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1. 发明授权

US08043980B2 Methods for making and using halosilylgermanes 有权
标题翻译：制备和使用卤代甲硅烷基锗烷的方法
公开(公告)号：US08043980B2
公开(公告)日：2011-10-25
申请号：US12594250
申请日：2008-04-02
申请人： John Kouvetakis , Jesse Tice , Yan-Yan Fang
发明人： John Kouvetakis , Jesse Tice , Yan-Yan Fang
IPC分类号： H01L21/31
CPC分类号： H01L21/0262 , C01B33/08 , C01B33/107 , C23C16/30 , H01L21/02381 , H01L21/02532 , H01L21/02636 , Y10S438/933
摘要： The invention provides compounds of, and methods for the preparation of compounds of, the molecular formula, SixGeyHz—aXa; wherein X is halogen, and x, y, z, and a are defined herein, and methods for the deposition of high-Ge content Si films on silicon substrates using compounds of the invention.
摘要翻译：本发明提供了分子式为SixGeyHz-aXa的化合物及其制备方法。其中X是卤素，x，y，z和a在本文中定义，以及使用本发明的化合物在硅衬底上沉积高Ge含量的Si膜的方法。

2. 发明申请

US20110062496A1 Methods and Compositions for Preparing Ge/Si Semiconductor Substrates 审中-公开
标题翻译： Ge / Si半导体衬底的制备方法和组成
公开(公告)号：US20110062496A1
公开(公告)日：2011-03-17
申请号：US12946485
申请日：2010-11-15
申请人： John Kouvetakis , Yan-Yan Fang
发明人： John Kouvetakis , Yan-Yan Fang
IPC分类号： H01L29/78
CPC分类号： H01L21/02532 , H01L21/02381 , H01L21/0262 , Y10S438/933
摘要： The present disclosure describes methods for preparing semiconductor structures, comprising forming a Ge layer on a semiconductor substrate using an admixture of (a) (GeH3)2CH2 and Ge2H6; (b) GeH3CH3 and Ge2H6; or (c) (GeH3)2CH2, GeH3CH3 and Ge2H6, wherein in all cases, Ge2H6 is in excess. The disclosure further provides semiconductor structures formed according to the methods of the invention as well as compositions comprising an admixture of (GeH3)2CH2 and/or GeH3CH3 and Ge2H6 in a ratio of between about 1:5 and 1:30. The methods herein provide, and the semiconductor structures provide, Ge layers formed on semiconductor substrates having threading dislocation density below 105/cm2 which can be useful in semiconductor devices.
摘要翻译：本公开描述了制备半导体结构的方法，包括使用（a）（GeH 3）2 CH 2和Ge 2 H 6的混合物在半导体衬底上形成Ge层; （b）GeH 3 CH 3和Ge 2 H 6; 或（c）（GeH 3）2 CH 2，GeH 3 CH 3和Ge 2 H 6，其中在所有情况下，Ge 2 H 6过量。本发明还提供了根据本发明方法形成的半导体结构以及包含（GeH 3）2 CH 2和/或GeH 3 CH 3和Ge 2 H 6的混合物的比例为约1:5至1:30的组合物。本文提供的方法，并且半导体结构提供了在半导体衬底上形成的穿透位错密度低于105 / cm 2的Ge层，其可用于半导体器件。

