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1. 发明授权

US08821635B2 Method for growing Si-Ge semiconductor materials and devices on substrates 有权
标题翻译：在衬底上生长Si-Ge半导体材料和器件的方法
公开(公告)号：US08821635B2
公开(公告)日：2014-09-02
申请号：US11662669
申请日：2005-04-08
申请人： John Kouvetakis , Ignatius S. T. Tsong , Changwu Hu , John Tolle
发明人： John Kouvetakis , Ignatius S. T. Tsong , Changwu Hu , John Tolle
IPC分类号： C30B25/02 , H01L21/02 , B82Y10/00 , C30B29/52 , B32B15/02 , C30B23/02
CPC分类号： B32B15/02 , B82Y10/00 , C30B23/002 , C30B23/02 , C30B25/02 , C30B29/52 , H01L21/02381 , H01L21/02532 , H01L21/02573 , H01L21/0262 , H01L21/02636 , Y10T428/265 , Y10T428/31663
摘要： Si—Ge materials are grown on Si(100) with Ge-rich contents (Ge>50 at. %) and precise stoichiometries SiGe, SiGe2, SiGe3 and SiGe4. New hydrides with direct Si—Ge bonds derived from the family of compounds (H3Ge)xSiH4-x (x=1-4) are used to grow uniform, relaxed, and highly planar films with low defect densities at unprecedented low temperatures between about 300-450° C. At about 500-700° C., SiGex quantum dots are grown with narrow size distribution, defect-free microstructures and highly homogeneous elemental content at the atomic level. The method provides for precise control of morphology, composition, structure and strain. The grown materials possess the required characteristics for high frequency electronic and optical applications, and for templates and buffer layers for high mobility Si and Ge channel devices.
摘要翻译： Si-Ge材料在具有富锗含量（Ge> 50at。％）和精确化学计量的SiGe，SiGe2，SiGe3和SiGe4的Si（100）上生长。使用衍生自化合物系列（H3Ge）xSiH4-x（x = 1-4）的直接Si-Ge键的新型氢化物在前所未有的低温下生长具有低缺陷密度的均匀，松弛和高平面的膜，约为300 在约500-700℃下，SiGex量子点以较小的分布，无缺陷的微结构和原子级的高均匀元素含量生长。该方法提供形态，组成，结构和应变的精确控制。生长的材料具有高频电子和光学应用所需的特性，以及用于高迁移率Si和Ge通道器件的模板和缓冲层。

2. 发明授权

US08518360B2 Silicon-germanium hydrides and methods for making and using same 失效
标题翻译：硅锗氢化物及其制造和使用方法
公开(公告)号：US08518360B2
公开(公告)日：2013-08-27
申请号：US13542987
申请日：2012-07-06
申请人： John Kouvetakis , Cole J. Ritter, III , Changwu Hu , Ignatius S. T. Tsong , Andrew Chizmeshya
发明人： John Kouvetakis , Cole J. Ritter, III , Changwu Hu , Ignatius S. T. Tsong , Andrew Chizmeshya
IPC分类号： C01B33/00 , C30B25/02
CPC分类号： C01B6/06 , C23C16/22 , C30B25/02 , C30B29/52 , H01L21/0237 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： The present invention provides novel silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the novel compounds.
摘要翻译：本发明提供新的硅锗化合物，它们的合成方法，它们的沉积方法，以及使用这些新化合物制备的半导体结构。

3. 发明授权

US08216537B2 Silicon-germanium hydrides and methods for making and using same 失效
标题翻译：硅锗氢化物及其制造和使用方法
公开(公告)号：US08216537B2
公开(公告)日：2012-07-10
申请号：US12093279
申请日：2006-11-21
申请人： John Kouvetakis , Cole J. Ritter, III , Changwu Hu , Ignatius S. T. Tsong , Andrew Chizmeshya
发明人： John Kouvetakis , Cole J. Ritter, III , Changwu Hu , Ignatius S. T. Tsong , Andrew Chizmeshya
IPC分类号： C01B33/00 , C30B25/02
CPC分类号： C01B6/06 , C23C16/22 , C30B25/02 , C30B29/52 , H01L21/0237 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： The present invention provides novel silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the novel compounds.
摘要翻译：本发明提供新的硅锗化合物，它们的合成方法，它们的沉积方法，以及使用这些新化合物制备的半导体结构。

