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1. 发明申请

US20120020864A1 Hydride Compounds with Silicon and Germanium Core Atoms and method of Synthesizing Same 失效
标题翻译：具有硅和锗核原子的氢化物化合物及其合成方法
公开(公告)号：US20120020864A1
公开(公告)日：2012-01-26
申请号：US13180961
申请日：2011-07-12
申请人： John Kouvetakis , Cole J. Ritter, III , John Tolle
发明人： John Kouvetakis , Cole J. Ritter, III , John Tolle
IPC分类号： C01B33/04
CPC分类号： C01B33/04 , C01B6/06 , Y10S148/058
摘要： A method is provided for synthesizing silicon-germanium hydride compounds of the formula (H3Ge)4-xSiHx, wherein x=0, 1, 2 or 3. The method includes combining a silane triflate with a compound having a GeH3 ligand under conditions whereby the silicon-germanium hydride is formed. The compound having the GeH3 ligand is selected from the group consisting of KGeH3, NaGeH3 and MR3GeH3, wherein M is a Group IV element and R is an organic ligand. The silane triflate can be HxSi(OSO2CF3)4-x or HxSi(OSO2C4F9)4-x. The method can be used to synthesize trisilane, (H3Si)2SiH2, and the iso-tetrasilane analog, (H3Si)3SiH, by combining a silane triflate with a compound comprising a SiH3 ligand under conditions whereby the silicon hydride is formed. The silane triflate can include HxSi(OSO2CF3)4-x or HxSi(OSO2C4F9)4-x wherein x=1 or 2. A method for synthesizing (H3Ge)2SiH2 includes combining H3GeSiH2(OSO2CF3) with KGeH3 under conditions whereby (H3Ge)2SiH2 is formed.
摘要翻译：提供了一种用于合成式（H3Ge）4-xSiHx的硅 - 锗化合物的方法，其中x = 0,1,2或3.该方法包括将硅烷三氟甲磺酸酯与具有GeH 3配位体的化合物组合，形成硅 - 锗氢化物。具有GeH 3配体的化合物选自KGeH 3，NaGeH 3和MR 3 GeH 3，其中M是IV族元素，R是有机配体。三氟甲磺酸硅烷可以是H x Si（OSO 2 CF 3）4-x或H x Si（OSO 2 C 4 F 9）4-x。该方法可以通过在形成硅氢化氢的条件下将硅烷三氟甲磺酸酯与包含SiH 3配体的化合物组合来合成丙硅烷（H3Si）2 SiH 2和异四硅烷类似物（H3Si）3 SiH。三氟甲磺酸硅烷可以包括H x Si（OSO 2 CF 3）4-x或H x Si（OSO 2 C 4 F 9）4-x，其中x = 1或2.合成（H3Ge）2 SiH 2的方法包括将H3GeSiH 2（OSO 2 CF 3）与KGeH 3组合，形成了。

2. 发明授权

US07582891B2 Materials and optical devices based on group IV quantum wells grown on Si-Ge-Sn buffered silicon 失效
标题翻译：基于在Si-Ge-Sn缓冲硅上生长的IV族量子阱的材料和光学器件
公开(公告)号：US07582891B2
公开(公告)日：2009-09-01
申请号：US11663024
申请日：2005-09-16
申请人： John Kouvetakis , Jose Menendez , John Tolle , Ling Liao , Dean Samara-Rubio
发明人： John Kouvetakis , Jose Menendez , John Tolle , Ling Liao , Dean Samara-Rubio
IPC分类号： H01L29/739
CPC分类号： G02F1/017 , B82Y20/00 , G02F1/01708 , G02F2001/0157 , G02F2203/11 , H01L21/02381 , H01L21/0245 , H01L21/02452 , H01L21/02532 , H01L21/02535 , H01L21/0262 , H01L31/028 , H01L31/035254 , H01L31/109 , Y02E10/547
摘要： Semiconductor structures having at least one quantum well heterostructure grown strain-free on Si(100) via a Sn1-xGex buffer layer and their uses are provided.
摘要翻译：提供了具有通过Sn1-xGex缓冲层在Si（100）上生长无应变的至少一个量子阱异质结的半导体结构及其用途。

