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1. 发明授权

US07938975B2 Method for making a micro-fluid ejection device 有权
标题翻译：制造微流体喷射装置的方法
公开(公告)号：US07938975B2
公开(公告)日：2011-05-10
申请号：US11780234
申请日：2007-07-19
申请人： John W. Krawczyk , James M. Mrvos , Girish S. Patil , Jason T. Vanderpool , Brian C. Hart , Christopher J. Money , Jeanne M. Saldanha Singh , Karthik Vaideeswaran
发明人： John W. Krawczyk , James M. Mrvos , Girish S. Patil , Jason T. Vanderpool , Brian C. Hart , Christopher J. Money , Jeanne M. Saldanha Singh , Karthik Vaideeswaran
IPC分类号： G11B5/127
CPC分类号： B41J2/1603 , B41J2/1628 , B41J2/1631 , B41J2/1645 , B81B2201/052 , B81C1/00531
摘要： A method of etching a semiconductor substrate. The method includes the steps of applying a photoresist etch mask layer to a device surface of the substrate. A select first area of the photoresist etch mask is masked, imaged and developed. A select second area of the photoresist etch mask layer is irradiated to assist in post etch stripping of the etch mask layer from the select second area. The substrate is etched to form fluid supply slots through a thickness of the substrate. At least the select second area of the etch mask layer is removed from the substrate, whereby mask layer residue formed from the select second area of the etch mask layer is significantly reduced.
摘要翻译：蚀刻半导体衬底的方法。该方法包括以下步骤：将光致抗蚀剂蚀刻掩模层施加到衬底的器件表面。光刻胶蚀刻掩模的选择第一区被掩蔽，成像和显影。照射光致抗蚀剂蚀刻掩模层的选择的第二区域以辅助蚀刻掩模层从选择的第二区域的后蚀刻剥离。蚀刻基板以形成通过基板的厚度的流体供给槽。至少蚀刻掩模层的选择第二区域从衬底去除，由此从蚀刻掩模层的选择的第二区域形成的掩模层残留物显着减少。

2. 发明授权

US07368396B2 Dry etching methods 有权
标题翻译：干蚀刻方法
公开(公告)号：US07368396B2
公开(公告)日：2008-05-06
申请号：US11173395
申请日：2005-07-01
申请人： James M. Mrvos , Girish S. Patil , Karthik Vaideeswaran
发明人： James M. Mrvos , Girish S. Patil , Karthik Vaideeswaran
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： B81C1/00531 , B81C2201/0132 , H01J37/321 , H01L21/30655 , H01L21/3081
摘要： A process for etching semiconductor substrates using a deep reactive ion etching process to produce through holes or slots (referred to collectively as “slots”) in the substrates. The process includes applying a first layer to a first surface of substrate to provide an etch mask material layer on the first surface of the substrate. A second layer is applied to a second surface of the substrate to provide an etch stop material layer on the second surface of the substrate. The first layer and the second layer have similar solubilities in one or more organic solvents. The substrate is etched from the first surface of the wafers to provide a slot in the substrate. After etching the substrate, the etch mask material layer and the etch stop material layer are removed by contacting the first surface and the second surface of the substrate with a single organic solvent.
摘要翻译：使用深反应离子蚀刻工艺蚀刻半导体衬底以在衬底中产生通孔或槽（统称为“槽”）的工艺。该方法包括将第一层施加到衬底的第一表面以在衬底的第一表面上提供蚀刻掩模材料层。将第二层施加到衬底的第二表面，以在衬底的第二表面上提供蚀刻停止材料层。第一层和第二层在一种或多种有机溶剂中具有类似的溶解度。从晶片的第一表面蚀刻衬底以在衬底中提供槽。在蚀刻基板之后，通过用单一有机溶剂接触基板的第一表面和第二表面来去除蚀刻掩模材料层和蚀刻停止材料层。