3. 发明授权

US07781356B2 Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layer 有权
标题翻译：通过反射晶格匹配的二硼化硼缓冲层在硅衬底上外延生长III族氮化物
公开(公告)号：US07781356B2
公开(公告)日：2010-08-24
申请号：US10545484
申请日：2004-02-12
申请人： John Kouvetakis , Ignatius S. T. Tsong , John Tolle , Radek Roucka
发明人： John Kouvetakis , Ignatius S. T. Tsong , John Tolle , Radek Roucka
IPC分类号： C04B35/58 , C30B25/00
CPC分类号： C30B25/02 , C30B29/10 , H01L21/0237 , H01L21/02439 , H01L21/02491 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L33/007
摘要： A semiconductor structure and fabrication method is provided for integrating wide bandgap nitrides with silicon. The structure includes a substrate, a single crystal buffer layer formed by epitaxy over the substrate and a group III nitride film formed by epitaxy over the buffer layer. The buffer layer is reflective and conductive. The buffer layer may comprise B an element selected from the group consisting of Zr, Hf, Al. For example, the buffer layer may comprise ZrB2, AlB2 or HfB2. The buffer layer provides a lattice match with the group III nitride layer. The substrate can comprise silicon, silicon carbide (SiC), gallium arsenide (GaAs), sapphire or Al2O3. The group III nitride material includes GaN, AlN, InN, AlGaN, InGaN or AlInGaN and can form an active region. In a presently preferred embodiment, the buffer layer is ZrB2 and the substrate is Si(111) or Si(100) and the group III nitride layer comprises GaN. The ZrB2 buffer layer provides a reflective and conductive buffer layer that has a small lattice mismatch with GaN. The semiconductor structure can be used to fabricate active microelectronic devices, such as transistors including field effect transistors and bipolar transistors. The semiconductor structure also can be used to fabricate optoelectronic devices, such as laser diodes and light emitting diodes.
摘要翻译：提供了一种用于将宽带隙氮化物与硅结合的半导体结构和制造方法。该结构包括衬底，通过衬底上的外延形成的单晶缓冲层和通过缓冲层上的外延形成的III族氮化物膜。缓冲层是反射和导电的。缓冲层可以包含选自由Zr，Hf，Al组成的组的元素。例如，缓冲层可以包括ZrB2，AlB2或HfB2。缓冲层提供与III族氮化物层的晶格匹配。衬底可以包括硅，碳化硅（SiC），砷化镓（GaAs），蓝宝石或Al2O3。 III族氮化物材料包括GaN，AlN，InN，AlGaN，InGaN或AlInGaN，并且可以形成有源区。在目前优选的实施方案中，缓冲层是ZrB 2，衬底是Si（111）或Si（100），III族氮化物层包括GaN。 ZrB2缓冲层提供与GaN具有小的晶格失配的反射和导电缓冲层。半导体结构可用于制造有源微电子器件，例如包括场效应晶体管和双极晶体管的晶体管。该半导体结构也可用于制造诸如激光二极管和发光二极管之类的光电器件。

4. 发明申请

US20080187768A1 Novel Gesisn-Based Compounds, Templates, and Semiconductor Structures 有权
标题翻译：新型Gesisn基化合物，模板和半导体结构
公开(公告)号：US20080187768A1
公开(公告)日：2008-08-07
申请号：US11908143
申请日：2006-03-10
申请人： John Kouvetakis , Radek Roucka
发明人： John Kouvetakis , Radek Roucka
IPC分类号： B32B15/04 , C01B33/00
CPC分类号： C23C16/0272 , C23C16/301 , C23C16/42 , C30B25/02 , C30B29/52 , H01L21/02381 , H01L21/0245 , H01L21/02452 , H01L21/02502 , H01L21/02532 , H01L21/02535 , H01L21/02543 , H01L21/02546 , H01L21/02549 , H01L21/02557 , H01L21/0256 , H01L21/02562 , H01L21/02568 , H01L21/0262 , H01L29/161 , H01L29/165 , H01L29/20 , H01L29/22 , H01L29/267 , H01L31/028 , H01L31/0296 , H01L31/0304 , H01L31/03046 , H01L31/101 , Y02E10/544 , Y02E10/547
摘要： The present invention provides novel compounds of the formula Gei-x-ySixSny, wherein 0.01
摘要翻译：本发明提供新的式Gei-x-ySixSny化合物，其中0.01

5. 发明授权

US5606056A Carbon nitride and its synthesis 失效
标题翻译：碳氮化物及其合成
公开(公告)号：US5606056A
公开(公告)日：1997-02-25
申请号：US248407
申请日：1994-05-24
申请人： John Kouvetakis , Michael Todd
发明人： John Kouvetakis , Michael Todd
IPC分类号： C01B21/06 , C04B35/58 , C23C16/34 , C07D251/72 , B32B9/00
CPC分类号： C23C16/347 , C01B21/0605 , C04B35/58 , C01P2002/82 , C01P2002/88 , C01P2004/03 , Y10T428/30
摘要： An extended solid bulk composition carbon nitride (C.sub.3 N.sub.4) having an atomic ratio of carbon to nitrogen in the range of 3:4 to 3.2:4 as a bulk solid, produced by thermal decomposition and chemical vapor deposition of precursors having formula (I):C.sub.3 N.sub.3 XX'N(MR.sub.3)(M'R'.sub.3) (I)wherein C3N3 is a cyclic 1,3,5-triazine group, X is a halogen selected from the group consisting of fluorine, chlorine, bromine, and iodine, X' is a halogen selected from the group consisting of fluorine, chlorine, bromine, and iodine, M is a group IV metal, M' is a group IV metal, R is an alkyl substituent, and R' is an alkyl substituent, producing a decomposition gas decomposition gas having formula II:XMR.sub.3 (II)
摘要翻译：通过热分解和化学气相沉积具有式（I）的前体制备的作为大量固体的碳/氮原子比在3:4至3.2:4范围内的固体本体组合物碳氮化物（C 3 N 4）： C3N3XX'N（MR3）（M'R'3）（I）其中C3N3是环状1,3,5-三嗪基，X是选自氟，氯，溴和碘的卤素，X '是选自氟，氯，溴和碘的卤素，M是IV族金属，M'是Ⅳ族金属，R是烷基取代基，R'是烷基取代基，产生具有式II的分解气体分解气体：XMR3（II）