4. 发明授权

US07781356B2 Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layer 有权
标题翻译：通过反射晶格匹配的二硼化硼缓冲层在硅衬底上外延生长III族氮化物
公开(公告)号：US07781356B2
公开(公告)日：2010-08-24
申请号：US10545484
申请日：2004-02-12
申请人： John Kouvetakis , Ignatius S. T. Tsong , John Tolle , Radek Roucka
发明人： John Kouvetakis , Ignatius S. T. Tsong , John Tolle , Radek Roucka
IPC分类号： C04B35/58 , C30B25/00
CPC分类号： C30B25/02 , C30B29/10 , H01L21/0237 , H01L21/02439 , H01L21/02491 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L33/007
摘要： A semiconductor structure and fabrication method is provided for integrating wide bandgap nitrides with silicon. The structure includes a substrate, a single crystal buffer layer formed by epitaxy over the substrate and a group III nitride film formed by epitaxy over the buffer layer. The buffer layer is reflective and conductive. The buffer layer may comprise B an element selected from the group consisting of Zr, Hf, Al. For example, the buffer layer may comprise ZrB2, AlB2 or HfB2. The buffer layer provides a lattice match with the group III nitride layer. The substrate can comprise silicon, silicon carbide (SiC), gallium arsenide (GaAs), sapphire or Al2O3. The group III nitride material includes GaN, AlN, InN, AlGaN, InGaN or AlInGaN and can form an active region. In a presently preferred embodiment, the buffer layer is ZrB2 and the substrate is Si(111) or Si(100) and the group III nitride layer comprises GaN. The ZrB2 buffer layer provides a reflective and conductive buffer layer that has a small lattice mismatch with GaN. The semiconductor structure can be used to fabricate active microelectronic devices, such as transistors including field effect transistors and bipolar transistors. The semiconductor structure also can be used to fabricate optoelectronic devices, such as laser diodes and light emitting diodes.
摘要翻译：提供了一种用于将宽带隙氮化物与硅结合的半导体结构和制造方法。该结构包括衬底，通过衬底上的外延形成的单晶缓冲层和通过缓冲层上的外延形成的III族氮化物膜。缓冲层是反射和导电的。缓冲层可以包含选自由Zr，Hf，Al组成的组的元素。例如，缓冲层可以包括ZrB2，AlB2或HfB2。缓冲层提供与III族氮化物层的晶格匹配。衬底可以包括硅，碳化硅（SiC），砷化镓（GaAs），蓝宝石或Al2O3。 III族氮化物材料包括GaN，AlN，InN，AlGaN，InGaN或AlInGaN，并且可以形成有源区。在目前优选的实施方案中，缓冲层是ZrB 2，衬底是Si（111）或Si（100），III族氮化物层包括GaN。 ZrB2缓冲层提供与GaN具有小的晶格失配的反射和导电缓冲层。半导体结构可用于制造有源微电子器件，例如包括场效应晶体管和双极晶体管的晶体管。该半导体结构也可用于制造诸如激光二极管和发光二极管之类的光电器件。

