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1. 发明授权

US07938975B2 Method for making a micro-fluid ejection device 有权
标题翻译：制造微流体喷射装置的方法
公开(公告)号：US07938975B2
公开(公告)日：2011-05-10
申请号：US11780234
申请日：2007-07-19
申请人： John W. Krawczyk , James M. Mrvos , Girish S. Patil , Jason T. Vanderpool , Brian C. Hart , Christopher J. Money , Jeanne M. Saldanha Singh , Karthik Vaideeswaran
发明人： John W. Krawczyk , James M. Mrvos , Girish S. Patil , Jason T. Vanderpool , Brian C. Hart , Christopher J. Money , Jeanne M. Saldanha Singh , Karthik Vaideeswaran
IPC分类号： G11B5/127
CPC分类号： B41J2/1603 , B41J2/1628 , B41J2/1631 , B41J2/1645 , B81B2201/052 , B81C1/00531
摘要： A method of etching a semiconductor substrate. The method includes the steps of applying a photoresist etch mask layer to a device surface of the substrate. A select first area of the photoresist etch mask is masked, imaged and developed. A select second area of the photoresist etch mask layer is irradiated to assist in post etch stripping of the etch mask layer from the select second area. The substrate is etched to form fluid supply slots through a thickness of the substrate. At least the select second area of the etch mask layer is removed from the substrate, whereby mask layer residue formed from the select second area of the etch mask layer is significantly reduced.
摘要翻译：蚀刻半导体衬底的方法。该方法包括以下步骤：将光致抗蚀剂蚀刻掩模层施加到衬底的器件表面。光刻胶蚀刻掩模的选择第一区被掩蔽，成像和显影。照射光致抗蚀剂蚀刻掩模层的选择的第二区域以辅助蚀刻掩模层从选择的第二区域的后蚀刻剥离。蚀刻基板以形成通过基板的厚度的流体供给槽。至少蚀刻掩模层的选择第二区域从衬底去除，由此从蚀刻掩模层的选择的第二区域形成的掩模层残留物显着减少。

2. 发明授权

US07271105B2 Method for making a micro-fluid ejection device 有权
标题翻译：制造微流体喷射装置的方法
公开(公告)号：US07271105B2
公开(公告)日：2007-09-18
申请号：US10941404
申请日：2004-09-15
申请人： John W. Krawczyk , James M. Mrvos , Girish S. Patil , Jason T. Vanderpool , Brian C. Hart , Christopher J. Money , Jeanne M. Saldanha Singh , Karthik Vaideeswaran
发明人： John W. Krawczyk , James M. Mrvos , Girish S. Patil , Jason T. Vanderpool , Brian C. Hart , Christopher J. Money , Jeanne M. Saldanha Singh , Karthik Vaideeswaran
IPC分类号： H01L21/461
CPC分类号： B41J2/1603 , B41J2/1628 , B41J2/1631 , B41J2/1645 , B81B2201/052 , B81C1/00531
摘要： A method of etching a semiconductor substrate. The method includes the steps of applying a photoresist etch mask layer to a device surface of the substrate. A select first area of the photoresist etch mask is masked, imaged and developed. A select second area of the photoresist etch mask layer is irradiated to assist in post etch stripping of the etch mask layer from the select second area. The substrate is etched to form fluid supply slots through a thickness of the substrate. At least the select second area of the etch mask layer is removed from the substrate, whereby mask layer residue formed from the select second area of the etch mask layer is significantly reduced.
摘要翻译：蚀刻半导体衬底的方法。该方法包括以下步骤：将光致抗蚀剂蚀刻掩模层施加到衬底的器件表面。光刻胶蚀刻掩模的选择第一区被掩蔽，成像和显影。照射光致抗蚀剂蚀刻掩模层的选择的第二区域以辅助蚀刻掩模层从选择的第二区域的后蚀刻剥离。蚀刻基板以形成通过基板的厚度的流体供给槽。至少蚀刻掩模层的选择第二区域从衬底去除，由此从蚀刻掩模层的选择的第二区域形成的掩模层残留物显着减少。