3. 发明授权

US07041226B2 Methods for improving flow through fluidic channels 有权
标题翻译：改善通过流体通道流动的方法
公开(公告)号：US07041226B2
公开(公告)日：2006-05-09
申请号：US10701225
申请日：2003-11-04
申请人： Karthik Vaideeswaran , Andrew L. McNees , John W. Krawczyk , James M. Mrvos , Cory N. Hammond , Mark L. Doerre , Jason T. Vanderpool , Girish S. Patil , Christopher J. Money , Gary R. Williams , Richard L. Warner
发明人： Karthik Vaideeswaran , Andrew L. McNees , John W. Krawczyk , James M. Mrvos , Cory N. Hammond , Mark L. Doerre , Jason T. Vanderpool , Girish S. Patil , Christopher J. Money , Gary R. Williams , Richard L. Warner
IPC分类号： G01D15/00 , H01L21/00
CPC分类号： B41J2/1632 , B41J2/14145 , B41J2/1603 , B41J2/1623 , B41J2/1628 , B41J2/1631 , B41J2/1645 , B41J2/1646
摘要： A method for improving fluidic flow for a microfluidic device having a through hole or slot therein. The method includes the steps of forming one or more openings through at least part of a thickness of a substrate from a first surface to an opposite second surface using a reactive ion etching process whereby an etch stop layer is applied to side wall surfaces in the one or more openings during alternating etching and passivating steps as the openings are etched through at least a portion of the substrate. Substantially all of the etch stop layer coating is removed from the side wall surfaces by treating the side wall surfaces using a method selected from chemical treatment and mechanical treatment, whereby a surface energy of the treated side wall surfaces is increased relative to a surface energy of the side wall surfaces containing the etch stop layer coating.
摘要翻译：一种用于改善其中具有通孔或槽的微流体装置的流体流动的方法。该方法包括以下步骤：使用反应离子蚀刻工艺从基板的第一表面至相对的第二表面形成穿过衬底的至少一部分厚度的一个或多个开口，由此将蚀刻停止层施加到一个侧壁表面或者在交替蚀刻和钝化步骤期间，当开口被蚀刻通过衬底的至少一部分时，可以有更多的开口。通过使用选自化学处理和机械处理的方法处理侧壁表面，从侧壁表面去除基本上所有的蚀刻停止层涂层，由此所处理的侧壁表面的表面能相对于所述侧壁表面包含所述蚀刻停止层涂层。

4. 发明授权

US07423073B2 Radiation curable compositions having improved flexibility 有权
标题翻译：具有改善柔性的可辐射固化组合物
公开(公告)号：US07423073B2
公开(公告)日：2008-09-09
申请号：US10995806
申请日：2004-11-23
申请人： James M. Mrvos , Girish S. Patil , Karthik Vaideeswaran
发明人： James M. Mrvos , Girish S. Patil , Karthik Vaideeswaran
IPC分类号： C08F2/46 , C08F2/50 , C08J3/28 , B41J2/135 , B41J2/16
CPC分类号： C08G59/68 , B41J2/1603 , B41J2/1637 , C08L63/00 , G03F7/038
摘要： A radiation curable resin composition having improved flexibility. The radiation curable composition having from about 5 to about 50 weight percent of a difunctional polymeric compound; from about 1 to about 10 weight percent of a photoinitiator; from about 1 to about 10 weight percent of a flexibilizer agent, wherein the flexibilizer agent has a molecular weight ranging from about 400 to about 10,000; and about 30 to about 90 weight percent of the non-photoreactive solvent, wherein the weight percents are based on the total weight of the resin composition. Ink jet print heads and ink jet printing apparatusess comprising ink jet print heads utilizing the radiation curable resin compositions are also included.
摘要翻译：一种具有改善柔性的辐射固化树脂组合物。所述可辐射固化组合物具有约5至约50重量％的双官能聚合物; 约1至约10重量％的光引发剂; 约1至约10重量％的增韧剂，其中所述增韧剂的分子量范围为约400至约10,000; 和约30至约90重量％的非光反应性溶剂，其中重量百分比基于树脂组合物的总重量。还包括使用该辐射固化树脂组合物的喷墨打印头和喷墨打印设备，包括喷墨打印头。

