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    • 1. 发明授权
    • Plating process and apparatus for through wafer features
    • 用于通过晶片特征的电镀工艺和设备
    • US08343791B2
    • 2013-01-01
    • US12923693
    • 2010-10-05
    • John S. FosterJohn C. HarleyJeffery F. Summers
    • John S. FosterJohn C. HarleyJeffery F. Summers
    • H01L21/00
    • H01L21/76898B32B37/02B32B2457/14B81B7/0006B81B2207/092B81B2207/095
    • A method for forming through features in a substrate uses a seed layer deposited over a first substrate, and a second substrate bonded to the seed layer. The features may be formed in the first substrate, by plating a conductive filler material onto the seed layer. The first substrate and the second substrate may then be bonded to a third substrate, and the second substrate is removed, leaving through features and first substrate adhered to the third substrate. The through features may provide at least one of electrical access and motion to a plurality of devices formed on the third substrate, or may impart movement to a moveable feature on the first substrate, wherein the third substrate supports the first substrate after removal of the second substrate.
    • 用于在衬底中形成穿透特征的方法使用沉积在第一衬底上的种子层和与种子层结合的第二衬底。 特征可以在第一基板中形成,通过将导电填料材料镀在种子层上。 然后可以将第一衬底和第二衬底接合到第三衬底,并且去除第二衬底,留下通过特征和粘附到第三衬底的第一衬底。 穿透特征可以向形成在第三基底上的多个装置提供电通路和运动中的至少一个,或者可以将运动赋予第一基板上的可移动特征,其中第三基板在移除第二基板之后支撑第一基板 基质。