5. 发明授权

US06911084B2 Low temperature epitaxial growth of quaternary wide bandgap semiconductors 失效
标题翻译：四元宽带隙半导体的低温外延生长
公开(公告)号：US06911084B2
公开(公告)日：2005-06-28
申请号：US09981024
申请日：2001-10-16
申请人： John Kouvetakis , Ignatius S. T. Tsong , Radek Roucka , John Tolle
发明人： John Kouvetakis , Ignatius S. T. Tsong , Radek Roucka , John Tolle
IPC分类号： C30B25/02 , H01L21/205 , H01L33/26 , H01S5/30 , H01S5/32 , C30B25/08
CPC分类号： H01L33/26 , C30B25/02 , C30B29/52 , H01L21/02378 , H01L21/02381 , H01L21/02447 , H01L21/02458 , H01L21/02529 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01S5/30 , H01S5/3027 , H01S5/32 , H01S2304/02
摘要： A method of growing quaternary epitaxial films having the formula YCZN wherein Y is a Group IV element and Z is a Group III element at temperatures in the range 550-750° C. is provided. In the method, a gaseous flux of precursor H3YCN and a vapor flux of Z atoms are introduced into a gas-source molecular beam epitaxial (GSMBE) chamber where they combine to form thin film of YCZN on the substrate. Preferred substrates are silicon, silicon carbide and AlN/silicon structures. Epitaxial thin film SiCAlN and GeCAlN are provided. Bandgap engineering may be achieved by the method by adjusting reaction parameters of the GSMBE process and the relative concentrations of the constituents of the quaternary alloy films. Semiconductor devices produced by the present method have bandgaps from about 2 eV to about 6 eV and exhibit a spectral range from visible to ultraviolet which makes them useful for a variety of optoelectronic and microelectronic applications. Large-area substrates for growth of conventional Group III nitrides and compounds are produced by SiCAlN deposited on large-diameter silicon wafers. The quaternary compounds, especially the boron containing compounds, exhibit extreme hardness. These quaternary compounds are radiation resistant and may be used in space exploration.
摘要翻译：提供了在550-750℃的温度下生长具有式YCZN的四元外延膜的方法，其中Y是IV族元素，Z是III族元素。在该方法中，将前体H 3 YCN的气体流量和Z原子的蒸气通量引入气体分子束外延（GSMBE）室中，在其中它们结合形成YCZN的薄膜，底物。优选的衬底是硅，碳化硅和AlN /硅结构。提供外延薄膜SiCA1N和GeCA1N。通过调整GSMBE工艺的反应参数和四元合金薄膜成分的相对浓度，可以通过该方法实现带隙工程。通过本方法制造的半导体器件具有约2eV至约6eV的带隙，并且具有从可见到紫外线的光谱范围，使得它们可用于各种光电子和微电子应用。用于生长常规III族氮化物和化合物的大面积衬底由沉积在大直径硅晶片上的SiCAlN产生。四元化合物，特别是含硼化合物，具有极高的硬度。这些四元化合物具有耐辐射性，可用于太空探索。

6. 发明授权

US07589003B2 GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon 失效
标题翻译： GeSn合金和直接在硅上生长的直接可调带隙的有序相
公开(公告)号：US07589003B2
公开(公告)日：2009-09-15
申请号：US10559981
申请日：2004-06-14
申请人： John Kouvetakis , Matthew Bauer , Jose Menendez , Chang Wu Hu , Ignatius S. T. Tsong , John Tolle
发明人： John Kouvetakis , Matthew Bauer , Jose Menendez , Chang Wu Hu , Ignatius S. T. Tsong , John Tolle
IPC分类号： H01L21/00
CPC分类号： C30B29/40 , B82Y10/00 , C30B25/02 , H01L21/02381 , H01L21/02532 , H01L21/02535 , H01L21/0262
摘要： A method for depositing an epitaxial Ge—Sn layer on a substrate in a CVD reaction chamber includes introducing into the chamber a gaseous precursor comprising SnD4 under conditions whereby the epitaxial Ge—Sn layer is formed on the substrate. the gaseous precursor comprises SnD4 and high purity H2 of about 15-20% by volume. The gaseous precursor is introduced at a temperature in a range of about 250° C. to about 350° C. Using the process device-quality Sn—Ge materials with tunable bandgaps can be grown directly on Si substrates.
摘要翻译：在CVD反应室中在衬底上沉积外延Ge-Sn层的方法包括在衬底上形成外延Ge-Sn层的条件下将包含SnD4的气态前体引入室中。气态前体包含约15-20体积％的SnD4和高纯度H2。气体前体在约250℃至约350℃的温度下引入。使用具有可调带隙的工艺装置质量的Sn-Ge材料可直接在Si衬底上生长。