5. 发明授权

US07271105B2 Method for making a micro-fluid ejection device 有权
标题翻译：制造微流体喷射装置的方法
公开(公告)号：US07271105B2
公开(公告)日：2007-09-18
申请号：US10941404
申请日：2004-09-15
申请人： John W. Krawczyk , James M. Mrvos , Girish S. Patil , Jason T. Vanderpool , Brian C. Hart , Christopher J. Money , Jeanne M. Saldanha Singh , Karthik Vaideeswaran
发明人： John W. Krawczyk , James M. Mrvos , Girish S. Patil , Jason T. Vanderpool , Brian C. Hart , Christopher J. Money , Jeanne M. Saldanha Singh , Karthik Vaideeswaran
IPC分类号： H01L21/461
CPC分类号： B41J2/1603 , B41J2/1628 , B41J2/1631 , B41J2/1645 , B81B2201/052 , B81C1/00531
摘要： A method of etching a semiconductor substrate. The method includes the steps of applying a photoresist etch mask layer to a device surface of the substrate. A select first area of the photoresist etch mask is masked, imaged and developed. A select second area of the photoresist etch mask layer is irradiated to assist in post etch stripping of the etch mask layer from the select second area. The substrate is etched to form fluid supply slots through a thickness of the substrate. At least the select second area of the etch mask layer is removed from the substrate, whereby mask layer residue formed from the select second area of the etch mask layer is significantly reduced.
摘要翻译：蚀刻半导体衬底的方法。该方法包括以下步骤：将光致抗蚀剂蚀刻掩模层施加到衬底的器件表面。光刻胶蚀刻掩模的选择第一区被掩蔽，成像和显影。照射光致抗蚀剂蚀刻掩模层的选择的第二区域以辅助蚀刻掩模层从选择的第二区域的后蚀刻剥离。蚀刻基板以形成通过基板的厚度的流体供给槽。至少蚀刻掩模层的选择第二区域从衬底去除，由此从蚀刻掩模层的选择的第二区域形成的掩模层残留物显着减少。

6. 发明授权

US07438392B2 Microfluidic substrates having improved fluidic channels 有权
标题翻译：具有改进的流体通道的微流体基底
公开(公告)号：US07438392B2
公开(公告)日：2008-10-21
申请号：US11281090
申请日：2005-11-17
申请人： Karthik Vaideeswaran , Andrew L. McNees , John W. Krawczyk , James M. Mrvos , Mark L. Doerre , Jason T. Vanderpool , Girish S. Patil , Richard L. Warner
发明人： Karthik Vaideeswaran , Andrew L. McNees , John W. Krawczyk , James M. Mrvos , Mark L. Doerre , Jason T. Vanderpool , Girish S. Patil , Richard L. Warner
IPC分类号： B41J2/05
CPC分类号： B41J2/1632 , B41J2/14145 , B41J2/1603 , B41J2/1623 , B41J2/1628 , B41J2/1631 , B41J2/1645 , B41J2/1646
摘要： A method for improving fluidic flow for a microfluidic device having a through hole or slot therein. The method includes the steps of forming one or more openings through at least part of a thickness of a substrate from a first surface to an opposite second surface using a reactive ion etching process whereby an etch stop layer is applied to side wall surfaces in the one or more openings during alternating etching and passivating steps as the openings are etched through at least a portion of the substrate. Substantially all of the etch stop layer coating is removed from the side wall surfaces by treating the side wall surfaces using a method selected from chemical treatment and mechanical treatment, whereby a surface energy of the treated side wall surfaces is increased relative to a surface energy of the side wall surfaces containing the etch stop layer coating.
摘要翻译：一种用于改善其中具有通孔或槽的微流体装置的流体流动的方法。该方法包括以下步骤：使用反应离子蚀刻工艺从基板的第一表面至相对的第二表面形成穿过衬底的至少一部分厚度的一个或多个开口，由此将蚀刻停止层施加到一个侧壁表面或者在交替蚀刻和钝化步骤期间，当开口被蚀刻通过衬底的至少一部分时，可以有更多的开口。通过使用选自化学处理和机械处理的方法处理侧壁表面，从侧壁表面去除基本上所有的蚀刻停止层涂层，由此所处理的侧壁表面的表面能相对于所述侧壁表面包含所述蚀刻停止层涂层。

