separating the converted electrical signal into signals according to frequency bands, a first mobile communication band-pass amplifier for amplifying a mobile communication network signal of the signals separated by the first switch, a broadband up-converter for up-converting a baseband signal of the signals separated by the first switch into a broadband signal, a first broadband amplifier for amplifying the broadband signal output from the broadband up-converter, and a transmitter for wirelessly transmitting the signals amplified by the first mobile communication band-pass amplifier and the first broadband amplifier.
    • 提供了用于分离和转换多频带信号的方法和装置。 该装置包括用于将外部接收的光信号转换为电信号的光电转换器,用于根据频带将转换后的电信号分离为信号的第一开关,用于放大移动通信网络信号的第一移动通信带通放大器 由第一开关分离的信号,用于将由第一开关分离的信号的基带信号上变频为宽带信号的宽带上变频器,用于放大从宽带上变频器输出的宽带信号的第一宽带放大器, 以及用于无线地发送由第一移动通信带通放大器和第一宽带放大器放大的信号的发射机。
    • 7. 发明申请
    • SHARED PHOTODIODE IMAGE SENSOR
    • 共享光电图像传感器
    • US20100133590A1
    • 2010-06-03
    • US12626343
    • 2009-11-25
    • Bong Ki MheenAlbert J. P. TheuwissenJae Sik SimMi Ran ParkYong Hwan KwonEun Soo Nam
    • Bong Ki MheenAlbert J. P. TheuwissenJae Sik SimMi Ran ParkYong Hwan KwonEun Soo Nam
    • H01L31/14
    • H01L27/14603H01L27/14609H01L27/1463H01L27/14641
    • An image sensor with a shared photodiode is provided. The image sensor includes at least two unit pixels, each of which includes a photodiode, a diffusion region which gathers electrons from the photodiode, a transfer transistor which connects the photodiode with the diffusion region, and a readout circuit which reads out a signal from the diffusion region. Photodiodes of neighboring unit pixels are disposed symmetrically to be adjacent to one another to form a shared photodiode. The image sensor does not have a STI region which causes a dark current restricting its performance and does not require a basic minimum design factor (a distance or an area) related to a STI region. A region corresponding to a STI region may be used as a region of a photodiode or for additional pixel scaling. Therefore, a limitation in scaling of a photodiode is overcome, and pixel performance is improved in spite of pixel scaling.
    • 提供具有共享光电二极管的图像传感器。 图像传感器包括至少两个单位像素,每个单元像素包括光电二极管,从光电二极管收集电子的扩散区域,连接光电二极管与扩散区域的传输晶体管,以及读出电路, 扩散区。 相邻单位像素的光电二极管彼此对称设置以形成共用光电二极管。 图像传感器不具有导致暗电流限制其性能的STI区域,并且不需要与STI区域相关的基本最小设计因子(距离或面积)。 可以将对应于STI区域的区域用作光电二极管的区域或用于附加像素缩放。 因此,克服了光电二极管的缩放的限制,并且尽管像素缩放来提高像素性能。