会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 5. 发明授权
    • Fabrication methods and structures for micro-reservoir devices
    • 微储层装置的制造方法和结构
    • US07413846B2
    • 2008-08-19
    • US10988667
    • 2004-11-15
    • John M. MaloneyZouhair SbiaaJohn T. Santini, Jr.Norman F. Sheppard, Jr.Scott A. Uhland
    • John M. MaloneyZouhair SbiaaJohn T. Santini, Jr.Norman F. Sheppard, Jr.Scott A. Uhland
    • G03F7/20
    • B01L3/50853A61K9/0024A61K9/0097B01L2200/12B01L2300/0819B01L2400/0677
    • Methods are provided for making a multi-reservoir device comprising (i) patterning one or more photoresist layers on a substrate; (ii) depositing onto the substrate at least one metal layer by a sputtering process to form a plurality of reservoir caps and conductive traces; (iii) removing the photoresist layers using a liftoff process; (iv) forming a plurality of reservoirs in the substrate; (v) loading each reservoir with reservoir contents (such as a drug or sensor); and (vi) sealing each reservoir. Optionally, the reservoir cap comprises a first conductive metal layer coated with one or more protective noble metal films. To enhance the resistance of the substrate (e.g., a silicon substrate) to etching in vivo, the interior sidewalls of the reservoirs optionally can include a protective coating (e.g., gold, platinum, carbon, silicon carbide, silicon dioxide, and platinum silicide), or sidewalls comprising silicon can be doped with boron or another impurity.
    • 提供了用于制造多贮存器器件的方法,包括(i)在衬底上图案化一个或多个光致抗蚀剂层; (ii)通过溅射工艺在衬底上沉积至少一个金属层以形成多个储存器盖和导电迹线; (iii)使用剥离工艺除去光致抗蚀剂层; (iv)在所述基板中形成多个储存器; (v)向每个储存器装载储存器内容物(例如药物或传感器); 和(vi)密封每个储存器。 可选地,储存器盖包括涂覆有一个或多个保护性贵金属膜的第一导电金属层。 为了增强衬底(例如,硅衬底)在体内蚀刻的电阻,存储器的内侧壁任选地可以包括保护涂层(例如金,铂,碳,碳化硅,二氧化硅和硅化铂) ,或者包含硅的侧壁可以掺杂硼或另一种杂质。
    • 7. 发明申请
    • Fabrication methods and structures for micro-reservoir devices
    • 微储层装置的制造方法和结构
    • US20060105275A1
    • 2006-05-18
    • US10988667
    • 2004-11-15
    • John MaloneyZouhair SbiaaJohn SantiniNorman SheppardScott Uhland
    • John MaloneyZouhair SbiaaJohn SantiniNorman SheppardScott Uhland
    • G03F7/00
    • B01L3/50853A61K9/0024A61K9/0097B01L2200/12B01L2300/0819B01L2400/0677
    • Methods are provided for making a multi-reservoir device comprising (i) patterning one or more photoresist layers on a substrate; (ii) depositing onto the substrate at least one metal layer by a sputtering process to form a plurality of reservoir caps and conductive traces; (iii) removing the photoresist layers using a liftoff process; (iv) forming a plurality of reservoirs in the substrate; (v) loading each reservoir with reservoir contents (such as a drug or sensor); and (vi) sealing each reservoir. Optionally, the reservoir cap comprises a first conductive metal layer coated with one or more protective noble metal films. To enhance the resistance of the substrate (e.g., a silicon substrate) to etching in vivo, the interior sidewalls of the reservoirs optionally can include a protective coating (e.g., gold, platinum, carbon, silicon carbide, silicon dioxide, and platinum silicide), or sidewalls comprising silicon can be doped with boron or another impurity.
    • 提供了用于制造多贮存器器件的方法,包括(i)在衬底上图案化一个或多个光致抗蚀剂层; (ii)通过溅射工艺在衬底上沉积至少一个金属层以形成多个储存器盖和导电迹线; (iii)使用剥离工艺除去光致抗蚀剂层; (iv)在所述基板中形成多个储存器; (v)向每个储存器装载储存器内容物(例如药物或传感器); 和(vi)密封每个储存器。 可选地,储存器盖包括涂覆有一个或多个保护性贵金属膜的第一导电金属层。 为了增强衬底(例如,硅衬底)在体内蚀刻的电阻,存储器的内侧壁任选地可以包括保护涂层(例如金,铂,碳,碳化硅,二氧化硅和硅化铂) ,或者包含硅的侧壁可以掺杂硼或另一种杂质。