7. 发明授权

US07344994B2 Multiple layer etch stop and etching method 有权
标题翻译：多层蚀刻停止和蚀刻方法
公开(公告)号：US07344994B2
公开(公告)日：2008-03-18
申请号：US11063108
申请日：2005-02-22
申请人： John W. Krawczyk , Andrew L. McNees , Christopher J. Money , Girish S. Patil , David B. Rhine , Karthik Vaideeswaran
发明人： John W. Krawczyk , Andrew L. McNees , Christopher J. Money , Girish S. Patil , David B. Rhine , Karthik Vaideeswaran
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/0332 , B81B2203/0353 , B81C1/00531 , B81C1/00619 , B81C2201/0132 , B81C2201/014 , H01L21/0334 , H01L21/3081 , H01L21/3083
摘要： A process for etching semiconductor substrates using a deep reactive ion etching process to produce through holes or slots (hereinafter “slots”) in the substrates. The process includes applying a first layer to a back side of a substrate as a first etch stop material. The first layer is a relatively soft etch stop material. A second layer is applied to the first layer on the back side of the substrate to provide a composite etch stop layer. The second layer is a relatively hard etch stop material. The substrate is etched from a side opposite the back side of the substrate to provide a slot in the substrate.
摘要翻译：使用深反应离子蚀刻工艺蚀刻半导体衬底以在衬底中产生通孔或槽（以下称为“槽”）的工艺。该方法包括将第一层作为第一蚀刻停止材料施加到衬底的背面。第一层是相对软的蚀刻停止材料。将第二层施加到衬底的背面上的第一层以提供复合蚀刻停止层。第二层是相对硬的蚀刻停止材料。从与衬底的背面相对的一侧蚀刻衬底，以在衬底中提供槽。

8. 发明授权

US07767103B2 Micro-fluid ejection assemblies 有权
标题翻译：微流体喷射组件
公开(公告)号：US07767103B2
公开(公告)日：2010-08-03
申请号：US10940917
申请日：2004-09-14
申请人： David L. Bernard , John W. Krawczyk , Christopher J. Money , Andrew L. McNees , Girish S. Patil , Karthik Vaideeswaran , Richard L. Warner
发明人： David L. Bernard , John W. Krawczyk , Christopher J. Money , Andrew L. McNees , Girish S. Patil , Karthik Vaideeswaran , Richard L. Warner
IPC分类号： G01D15/00 , B41J2/05
CPC分类号： B41J2/1603 , B41J2/14129 , B41J2/1628 , B41J2/1631 , B41J2/1642 , B41J2/1645 , B41J2/1646
摘要： A micro-fluid ejection assembly and method therefor. The micro-fluid ejection assembly includes a silicon substrate having a fluid supply slot therein. The fluid supply slot is formed by an etch process conducted on a substrate using, a first etch mask circumscribing the fluid supply slot, and a second etch mask applied over a functional layer on the substrate.
摘要翻译：微流体喷射组件及其方法。微流体喷射组件包括其中具有流体供应槽的硅衬底。流体供应槽由在衬底上进行的蚀刻工艺形成，使用限定流体供应槽的第一蚀刻掩模和施加在衬底上的功能层上的第二蚀刻掩模。