7. 发明申请

US20080113186A1 Method for Growing Si-Ge Semiconductor Materials and Devices on Substrates 有权
标题翻译：在基板上生长Si-Ge半导体材料和器件的方法
公开(公告)号：US20080113186A1
公开(公告)日：2008-05-15
申请号：US11662669
申请日：2005-04-08
申请人： John Kouvetakis , Ignatius S.T. Tsong , Changwu Hu , John Tolle
发明人： John Kouvetakis , Ignatius S.T. Tsong , Changwu Hu , John Tolle
IPC分类号： H01L21/20 , C30B25/02 , B32B33/00 , C01B33/06
CPC分类号： B32B15/02 , B82Y10/00 , C30B23/002 , C30B23/02 , C30B25/02 , C30B29/52 , H01L21/02381 , H01L21/02532 , H01L21/02573 , H01L21/0262 , H01L21/02636 , Y10T428/265 , Y10T428/31663
摘要： A method is provided for growing Si—Ge materials on Si(100) with Ge-rich contents (Ge>50 at. %) and precise stoichiometries SiGe, SiGe2, SiGe3 and SiGe4. New hydrides with direct Si—Ge bonds derived from the family of compounds (H3Ge)xSiH4-x (x=1-4) are used to grow uniform, relayed and highly planar films with low defect densities at unprecedented low temperatures between about 300-450° C., circumventing entirely the need of thick compositionally graded buffer layer and lift off technologies. At about 500-700° C., SiGex quantum dots are grown with narrow size distribution, defect-free microstructures and highly homogeneous elemental content at the atomic level. The method provides precise control of morphology, composition, structure and strain via the incorporation of the entire Si/Ge framework of the gaseous precursor into the film. The grown materials possess the required morphological and microstructural characteristics for applications in high frequency electronic and optical systems, as well as templates and buffer layers for development of commercial devices based on high mobility Si and Ge channels.
摘要翻译：提供了一种用于在具有富锗含量（Ge> 50at。％）和精确化学计量的Si（100）上生长Si-Ge材料的方法，SiGe，SiGe 2 Si，SiGe 3， SUB＆gt;和SiGe 4。具有源自化合物族（H 3 3 Ge）的直接Si-Ge键的新型氢化物x Si x 4 x x（x = 1- 4）用于在约300-450℃之间的前所未有的低温下生长具有低缺陷密度的均匀的，中继的和高度平坦的膜，完全避免了厚的成分梯度缓冲层和剥离技术的需要。在约500-700℃下，以较小的分布，无缺陷的微结构和原子水平的高均匀元素含量生长SiGe x X量子点。该方法通过将气态前体的整个Si / Ge骨架结合到膜中来提供形态，组成，结构和应变的精确控制。生长的材料具有在高频电子和光学系统中的应用所需的形态和微结构特征，以及用于基于高迁移率Si和Ge通道开发商业设备的模板和缓冲层。

8. 发明申请

US20130032857A1 Silicon-Germanium Hydrides and Methods for Making and Using Same 失效
标题翻译：硅锗氢化物及其制造和使用方法
公开(公告)号：US20130032857A1
公开(公告)日：2013-02-07
申请号：US13542987
申请日：2012-07-06
申请人： John Kouvetakis , Cole J. Ritter, III , Changwu Hu , Ignatius S.T. Tsong , Andrew Chizmeshya
发明人： John Kouvetakis , Cole J. Ritter, III , Changwu Hu , Ignatius S.T. Tsong , Andrew Chizmeshya
IPC分类号： C01B33/04 , C07F7/08 , H01B1/06 , H01L29/24 , H01L21/205
CPC分类号： C01B6/06 , C23C16/22 , C30B25/02 , C30B29/52 , H01L21/0237 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： The present invention provides novel silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the novel compounds.
摘要翻译：本发明提供新的硅锗化合物，它们的合成方法，它们的沉积方法，以及使用这些新化合物制备的半导体结构。