6. 发明授权

US08518360B2 Silicon-germanium hydrides and methods for making and using same 失效
标题翻译：硅锗氢化物及其制造和使用方法
公开(公告)号：US08518360B2
公开(公告)日：2013-08-27
申请号：US13542987
申请日：2012-07-06
申请人： John Kouvetakis , Cole J. Ritter, III , Changwu Hu , Ignatius S. T. Tsong , Andrew Chizmeshya
发明人： John Kouvetakis , Cole J. Ritter, III , Changwu Hu , Ignatius S. T. Tsong , Andrew Chizmeshya
IPC分类号： C01B33/00 , C30B25/02
CPC分类号： C01B6/06 , C23C16/22 , C30B25/02 , C30B29/52 , H01L21/0237 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： The present invention provides novel silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the novel compounds.
摘要翻译：本发明提供新的硅锗化合物，它们的合成方法，它们的沉积方法，以及使用这些新化合物制备的半导体结构。

7. 发明申请

US20120025212A1 GeSn Infrared Photodetectors 审中-公开
标题翻译： GeSn红外光电探测器
公开(公告)号：US20120025212A1
公开(公告)日：2012-02-02
申请号：US13062154
申请日：2009-09-16
申请人： John Kouvetakis , Jose Menendez , Radek Roucka , Jay Mathews
发明人： John Kouvetakis , Jose Menendez , Radek Roucka , Jay Mathews
IPC分类号： H01L33/02 , H01L31/107 , H01L31/18 , H01L31/102
CPC分类号： H01L31/107 , H01L21/02381 , H01L21/0245 , H01L21/02452 , H01L21/02532 , H01L21/02535 , H01L21/0257 , H01L27/14649 , H01L31/03125 , H01L31/075
摘要： Photodiode devices with GeSn active layers can be integrated directly on p+ Si platforms under CMOS-compatible conditions. It has been found that even minor amounts of Sn incorporation (2%) dramatically expand the range of IR detection up to at least 1750 nm and substantially increases the absorption. The corresponding photoresponse can cover of all telecommunication bands using entirely group IV materials.
摘要翻译：具有GeSn有源层的光电二极管器件可以在CMOS兼容条件下直接集成到p + Si平台上。已经发现，甚至少量的Sn掺入（2％）显着地将IR检测的范围扩大到至少1750nm，并且显着增加了吸收。相应的光响应可以覆盖所有使用完全IV组材料的电信频段。