9. 发明申请

US20070259292A1 METHOD FOR MAKING A MICRO-FLUID EJECTION DEVICE 有权
标题翻译：制造微流体喷射装置的方法
公开(公告)号：US20070259292A1
公开(公告)日：2007-11-08
申请号：US11780234
申请日：2007-07-19
申请人： John Krawczyk , James Mrvos , Girish Patil , Jason Vanderpool , Brian Hart , Christopher Money , Jeanne Singh , Karthik Vaideeswaran
发明人： John Krawczyk , James Mrvos , Girish Patil , Jason Vanderpool , Brian Hart , Christopher Money , Jeanne Singh , Karthik Vaideeswaran
IPC分类号： G03C5/00 , H01L21/461 , H01L21/302
CPC分类号： B41J2/1603 , B41J2/1628 , B41J2/1631 , B41J2/1645 , B81B2201/052 , B81C1/00531
摘要： A method of etching a semiconductor substrate. The method includes the steps of applying a photoresist etch mask layer to a device surface of the substrate. A select first area of the photoresist etch mask is masked, imaged and developed. A select second area of the photoresist etch mask layer is irradiated to assist in post etch stripping of the etch mask layer from the select second area. The substrate is etched to form fluid supply slots through a thickness of the substrate. At least the select second area of the etch mask layer is removed from the substrate, whereby mask layer residue formed from the select second area of the etch mask layer is significantly reduced.
摘要翻译：蚀刻半导体衬底的方法。该方法包括以下步骤：将光致抗蚀剂蚀刻掩模层施加到衬底的器件表面。光刻胶蚀刻掩模的选择第一区被掩蔽，成像和显影。照射光致抗蚀剂蚀刻掩模层的选择的第二区域以辅助蚀刻掩模层从选择的第二区域的后蚀刻剥离。蚀刻基板以形成通过基板的厚度的流体供给槽。至少蚀刻掩模层的选择第二区域从衬底去除，由此从蚀刻掩模层的选择的第二区域形成的掩模层残留物显着减少。

10. 发明授权

US06881677B1 Method for making a micro-fluid ejection device 有权
标题翻译：制造微流体喷射装置的方法
公开(公告)号：US06881677B1
公开(公告)日：2005-04-19
申请号：US10803009
申请日：2004-03-17
申请人： Girish Shivaji Patil , Karthik Vaideeswaran
发明人： Girish Shivaji Patil , Karthik Vaideeswaran
IPC分类号： B41J2/16 , H01L21/302 , H01L21/461
CPC分类号： B81C1/00531 , B41J2/1603 , B41J2/1628 , B41J2/1631 , B81B2201/052
摘要： A method for forming a fluid feed via in a semiconductor substrate chip for a micro-fluid ejection head. The method includes applying a photoresist planarization and protection layer to a first surface of the chip. The photoresist planarization and protection layer is patterned and developed to define at least one fluid feed via location. A strippable layer is applied to the photoresist planarization and protection layer on the chip. The strippable layer is patterned and developed with a photomask to define the at least one fluid feed via location in the strippable layer. The chip is then dry etched to form at least one fluid feed via in the defined feed via location. Before or after etching the chip, deprotection of the strippable layer is induced so that the strippable layer can be substantially removed with a solvent without substantially affecting the photoresist planarization and protection layer.
摘要翻译：一种用于在用于微流体喷射头的半导体衬底芯片中形成流体供给通孔的方法。该方法包括将光致抗蚀剂平坦化和保护层应用于芯片的第一表面。光致抗蚀剂平坦化和保护层被图案化和显影以限定至少一个通过位置的流体馈送。可剥离层被施加到芯片上的光致抗蚀剂平坦化和保护层。可剥离层被图案化并用光掩模显影以限定通过可剥离层中的位置的至少一个流体进料。然后将芯片干蚀刻以在定义的进料通过位置形成至少一个流体进料通孔。在蚀刻芯片之前或之后，诱导可剥离层的脱保护，使得可剥离层可以基本上用溶剂除去而基本上不影响光致抗蚀剂平坦化和保护层。

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