3. 发明授权

US07041226B2 Methods for improving flow through fluidic channels 有权
标题翻译：改善通过流体通道流动的方法
公开(公告)号：US07041226B2
公开(公告)日：2006-05-09
申请号：US10701225
申请日：2003-11-04
申请人： Karthik Vaideeswaran , Andrew L. McNees , John W. Krawczyk , James M. Mrvos , Cory N. Hammond , Mark L. Doerre , Jason T. Vanderpool , Girish S. Patil , Christopher J. Money , Gary R. Williams , Richard L. Warner
发明人： Karthik Vaideeswaran , Andrew L. McNees , John W. Krawczyk , James M. Mrvos , Cory N. Hammond , Mark L. Doerre , Jason T. Vanderpool , Girish S. Patil , Christopher J. Money , Gary R. Williams , Richard L. Warner
IPC分类号： G01D15/00 , H01L21/00
CPC分类号： B41J2/1632 , B41J2/14145 , B41J2/1603 , B41J2/1623 , B41J2/1628 , B41J2/1631 , B41J2/1645 , B41J2/1646
摘要： A method for improving fluidic flow for a microfluidic device having a through hole or slot therein. The method includes the steps of forming one or more openings through at least part of a thickness of a substrate from a first surface to an opposite second surface using a reactive ion etching process whereby an etch stop layer is applied to side wall surfaces in the one or more openings during alternating etching and passivating steps as the openings are etched through at least a portion of the substrate. Substantially all of the etch stop layer coating is removed from the side wall surfaces by treating the side wall surfaces using a method selected from chemical treatment and mechanical treatment, whereby a surface energy of the treated side wall surfaces is increased relative to a surface energy of the side wall surfaces containing the etch stop layer coating.
摘要翻译：一种用于改善其中具有通孔或槽的微流体装置的流体流动的方法。该方法包括以下步骤：使用反应离子蚀刻工艺从基板的第一表面至相对的第二表面形成穿过衬底的至少一部分厚度的一个或多个开口，由此将蚀刻停止层施加到一个侧壁表面或者在交替蚀刻和钝化步骤期间，当开口被蚀刻通过衬底的至少一部分时，可以有更多的开口。通过使用选自化学处理和机械处理的方法处理侧壁表面，从侧壁表面去除基本上所有的蚀刻停止层涂层，由此所处理的侧壁表面的表面能相对于所述侧壁表面包含所述蚀刻停止层涂层。

4. 发明授权

US07438392B2 Microfluidic substrates having improved fluidic channels 有权
标题翻译：具有改进的流体通道的微流体基底
公开(公告)号：US07438392B2
公开(公告)日：2008-10-21
申请号：US11281090
申请日：2005-11-17
申请人： Karthik Vaideeswaran , Andrew L. McNees , John W. Krawczyk , James M. Mrvos , Mark L. Doerre , Jason T. Vanderpool , Girish S. Patil , Richard L. Warner
发明人： Karthik Vaideeswaran , Andrew L. McNees , John W. Krawczyk , James M. Mrvos , Mark L. Doerre , Jason T. Vanderpool , Girish S. Patil , Richard L. Warner
IPC分类号： B41J2/05
CPC分类号： B41J2/1632 , B41J2/14145 , B41J2/1603 , B41J2/1623 , B41J2/1628 , B41J2/1631 , B41J2/1645 , B41J2/1646
摘要： A method for improving fluidic flow for a microfluidic device having a through hole or slot therein. The method includes the steps of forming one or more openings through at least part of a thickness of a substrate from a first surface to an opposite second surface using a reactive ion etching process whereby an etch stop layer is applied to side wall surfaces in the one or more openings during alternating etching and passivating steps as the openings are etched through at least a portion of the substrate. Substantially all of the etch stop layer coating is removed from the side wall surfaces by treating the side wall surfaces using a method selected from chemical treatment and mechanical treatment, whereby a surface energy of the treated side wall surfaces is increased relative to a surface energy of the side wall surfaces containing the etch stop layer coating.
摘要翻译：一种用于改善其中具有通孔或槽的微流体装置的流体流动的方法。该方法包括以下步骤：使用反应离子蚀刻工艺从基板的第一表面至相对的第二表面形成穿过衬底的至少一部分厚度的一个或多个开口，由此将蚀刻停止层施加到一个侧壁表面或者在交替蚀刻和钝化步骤期间，当开口被蚀刻通过衬底的至少一部分时，可以有更多的开口。通过使用选自化学处理和机械处理的方法处理侧壁表面，从侧壁表面去除基本上所有的蚀刻停止层涂层，由此所处理的侧壁表面的表面能相对于所述侧壁表面包含所述蚀刻停止层涂层。