3. 发明授权

US06911084B2 Low temperature epitaxial growth of quaternary wide bandgap semiconductors 失效
标题翻译：四元宽带隙半导体的低温外延生长
公开(公告)号：US06911084B2
公开(公告)日：2005-06-28
申请号：US09981024
申请日：2001-10-16
申请人： John Kouvetakis , Ignatius S. T. Tsong , Radek Roucka , John Tolle
发明人： John Kouvetakis , Ignatius S. T. Tsong , Radek Roucka , John Tolle
IPC分类号： C30B25/02 , H01L21/205 , H01L33/26 , H01S5/30 , H01S5/32 , C30B25/08
CPC分类号： H01L33/26 , C30B25/02 , C30B29/52 , H01L21/02378 , H01L21/02381 , H01L21/02447 , H01L21/02458 , H01L21/02529 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01S5/30 , H01S5/3027 , H01S5/32 , H01S2304/02
摘要： A method of growing quaternary epitaxial films having the formula YCZN wherein Y is a Group IV element and Z is a Group III element at temperatures in the range 550-750° C. is provided. In the method, a gaseous flux of precursor H3YCN and a vapor flux of Z atoms are introduced into a gas-source molecular beam epitaxial (GSMBE) chamber where they combine to form thin film of YCZN on the substrate. Preferred substrates are silicon, silicon carbide and AlN/silicon structures. Epitaxial thin film SiCAlN and GeCAlN are provided. Bandgap engineering may be achieved by the method by adjusting reaction parameters of the GSMBE process and the relative concentrations of the constituents of the quaternary alloy films. Semiconductor devices produced by the present method have bandgaps from about 2 eV to about 6 eV and exhibit a spectral range from visible to ultraviolet which makes them useful for a variety of optoelectronic and microelectronic applications. Large-area substrates for growth of conventional Group III nitrides and compounds are produced by SiCAlN deposited on large-diameter silicon wafers. The quaternary compounds, especially the boron containing compounds, exhibit extreme hardness. These quaternary compounds are radiation resistant and may be used in space exploration.
摘要翻译：提供了在550-750℃的温度下生长具有式YCZN的四元外延膜的方法，其中Y是IV族元素，Z是III族元素。在该方法中，将前体H 3 YCN的气体流量和Z原子的蒸气通量引入气体分子束外延（GSMBE）室中，在其中它们结合形成YCZN的薄膜，底物。优选的衬底是硅，碳化硅和AlN /硅结构。提供外延薄膜SiCA1N和GeCA1N。通过调整GSMBE工艺的反应参数和四元合金薄膜成分的相对浓度，可以通过该方法实现带隙工程。通过本方法制造的半导体器件具有约2eV至约6eV的带隙，并且具有从可见到紫外线的光谱范围，使得它们可用于各种光电子和微电子应用。用于生长常规III族氮化物和化合物的大面积衬底由沉积在大直径硅晶片上的SiCAlN产生。四元化合物，特别是含硼化合物，具有极高的硬度。这些四元化合物具有耐辐射性，可用于太空探索。