8. 发明申请

US20120020864A1 Hydride Compounds with Silicon and Germanium Core Atoms and method of Synthesizing Same 失效
标题翻译：具有硅和锗核原子的氢化物化合物及其合成方法
公开(公告)号：US20120020864A1
公开(公告)日：2012-01-26
申请号：US13180961
申请日：2011-07-12
申请人： John Kouvetakis , Cole J. Ritter, III , John Tolle
发明人： John Kouvetakis , Cole J. Ritter, III , John Tolle
IPC分类号： C01B33/04
CPC分类号： C01B33/04 , C01B6/06 , Y10S148/058
摘要： A method is provided for synthesizing silicon-germanium hydride compounds of the formula (H3Ge)4-xSiHx, wherein x=0, 1, 2 or 3. The method includes combining a silane triflate with a compound having a GeH3 ligand under conditions whereby the silicon-germanium hydride is formed. The compound having the GeH3 ligand is selected from the group consisting of KGeH3, NaGeH3 and MR3GeH3, wherein M is a Group IV element and R is an organic ligand. The silane triflate can be HxSi(OSO2CF3)4-x or HxSi(OSO2C4F9)4-x. The method can be used to synthesize trisilane, (H3Si)2SiH2, and the iso-tetrasilane analog, (H3Si)3SiH, by combining a silane triflate with a compound comprising a SiH3 ligand under conditions whereby the silicon hydride is formed. The silane triflate can include HxSi(OSO2CF3)4-x or HxSi(OSO2C4F9)4-x wherein x=1 or 2. A method for synthesizing (H3Ge)2SiH2 includes combining H3GeSiH2(OSO2CF3) with KGeH3 under conditions whereby (H3Ge)2SiH2 is formed.
摘要翻译：提供了一种用于合成式（H3Ge）4-xSiHx的硅 - 锗化合物的方法，其中x = 0,1,2或3.该方法包括将硅烷三氟甲磺酸酯与具有GeH 3配位体的化合物组合，形成硅 - 锗氢化物。具有GeH 3配体的化合物选自KGeH 3，NaGeH 3和MR 3 GeH 3，其中M是IV族元素，R是有机配体。三氟甲磺酸硅烷可以是H x Si（OSO 2 CF 3）4-x或H x Si（OSO 2 C 4 F 9）4-x。该方法可以通过在形成硅氢化氢的条件下将硅烷三氟甲磺酸酯与包含SiH 3配体的化合物组合来合成丙硅烷（H3Si）2 SiH 2和异四硅烷类似物（H3Si）3 SiH。三氟甲磺酸硅烷可以包括H x Si（OSO 2 CF 3）4-x或H x Si（OSO 2 C 4 F 9）4-x，其中x = 1或2.合成（H3Ge）2 SiH 2的方法包括将H3GeSiH 2（OSO 2 CF 3）与KGeH 3组合，形成了。

9. 发明申请

US20100151666A1 Novel Methods for Making and Using Halosilylgermanes 有权
标题翻译：制备和使用卤代甲硅烷基的新方法
公开(公告)号：US20100151666A1
公开(公告)日：2010-06-17
申请号：US12594250
申请日：2008-04-02
申请人： John Kouvetakis , Jesse Tice , Yan-Yan Fang
发明人： John Kouvetakis , Jesse Tice , Yan-Yan Fang
IPC分类号： H01L21/20 , C01B33/08 , C23C16/06 , H05H1/24
CPC分类号： H01L21/0262 , C01B33/08 , C01B33/107 , C23C16/30 , H01L21/02381 , H01L21/02532 , H01L21/02636 , Y10S438/933
摘要： The invention provides compounds of, and methods for the preparation of compounds of, the molecular formula, SixGeyHz—aXa; wherein X is halogen, and x, y, z, and a are defined herein, and methods for the deposition of high-Ge content Si films on silicon substrates using compounds of the invention.
摘要翻译：本发明提供了分子式为SixGeyHz-aXa的化合物及其制备方法。其中X是卤素，x，y，z和a在本文中定义，以及使用本发明的化合物在硅衬底上沉积高Ge含量的Si膜的方法。

10. 发明授权

US07582891B2 Materials and optical devices based on group IV quantum wells grown on Si-Ge-Sn buffered silicon 失效
标题翻译：基于在Si-Ge-Sn缓冲硅上生长的IV族量子阱的材料和光学器件
公开(公告)号：US07582891B2
公开(公告)日：2009-09-01
申请号：US11663024
申请日：2005-09-16
申请人： John Kouvetakis , Jose Menendez , John Tolle , Ling Liao , Dean Samara-Rubio
发明人： John Kouvetakis , Jose Menendez , John Tolle , Ling Liao , Dean Samara-Rubio
IPC分类号： H01L29/739
CPC分类号： G02F1/017 , B82Y20/00 , G02F1/01708 , G02F2001/0157 , G02F2203/11 , H01L21/02381 , H01L21/0245 , H01L21/02452 , H01L21/02532 , H01L21/02535 , H01L21/0262 , H01L31/028 , H01L31/035254 , H01L31/109 , Y02E10/547
摘要： Semiconductor structures having at least one quantum well heterostructure grown strain-free on Si(100) via a Sn1-xGex buffer layer and their uses are provided.
摘要翻译：提供了具有通过Sn1-xGex缓冲层在Si（100）上生长无应变的至少一个量子阱异质结的半导体结构及其用途。

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