5. 发明授权

US07368396B2 Dry etching methods 有权
标题翻译：干蚀刻方法
公开(公告)号：US07368396B2
公开(公告)日：2008-05-06
申请号：US11173395
申请日：2005-07-01
申请人： James M. Mrvos , Girish S. Patil , Karthik Vaideeswaran
发明人： James M. Mrvos , Girish S. Patil , Karthik Vaideeswaran
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： B81C1/00531 , B81C2201/0132 , H01J37/321 , H01L21/30655 , H01L21/3081
摘要： A process for etching semiconductor substrates using a deep reactive ion etching process to produce through holes or slots (referred to collectively as “slots”) in the substrates. The process includes applying a first layer to a first surface of substrate to provide an etch mask material layer on the first surface of the substrate. A second layer is applied to a second surface of the substrate to provide an etch stop material layer on the second surface of the substrate. The first layer and the second layer have similar solubilities in one or more organic solvents. The substrate is etched from the first surface of the wafers to provide a slot in the substrate. After etching the substrate, the etch mask material layer and the etch stop material layer are removed by contacting the first surface and the second surface of the substrate with a single organic solvent.
摘要翻译：使用深反应离子蚀刻工艺蚀刻半导体衬底以在衬底中产生通孔或槽（统称为“槽”）的工艺。该方法包括将第一层施加到衬底的第一表面以在衬底的第一表面上提供蚀刻掩模材料层。将第二层施加到衬底的第二表面，以在衬底的第二表面上提供蚀刻停止材料层。第一层和第二层在一种或多种有机溶剂中具有类似的溶解度。从晶片的第一表面蚀刻衬底以在衬底中提供槽。在蚀刻基板之后，通过用单一有机溶剂接触基板的第一表面和第二表面来去除蚀刻掩模材料层和蚀刻停止材料层。

6. 发明授权

US07423073B2 Radiation curable compositions having improved flexibility 有权
标题翻译：具有改善柔性的可辐射固化组合物
公开(公告)号：US07423073B2
公开(公告)日：2008-09-09
申请号：US10995806
申请日：2004-11-23
申请人： James M. Mrvos , Girish S. Patil , Karthik Vaideeswaran
发明人： James M. Mrvos , Girish S. Patil , Karthik Vaideeswaran
IPC分类号： C08F2/46 , C08F2/50 , C08J3/28 , B41J2/135 , B41J2/16
CPC分类号： C08G59/68 , B41J2/1603 , B41J2/1637 , C08L63/00 , G03F7/038
摘要： A radiation curable resin composition having improved flexibility. The radiation curable composition having from about 5 to about 50 weight percent of a difunctional polymeric compound; from about 1 to about 10 weight percent of a photoinitiator; from about 1 to about 10 weight percent of a flexibilizer agent, wherein the flexibilizer agent has a molecular weight ranging from about 400 to about 10,000; and about 30 to about 90 weight percent of the non-photoreactive solvent, wherein the weight percents are based on the total weight of the resin composition. Ink jet print heads and ink jet printing apparatusess comprising ink jet print heads utilizing the radiation curable resin compositions are also included.
摘要翻译：一种具有改善柔性的辐射固化树脂组合物。所述可辐射固化组合物具有约5至约50重量％的双官能聚合物; 约1至约10重量％的光引发剂; 约1至约10重量％的增韧剂，其中所述增韧剂的分子量范围为约400至约10,000; 和约30至约90重量％的非光反应性溶剂，其中重量百分比基于树脂组合物的总重量。还包括使用该辐射固化树脂组合物的喷墨打印头和喷墨打印设备，包括喷墨打印头。

7. 发明授权

US07560039B2 Methods of deep reactive ion etching 失效
标题翻译：深反应离子蚀刻方法
公开(公告)号：US07560039B2
公开(公告)日：2009-07-14
申请号：US10938009
申请日：2004-09-10
申请人： John W. Krawczyk , Andrew L. McNees , James M. Mrvos
发明人： John W. Krawczyk , Andrew L. McNees , James M. Mrvos
IPC分类号： B41J2/16
CPC分类号： B41J2/1631 , B41J2/1603 , B41J2/1628
摘要： A method of substantially simultaneously forming at least two fluid supply slots through a thickness of semiconductor substrate from a first surface to a second surface thereof. The method includes the steps of applying a photoresist layer to the first surface of the semiconductor substrate. The photoresist layer is patterned and developed using a gray scale mask for a first fluid supply slot. The semiconductor substrate is then reactive ion etched, to form the at least two fluid supply slots through the thickness of the substrate. The first fluid supply slot is substantially wider than the second fluid supply slot, and the first and second fluid supply slots are etched through the substrate at substantially the same rate.
摘要翻译：一种从其第一表面到第二表面基本上同时形成通过半导体衬底的厚度的至少两个流体供给槽的方法。该方法包括以下步骤：将光致抗蚀剂层施加到半导体衬底的第一表面。使用用于第一流体供应槽的灰度掩模对光致抗蚀剂层进行图案化和显影。然后对半导体衬底进行反应离子蚀刻，以形成通过衬底厚度的至少两个流体供给槽。第一流体供应槽基本上比第二流体供应槽宽，并且第一和第二流体供应槽以基本上相同的速率被蚀刻穿过基板。