4. 发明授权

US07598513B2 SixSnyGe1-x-y and related alloy heterostructures based on Si, Ge and Sn 失效
标题翻译： SixSnyGe1-x-y和基于Si，Ge和Sn的相关合金异质结构
公开(公告)号：US07598513B2
公开(公告)日：2009-10-06
申请号：US10559979
申请日：2004-06-14
申请人： John Kouvetakis , Matthew Bauer , John Tolle
发明人： John Kouvetakis , Matthew Bauer , John Tolle
IPC分类号： H01L29/06 , H01L21/336
CPC分类号： H01L31/028 , H01L21/02381 , H01L21/0245 , H01L21/02452 , H01L21/02532 , H01L21/02535 , H01L21/0259 , H01L21/0262 , H01L29/161 , H01L29/165 , Y02E10/547 , Y10S148/169 , Y10S438/936
摘要： A novel method for synthesizing device-quality alloys and ordered phases in a Si—Ge—Sn system uses a UHV-CVD process and reactions of SnD4 with SiH3GeH3. Using the method, single-phase SixSnyGe1-x-y semiconductors (x≦0.25, y≦0.11) are grown on Si via Ge1-xSnx buffer layers The Ge1-xSnx buffer layers facilitate heteroepitaxial growth of the SixSnyGe1-x-y films and act as compliant templates that can conform structurally and absorb the differential strain imposed by the more rigid Si and Si—Ge—Sn materials. The SiH3GeH3 species was prepared using a new and high yield method that provided high purity semiconductor grade material.
摘要翻译：在Si-Ge-Sn系统中合成器件质量合金和有序相的新方法使用特高压CVD法和SnD4与SiH3GeH3的反应。使用该方法，通过Ge1-xSnx缓冲层在Si上生长单相SixSnyGe1-xy半导体（x <= 0.25，y <= 0.11）。Ge1-xSnx缓冲层促进SixSnyGe1-xy膜的异质外延生长，并作为可以在结构上符合并吸收由更刚性的Si和Si-Ge-Sn材料施加的微分应变。使用提供高纯度半导体级材料的新的高产率方法制备SiH 3 GeH 3物质。

5. 发明申请

US20080113186A1 Method for Growing Si-Ge Semiconductor Materials and Devices on Substrates 有权
标题翻译：在基板上生长Si-Ge半导体材料和器件的方法
公开(公告)号：US20080113186A1
公开(公告)日：2008-05-15
申请号：US11662669
申请日：2005-04-08
申请人： John Kouvetakis , Ignatius S.T. Tsong , Changwu Hu , John Tolle
发明人： John Kouvetakis , Ignatius S.T. Tsong , Changwu Hu , John Tolle
IPC分类号： H01L21/20 , C30B25/02 , B32B33/00 , C01B33/06
CPC分类号： B32B15/02 , B82Y10/00 , C30B23/002 , C30B23/02 , C30B25/02 , C30B29/52 , H01L21/02381 , H01L21/02532 , H01L21/02573 , H01L21/0262 , H01L21/02636 , Y10T428/265 , Y10T428/31663
摘要： A method is provided for growing Si—Ge materials on Si(100) with Ge-rich contents (Ge>50 at. %) and precise stoichiometries SiGe, SiGe2, SiGe3 and SiGe4. New hydrides with direct Si—Ge bonds derived from the family of compounds (H3Ge)xSiH4-x (x=1-4) are used to grow uniform, relayed and highly planar films with low defect densities at unprecedented low temperatures between about 300-450° C., circumventing entirely the need of thick compositionally graded buffer layer and lift off technologies. At about 500-700° C., SiGex quantum dots are grown with narrow size distribution, defect-free microstructures and highly homogeneous elemental content at the atomic level. The method provides precise control of morphology, composition, structure and strain via the incorporation of the entire Si/Ge framework of the gaseous precursor into the film. The grown materials possess the required morphological and microstructural characteristics for applications in high frequency electronic and optical systems, as well as templates and buffer layers for development of commercial devices based on high mobility Si and Ge channels.
摘要翻译：提供了一种用于在具有富锗含量（Ge> 50at。％）和精确化学计量的Si（100）上生长Si-Ge材料的方法，SiGe，SiGe 2 Si，SiGe 3， SUB＆gt;和SiGe 4。具有源自化合物族（H 3 3 Ge）的直接Si-Ge键的新型氢化物x Si x 4 x x（x = 1- 4）用于在约300-450℃之间的前所未有的低温下生长具有低缺陷密度的均匀的，中继的和高度平坦的膜，完全避免了厚的成分梯度缓冲层和剥离技术的需要。在约500-700℃下，以较小的分布，无缺陷的微结构和原子水平的高均匀元素含量生长SiGe x X量子点。该方法通过将气态前体的整个Si / Ge骨架结合到膜中来提供形态，组成，结构和应变的精确控制。生长的材料具有在高频电子和光学系统中的应用所需的形态和微结构特征，以及用于基于高迁移率Si和Ge通道开发商业设备的模板和缓冲层。