9. 发明申请

US20100012972A1 Silicon-Germanium Hydrides and Methods for Making and Using Same 失效
标题翻译：硅锗氢化物及其制造和使用方法
公开(公告)号：US20100012972A1
公开(公告)日：2010-01-21
申请号：US12093279
申请日：2006-11-21
申请人： John Kouvetakis , Cole J. Ritter III , Changwu Hu , Ignatius S.T. Tsong , Andrew Chizmeshya
发明人： John Kouvetakis , Cole J. Ritter III , Changwu Hu , Ignatius S.T. Tsong , Andrew Chizmeshya
IPC分类号： H01L29/165 , C01B33/00 , C30B25/02 , H01B1/06 , H01L21/20
CPC分类号： C01B6/06 , C23C16/22 , C30B25/02 , C30B29/52 , H01L21/0237 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： The present invention provides novel silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the novel compounds.
摘要翻译：本发明提供新的硅锗化合物，它们的合成方法，它们的沉积方法，以及使用这些新化合物制备的半导体结构。

10. 发明申请

US20120020864A1 Hydride Compounds with Silicon and Germanium Core Atoms and method of Synthesizing Same 失效
标题翻译：具有硅和锗核原子的氢化物化合物及其合成方法
公开(公告)号：US20120020864A1
公开(公告)日：2012-01-26
申请号：US13180961
申请日：2011-07-12
申请人： John Kouvetakis , Cole J. Ritter, III , John Tolle
发明人： John Kouvetakis , Cole J. Ritter, III , John Tolle
IPC分类号： C01B33/04
CPC分类号： C01B33/04 , C01B6/06 , Y10S148/058
摘要： A method is provided for synthesizing silicon-germanium hydride compounds of the formula (H3Ge)4-xSiHx, wherein x=0, 1, 2 or 3. The method includes combining a silane triflate with a compound having a GeH3 ligand under conditions whereby the silicon-germanium hydride is formed. The compound having the GeH3 ligand is selected from the group consisting of KGeH3, NaGeH3 and MR3GeH3, wherein M is a Group IV element and R is an organic ligand. The silane triflate can be HxSi(OSO2CF3)4-x or HxSi(OSO2C4F9)4-x. The method can be used to synthesize trisilane, (H3Si)2SiH2, and the iso-tetrasilane analog, (H3Si)3SiH, by combining a silane triflate with a compound comprising a SiH3 ligand under conditions whereby the silicon hydride is formed. The silane triflate can include HxSi(OSO2CF3)4-x or HxSi(OSO2C4F9)4-x wherein x=1 or 2. A method for synthesizing (H3Ge)2SiH2 includes combining H3GeSiH2(OSO2CF3) with KGeH3 under conditions whereby (H3Ge)2SiH2 is formed.
摘要翻译：提供了一种用于合成式（H3Ge）4-xSiHx的硅 - 锗化合物的方法，其中x = 0,1,2或3.该方法包括将硅烷三氟甲磺酸酯与具有GeH 3配位体的化合物组合，形成硅 - 锗氢化物。具有GeH 3配体的化合物选自KGeH 3，NaGeH 3和MR 3 GeH 3，其中M是IV族元素，R是有机配体。三氟甲磺酸硅烷可以是H x Si（OSO 2 CF 3）4-x或H x Si（OSO 2 C 4 F 9）4-x。该方法可以通过在形成硅氢化氢的条件下将硅烷三氟甲磺酸酯与包含SiH 3配体的化合物组合来合成丙硅烷（H3Si）2 SiH 2和异四硅烷类似物（H3Si）3 SiH。三氟甲磺酸硅烷可以包括H x Si（OSO 2 CF 3）4-x或H x Si（OSO 2 C 4 F 9）4-x，其中x = 1或2.合成（H3Ge）2 SiH 2的方法包括将H3GeSiH 2（OSO 2 CF 3）与KGeH 3组合，形成了。

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