8. 发明授权

US07560223B2 Fluid ejection device structures and methods therefor 失效
标题翻译：流体喷射装置结构及其方法
公开(公告)号：US07560223B2
公开(公告)日：2009-07-14
申请号：US11026353
申请日：2004-12-30
申请人： John W. Krawczyk , Andrew L. McNees , James M. Mrvos , David L. Bernard
发明人： John W. Krawczyk , Andrew L. McNees , James M. Mrvos , David L. Bernard
IPC分类号： B41J2/16
CPC分类号： B41J2/1603 , B41J2/1628 , B41J2/1631 , G01D15/00
摘要： Methods of forming a fluid channel in a semiconductor substrate may include providing a semiconductor substrate having a backside and a device side, wherein the device side is configured to secure ink ejecting devices thereon and applying a material layer to the backside of the semiconductor substrate. The method may further include providing a gray scale mask configured with a pattern corresponding to a fluid channel having a plurality of slots, exposing the material layer to sufficient light radiation energy through the gray scale mask and etching the exposed material layer and the semiconductor substrate through to the device side of the semiconductor substrate.
摘要翻译：在半导体衬底中形成流体通道的方法可以包括提供具有背面和器件侧的半导体衬底，其中器件侧被配置为在其上固定墨水喷射装置，并将材料层施加到半导体衬底的背面。该方法还可以包括提供一个配置有与具有多个槽的流体通道相对应的图案的灰度掩模，该材料层通过灰度级掩模暴露于足够的光辐射能量，并通过暴露的材料层和半导体衬底到半导体衬底的器件侧。

9. 发明授权

US5562762A Jet ink with amine surfactant 失效
标题翻译：具有胺表面活性剂的喷墨
公开(公告)号：US5562762A
公开(公告)日：1996-10-08
申请号：US442596
申请日：1995-05-17
申请人： James M. Mrvos , Ann M. Piekunka , Richard B. Watkins
发明人： James M. Mrvos , Ann M. Piekunka , Richard B. Watkins
IPC分类号： C09D11/00 , C09D11/02
CPC分类号： C09D11/38
摘要： An aqueous jet ink of water, dissolved dyes and a surfactant of R--N(C.sub.2 H.sub.4 O).sub.x (C.sub.2 H.sub.4 O).sub.y H, where x+y is from 5 to 25, with x and y each at least 2, and R is alkyl or oxygen containing. The static surface tension is less than 40 dynes/cm while the dynamic surface tension is about 65 dynes/cm. Satellites and splatter in thermal drop on demand printing are greatly reduced, and drop misdirection is reduced.
摘要翻译：水，水溶性染料和R-N（C 2 H 4 O）x（C 2 H 4 O）y H表面活性剂的水性喷墨油墨，其中x + y为5至25，x和y各自至少为2，R为烷基或含氧。静态表面张力小于40达因/厘米，动态表面张力约为65达因/厘米。卫星和飞溅的热降点击打印大大减少，并且降低误差方向。

10. 发明授权

US5084333A Fabric printer ribbon with nigrosine ink 失效
标题翻译：织物印花布与尼罗河墨水
公开(公告)号：US5084333A
公开(公告)日：1992-01-28
申请号：US481412
申请日：1990-02-16
申请人： Bradley L. Beach , Matthew D. Clift , Terence E. Franey , James M. Mrvos , Ann M. Piekunka , Agnes K. Zimmer
发明人： Bradley L. Beach , Matthew D. Clift , Terence E. Franey , James M. Mrvos , Ann M. Piekunka , Agnes K. Zimmer
IPC分类号： B41J31/00 , B41J31/02 , B41J31/04 , C09D11/06
CPC分类号： C09D11/06 , B41J31/02 , Y10T442/2008 , Y10T442/2893
摘要： A printer ribbon having nigrosine dye with hydroxide counter ion, preferably at 23% by weight, in an oleic acid vehicle to form an ink saturating a fabric. The ribbon has the long life of a dye-only fabric ribbon and is effective for both correspondence and bar code applications.

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