6. 发明授权

US08568681B2 Hydride compounds with silicon and germanium core atoms and method of synthesizing same 失效
标题翻译：具有硅和锗核心原子的氢化物化合物及其合成方法
公开(公告)号：US08568681B2
公开(公告)日：2013-10-29
申请号：US13180961
申请日：2011-07-12
申请人： John Kouvetakis , Cole J. Ritter , John Tolle
发明人： John Kouvetakis , Cole J. Ritter , John Tolle
IPC分类号： C01B33/00
CPC分类号： C01B33/04 , C01B6/06 , Y10S148/058
摘要： A method is provided for synthesizing silicon-germanium hydride compounds of the formula (H3Ge)4-xSiHx, wherein x=0, 1, 2 or 3. The method includes combining a silane triflate with a compound having a GeH3 ligand under conditions whereby the silicon-germanium hydride is formed. The compound having the GeH3 ligand is selected from the group consisting of KGeH3, NaGeH3 and MR3GeH3, wherein M is a Group IV element and R is an organic ligand. The silane triflate can be HxSi(OSO2CF3)4-x or HxSi(OSO2C4F9)4-x. The method can be used to synthesize trisilane, (H3Si)2SiH2, and the iso-tetrasilane analog, (H3Si)3SiH, by combining a silane triflate with a compound comprising a SiH3 ligand under conditions whereby the silicon hydride is formed. The silane triflate can include HxSi(OSO2CF3)4-x or HxSi(OSO2C4F9)4-x wherein x=1 or 2. A method for synthesizing (H3Ge)2SiH2 includes combining H3GeSiH2(OSO2CF3) with KGeH3 under conditions whereby (H3Ge)2SiH2 is formed.
摘要翻译：提供了一种用于合成式（H3Ge）4-xSiHx的硅 - 锗化合物的方法，其中x = 0,1,2或3.该方法包括将硅烷三氟甲磺酸酯与具有GeH 3配位体的化合物组合，形成硅 - 锗氢化物。具有GeH 3配体的化合物选自KGeH 3，NaGeH 3和MR 3 GeH 3，其中M是IV族元素，R是有机配体。三氟甲磺酸硅烷可以是H x Si（OSO 2 CF 3）4-x或H x Si（OSO 2 C 4 F 9）4-x。该方法可以通过在形成硅氢化氢的条件下将硅烷三氟甲磺酸酯与包含SiH 3配体的化合物组合来合成丙硅烷（H3Si）2 SiH 2和异四硅烷类似物（H3Si）3 SiH。三氟甲磺酸硅烷可以包括H x Si（OSO 2 CF 3）4-x或H x Si（OSO 2 C 4 F 9）4-x，其中x = 1或2.合成（H3Ge）2 SiH 2的方法包括将H3GeSiH 2（OSO 2 CF 3）与KGeH 3组合，形成了。

7. 发明授权

US07981392B2 Hydride compounds with silicon and germanium core atoms and method of synthesizing same 有权
标题翻译：具有硅和锗核心原子的氢化物化合物及其合成方法
公开(公告)号：US07981392B2
公开(公告)日：2011-07-19
申请号：US11662722
申请日：2004-12-31
申请人： John Kouvetakis , Cole J. Ritter, III , John Tolle
发明人： John Kouvetakis , Cole J. Ritter, III , John Tolle
IPC分类号： C01B33/00
CPC分类号： C01B33/04 , C01B6/06 , Y10S148/058
摘要： A method is provided for synthesizing silicon-germanium hydride compounds of the formula (H3Ge)4-XSiHX, wherein x=0, 1, 2 or 3. The method includes combining a silane triflate with a compound having a GeH3 ligand under conditions whereby the silicon-germanium hydride is formed. The compound having the GeH3 ligand is selected from the group consisting of KGeH3, NaGeH3 and MR3GeH3, wherein M is a Group IV element and R is an organic ligand. The silane triflate can be HXSi(OSO2CF3)4-x or HxSi(OSO2C4F9)4-x. The method can be used to synthesize trisilane, (H3Si)2SiH2, and the iso-tetrasilane analog, (H3Si)3SiH, by combining a silane triflate with a compound comprising a SiH3 ligand under conditions whereby the silicon hydride is formed. The silane triflate can include HXSi(OSO2CF3)4-x or HXSi(OSO2C4F9)4-x wherein x=1 or 2. A method for synthesizing (H3Ge)2SiH2 includes combining H3GeSiH2(OSO2CF3) with KGeH3 under conditions whereby (H3Ge)2SiH2 is formed.
摘要翻译：提供了一种用于合成式（H3Ge）4-XSiHX的硅锗化合物的方法，其中x = 0,1,2或3.该方法包括将硅烷三氟甲磺酸酯与具有GeH 3配体的化合物组合，形成硅 - 锗氢化物。具有GeH 3配体的化合物选自KGeH 3，NaGeH 3和MR 3 GeH 3，其中M是IV族元素，R是有机配体。三氟甲磺酸硅烷可以是HXSi（OSO 2 CF 3）4-x或H x Si（OSO 2 C 4 F 9）4-x。该方法可以通过在形成硅氢化氢的条件下将硅烷三氟甲磺酸酯与包含SiH 3配体的化合物组合来合成丙硅烷（H3Si）2 SiH 2和异四硅烷类似物（H3Si）3 SiH。三氟甲磺酸硅烷可以包括HXSi（OSO 2 CF 3）4-x或HXSi（OSO 2 C 4 F 9）4-x，其中x = 1或2.合成（H3Ge）2 SiH 2的方法包括在下列条件下组合H3GeSiH 2（OSO 2 CF 3）与KGeH 3：（H3Ge）2 Si 形成了。

8. 发明申请

US20080277647A1 Materials and Optical Devices Based on Group IV Quantum Wells Grown on Si-Ge-Sn Buffered Silicon 失效
标题翻译：基于Si-Ge-Sn缓冲硅上生长的IV族量子阱的材料和光学器件
公开(公告)号：US20080277647A1
公开(公告)日：2008-11-13
申请号：US11663024
申请日：2005-09-16
申请人： John Kouvetakis , Jose Menendez , John Tolle , Ling Liao , Dean Samara-Rubio
发明人： John Kouvetakis , Jose Menendez , John Tolle , Ling Liao , Dean Samara-Rubio
IPC分类号： H01L31/0264
CPC分类号： G02F1/017 , B82Y20/00 , G02F1/01708 , G02F2001/0157 , G02F2203/11 , H01L21/02381 , H01L21/0245 , H01L21/02452 , H01L21/02532 , H01L21/02535 , H01L21/0262 , H01L31/028 , H01L31/035254 , H01L31/109 , Y02E10/547
摘要： A semiconductor structure including a single quantum well Ge1−x1−ySix1Sn/Ge1−x2Six2 heterostructure grown strain-free on Si(100) via a Sn1−xGex buffer layer is shown.
摘要翻译：包括单量子阱的半导体结构Ge 1-x1-y Si 1 Sn 1 / x 1 x 2 Si x 2 x 2 示出了在Si（100）上通过Sn 1-x N Ge x S x缓冲层生长无应变的异质结构。

9. 发明授权

US08821635B2 Method for growing Si-Ge semiconductor materials and devices on substrates 有权
标题翻译：在衬底上生长Si-Ge半导体材料和器件的方法
公开(公告)号：US08821635B2
公开(公告)日：2014-09-02
申请号：US11662669
申请日：2005-04-08
申请人： John Kouvetakis , Ignatius S. T. Tsong , Changwu Hu , John Tolle
发明人： John Kouvetakis , Ignatius S. T. Tsong , Changwu Hu , John Tolle
IPC分类号： C30B25/02 , H01L21/02 , B82Y10/00 , C30B29/52 , B32B15/02 , C30B23/02
CPC分类号： B32B15/02 , B82Y10/00 , C30B23/002 , C30B23/02 , C30B25/02 , C30B29/52 , H01L21/02381 , H01L21/02532 , H01L21/02573 , H01L21/0262 , H01L21/02636 , Y10T428/265 , Y10T428/31663
摘要： Si—Ge materials are grown on Si(100) with Ge-rich contents (Ge>50 at. %) and precise stoichiometries SiGe, SiGe2, SiGe3 and SiGe4. New hydrides with direct Si—Ge bonds derived from the family of compounds (H3Ge)xSiH4-x (x=1-4) are used to grow uniform, relaxed, and highly planar films with low defect densities at unprecedented low temperatures between about 300-450° C. At about 500-700° C., SiGex quantum dots are grown with narrow size distribution, defect-free microstructures and highly homogeneous elemental content at the atomic level. The method provides for precise control of morphology, composition, structure and strain. The grown materials possess the required characteristics for high frequency electronic and optical applications, and for templates and buffer layers for high mobility Si and Ge channel devices.
摘要翻译： Si-Ge材料在具有富锗含量（Ge> 50at。％）和精确化学计量的SiGe，SiGe2，SiGe3和SiGe4的Si（100）上生长。使用衍生自化合物系列（H3Ge）xSiH4-x（x = 1-4）的直接Si-Ge键的新型氢化物在前所未有的低温下生长具有低缺陷密度的均匀，松弛和高平面的膜，约为300 在约500-700℃下，SiGex量子点以较小的分布，无缺陷的微结构和原子级的高均匀元素含量生长。该方法提供形态，组成，结构和应变的精确控制。生长的材料具有高频电子和光学应用所需的特性，以及用于高迁移率Si和Ge通道器件的模板和缓冲层。

10. 发明申请

US20090324475A1 Superhard dielectric compounds and methods of preparation 审中-公开
标题翻译：超硬电介质化合物及其制备方法
公开(公告)号：US20090324475A1
公开(公告)日：2009-12-31
申请号：US11968546
申请日：2008-01-02
申请人： John Kouvetakis , I.S.T. Tsong , Levi Torrison , John Tolle
发明人： John Kouvetakis , I.S.T. Tsong , Levi Torrison , John Tolle
IPC分类号： C01B35/10 , C01B33/26
CPC分类号： H01L21/02145 , C01B21/0826 , C04B35/5603 , C04B35/5805 , C04B35/597 , C04B2235/40 , C04B2235/402 , C04B2235/421 , C04B2235/422 , C04B2235/428 , C04B2235/44 , C04B2235/465 , C04B2235/483 , C04B2235/96 , C04B2235/9653 , C23C16/30 , C23C16/308 , C23C16/32 , C23C16/34 , C23C16/38 , H01L21/02115 , H01L21/02216 , H01L21/02269 , H01L21/02271 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28238 , H01L21/3145 , H01L29/518
摘要： Novel superhard dielectric compounds useful as gate dielectrics in microelectronic devices have been discovered. Low temperature methods for making thin films of the compounds on substrate silicon are provided. The methods comprise the step of contacting a precursor having the formula H3X—O—XH3, wherein X is silicon or carbon with a compound comprising boron or nitrogen In a chemical vapor deposition (CVD) chamber or with one or more atomic elements in a molecular beam epitaxial deposition (MBE) chamber. These thin film constructs are useful as components of microelectronic devices, and specifically as gate dielectrics in CMOS devices.
摘要翻译：已经发现了用作微电子器件中的栅极电介质的新型超硬电介质化合物。提供了在基板硅上制备化合物薄膜的低温方法。所述方法包括使具有式H3X-O-XH3的前体与其中X是硅或碳的化合物与包含硼或氮的化合物接触的步骤在化学气相沉积（CVD）室中或与分子中的一个或多个原子元素光束外延沉积（MBE）室。这些薄膜结构可用作微电子器件的组件，特别是CMOS器件中的栅极电介质。

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